JPS59112654A - Gallium arsenide semiconductor device - Google Patents

Gallium arsenide semiconductor device

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Publication number
JPS59112654A
JPS59112654A JP57222469A JP22246982A JPS59112654A JP S59112654 A JPS59112654 A JP S59112654A JP 57222469 A JP57222469 A JP 57222469A JP 22246982 A JP22246982 A JP 22246982A JP S59112654 A JPS59112654 A JP S59112654A
Authority
JP
Japan
Prior art keywords
film
gallium arsenide
semiconductor device
bonding
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57222469A
Other languages
Japanese (ja)
Inventor
Kazuhiko Inoue
和彦 井上
Takeshi Kuramoto
倉本　毅
Yoshihiro Kinoshita
木下　義弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57222469A priority Critical patent/JPS59112654A/en
Publication of JPS59112654A publication Critical patent/JPS59112654A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a GaAs semiconductor device which has excellent bondability and mass productivity by superposing a bonding pad electrode film on an ohmic contact electrode on a GaAs substrate with Ti or P becoming a barrier of Ga diffusion and having strong bondability with GaAs as a primary layer. CONSTITUTION:An SiO2 film 12 is accumulated on an N type GaAs substrate 11, and an AuGe film 14 and a Pt film 15 are laminated in a hole 13. Unnecessary films 14, 15 are removed together with resist 16 utilized for the opening, and the film 12 is removed with H4F solution. Then, an alloy layer 17 is formed between the film 14 and the substrate 11 at 430 deg.C in N2, and ohmically contacted. Again, an SiO2 film 18 is accumulated, a hole 19 is opened largely in the amount corresponding to the pad via the hole 13, a Ti barrier film 20 and an aluminum pad electrode film 21 are sequentially accumulated, a resist mask 22 is dissolved and removed, and unnecessary films 20, 21 are removed to complete a semiconductor device. According to this configuration, the bondability is improved, no influence is effected to the characteristics of the element, a high yield is provided even after assembling, and excellent mass productivity can be obtained.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は電界効果型トランジスタ、ホール素手等に用
いられる砒化ガリウム半導体装置に係り、特にその電極
構造を改良した砒化ガリウム半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a gallium arsenide semiconductor device used in field effect transistors, Hall bare hands, etc., and particularly to a gallium arsenide semiconductor device with an improved electrode structure.

〔７発明の技術的背景〕 従来、第１図（ａ）に示すようなＮ型砒化ガリウム（Ｇ
ａＡｓ　）基板１上に良好で均一なオーム性接触の電極
を形成するには、ＡｕＧｅ膜２を熱処理によって砒化−
ｊｆ　’Ｊウムと合金化する方法が広く使われている。[7 Technical Background of the Invention] Conventionally, N-type gallium arsenide (G
aAs) To form an electrode with good and uniform ohmic contact on the substrate 1, the AuGe film 2 is arsenized by heat treatment.
A method of alloying with jf 'Jium is widely used.

そして、ボンディング・々ノド電極膜３としての最」二
層の金属をＡｕ又はＡｔとしている。ところで、電極を
形成した場合、砒化ガリウムを構成するガリウム（Ｇａ
）の電極膜への拡散、所謂１ガリウムの浮き出し′が起
って、電極表面に薄いガリウム酸化膜（ＧａＯ）層がで
きてしまい、ボンティングワイヤの接着性が著しく阻害
される。このだめ、ボンディング・やノド電極膜３の下
はガリウム拡散の障壁となる金属、例えばＴｉ、　Ｐｔ
、　Ｍｏ又はＴａ等の障壁金属膜４を形成するのが一般
的である。第１図（ｂ）はボンディング後の構造を示す
もので、５はボンティングワイヤ、６は合金層である。The two-most metal layer of the bonding/edge electrode film 3 is made of Au or At. By the way, when forming an electrode, gallium (Ga
) diffusion into the electrode film, so-called 1 gallium extrusion', occurs, resulting in the formation of a thin gallium oxide (GaO) layer on the electrode surface, which significantly impedes the adhesion of the bonding wire. However, under the bonding/node electrode film 3, there is a metal that acts as a barrier to gallium diffusion, such as Ti or Pt.
, Mo, Ta, or the like is generally formed. FIG. 1(b) shows the structure after bonding, where 5 is a bonding wire and 6 is an alloy layer.

この構造の問題点は、ボンディングパノド電極膜３迄形
成し、しかる後合金化のだめの熱処理を行うことにある
。すなわち、熱処理は４００℃以上の高温で数分行うた
め、この時にガリウムの一部が障壁金属膜４を抜けてポ
ンディングパッド電極膜３へ拡散してし１い、障壁金統
膜４が本来の役割を十分果さない。このため組立後はオ
ープン不良か多く、歩留が低下し量産性に欠ける。The problem with this structure is that up to the bonding panode electrode film 3 is formed and then heat treatment is performed for alloying. That is, since the heat treatment is performed at a high temperature of 400° C. or higher for several minutes, some of the gallium at this time passes through the barrier metal film 4 and diffuses into the bonding pad electrode film 3. does not fully fulfill its role. For this reason, there are many open defects after assembly, resulting in lower yields and a lack of mass productivity.

このことを解決する手段として、次の方法がある。すな
わち、第２図に示すように、ＡｕＧｅ膜２を形成した後
、合金化のだめの熱処理を行い、しかる後障壁金属膜４
とポンディングパッド電極膜３を形成する。すなわち、
ガリウムの障壁金属膜４を抜ける要因となる熱処理工程
をポンディングパッド電極膜３の形成前に行うものであ
る。ここで、ＡｕＧｅ膜２のみで熱処理を行うと、膜中
のゲルマニウム（Ｇｅ）の酸化あるいは膜のボール化、
所甜″ボールアソゾが起り、特性上好しく無い。このた
め、第３′図（ａ）に示すようにＡｕＧｅ膜２上に例え
ばｐｔ険７を形成し、Ｐｔ／ＡｕＧｅの構造で熱処理を
行うのが一般的である。第３図（ｂ）は最終的な構造を
示す。The following method can be used to solve this problem. That is, as shown in FIG. 2, after forming the AuGe film 2, heat treatment is performed to prevent alloying, and then the barrier metal film 4 is formed.
Then, a bonding pad electrode film 3 is formed. That is,
A heat treatment step that causes gallium to pass through the barrier metal film 4 is performed before the formation of the bonding pad electrode film 3. Here, if heat treatment is performed only on the AuGe film 2, germanium (Ge) in the film may be oxidized or the film may become a ball.
As a result, "ball association" occurs, which is not desirable in terms of characteristics.For this reason, as shown in FIG. is common. Figure 3(b) shows the final structure.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、この構造においても、合金化のだめの熱
処理を施しているＡｕＧｅ膜２及びｐｔ膜７上に障壁金
属膜４及びポンディングパッド電極膜３を積層している
ため、次のような欠点がある。すなわち、合金化のだめ
の熱処理後は、ｐｔ膜７の表面には砒化ガリウム基板１
から拡散したガリウムやＡｕＧｅ膜２中のゲルマニウム
が析出する。これらは空気中で酸化されやすいため、薄
いガリウム及びゲルマニウムの酸化層（Ｇａｐ。However, even in this structure, since the barrier metal film 4 and the bonding pad electrode film 3 are laminated on the AuGe film 2 and the PT film 7, which have been subjected to heat treatment to prevent alloying, there are the following drawbacks. . That is, after the heat treatment for alloying, the gallium arsenide substrate 1 is formed on the surface of the PT film 7.
Gallium diffused from the AuGe film 2 and germanium in the AuGe film 2 are precipitated. Since these are easily oxidized in air, a thin gallium and germanium oxide layer (Gap) is used.

ＧｅＯ）ができている。この上に障壁金属膜４及びポン
ディングパッド電極膜３を積層した場合、ｐｔ膜７と障
壁金属膜４との密着力は弱く、ボンディング時の機械的
衝撃で障壁金属膜４がｐｔ膜７から剥離し易い。このた
め、ボンディング時の作業性が低下し、又、組立後のオ
ープン不良も多くやはり量産性に欠ける。GeO) is formed. When the barrier metal film 4 and the bonding pad electrode film 3 are laminated on this, the adhesion between the PT film 7 and the barrier metal film 4 is weak, and the mechanical impact during bonding causes the barrier metal film 4 to separate from the PT film 7. Easy to peel off. For this reason, workability during bonding is reduced, and there are also many open defects after assembly, which also lacks mass productivity.

尚、以上の説明はＮ型砒化ガリウム基板１上においてな
されたが、Ｐ型砒化ガリウム基板上であっても合金化の
熱処理化工程を伴っており、Ｎ型の場合と同様の問題が
存在する。The above explanation was made on the N-type gallium arsenide substrate 1, but even on the P-type gallium arsenide substrate, a heat treatment process for alloying is involved, and the same problems as in the case of the N-type exist. .

〔発明の目的〕[Purpose of the invention]

この発明は上記実情に鑑みてなされたもので、その目的
は、ボンディングの接着性が良好で、かつ電極膜の密着
力が強固であり、ポンディ。This invention was made in view of the above-mentioned circumstances, and its purpose is to provide good bonding adhesiveness, strong adhesion of the electrode film, and bonding.

グ時の機械的衝撃があっても膜が剥離するようなことの
無いボンディング性に優れた電極構造を有する砒化ガ゛
リウム半導体装置を提供することにある。An object of the present invention is to provide a gallium arsenide semiconductor device having an electrode structure with excellent bonding properties, which prevents the film from peeling off even when subjected to mechanical impact during bonding.

〔発明の概要〕[Summary of the invention]

す、なわち、この発明は、砒化ガリウム基板上の合金化
の熱処理工程を経て形成しだオーム性−接触電極に、ガ
リウム拡散の障壁となシ、がっ砒化ガリウムとの密着力
が強い金属、例えばＴｉあるいはｐｔからなる障壁金属
膜を下地とし、その上にポンディングパッド電枠膜を積
層する。That is, this invention provides an ohmic contact electrode formed through an alloying heat treatment process on a gallium arsenide substrate using a metal that acts as a barrier to gallium diffusion and has strong adhesion to gallium arsenide. For example, a barrier metal film made of Ti or PT is used as a base, and a bonding pad electric frame film is laminated thereon.

この際、少くともボンディングされる部分を障壁金属膜
が直接砒化ガリウム基板に密着する構造とするものであ
る。At this time, the structure is such that the barrier metal film directly adheres to the gallium arsenide substrate at least in the bonded portion.

〔発明の実施例〕[Embodiments of the invention]

以下、図面に参照してこの発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

この実施例においては、Ｎ型砒化ガリウム基板を用いた
例で説明する。先ず、第４図（ａ）に示すように、Ｎ型
砒化ガリウム基板１１にＳｉＨ４の熱分解法によシＳｉ
Ｏ□膜１２を２０００に堆積する。次に、通常のフォト
エツチング技術によりＳ　ｉＯ２膜１２をエツチングし
てＰｔ／ＡｕＧｅ膜コンタクト用の開口１３を形成する
。次いで真空蒸着法によりＡｕＧｅ膜１４、Ｐｔ膜１５
の順に各各２０００Ｘ、３００Ｘづつ堆積する。次に、
第４図（ｂ）に示すように上記フォトエツチングの際に
用いたフォトレジスト膜１６をアセトン等の有機溶剤に
溶かすことにより、フォトレジスト膜１６上の不要なＡ
ｕＧ　ｅ膜１４及びｐｔ膜１５を除去する。さらに、Ｎ
′Ｈ４Ｆ液によりＳｉＯ２膜１２も除く。しかる後、温
度４３０℃の窒素（Ｎ２）雰囲気において約５分の熱処
理を行い、ＡｕＧｅ膜１４膚 と砒化ガリウム基板１ノとの間に合金躊１７を形成し、
オーム性接触金とる。次に、第４図（ｃ）に示すように
、再び５ＩＨ４の熱分解法により、Ｓ　ｉＯ２膜１８を
１３０００Ｘ堆積し、コノ５ｌｏ２膜１８を通常のフォ
トエツチング技術によりエツチングしてボンディング・
ぐッド電極コンタクト用の開口１９を形成する。この間
［」１９は上記開口１３より後述のビンディングパッド
電極部分だけ広く形成されている。次いで、真空蒸着法
により例えばＴｉからなる障壁金属膜２ｏ及び例えばｌ
ｔからなるボンディング・ぐッド電極膜２）（７）　Ｉ
ＩＦｊ　Ｋ、Ｇ々２０００Ｘ　、１００００Ｘづ−）堆
ｆＮする。In this embodiment, an example using an N-type gallium arsenide substrate will be explained. First, as shown in FIG. 4(a), Si is deposited on an N-type gallium arsenide substrate 11 by the thermal decomposition method of SiH4.
An O□ film 12 is deposited at 2000 nm. Next, the SiO2 film 12 is etched using a normal photoetching technique to form an opening 13 for contacting the Pt/AuGe film. Next, an AuGe film 14 and a Pt film 15 are formed by vacuum evaporation.
2000X and 300X are deposited in this order. next,
As shown in FIG. 4(b), unnecessary A on the photoresist film 16 is removed by dissolving the photoresist film 16 used in the photoetching process in an organic solvent such as acetone.
The uGe film 14 and PT film 15 are removed. Furthermore, N
'The SiO2 film 12 is also removed using H4F solution. Thereafter, heat treatment was performed for about 5 minutes in a nitrogen (N2) atmosphere at a temperature of 430° C. to form an alloy layer 17 between the AuGe film 14 and the gallium arsenide substrate 1.
Use ohmic contact metal. Next, as shown in FIG. 4(c), a SiO2 film 18 is deposited at 13,000× again by the 5IH4 thermal decomposition method, and the 5LO2 film 18 is etched by a normal photoetching technique to form a bonding layer.
An opening 19 for a good electrode contact is formed. The gap 19 is formed wider than the opening 13 by a portion of a binding pad electrode, which will be described later. Next, a barrier metal film 2o made of, for example, Ti and a barrier metal film 2o, for example, of
Bonding/good electrode film 2) (7) I
IFj K, G2000X, 10000X)

次に、フォトレジスト膜２２をアセトン等の有機溶剤に
溶かずことにより、フォトレノスト膜２２上の不要な障
壁金属膜２ｏ及びポンディングパッド電極膜２１を除去
する。第４図（ｄ）はその時点の構造を示すものである
。この構造において、ビンディングは障壁金属膜２ｏが
砒化ガリウム基板１１に密着した領域（Ａで示す領域）
上のポンディングパッド電極膜２ノに行うものである。Next, by not dissolving the photoresist film 22 in an organic solvent such as acetone, unnecessary barrier metal film 2o and bonding pad electrode film 21 on the photoresist film 22 are removed. FIG. 4(d) shows the structure at that point. In this structure, the binding is a region where the barrier metal film 2o is in close contact with the gallium arsenide substrate 11 (region indicated by A).
This is applied to the upper bonding pad electrode film 2.

上記電極構造を有する砒化ガリウム半導体装置にあって
は、デンディング部が、ポンディングパッド電極膜２１
／障壁金属膜２０／砒化ガリウム基板１１の構造となっ
ているため、オーム性接触は無く、ボンディング時の衝
撃で金属膜間の剥離は起きない。又、障壁金属膜２０は
、砒化ガリウム基板１１と密着力の強固な金属（Ｔｉ）
によυ形成されているため、障壁金属膜２０と砒化ガリ
ウム基板１１間の剥離は起きない。In the gallium arsenide semiconductor device having the above-mentioned electrode structure, the denting portion is formed on the bonding pad electrode film 21.
Since the structure is /barrier metal film 20/gallium arsenide substrate 11, there is no ohmic contact and separation between metal films does not occur due to impact during bonding. The barrier metal film 20 is made of a metal (Ti) that has strong adhesion to the gallium arsenide substrate 11.
Therefore, separation between the barrier metal film 20 and the gallium arsenide substrate 11 does not occur.

さらに、ポンプイングツ２ツド電極膜２１の形成後は、
合金化のための熱処理のような長時間の高温にさらされ
る工程も無いので、障壁金属膜２０はその効果を十分発
揮し、ボンディングワイヤの接着性が悪くなることもな
い。なお、オーム性接触電極（Ａｕ膜１５　／　ＡｕＧ
ｅ膜１４膜長４ポンディングパッド電極膜２１の障壁金
属膜２０とのそれぞれの界面には、薄いガリウム酸化膜
及びゲルマニウム酸化膜が存在するが、素子特性上及び
信頼性上なんの影響も受けず、問題はない。Furthermore, after forming the pumping double electrode film 21,
Since there is no step such as heat treatment for alloying that involves exposure to high temperatures for a long period of time, the barrier metal film 20 fully exhibits its effect, and the adhesion of the bonding wire does not deteriorate. In addition, ohmic contact electrode (Au film 15 / AuG
A thin gallium oxide film and a thin germanium oxide film exist at each interface between the e-film 14 film length 4 and the barrier metal film 20 of the bonding pad electrode film 21, but this does not affect the device characteristics or reliability. There's no problem.

尚、上記実施例においては、オーム性接触電極としてｐ
ｔ膜１５／ＡｕＧｅ膜１４、障壁金属膜２゜としてＴＩ
、ポンディングパッド電極膜２ノとしてＡｔをそれぞれ
用いて説明しだが、これらに限定するものではなく、オ
ーム性接触電極としてＮｉ　／　ＡｕＧｅ　、　Ａｕ　
／　ＡｕＧｅ等、障壁金属膜２ｏとしてＭｏ、　Ｔａ、
　Ｐｔ等、ポンディングパッド電極膜２１としてＡｕ等
を用いてもよい。また、上記実施例においては、Ｎ型砒
化ガリウム基板を用いて説明したが、Ｐ型砒化ガリウム
基板としてもよいことは勿論である。In the above embodiment, p is used as the ohmic contact electrode.
TI film 15/AuGe film 14, barrier metal film 2°
, At is used as the bonding pad electrode film 2, but the invention is not limited to these, and Ni/AuGe, Au can be used as the ohmic contact electrode.
/ AuGe, etc., as the barrier metal film 2o, Mo, Ta,
Pt or the like, Au or the like may be used as the bonding pad electrode film 21. Furthermore, although the above embodiments have been described using an N-type gallium arsenide substrate, it goes without saying that a P-type gallium arsenide substrate may also be used.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、ボンディング性が良好
であるだめ、組立後でも高歩留りであり、量産性に優れ
た砒化ガリウム半導体装置を提供できる。As described above, according to the present invention, it is possible to provide a gallium arsenide semiconductor device that has good bonding properties, has a high yield even after assembly, and is excellent in mass production.

【図面の簡単な説明】[Brief explanation of drawings]

第１図乃至第３図はそれぞれ従来の砒化ガリウム半導体
装置の電極構造を示す断面図、第４図はこの発明の一実
施例に係る砒化ガリウム半導体装置の電極構造を示す断
面図である。 １ノ・・・Ｎ型砒化ガリウム基板、１２・・・５ＩＯ２
膜、ＳｉＯ□膜、１９・・・開口、２０・・・障壁金属
膜、２１・・・ビンディングパッド電極膜、２２・・・
フォトレジスト膜。 出願人代理人　弁理士　鈴　江　武　彦牙１図 〉・３図 号　４０1 to 3 are cross-sectional views showing the electrode structure of a conventional gallium arsenide semiconductor device, and FIG. 4 is a cross-sectional view showing the electrode structure of a gallium arsenide semiconductor device according to an embodiment of the present invention. 1...N-type gallium arsenide substrate, 12...5IO2
film, SiO□ film, 19... opening, 20... barrier metal film, 21... binding pad electrode film, 22...
Photoresist film. Applicant's agent Patent attorney Takeshi Suzue Hikoga Figures 1 and 3 No. 40

Claims (1)

【特許請求の範囲】[Claims] 砒化ガリウム基板と、この砒化ガリウ・ム基板上に形成
されだオーム性接触電極層と、前記砒化ガリウム基板と
強固に密着し、かつガリウム拡散の障壁となる金属によ
り形成され、前記オーム性接触電極層及び前記砒化ガリ
ウム基板上に形成された障壁金属膜と、この障壁金属膜
上に形成されたボンディング・フッド電極膜とを具備し
、前記障壁金属膜が前記砒化ガリウム基板に密着した領
域上のボンディング・Ｆノド電極膜に対しボンディング
を行うことを特徴とする砒化ガリウム半導体装置。a gallium arsenide substrate; an ohmic contact electrode layer formed on the gallium arsenide substrate; and an ohmic contact electrode layer formed of a metal that firmly adheres to the gallium arsenide substrate and acts as a barrier to gallium diffusion. a barrier metal film formed on the gallium arsenide substrate; and a bonding hood electrode film formed on the barrier metal film; Bonding: A gallium arsenide semiconductor device characterized by bonding to an F-node electrode film.
JP57222469A 1982-12-18 1982-12-18 Gallium arsenide semiconductor device Pending JPS59112654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57222469A JPS59112654A (en) 1982-12-18 1982-12-18 Gallium arsenide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57222469A JPS59112654A (en) 1982-12-18 1982-12-18 Gallium arsenide semiconductor device

Publications (1)

Publication Number Publication Date
JPS59112654A true JPS59112654A (en) 1984-06-29

Family

ID=16782898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57222469A Pending JPS59112654A (en) 1982-12-18 1982-12-18 Gallium arsenide semiconductor device

Country Status (1)

Country Link
JP (1) JPS59112654A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170945A (en) * 1984-02-15 1985-09-04 Mitsubishi Electric Corp Semiconductor device
JPH01186671A (en) * 1988-01-14 1989-07-26 Toshiba Corp Compound semiconductor device
JPH03219674A (en) * 1990-01-25 1991-09-27 Toshiba Corp Electrode structure and manufacturing method of semiconductor device
JP2007317913A (en) * 2006-05-26 2007-12-06 Matsushita Electric Ind Co Ltd Semiconductor light emitting element, and its manufacturing method
WO2012064636A3 (en) * 2010-11-10 2012-08-09 Cree, Inc. Contact pad and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170945A (en) * 1984-02-15 1985-09-04 Mitsubishi Electric Corp Semiconductor device
JPH01186671A (en) * 1988-01-14 1989-07-26 Toshiba Corp Compound semiconductor device
JPH03219674A (en) * 1990-01-25 1991-09-27 Toshiba Corp Electrode structure and manufacturing method of semiconductor device
JP2007317913A (en) * 2006-05-26 2007-12-06 Matsushita Electric Ind Co Ltd Semiconductor light emitting element, and its manufacturing method
WO2012064636A3 (en) * 2010-11-10 2012-08-09 Cree, Inc. Contact pad and method of manufacturing the same
US9607955B2 (en) 2010-11-10 2017-03-28 Cree, Inc. Contact pad

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