JPS59110186A - 半導体レ−ザの製法 - Google Patents

半導体レ−ザの製法

Info

Publication number
JPS59110186A
JPS59110186A JP57219542A JP21954282A JPS59110186A JP S59110186 A JPS59110186 A JP S59110186A JP 57219542 A JP57219542 A JP 57219542A JP 21954282 A JP21954282 A JP 21954282A JP S59110186 A JPS59110186 A JP S59110186A
Authority
JP
Japan
Prior art keywords
layer
growth
type
semiconductor laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57219542A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0437597B2 (enExample
Inventor
Osamu Matsuda
修 松田
Hiromichi Sato
佐藤　浩通
Yoshifumi Mori
森　芳文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP57219542A priority Critical patent/JPS59110186A/ja
Publication of JPS59110186A publication Critical patent/JPS59110186A/ja
Publication of JPH0437597B2 publication Critical patent/JPH0437597B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57219542A 1982-12-15 1982-12-15 半導体レ−ザの製法 Granted JPS59110186A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57219542A JPS59110186A (ja) 1982-12-15 1982-12-15 半導体レ−ザの製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57219542A JPS59110186A (ja) 1982-12-15 1982-12-15 半導体レ−ザの製法

Publications (2)

Publication Number Publication Date
JPS59110186A true JPS59110186A (ja) 1984-06-26
JPH0437597B2 JPH0437597B2 (enExample) 1992-06-19

Family

ID=16737121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57219542A Granted JPS59110186A (ja) 1982-12-15 1982-12-15 半導体レ−ザの製法

Country Status (1)

Country Link
JP (1) JPS59110186A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037776A (en) * 1989-03-10 1991-08-06 International Business Machines Corporation Method for the epitaxial growth of a semiconductor structure
US5084410A (en) * 1987-10-15 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices
US5350702A (en) * 1992-03-28 1994-09-27 Samsung Electronics Co., Ltd. Method for fabricating a dual-gate metal-semiconductor field effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF QUANTUM ELECTRONICS=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084410A (en) * 1987-10-15 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices
US5037776A (en) * 1989-03-10 1991-08-06 International Business Machines Corporation Method for the epitaxial growth of a semiconductor structure
US5350702A (en) * 1992-03-28 1994-09-27 Samsung Electronics Co., Ltd. Method for fabricating a dual-gate metal-semiconductor field effect transistor

Also Published As

Publication number Publication date
JPH0437597B2 (enExample) 1992-06-19

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