JPS59106164A - Substrate for photovoltaic element - Google Patents
Substrate for photovoltaic elementInfo
- Publication number
- JPS59106164A JPS59106164A JP57217219A JP21721982A JPS59106164A JP S59106164 A JPS59106164 A JP S59106164A JP 57217219 A JP57217219 A JP 57217219A JP 21721982 A JP21721982 A JP 21721982A JP S59106164 A JPS59106164 A JP S59106164A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ito
- sno2
- amorphous
- crystalized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000000007 visual effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光起電力素子、特に非品質シリコンを用いた
光起電力素子に用いる基板に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a substrate for use in photovoltaic devices, particularly photovoltaic devices using non-quality silicon.
従来例のＩ’ｉ／７成とその問題点
従来、非品質シリコン（以下、ａ − Ｓｉ で表す
）を用いた光起電力素子用基板は、光電変換効率の大き
な素子を得るためには、多結晶のＩＴＯ（イ／ンウムテ
ィンオキサイ１・；イノジウムとススの混合１雪化物）
を、ガラス等に蒸着したものをＪｌ−１いていた。しか
し、Ｉ’ｒＯを多結晶の状態で蒸７１”ｉしたり、非晶
質で蒸着後、結晶化させるのは工程か多くかかり、基板
が高価になっていｆこ。安価に基板を作ノ＆しようとす
ると、ＩＴＯ（ｌ−ｉ非晶ｎ１たは微結晶の状態となる
。この上うな■ｆ○では光′ｉ４ｉ；笈懐シカ牛が低く
、実用化が失１（シい。Conventional I'i/7 structure and its problems Conventionally, photovoltaic device substrates using non-quality silicon (hereinafter referred to as a-Si) require the following steps in order to obtain devices with high photoelectric conversion efficiency: Polycrystalline ITO (inodium/inodium oxide 1; mixture of inodium and soot 1 snow)
Jl-1 was produced by vapor-depositing it on glass or the like. However, vaporizing I'rO in a polycrystalline state or crystallizing it after vapor deposition in an amorphous state takes many steps, making the substrate expensive. If you try to use ITO, it will be in an amorphous or microcrystalline state.In addition, in the case of una■f○, the light is low, and practical application will be lost.
発明の１．１的
不発明は、上記問題点を軽減し、高効率な光起１１Ｌ力
素子を与える安価な基板を提供することを目１丁づとす
る。The object of the invention is to provide an inexpensive substrate that alleviates the above-mentioned problems and provides a highly efficient photovoltaic 11L device.
発明の１ノ″４成
本発明ｄ、、透明絶縁性基板、１タリえはカラス板４ト
の上に非品質または微結晶化されたＩ’ｒＯを蒸着し、
さらにその上に非品質または微結晶化されたＳｎＯ２
を蒸着したことを特徴とする。No. 1 of the Invention (4) The present invention (d) is a transparent insulating substrate, in which non-quality or microcrystalline I'rO is vapor-deposited on a glass plate;
Furthermore, non-quality or microcrystalline SnO2
It is characterized by being vapor-deposited.
実施例の説明
図において、１は例えはガラス板からなる透明絶縁基板
で、その上に非品質またｄ、微結晶化されたＩ ＴＯ２
を約１０００人の厚さに蒸着する。ＩＴＯの蒸着は、ス
パッタリンク装置を用い、基板の加熱は行わない。次に
同一スパッタリンク装置内でＳ ｎ Ｏ２３を約２００
への厚さに蒸着する。In the explanatory diagram of the embodiment, 1 is a transparent insulating substrate made of, for example, a glass plate, on which non-quality or microcrystallized ITO2 is deposited.
is deposited to a thickness of about 1,000 layers. ITO is vapor-deposited using a sputter link device, and the substrate is not heated. Next, approximately 200% of S n O23 was added in the same sputter link equipment.
Deposited to a thickness of .
蒸着後１．隋品性を、Ｊ＾１べるためにＸ線回折像をと
ったが、その半値幅から結晶粒は直径が約１５０Å以下
かまたは、全くの非晶質状態であった。非晶質から微結
晶への変化は、ＩＴＯおよびｂ ｎ Ｏ２の蒸祐刺牛に
よって変わる。微結晶化されているＩＴＯは、ＳＥＭの
暗視野像のグレインサイズを測定しても７１奮ａ忍され
た。After vapor deposition 1. An X-ray diffraction image was taken to check the quality of the product, and the half width of the image showed that the crystal grains had a diameter of about 150 Å or less or were completely amorphous. The transformation from amorphous to microcrystalline is changed by steaming ITO and b n O2. Microcrystallized ITO had a grain size of 71 when measured in a dark-field SEM image.
以上のような構成をもつ基板を用いてａ −Ｓ ｉの光
起電力素子を作成し、光電変侯効率を比較した。ａ −
Ｓ ｉ光起電力素子は、基板の上に順にｐ型、ｌ型、ｎ
型のａ −Ｓ ｉ膜を堆積させるｐｉｎタイプである。An a-Si photovoltaic device was created using a substrate having the above configuration, and the photoelectric conversion efficiency was compared. a-
The Si photovoltaic element has p-type, l-type, and n-type cells on the substrate in this order.
This is a pin type film that deposits a type a-Si film.
Ｆの表に素子特性の比較を行なう。Table F shows a comparison of device characteristics.
（以下余 白）
この表には、多結晶ＩＴＯの特性も比較のために記した
。この表かられかるように、非晶質ＩＴＯのみでは、効
率は低いが、Ｓ ｎ Ｏ２を蒸着することにより、多結
晶ＩＴ○よりも大きな効率が得られ、多結晶のＩ’ｒＯ
とＳ ｎ Ｏ２を組み合わせたものとほぼ同し特性にな
ることがわかる。(Left below) In this table, the characteristics of polycrystalline ITO are also listed for comparison. As can be seen from this table, efficiency is low with amorphous ITO alone, but by vapor-depositing SnO2, greater efficiency than polycrystalline IT○ can be obtained, and polycrystalline I'rO
It can be seen that the characteristics are almost the same as those obtained by combining S n O2 and S n O2.
Ｓ ｎ Ｏ２は、１００人程鹿の厚さに蒸着するだけで
も効果があるが、１０００八を越えるほど厚くすると、
再び効率は減少する傾向を示した。SnO2 is effective even if it is deposited to a thickness of about 100 people, but if it is thicker than 1000cm,
Again the efficiency showed a decreasing trend.
なお、光起電力素子のみについて述べたかａ −８ｉを
用いた素子において、キャリアの伝導効率が良くなった
ために効率が上がったことを考えると、本発明は他のａ
−Ｓ ｉ素子用基板としても有用であるのは明白であ
る。In addition, considering that the efficiency has increased due to the improved carrier conduction efficiency in the device using a-8i, which has been described only with respect to the photovoltaic device, the present invention can be applied to other a-8i devices.
It is obvious that it is also useful as a substrate for -Si devices.
発明の効果
以上のように、本発明によれは、高効率の光起電力素子
を与える基板を得ることができる。Effects of the Invention As described above, according to the present invention, a substrate that provides a highly efficient photovoltaic device can be obtained.
図面は本発明の光起電力素子用基板の断面図を示す。 The drawing shows a cross-sectional view of a substrate for a photovoltaic device according to the present invention.
Claims (3)
に非品質または微結晶化されたＳ ｎ Ｏ ２ を蒸
着したことを特徴とする光起電力素子用基板。(1) A substrate for a photovoltaic device, characterized in that non-quality or microcrystalline SnO 2 is deposited on amorphous or microcrystalline ITO on the substrate.
か、１５０八以下である特許請求の範ｌＪｆＪ第１項記
載の光起電力素子用基板。(2) The substrate for a photovoltaic device according to claim 1, wherein the crystal grain size of microcrystallized ITO and SnO2 is 1,508 or less.
許請求範囲第１項記載の光起電力素子用基板。(3) The substrate for a photovoltaic device according to claim 1, wherein the substrate is an insulator transparent to =J visual rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217219A JPS59106164A (en) | 1982-12-10 | 1982-12-10 | Substrate for photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217219A JPS59106164A (en) | 1982-12-10 | 1982-12-10 | Substrate for photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59106164A true JPS59106164A (en) | 1984-06-19 |
Family
ID=16700718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57217219A Pending JPS59106164A (en) | 1982-12-10 | 1982-12-10 | Substrate for photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59106164A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1160877A2 (en) * | 2000-05-30 | 2001-12-05 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
-
1982
- 1982-12-10 JP JP57217219A patent/JPS59106164A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1160877A2 (en) * | 2000-05-30 | 2001-12-05 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
| EP1160877A3 (en) * | 2000-05-30 | 2006-05-24 | Sanyo Electric Co., Ltd. | Photovoltaic element and method of manufacturing the same |
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