JPS59103393A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS59103393A
JPS59103393A JP57212769A JP21276982A JPS59103393A JP S59103393 A JPS59103393 A JP S59103393A JP 57212769 A JP57212769 A JP 57212769A JP 21276982 A JP21276982 A JP 21276982A JP S59103393 A JPS59103393 A JP S59103393A
Authority
JP
Japan
Prior art keywords
layer
type
groove
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57212769A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260838B2 (enrdf_load_stackoverflow
Inventor
Junichi Kinoshita
順一 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57212769A priority Critical patent/JPS59103393A/ja
Publication of JPS59103393A publication Critical patent/JPS59103393A/ja
Publication of JPS6260838B2 publication Critical patent/JPS6260838B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57212769A 1982-12-06 1982-12-06 半導体レ−ザの製造方法 Granted JPS59103393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57212769A JPS59103393A (ja) 1982-12-06 1982-12-06 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57212769A JPS59103393A (ja) 1982-12-06 1982-12-06 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS59103393A true JPS59103393A (ja) 1984-06-14
JPS6260838B2 JPS6260838B2 (enrdf_load_stackoverflow) 1987-12-18

Family

ID=16628089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57212769A Granted JPS59103393A (ja) 1982-12-06 1982-12-06 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS59103393A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US5079185A (en) * 1989-04-06 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser
US5292685A (en) * 1991-07-24 1994-03-08 Sharp Kabushiki Kaisha Method for producing a distributed feedback semiconductor laser device
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US5656539A (en) * 1994-07-25 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a semiconductor laser
JP2003021348A (ja) * 2001-07-03 2003-01-24 Sasso Kogyo Kk 熱交換パイプ及び暖房装置
GB2581251A (en) * 2018-12-12 2020-08-12 Oz Optics Ltd A broadband THz receiver using thick patterned semiconductor crystals

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US5079185A (en) * 1989-04-06 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser
US5292685A (en) * 1991-07-24 1994-03-08 Sharp Kabushiki Kaisha Method for producing a distributed feedback semiconductor laser device
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US5656539A (en) * 1994-07-25 1997-08-12 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a semiconductor laser
JP2003021348A (ja) * 2001-07-03 2003-01-24 Sasso Kogyo Kk 熱交換パイプ及び暖房装置
GB2581251A (en) * 2018-12-12 2020-08-12 Oz Optics Ltd A broadband THz receiver using thick patterned semiconductor crystals

Also Published As

Publication number Publication date
JPS6260838B2 (enrdf_load_stackoverflow) 1987-12-18

Similar Documents

Publication Publication Date Title
JPS6124838B2 (enrdf_load_stackoverflow)
JPS59103393A (ja) 半導体レ−ザの製造方法
US6084901A (en) Semiconductor laser device
JPH10229246A (ja) リッジ型半導体レーザダイオードとその製造方法
JPH05327112A (ja) 半導体レーザの製造方法
GB2221093A (en) A semiconductor laser device and production method thereof
JPS63166281A (ja) 分布帰還型半導体レ−ザ装置
US5360763A (en) Method for fabricating an optical semiconductor device
JP3251191B2 (ja) 光通信に用いる半導体光素子
JP2001326423A (ja) 半導体光素子及びその製造方法
JP2708949B2 (ja) 半導体レーザ装置の製造方法
JPS59229889A (ja) 半導体レ−ザ製造方法
JP4024319B2 (ja) 半導体発光装置
JPH02206191A (ja) 半導体レーザ装置及びその製造方法
JP3106852B2 (ja) 分布帰還型半導体レーザおよびその製造方法
JPH04243183A (ja) 半導体レ−ザ装置及びその製造方法
JPS58158988A (ja) 分布帰還形半導体レ−ザ
JPH0745907A (ja) 分布帰還型半導体レーザ
JPS59171187A (ja) 半導体レ−ザ装置
JPH04229682A (ja) 半導体レーザの製造方法
JPH02281681A (ja) 半導体レーザ
JPS6072284A (ja) 半導体レ−ザ
JPH04324988A (ja) 半導体レーザ装置
JPS6281085A (ja) エツチングマスク
JPS60143684A (ja) 半導体レ−ザ