JPS5895876A - 光導電部材 - Google Patents
光導電部材Info
- Publication number
- JPS5895876A JPS5895876A JP56194293A JP19429381A JPS5895876A JP S5895876 A JPS5895876 A JP S5895876A JP 56194293 A JP56194293 A JP 56194293A JP 19429381 A JP19429381 A JP 19429381A JP S5895876 A JPS5895876 A JP S5895876A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- atoms
- layer region
- distribution
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56194293A JPS5895876A (ja) | 1981-12-01 | 1981-12-01 | 光導電部材 |
US06/443,164 US4460670A (en) | 1981-11-26 | 1982-11-19 | Photoconductive member with α-Si and C, N or O and dopant |
GB08233456A GB2111707B (en) | 1981-11-26 | 1982-11-24 | Photoconductive member |
DE3243928A DE3243928C2 (de) | 1981-11-26 | 1982-11-26 | Fotoleitfähiges Element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56194293A JPS5895876A (ja) | 1981-12-01 | 1981-12-01 | 光導電部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5895876A true JPS5895876A (ja) | 1983-06-07 |
JPH0325952B2 JPH0325952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-09 |
Family
ID=16322178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56194293A Granted JPS5895876A (ja) | 1981-11-26 | 1981-12-01 | 光導電部材 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5895876A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6059356A (ja) * | 1983-09-12 | 1985-04-05 | Toshiba Corp | 光導電部材 |
JPS6381433A (ja) * | 1986-09-26 | 1988-04-12 | Kyocera Corp | 電子写真感光体 |
JPS63151960A (ja) * | 1986-12-16 | 1988-06-24 | Kyocera Corp | 電子写真感光体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
JPS54145540A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
-
1981
- 1981-12-01 JP JP56194293A patent/JPS5895876A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
JPS54145540A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6059356A (ja) * | 1983-09-12 | 1985-04-05 | Toshiba Corp | 光導電部材 |
JPS6381433A (ja) * | 1986-09-26 | 1988-04-12 | Kyocera Corp | 電子写真感光体 |
JPS63151960A (ja) * | 1986-12-16 | 1988-06-24 | Kyocera Corp | 電子写真感光体 |
Also Published As
Publication number | Publication date |
---|---|
JPH0325952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-09 |