JPS5895830A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5895830A
JPS5895830A JP19308681A JP19308681A JPS5895830A JP S5895830 A JPS5895830 A JP S5895830A JP 19308681 A JP19308681 A JP 19308681A JP 19308681 A JP19308681 A JP 19308681A JP S5895830 A JPS5895830 A JP S5895830A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
silicon
laser
film
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19308681A
Inventor
Yukinobu Murao
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/318Inorganic layers composed of nitrides
    • H01L21/3185Inorganic layers composed of nitrides of siliconnitrides

Abstract

PURPOSE:To obtain a silicon nitride film with sufficient film thickness at a low temperature without using heat treatment at a high temperature by irradiating a laser to silicon in ammonia (NH3) or nitrogen (N2). CONSTITUTION:A silicon substrate 1 is placed into ammonia (NH3) gas. A CW laser is used as the laser beams 2 at that time. The silicon nitride film 3 is grown onto the surface of the silicon substrate 1 through the irradiation of the laser. The figure shows the case when the laser is irradiated to the whole surface of the silicon substrate, but the surface of a region in which silicon is exposed in the manufacturing process of the semiconductor-integrated circuit device can also be changed into the silicon nitride film through the same method, and the method can be applied extending over an extremely wide range on the manufacture of the semiconductor-integrated circuit device.
JP19308681A 1981-12-01 1981-12-01 Manufacture of semiconductor device Pending JPS5895830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19308681A JPS5895830A (en) 1981-12-01 1981-12-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19308681A JPS5895830A (en) 1981-12-01 1981-12-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5895830A true true JPS5895830A (en) 1983-06-07

Family

ID=16301988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19308681A Pending JPS5895830A (en) 1981-12-01 1981-12-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5895830A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
EP0766294A2 (en) * 1995-09-29 1997-04-02 Canon Kabushiki Kaisha Thin film semiconducteur devices and methods of manufacturing the same
US7618880B1 (en) * 2004-02-19 2009-11-17 Quick Nathaniel R Apparatus and method for transformation of substrate
US7811914B1 (en) 2006-04-20 2010-10-12 Quick Nathaniel R Apparatus and method for increasing thermal conductivity of a substrate
US8067303B1 (en) 2006-09-12 2011-11-29 Partial Assignment University of Central Florida Solid state energy conversion device
US8080836B2 (en) 2004-06-01 2011-12-20 University Of Central Florida Embedded semiconductor component
US8114693B1 (en) 2007-09-18 2012-02-14 Partial Assignment University of Central Florida Method of fabricating solid state gas dissociating device by laser doping
US8393289B2 (en) 2004-07-26 2013-03-12 University Of Central Florida Laser assisted nano deposition
US8617965B1 (en) 2004-02-19 2013-12-31 Partial Assignment to University of Central Florida Apparatus and method of forming high crystalline quality layer
US8828769B2 (en) 2008-12-02 2014-09-09 University Of Central Florida Energy conversion device
US8912549B2 (en) 2005-01-26 2014-12-16 University Of Central Florida Optical device and method of making

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0429222B2 (en) * 1983-06-14 1992-05-18
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
EP0766294A3 (en) * 1995-09-29 1998-03-04 Canon Kabushiki Kaisha Thin film semiconducteur devices and methods of manufacturing the same
US6214684B1 (en) 1995-09-29 2001-04-10 Canon Kabushiki Kaisha Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator
EP0766294A2 (en) * 1995-09-29 1997-04-02 Canon Kabushiki Kaisha Thin film semiconducteur devices and methods of manufacturing the same
US8617965B1 (en) 2004-02-19 2013-12-31 Partial Assignment to University of Central Florida Apparatus and method of forming high crystalline quality layer
US7618880B1 (en) * 2004-02-19 2009-11-17 Quick Nathaniel R Apparatus and method for transformation of substrate
US7897492B2 (en) * 2004-02-19 2011-03-01 Quick Nathaniel R Apparatus and method for transformation of substrate
US8080836B2 (en) 2004-06-01 2011-12-20 University Of Central Florida Embedded semiconductor component
US8393289B2 (en) 2004-07-26 2013-03-12 University Of Central Florida Laser assisted nano deposition
US8912549B2 (en) 2005-01-26 2014-12-16 University Of Central Florida Optical device and method of making
US7811914B1 (en) 2006-04-20 2010-10-12 Quick Nathaniel R Apparatus and method for increasing thermal conductivity of a substrate
US8722451B2 (en) 2006-09-12 2014-05-13 University Of Central Florida Solid state energy photovoltaic device
US8067303B1 (en) 2006-09-12 2011-11-29 Partial Assignment University of Central Florida Solid state energy conversion device
US8114693B1 (en) 2007-09-18 2012-02-14 Partial Assignment University of Central Florida Method of fabricating solid state gas dissociating device by laser doping
US8674373B2 (en) 2007-09-18 2014-03-18 University Of Central Florida Solid state gas dissociating device, solid state sensor, and solid state transformer
US8828769B2 (en) 2008-12-02 2014-09-09 University Of Central Florida Energy conversion device

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