JPS5895830A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5895830A JPS5895830A JP56193086A JP19308681A JPS5895830A JP S5895830 A JPS5895830 A JP S5895830A JP 56193086 A JP56193086 A JP 56193086A JP 19308681 A JP19308681 A JP 19308681A JP S5895830 A JPS5895830 A JP S5895830A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- nitride film
- laser
- silicon nitride
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、シリコンを低温で直接窒化シリコン膜に変
換する半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device that directly converts silicon into a silicon nitride film at low temperatures.
従来、シリコンを直接窒化シリコン膜に変換するには、
アンモニア（Ｎｕｓ ）あるいは窒素（Ｎ、）ガス中で
、高温の熱処理が行なわれてきた。しかしながら、従来
法では、窒化シリコン膜の成長速度が非常に小さく、半
導体・集積回路装置に用いるに必要な窒化シリコン膜を
得ることは困難であった。Traditionally, to convert silicon directly into silicon nitride film,
High temperature heat treatment has been performed in ammonia (Nus) or nitrogen (N) gas. However, in the conventional method, the growth rate of the silicon nitride film is extremely slow, making it difficult to obtain a silicon nitride film necessary for use in semiconductor/integrated circuit devices.
この発明は、従来の高温の熱処理を用いず、しかも低温
で十分な膜厚をもつ窒化シリコン膜を得ることを目的と
している。The object of the present invention is to obtain a silicon nitride film having a sufficient thickness at a low temperature without using conventional high-temperature heat treatment.
本発明の特徴は、アンモニア（ＮＨｓ ’）あるいは窒
素（Ｎｔ）中でシリコンをレーザー・照射することによ
りこのシリコンの表面を直接窒化シリコン膜に変換する
半導体装置の製造方法にある。A feature of the present invention is a method of manufacturing a semiconductor device in which the surface of silicon is directly converted into a silicon nitride film by irradiating silicon with a laser in ammonia (NHs') or nitrogen (Nt).
本発明によれば、従来不可能だったシリコン基板表面の
窒化が低温で容易に行なえる。According to the present invention, the surface of a silicon substrate can be easily nitrided at a low temperature, which was previously impossible.
以下、図面を用いて本発明の実施例について説明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図の曲線ａは、従来のシリコンをＮＩ（、ガス雰囲
気中で１１００℃の熱処理をして得られる窒化シリコン
膜厚の熱処理時間依存性を示す。縦軸は窒化シリコン膜
厚ｔｓｌｌＮ＋ であり、横軸は熱処理時間ｔである。Curve a in Figure 1 shows the dependence of the silicon nitride film thickness on the heat treatment time obtained by heat-treating conventional silicon at 1100°C in a NI gas atmosphere.The vertical axis is the silicon nitride film thickness tsllN+. , the horizontal axis is the heat treatment time t.
従来法では、１１００℃で長時間熱処理しても得られる
窒化シリコン膜厚は高々４０Ｘ程度である。In the conventional method, the silicon nitride film thickness obtained even after long-term heat treatment at 1100° C. is about 40× at most.
一方、曲線すは本発明法のＮＵ、ガス中でシリコンをレ
ーザー照射した場合の、シリコン表面に成長する窒化シ
リコン膜厚のレーザー照射時間依存性である。図から分
るように、きわめて短時間で十分な膜厚を有する窒化シ
リコン膜を得ることができる。さらに、レーザーを用い
るので室温で窒化シリコン族を形成することができる。On the other hand, the curved line shows the dependence of the thickness of the silicon nitride film grown on the silicon surface on the laser irradiation time when silicon is irradiated with laser in the NU gas according to the present invention. As can be seen from the figure, a silicon nitride film having a sufficient thickness can be obtained in a very short time. Furthermore, since a laser is used, the silicon nitride group can be formed at room temperature.
第２図に本発明の一実施例を示す。図においてシリコン
基板１はアンモニア（ＮＨＡ） ガス中におかれている
。レーザー光線２はこの場合ＯＷレーザーである。レー
ザー照射によりシリコン基板１表面上に窒化シリコン膜
３が成長する。FIG. 2 shows an embodiment of the present invention. In the figure, a silicon substrate 1 is placed in ammonia (NHA) gas. The laser beam 2 is in this case an OW laser. A silicon nitride film 3 is grown on the surface of the silicon substrate 1 by laser irradiation.
この実施例では、シリコン基板表面全面にレーザ照射を
行なった場合を示したが、半導体・集積回路装置の製造
工程中シリコンの露出した領域表面を窒化シリコン膜に
かえることも同様の方法ででき、半導体・集積回路装置
製作上きわめて広い応用をこの発明は行なうことができ
る。Although this example shows the case where the entire surface of the silicon substrate is irradiated with laser, it is also possible to use a similar method to replace the surface of the exposed area of silicon with a silicon nitride film during the manufacturing process of semiconductor/integrated circuit devices. This invention can be applied to a very wide range of applications in the production of semiconductor/integrated circuit devices.
第１図は従来法と本発明法による窒化シリコン膜厚と形
成に必要な時間との関係を示す図、第２図は本発明実施
例の部分断面図である。
なお図において、ａ・・・・・・従来法による窒化シリ
コン膜の成長曲線、ｂ・・・・・・本発明による窒化シ
リコン膜の成長曲線、１・・・・・・シリコン基板、２
°・・・・・レーザ光線、３・・・°°・窒化シリコン
膜、である。
＄ｆ閉
第２凹FIG. 1 is a diagram showing the relationship between the silicon nitride film thickness and the time required for formation by the conventional method and the method of the present invention, and FIG. 2 is a partial cross-sectional view of an example of the present invention. In the figures, a... growth curve of silicon nitride film by conventional method, b... growth curve of silicon nitride film according to the present invention, 1... silicon substrate, 2
°... Laser beam, 3...°° Silicon nitride film. $f Closed second recess
Claims (1)
ンをレーザー・照射することにより該シリコン表面を直
接窒化シリコン膜に変換することを特徴とする半導体装
置の製造方法。A method for manufacturing a semiconductor device, characterized in that the surface of silicon is directly converted into a silicon nitride film by irradiating silicon with a laser in ammonia (MHI) or nitrogen* (Nl).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56193086A JPS5895830A (en) | 1981-12-01 | 1981-12-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56193086A JPS5895830A (en) | 1981-12-01 | 1981-12-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5895830A true JPS5895830A (en) | 1983-06-07 |
Family
ID=16301988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56193086A Pending JPS5895830A (en) | 1981-12-01 | 1981-12-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895830A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231822A (en) * | 1983-06-14 | 1984-12-26 | Toshiba Corp | Formation of nitride film |
| EP0766294A2 (en) * | 1995-09-29 | 1997-04-02 | Canon Kabushiki Kaisha | Thin film semiconducteur devices and methods of manufacturing the same |
| US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| US7811914B1 (en) | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
| US8067303B1 (en) | 2006-09-12 | 2011-11-29 | Partial Assignment University of Central Florida | Solid state energy conversion device |
| US8080836B2 (en) | 2004-06-01 | 2011-12-20 | University Of Central Florida | Embedded semiconductor component |
| US8114693B1 (en) | 2007-09-18 | 2012-02-14 | Partial Assignment University of Central Florida | Method of fabricating solid state gas dissociating device by laser doping |
| US8393289B2 (en) | 2004-07-26 | 2013-03-12 | University Of Central Florida | Laser assisted nano deposition |
| US8617965B1 (en) | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
| US8828769B2 (en) | 2008-12-02 | 2014-09-09 | University Of Central Florida | Energy conversion device |
| US8912549B2 (en) | 2005-01-26 | 2014-12-16 | University Of Central Florida | Optical device and method of making |
| WO2022052334A1 (en) * | 2020-09-11 | 2022-03-17 | 江苏大学 | Room-temperature nitriding process based on thermal-mechanical effects of laser, and processing device |
-
1981
- 1981-12-01 JP JP56193086A patent/JPS5895830A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231822A (en) * | 1983-06-14 | 1984-12-26 | Toshiba Corp | Formation of nitride film |
| JPH0429222B2 (en) * | 1983-06-14 | 1992-05-18 | ||
| EP0766294A2 (en) * | 1995-09-29 | 1997-04-02 | Canon Kabushiki Kaisha | Thin film semiconducteur devices and methods of manufacturing the same |
| EP0766294A3 (en) * | 1995-09-29 | 1998-03-04 | Canon Kabushiki Kaisha | Thin film semiconducteur devices and methods of manufacturing the same |
| US6214684B1 (en) | 1995-09-29 | 2001-04-10 | Canon Kabushiki Kaisha | Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator |
| US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| US8617965B1 (en) | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
| US7897492B2 (en) * | 2004-02-19 | 2011-03-01 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| US8080836B2 (en) | 2004-06-01 | 2011-12-20 | University Of Central Florida | Embedded semiconductor component |
| US8393289B2 (en) | 2004-07-26 | 2013-03-12 | University Of Central Florida | Laser assisted nano deposition |
| US8912549B2 (en) | 2005-01-26 | 2014-12-16 | University Of Central Florida | Optical device and method of making |
| US7811914B1 (en) | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
| US8722451B2 (en) | 2006-09-12 | 2014-05-13 | University Of Central Florida | Solid state energy photovoltaic device |
| US8067303B1 (en) | 2006-09-12 | 2011-11-29 | Partial Assignment University of Central Florida | Solid state energy conversion device |
| US8114693B1 (en) | 2007-09-18 | 2012-02-14 | Partial Assignment University of Central Florida | Method of fabricating solid state gas dissociating device by laser doping |
| US8674373B2 (en) | 2007-09-18 | 2014-03-18 | University Of Central Florida | Solid state gas dissociating device, solid state sensor, and solid state transformer |
| US8828769B2 (en) | 2008-12-02 | 2014-09-09 | University Of Central Florida | Energy conversion device |
| WO2022052334A1 (en) * | 2020-09-11 | 2022-03-17 | 江苏大学 | Room-temperature nitriding process based on thermal-mechanical effects of laser, and processing device |
| GB2614984A (en) * | 2020-09-11 | 2023-07-26 | Univ Jiangsu | Room-temperature nitriding process based on thermal-mechanical effects of laser, and processing device |
| GB2614984B (en) * | 2020-09-11 | 2024-02-14 | Univ Jiangsu | Room-temperature nitriding process based on thermal-mechanical effects of laser, and processing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5895830A (en) | Manufacture of semiconductor device | |
| JPS56135969A (en) | Manufacture of semiconductor device | |
| EP0248445A3 (en) | Semiconductor device having a diffusion barrier and process for its production | |
| JPS56142630A (en) | Manufacture of semiconductor device | |
| JPH0231493B2 (en) | ||
| US2898247A (en) | Fabrication of diffused junction semi-conductor devices | |
| KR920003414A (en) | High melting point metal growth method | |
| JPS637624A (en) | Method of diffusing material providing conductivity type into compound semiconductor material of group iii-v | |
| FR2371777A1 (en) | METHOD OF MANUFACTURING A SILICON NITRIDE DIFFUSION BARRIER ON A SEMICONDUCTOR SUBSTRATE, IN PARTICULAR OF THE III-V TYPE | |
| JPS5737830A (en) | Manufacture of semiconductor device | |
| JPS5615070A (en) | Semiconductor device | |
| KR950001931A (en) | Heat treatment method of semiconductor substrate | |
| JPS6223453B2 (en) | ||
| JPS59103375A (en) | Manufacture for semiconductor device with shottky junction | |
| JPH0212010B2 (en) | ||
| JPS5918635A (en) | Mask for x-ray lithography | |
| JPS61191016A (en) | Manufacture of semiconductor substrate | |
| JPS6116530A (en) | Manufacture of semiconductor device | |
| EP0023925A4 (en) | Method of producing insulating film for semiconductor surfaces and semiconductor device with such film. | |
| JPS57104230A (en) | Semiconductor device and its manufacture | |
| JP2711959B2 (en) | Method of forming nitride film of group III element | |
| JPH01235333A (en) | Heat treatment of iii-v compound semiconductor | |
| SU563704A1 (en) | Method of manufacturing the semi-conductors | |
| JPS62141727A (en) | Manufacture of semiconductor device | |
| JPS566434A (en) | Manufacture of semiconductor device |