JPS5893247A - 流体圧で駆動される半導体ウエ−ハ締付け装置 - Google Patents
流体圧で駆動される半導体ウエ−ハ締付け装置Info
- Publication number
- JPS5893247A JPS5893247A JP20383582A JP20383582A JPS5893247A JP S5893247 A JPS5893247 A JP S5893247A JP 20383582 A JP20383582 A JP 20383582A JP 20383582 A JP20383582 A JP 20383582A JP S5893247 A JPS5893247 A JP S5893247A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pressure plate
- fluid
- plate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000012530 fluid Substances 0.000 claims description 66
- 230000006835 compression Effects 0.000 claims description 30
- 238000007906 compression Methods 0.000 claims description 30
- 238000001816 cooling Methods 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 90
- 238000010884 ion-beam technique Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32451281A | 1981-11-24 | 1981-11-24 | |
| US324512 | 1989-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5893247A true JPS5893247A (ja) | 1983-06-02 |
Family
ID=23263921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20383582A Pending JPS5893247A (ja) | 1981-11-24 | 1982-11-22 | 流体圧で駆動される半導体ウエ−ハ締付け装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5893247A (enExample) |
| DE (1) | DE3242856A1 (enExample) |
| FR (1) | FR2517124A1 (enExample) |
| GB (1) | GB2109996B (enExample) |
| NL (1) | NL8204560A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62272441A (ja) * | 1986-05-20 | 1987-11-26 | Tokyo Electron Ltd | イオン注入装置におけるウエハ保持装置 |
| JPS62272445A (ja) * | 1986-05-20 | 1987-11-26 | Tokyo Electron Ltd | 半導体製造装置用高真空チヤンバ−における駆動装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4778559A (en) * | 1986-10-15 | 1988-10-18 | Advantage Production Technology | Semiconductor substrate heater and reactor process and apparatus |
| US4938815A (en) * | 1986-10-15 | 1990-07-03 | Advantage Production Technology, Inc. | Semiconductor substrate heater and reactor process and apparatus |
| US5044314A (en) * | 1986-10-15 | 1991-09-03 | Advantage Production Technology, Inc. | Semiconductor wafer processing apparatus |
| US4956046A (en) * | 1986-10-15 | 1990-09-11 | Advantage Production Technology, Inc. | Semiconductor substrate treating method |
| US4891335A (en) * | 1986-10-15 | 1990-01-02 | Advantage Production Technology Inc. | Semiconductor substrate heater and reactor process and apparatus |
| US7385821B1 (en) * | 2001-12-06 | 2008-06-10 | Apple Inc. | Cooling method for ICS |
| CH697200A5 (de) | 2004-10-01 | 2008-06-25 | Oerlikon Assembly Equipment Ag | Klemmvorrichtung und Transportvorrichtung zum Transportieren von Substraten. |
| CN110379729B (zh) * | 2018-04-13 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 加热基座及半导体加工设备 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4282924A (en) * | 1979-03-16 | 1981-08-11 | Varian Associates, Inc. | Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface |
| FR2501907A1 (fr) * | 1981-03-13 | 1982-09-17 | Thomson Csf | Procede de positionnement, de maintien d'un substrat plan sur une platine porte-substrat et de retrait de ce substrat ainsi que l'appareillage pour la mise en oeuvre du procede |
-
1982
- 1982-11-11 GB GB08232241A patent/GB2109996B/en not_active Expired
- 1982-11-19 DE DE19823242856 patent/DE3242856A1/de not_active Withdrawn
- 1982-11-22 JP JP20383582A patent/JPS5893247A/ja active Pending
- 1982-11-23 FR FR8219603A patent/FR2517124A1/fr active Granted
- 1982-11-23 NL NL8204560A patent/NL8204560A/nl not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62272441A (ja) * | 1986-05-20 | 1987-11-26 | Tokyo Electron Ltd | イオン注入装置におけるウエハ保持装置 |
| JPS62272445A (ja) * | 1986-05-20 | 1987-11-26 | Tokyo Electron Ltd | 半導体製造装置用高真空チヤンバ−における駆動装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2109996A (en) | 1983-06-08 |
| DE3242856A1 (de) | 1983-06-01 |
| FR2517124B1 (enExample) | 1985-02-15 |
| NL8204560A (nl) | 1983-06-16 |
| FR2517124A1 (fr) | 1983-05-27 |
| GB2109996B (en) | 1985-08-07 |
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