JPS5891173A - プラズマエツチング中のラジカル診断装置 - Google Patents
プラズマエツチング中のラジカル診断装置Info
- Publication number
- JPS5891173A JPS5891173A JP18915781A JP18915781A JPS5891173A JP S5891173 A JPS5891173 A JP S5891173A JP 18915781 A JP18915781 A JP 18915781A JP 18915781 A JP18915781 A JP 18915781A JP S5891173 A JPS5891173 A JP S5891173A
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- radicals
- plasma
- radical
- mass spectrometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 238000012806 monitoring device Methods 0.000 claims abstract 2
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000003745 diagnosis Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 5
- 238000004949 mass spectrometry Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000713879 Homo sapiens T-complex protein 1 subunit eta Proteins 0.000 description 1
- 208000003028 Stuttering Diseases 0.000 description 1
- 102100036476 T-complex protein 1 subunit eta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000011121 hardwood Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000013138 pruning Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18915781A JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18915781A JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891173A true JPS5891173A (ja) | 1983-05-31 |
| JPH0123937B2 JPH0123937B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=16236394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18915781A Granted JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5891173A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066823A (ja) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
-
1981
- 1981-11-27 JP JP18915781A patent/JPS5891173A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066823A (ja) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0123937B2 (enrdf_load_stackoverflow) | 1989-05-09 |
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