JPH0123937B2 - - Google Patents
Info
- Publication number
- JPH0123937B2 JPH0123937B2 JP18915781A JP18915781A JPH0123937B2 JP H0123937 B2 JPH0123937 B2 JP H0123937B2 JP 18915781 A JP18915781 A JP 18915781A JP 18915781 A JP18915781 A JP 18915781A JP H0123937 B2 JPH0123937 B2 JP H0123937B2
- Authority
- JP
- Japan
- Prior art keywords
- radicals
- plasma
- mass spectrometer
- energy
- ionization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003745 diagnosis Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims 1
- 150000003254 radicals Chemical class 0.000 description 36
- 239000007789 gas Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- 238000004949 mass spectrometry Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ZBZJXHCVGLJWFG-UHFFFAOYSA-N trichloromethyl(.) Chemical compound Cl[C](Cl)Cl ZBZJXHCVGLJWFG-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18915781A JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18915781A JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891173A JPS5891173A (ja) | 1983-05-31 |
| JPH0123937B2 true JPH0123937B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=16236394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18915781A Granted JPS5891173A (ja) | 1981-11-27 | 1981-11-27 | プラズマエツチング中のラジカル診断装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5891173A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066823A (ja) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
-
1981
- 1981-11-27 JP JP18915781A patent/JPS5891173A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5891173A (ja) | 1983-05-31 |
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