JPS5889868A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5889868A JPS5889868A JP56188096A JP18809681A JPS5889868A JP S5889868 A JPS5889868 A JP S5889868A JP 56188096 A JP56188096 A JP 56188096A JP 18809681 A JP18809681 A JP 18809681A JP S5889868 A JPS5889868 A JP S5889868A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- silicon
- semiconductor device
- film
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 150000002500 ions Chemical class 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 241000257303 Hymenoptera Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188096A JPS5889868A (ja) | 1981-11-24 | 1981-11-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188096A JPS5889868A (ja) | 1981-11-24 | 1981-11-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5889868A true JPS5889868A (ja) | 1983-05-28 |
| JPH024134B2 JPH024134B2 (enrdf_load_stackoverflow) | 1990-01-26 |
Family
ID=16217625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56188096A Granted JPS5889868A (ja) | 1981-11-24 | 1981-11-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5889868A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6081823A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US4683637A (en) * | 1986-02-07 | 1987-08-04 | Motorola, Inc. | Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
| JPH027436A (ja) * | 1988-06-24 | 1990-01-11 | Sony Corp | 半導体装置の製造方法 |
-
1981
- 1981-11-24 JP JP56188096A patent/JPS5889868A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6081823A (ja) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US4683637A (en) * | 1986-02-07 | 1987-08-04 | Motorola, Inc. | Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
| WO1987004860A1 (en) * | 1986-02-07 | 1987-08-13 | Motorola, Inc. | Partially dielectrically isolated semiconductor devices |
| JPH027436A (ja) * | 1988-06-24 | 1990-01-11 | Sony Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH024134B2 (enrdf_load_stackoverflow) | 1990-01-26 |
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