JPS5888815A - Production of thin film magnetic head - Google Patents

Production of thin film magnetic head

Info

Publication number
JPS5888815A
JPS5888815A JP18635681A JP18635681A JPS5888815A JP S5888815 A JPS5888815 A JP S5888815A JP 18635681 A JP18635681 A JP 18635681A JP 18635681 A JP18635681 A JP 18635681A JP S5888815 A JPS5888815 A JP S5888815A
Authority
JP
Japan
Prior art keywords
layer
thin film
photoresist
magnetic material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18635681A
Other languages
Japanese (ja)
Inventor
Kazuhiko Yamada
一彦 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18635681A priority Critical patent/JPS5888815A/en
Publication of JPS5888815A publication Critical patent/JPS5888815A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Abstract

PURPOSE:To convert easily an upper magnetic matter into a pattern of a prescribed shape, by forming a photoresist layer so as to eliminate the difference of level at a front gap part for the photoresist which is used to form the upper magnetic matter of a thin film magnetic head. CONSTITUTION:An insulated layer 32, a lower magnetic matter 33 of ''Permalloy '', etc., an insulated layer 34 serving as a gap, a level difference eliminating layer 37 of an organic material, and an upper magnetic matter 38 of NiFe, etc. are formed on a substrate 31. Then the 1st photoresist layer 39 is coated with 1/3 thicknesses T2 and T1 compared with the height of the level difference A of the front gap part. A metallic thin film of Ti, Cr or Al is formed on the layer 39 to be used as a mask material when the layer 39 is etched with an ion. Then the 2nd photoresist layer is formed on the mtallic thin film. A prescribed pattern is formed by an ion eithing process in an atmosphere of O2 and Ar. In such a way, a thin film magnetic head is obtained in an easy way.

Description

【発明の詳細な説明】 本発明は磁気記録装置等に用いられる薄−磁気ヘッドの
製造方法に関し、特に上部−柱体の形成方法Kllする
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a thin magnetic head used in a magnetic recording device and the like, and particularly relates to a method of forming an upper column.

近拳実用に供されている薄IN!磁気ヘッドの代表的な
エレメントの構成を第1図に示す。
Usukuin used for practical use in close fist! FIG. 1 shows the configuration of typical elements of a magnetic head.

111mにおいて基板ll上にスパッタリング等によル
ム1208などの絶縁層12t−形成し、ついでパーマ
ロイ等の軟m性体を成−し下部ffl注体13を形成す
る。その後、ギャップとなる所定膜厚のAl、(j、な
どの絶縁層14を成膜する。ついでリアギャップBBの
絶縁層をエツチングにて除去し。
In step 111m, an insulating layer 12t such as a lumen 1208 is formed on the substrate 11 by sputtering or the like, and then a soft material such as permalloy is formed to form the lower ffl injection body 13. Thereafter, an insulating layer 14 of Al, (j, etc.) having a predetermined thickness is formed to form a gap.Then, the insulating layer in the rear gap BB is removed by etching.

その後下部a柱体となる軟磁性体130段差を勢消する
為に有機物層15を形成し、所定!!度で加熱処理を施
す、ついで導体膜を成膜しコイル16を形成して、その
上に再度有機物層17管形成して、有機物層15と同様
に所定温度で加熱処理を總こす、I!に、パーマロイ尋
の軟磁性体18を成娯し所定形状の上部m性体とし薄線
磁気ヘッドが構成される。f#、第1図では、最後に形
成されるAI、Oa等より成る保5isiは省略されて
いる。
Thereafter, an organic layer 15 is formed to eliminate the step of the soft magnetic material 130 that will become the lower a-column, and a predetermined amount is formed. ! Then, a conductive film is formed to form a coil 16, an organic layer 17 is again formed on it, and a heat treatment is performed at a predetermined temperature in the same manner as the organic layer 15.I! Next, a soft magnetic material 18 made of permalloy material is formed into an upper magnetic material having a predetermined shape, and a thin wire magnetic head is constructed. f#, in FIG. 1, the last-formed barrier 5isi consisting of AI, Oa, etc. is omitted.

この機な薄111!気ヘッドの製造上、%に上部磁性体
となる軟磁性体18を所定形状に8成する工程に関する
1つの大きな問題は、薄1llal気ヘッドの構造上a
l1図中矢印Aで示し友釣lOμmの段差を介して軟i
aa体を微細パターンに加工しなければならないという
必然から生ずる。すなわちパーマロイ等の軟iIl柱体
18を成IIIIuk1上部磁性体のパターン形成用の
7オトレジストをスピンコーティングしたII、 *述
O段差部にフォトレジストが溜シ露党現鐵処塩を行なっ
ても段差部周辺にフォトレジストが亀光残夛として残存
してしまい、正確なフォトレジストパターンを形成する
ことが困難であ夛、結果として上部iIl性体柱体定形
状にエツチングすることが極めてむずかしかった。しか
も通常パーマロイの微細パターンを形成する為にAt雰
囲気てイオンエツチングする際、フォトレジストとして
必要な操犀は被エツチング物であるパーマロイ−犀の5
0X増である為前述のフォトレジストの溜シは一層顕著
なものとなシ薄IIfIk気ヘッドの製造プロセスの信
頼性、再Jlj性を大きく阻害していた。又、前述の7
オトレジストの残存を回避する為、露光時間あるいは現
一時間倉艇めにすると、フォトレジストパターンの他の
部分に過剰露光あるいは過剰風1の箇所が生じ、フォト
レジストパターンが細ったり、あるいは断面形状が台形
状に形成される等の恐れがあった。#に台形状の断面形
状を有するフォトレジストパターンは矩形状の断面形状
を有するものと比較してイオンエツチング中の7オトレ
ジストノ(ターンの後退が著しいことが知られておシ、
その為エツチング後の上部磁性体の形状が設計値に比較
して小さくな夛過ぎ所定形状の上部磁性体を実現するこ
とか困難であった。
This machine is thin 111! One major problem with the process of forming the soft magnetic material 18, which becomes the upper magnetic material, into a predetermined shape in manufacturing the magnetic head is that, due to the structure of the thin 1llal magnetic head,
11 Indicated by arrow A in the figure, the soft i
This arises from the necessity of processing the aa body into a fine pattern. In other words, a soft iIl column 18 made of permalloy or the like is formed by spin coating with photoresist for pattern formation of the upper magnetic material. The photoresist remains as traces around the area, making it difficult to form an accurate photoresist pattern, and as a result, it is extremely difficult to etch the upper iIl column into a regular shape. Moreover, when performing ion etching in an At atmosphere to form a fine pattern of permalloy, the etching required as a photoresist is usually performed by etching 50% of the permalloy material to be etched.
Because of the 0x increase, the aforementioned photoresist build-up became even more noticeable, which greatly impeded the reliability and reproducibility of the manufacturing process of the thin IIfIk head. Also, the above 7
In order to avoid photoresist remaining, if the exposure time or current time is set at 1 hour, overexposure or excessive airflow will occur in other parts of the photoresist pattern, resulting in thinning of the photoresist pattern or a change in cross-sectional shape. There was a fear that it would be formed into a trapezoidal shape. It is known that a photoresist pattern having a trapezoidal cross-sectional shape has a significant turn regression during ion etching compared to a photoresist pattern having a rectangular cross-sectional shape.
For this reason, the shape of the upper magnetic body after etching is too small compared to the design value, making it difficult to realize the upper magnetic body in a predetermined shape.

本発明は以上の点に鑑み、WaS気ヘッドの上部a性体
形成用の7オトレジストノくターンを精度良く所定形状
に形成し、上Saa体のエツチング加工を容易に行なえ
る薄膜磁気ヘッドの製造方法を提供することを目的とす
るものである。
In view of the above points, the present invention has been devised to form a thin film magnetic head manufacturing method in which seven turns of photoresist for forming the upper Saa body of a WaS magnetic head are formed into a predetermined shape with high precision, and the etching process of the upper Saa body can be easily performed. The purpose is to provide the following.

本発明によれば、薄膜−気ヘッドの製造プロセスにおい
て、既にTwAIIaa体、ギャップ層、コイル及び段
差解消層が形成された基板上に上1di注体となるパー
マロイ等の軟磁性体を成ia*、xiの7オトレジスト
層を少なくともフロントギャップ−の段葺O高さの3分
の1の厚みとなる様に一紀基板上全面に塗布する工41
.この91のフォトレジスト層上に金&4藩論を成娯す
る工程、その俵#1記金属薄論上に第2のフォトレジス
ト層を塗布し、ii党現鐵によυ所定の上部−上体形成
用7オドレジストパターンを形成する工程、前記金属薄
膜をエツチングしてメタルパターンを形成する工S、こ
のメタルパターンをマスク材として酸素雰囲気中でイオ
ンエツチングを行ない、前記WX1の7オトレジスト鳩
をパターン化する工程、#述の#11の7オトレジスト
層のエツチング完了@*に雰囲気ガスを酸素よJArガ
スに置換し、引き続IA、雰囲気中で前記上部磁性体を
成す軟磁性体のイオンエツチングを行なう工程とを含む
ことを特徴とする薄i*鴫気ヘッドの製造方法が提供さ
れる。
According to the present invention, in the manufacturing process of a thin-film-air head, a soft magnetic material such as permalloy is formed on a substrate on which a TwAIIaa body, a gap layer, a coil, and a step elimination layer have already been formed. Step 41: Coating 7 photoresist layers of , xi over the entire surface of the primary substrate so that the thickness is at least one-third of the height of the step O of the front gap.
.. In the process of applying gold & 4 layers on this 91 photoresist layer, a second photoresist layer is applied on the metal layer #1, and a predetermined upper part is A step of forming a 7-oto-resist pattern for body formation, step S of etching the metal thin film to form a metal pattern, and performing ion etching in an oxygen atmosphere using this metal pattern as a mask material to form the 7-oto-resist pattern of WX1. In the patterning process, after the etching of the 7 photoresist layer in #11 described above is completed @*, the atmosphere gas is replaced with oxygen or JAr gas, and then IA is performed, and the soft magnetic material forming the upper magnetic material is ion etched in the atmosphere. Provided is a method for manufacturing a thin i* air head, the method comprising the steps of:

以下に本発明の実m列について図面を参照し女から述べ
る。第2図は本発明による薄S磁気ヘッドの製造プロセ
スを示しておハ上下磁性体の〕pントギャップ部近傍を
上下磁性体の長手方向く対して直角方向に切断した時の
概略断面図である。
The actual m-series of the present invention will be described below with reference to the drawings. Fig. 2 shows the manufacturing process of the thin S magnetic head according to the present invention, and is a schematic cross-sectional view taken near the [pnt gap] of the upper and lower magnetic bodies in a direction perpendicular to the longitudinal direction of the upper and lower magnetic bodies. be.

すなわち第2図(a) において、既に下V16al性
体23、ギャップとなる絶縁層24および下部mF!E
体23に対する段差解消層、コイルおよびコイルに対す
る段差解消層(最後の3つは図示されていいない)が形
成された基板21上全fjJK上部磁性体となるN1c
e等の所定一厚の軟磁性体25がスパッタリング等によ
って成喚され、ついで第2図(b) K示した如くシブ
レー社製のAZ系フォトレジストをスピンコーティング
によシ前記基板21上に塗布し第107オトレジスト層
26を形成する。この時、第1のフォトレジスト層26
の前原は、@1@l中矢印ムで示した段差の少なくも1
/34!度の膜厚となる様に塗布する。このときの7オ
トレジストの塗布状態を第3図に示す、第3図は上下a
l性体の長手方向の断面図であるが、前記第1O・フォ
トレジスト層39を前述の如く塗布するとコイル36の
上部のフォトレジスト層39の厚みT、 K対してギャ
ップ部でのそれT、はフォトレジストが溜る為s TI
に対して大きくなシ下部磁性体33あるいはコイル36
に対す名段差解消の役@を成す有機物實35および37
による段差Aがかなシ軽減されることとなる。
That is, in FIG. 2(a), the lower V16al material 23, the insulating layer 24 which becomes the gap, and the lower mF! E
The entire fjJK upper magnetic body is N1c on the substrate 21 on which the step eliminating layer for the body 23, the coil and the step eliminating layer for the coil (the last three are not shown) are formed.
A soft magnetic material 25 having a predetermined thickness such as e is formed by sputtering or the like, and then, as shown in FIG. Then, a 107th photoresist layer 26 is formed. At this time, the first photoresist layer 26
The front of the field is at least one of the steps indicated by the middle arrow.
/34! Apply to a film thickness of 100 mL. Figure 3 shows the state of application of 7-otoresist at this time. Figure 3 shows upper and lower a
This is a longitudinal cross-sectional view of the l-type body, and when the first O photoresist layer 39 is applied as described above, the thickness T, K of the photoresist layer 39 on the upper part of the coil 36 is different from that at the gap part T, is due to photoresist accumulation.
The lower magnetic body 33 or coil 36 is larger than the
35 and 37 of organic substances that play a role in eliminating the significant difference in
This means that the height difference A caused by this will be significantly reduced.

その後、纂2図(c)に示した通)、蒸着法などにより
金属薄1127を形成する。ついで、#g2のフォトレ
ジスト層28を塗布し、膝元・現鐵にて所定の上am性
体形成47オトレジストパターンを形成する(纂2図(
d) )e その後、化学エツチングにより不要の金属薄膜27を除
去してメタルパターンを形成する(謔2図・(e))、
ついで蒸、2fi(r)に示した通り前記メタルパター
ン27をマスクとして0ヨ41I囲気中で前述のalの
フォトレジスト層26のイオンエツチングを行なう、こ
の場合第1のフォトレジスト層26は前述のmシ、ギャ
ップ部での−4が他の部分に比較して大きい為、フォト
レジスト層26を完全に除去するまでイオンエツチング
を行なう。
Thereafter, a thin metal 1127 is formed by a vapor deposition method or the like (as shown in FIG. 2(c)). Next, a photoresist layer 28 of #g2 is applied, and a predetermined upper-am body formation 47 photoresist pattern is formed at the base of the current iron (see Figure 2).
d) )e After that, the unnecessary metal thin film 27 is removed by chemical etching to form a metal pattern (Figure 2 (e)).
Then, as shown in 2fi(r), using the metal pattern 27 as a mask, the aforementioned Al photoresist layer 26 is ion-etched in an atmosphere of 0.41I. In this case, the first photoresist layer 26 is Since -4 at the gap portion is larger than other portions, ion etching is performed until the photoresist layer 26 is completely removed.

従ってオーバーエツチングの個所が生ずるが、0゜g囲
気中での7オトレジストのイオンエッチ率はIllのフ
ォトレジスト層26の下地であるN1ce等の軟磁性体
25のイオンエツチング速度に対して1桁以上も大きい
ので実際上問題がない。
Therefore, over-etching occurs in some areas, but the ion etching rate of the 7 photoresist in a 0°g atmosphere is one order of magnitude higher than the ion etching rate of the soft magnetic material 25 such as N1ce, which is the underlying layer of the photoresist layer 26 of Ill. is also large, so there is no practical problem.

以上の様にして蘂1の7オトレジストー26のイオンエ
ツチングの完了後、02ガスをA、ガスにalml、て
上部磁性体となる軟磁性体25のイオンエツチングを行
なう(菖2図(g))、このエツチング中にパターン化
された金属[11すなわちメタルパターン27はエツチ
ングされてなくな9.第1のフォトレジスト層26の1
部もエツチングされてその膜厚は小さく17.エツチン
グ完了時点は完成される。ここで、金属薄11127と
してFi、 #素中でのイオンエツチング速kが、フォ
トレジストのそれより十分に小さい金属5列えばTi、
Cr。
After completing the ion etching of the 7th photoresist 26 of the leg 1 as described above, ion etching of the soft magnetic material 25 which will become the upper magnetic material is performed using 02 gas A and alml gas (Fig. 2 (g)). 9. During this etching, the patterned metal [11, that is, the metal pattern 27 is not etched away.9. 1 of the first photoresist layer 26
17. The part is also etched and its film thickness is small. It is completed when etching is completed. Here, the metal thin 11127 is Fi, #5 metals whose ion etching speed k in the element is sufficiently smaller than that of the photoresist are Ti,
Cr.

A1等かに歯である。It is a crab tooth like A1.

以上述べてきた様な上部磁性体の製造方法を採用するこ
とによタ、従来通夛膓元現1のみで纂1の7オトレジス
ト盾26をパターン化せず、金属111j27をマスク
として0.雰囲気中でイオンエツチングによりパターン
化を行なう為、前述した如くフォトレジストと軟WIi
柱体のイオンエツチング速度が大きく違うことから−1
のフォトレジスト層26011alllり違いによるフ
ォトレジストの残り社番夷上発生せず、又フォトレジス
トパターンのJIIJ)も殆どなく、又、フォトレジス
トパターンの断j形状も矩形形状することが可能となっ
た。その結果、上部磁性体を設計通9所定形状に形成す
ることが可能となシ薄l!磁性ヘッドの製造プロセス上
極めて大きな利点が実現されることとなる。
By adopting the manufacturing method of the upper magnetic material as described above, it is possible to use the metal 111j27 as a mask and use the metal 111j27 as a mask without patterning the resist shield 26. Since patterning is performed by ion etching in an atmosphere, photoresist and soft WIi are used as described above.
-1 because the ion etching speed of the pillars is significantly different.
There is no occurrence of photoresist residue due to misalignment of the photoresist layer 26011, and there is almost no occurrence of photoresist pattern JIIJ), and the cross-sectional shape of the photoresist pattern can also be made into a rectangular shape. . As a result, it is possible to form the upper magnetic body into a predetermined shape according to the design. Extremely large advantages will be realized in the manufacturing process of magnetic heads.

41IKIII狭トラツク薄膜磁気ヘツドの製造に際し
ては1本発明による上部thi1!性体の形柱体法が極
めて有効である。、。
In the manufacture of the 41IKIII narrow track thin film magnetic head, the upper thi1! The shape-column-body method of the gender body is extremely effective. ,.

I#1全1金属薄@をパターン化する為にsI2の7オ
トレジスト層28t−無党現嫁する際に紘、前述の如<
gxのフォトレジスト層26の塗布によ多、ギヤツブ部
人の段差の高さく第3図中矢印人で示した)が、大幅に
軽減される為、過剰m元あるいは旙光不足の問題が解消
され纂2のフォトレジスト層28は殆どマスクのパター
ン形状とお多形成される。更に金属1111127を化
学エツチングにてパターン化する段階でも、金属薄11
27の厚みが1000Aa度と薄いこと−あ夛、オーバ
ーエツチングによる細りは無視出来る。
In order to pattern I#1 all 1 metal thin @, 7 photoresist layers of sI2 28t--Hiro, as mentioned above.
Due to the coating of the photoresist layer 26 of the GX, the height difference in the height of the gear part (indicated by the arrow in Figure 3) is significantly reduced, so the problem of excessive m or insufficient light is solved. The second photoresist layer 28 is formed almost in the same pattern as the mask. Furthermore, even at the stage of patterning the metal 1111127 by chemical etching, the metal thin 11
The thickness of No. 27 is as thin as 1000 Aa degrees - the thinning caused by over etching can be ignored.

mmo簡単eaIj1 mimは薄@磁気ヘッドの構造を示す概略断面図、菖2
図拡本発明を示す概略プロセス図、又第3図はフォトレ
ジスト層の塗布状−を示す図である。
mmo simple eaIj1 mim is a schematic cross-sectional diagram showing the structure of a thin@magnetic head, iris 2
An enlarged view is a schematic process diagram showing the present invention, and FIG. 3 is a diagram showing the coating state of a photoresist layer.

図において。In fig.

11.21.31−・基板、i2,14,22゜24.
32.34・・・絶縁層、13.18,25゜38−軟
a柱体h 23*33−下部磁性体、15゜17.35
.37・−・有機物層、26.28.39−・フォトレ
ジスト層、27−金属薄!i% 16.36峠・コイル
− である。
11.21.31--Substrate, i2,14,22°24.
32.34... Insulating layer, 13.18, 25° 38-Soft a column h 23*33- Lower magnetic body, 15° 17.35
.. 37--Organic layer, 26.28.39--Photoresist layer, 27-Metal thin! i% 16.36 Pass/Coil.

第2図 28 第3図 9Figure 2 28 Figure 3 9

Claims (1)

【特許請求の範囲】 (1)  薄1lll[il&気ヘッドの製造プロセス
において、既に下部磁性体、ギャップ層、コイル及び段
差解消層が形成された基板上に上部磁性体となるパーマ
ロイ等の軟磁性体を成@後、第1の7オトレジスト層を
7gントギャップ部の段差の高さの少なくとも3分の1
の厚みと表る様に前記基板上全(jK塗布する工41!
、このmlの7オドレジスト上層に金属薄膜を成績する
工1!、その後前記金属薄−上に第2の7オトレジスト
層を塗布し路光現象により所定の上S磁性体形成用フォ
トレジストパタ・−ンを形成する工程、前記金属薄膜を
エツチングしてメタルパターンを形成する工8!、この
メタルパターンをマスク材として酸素雰囲気中でイオン
エツチングを行ない前記第1の7オトレジスト層をパタ
ーン化する工程、前述の諺lの7オトレジスト層のエツ
チング完了直後に雰囲気ガスを酸素よりムrtlスに置
換し、引きaきム「雰囲気中で%前記上5iaa体を成
す軟磁性体のイオンエツチングを行なう工程とを含むこ
とを特徴とする薄1iffllLヘッドの製造方法。 (7)sIlの7オトレジスト層のイオンエツチング時
のマスク材となるメタルパターンを成す金属薄膜がTi
、C,あるいはAIであることを特徴とする特ff請求
の範囲第1項記載の薄膜磁気ヘッドの製造方法。
[Scope of Claims] (1) In the manufacturing process of a thin 1llll[il&air head], a soft magnetic material such as permalloy, which becomes the upper magnetic material, is placed on a substrate on which a lower magnetic material, a gap layer, a coil, and a step elimination layer have already been formed. After forming the body, apply the first 7g resist layer to at least one-third of the height of the step in the gap part.
The entire surface of the board (JK coating step 41!
Step 1: Applying a metal thin film on the upper layer of this 7ml resist. Thereafter, a second photoresist layer is coated on the metal thin film to form a predetermined photoresist pattern for forming the upper S magnetic material by optical path phenomenon, and the metal pattern is etched by etching the metal thin film. Forming process 8! , a step of patterning the first seven photoresist layers by performing ion etching in an oxygen atmosphere using this metal pattern as a mask material; A method for manufacturing a thin 1iffllL head, characterized in that it includes a step of ion etching the soft magnetic material constituting the upper 5iaa body in a vacuum atmosphere. The metal thin film that forms the metal pattern that serves as a mask material during ion etching of the layer is Ti.
, C, or AI. ff. The method of manufacturing a thin film magnetic head according to claim 1.
JP18635681A 1981-11-20 1981-11-20 Production of thin film magnetic head Pending JPS5888815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18635681A JPS5888815A (en) 1981-11-20 1981-11-20 Production of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18635681A JPS5888815A (en) 1981-11-20 1981-11-20 Production of thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS5888815A true JPS5888815A (en) 1983-05-27

Family

ID=16186925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18635681A Pending JPS5888815A (en) 1981-11-20 1981-11-20 Production of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS5888815A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247816A (en) * 1984-05-24 1985-12-07 Mitsubishi Electric Corp Production of thin film magnetic head

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5696078A (en) * 1979-12-28 1981-08-03 Fujitsu Ltd Ion etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5696078A (en) * 1979-12-28 1981-08-03 Fujitsu Ltd Ion etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247816A (en) * 1984-05-24 1985-12-07 Mitsubishi Electric Corp Production of thin film magnetic head
JPH0320809B2 (en) * 1984-05-24 1991-03-20 Mitsubishi Electric Corp

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