JPS5887276A - ドライエツチング後処理方法 - Google Patents
ドライエツチング後処理方法Info
- Publication number
- JPS5887276A JPS5887276A JP18626081A JP18626081A JPS5887276A JP S5887276 A JPS5887276 A JP S5887276A JP 18626081 A JP18626081 A JP 18626081A JP 18626081 A JP18626081 A JP 18626081A JP S5887276 A JPS5887276 A JP S5887276A
- Authority
- JP
- Japan
- Prior art keywords
- film
- dry etching
- container
- aluminum
- fluorocarbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 6
- 150000002366 halogen compounds Chemical class 0.000 claims abstract description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18626081A JPS5887276A (ja) | 1981-11-19 | 1981-11-19 | ドライエツチング後処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18626081A JPS5887276A (ja) | 1981-11-19 | 1981-11-19 | ドライエツチング後処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5887276A true JPS5887276A (ja) | 1983-05-25 |
| JPS6230268B2 JPS6230268B2 (enrdf_load_stackoverflow) | 1987-07-01 |
Family
ID=16185159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18626081A Granted JPS5887276A (ja) | 1981-11-19 | 1981-11-19 | ドライエツチング後処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887276A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451293A (en) * | 1992-03-18 | 1995-09-19 | Yamaha Corporation | Method of making a wiring layer wherein the masking material is ashed using an alcohol containing plasma |
| US5698071A (en) * | 1995-04-21 | 1997-12-16 | Nec Corporation | High speed ashing method |
| US6325861B1 (en) * | 1998-09-18 | 2001-12-04 | Applied Materials, Inc. | Method for etching and cleaning a substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
-
1981
- 1981-11-19 JP JP18626081A patent/JPS5887276A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451293A (en) * | 1992-03-18 | 1995-09-19 | Yamaha Corporation | Method of making a wiring layer wherein the masking material is ashed using an alcohol containing plasma |
| US5698071A (en) * | 1995-04-21 | 1997-12-16 | Nec Corporation | High speed ashing method |
| US6325861B1 (en) * | 1998-09-18 | 2001-12-04 | Applied Materials, Inc. | Method for etching and cleaning a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6230268B2 (enrdf_load_stackoverflow) | 1987-07-01 |
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