JPS5884964A - Production of pattern plating on insulator - Google Patents
Production of pattern plating on insulatorInfo
- Publication number
- JPS5884964A JPS5884964A JP56183480A JP18348081A JPS5884964A JP S5884964 A JPS5884964 A JP S5884964A JP 56183480 A JP56183480 A JP 56183480A JP 18348081 A JP18348081 A JP 18348081A JP S5884964 A JPS5884964 A JP S5884964A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- substrate
- insulator
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
Abstract
Description
【発明の詳細な説明】
本発明は、ガラス、プラスチック、セラ叱ツク結晶体等
の絶縁体上にS n O!又は工n @ O@ 等Oa
l+化物被膜を形成し、光感光性レジストを塗布し、目
的の形状パターニングを行い、Zn粉末十要部の酸化物
被膜をエツチング処理し、レジストをはくすしてから、
B n Ot@ P A o L@混合前処理液で浸
漬処理した後、無電解メッキ液に入れて、金属被覆する
ことからなる絶縁体上へのパターンメッキ製造方法に関
する。[Detailed Description of the Invention] The present invention provides S n O! on an insulator such as glass, plastic, ceramic crystal, etc. Or 工 n @ O @ etc. Oa
After forming a l+ oxide film, applying a photosensitive resist, patterning the desired shape, etching the oxide film on ten important parts of the Zn powder, and peeling off the resist,
The present invention relates to a method for producing pattern plating on an insulator, which comprises immersing it in a B n Ot@P A o L@ mixed pretreatment solution and then placing it in an electroless plating solution for metal coating.
従来、絶縁体上に金属被覆パターニングする場合、蒸着
、スパッタ等の真空設備を用いて全面被膜をつくり、以
下状の工程に進む。Conventionally, when patterning a metal coating on an insulator, a vacuum equipment such as evaporation or sputtering is used to create a coating on the entire surface, and the following steps are performed.
(1)光感光性レジスト塗布
(工)紫外線露光
(8)現像(光照射部又は非光照射部を溶剤でエッチン
グ
(4)金属エツチング
偵)レジメ)剥離
以上のような工程を用いた場合、真空設備が高価な上、
大量又は大表面積をもつ絶縁体基板に全面金属被覆する
ことは謬しい。(1) Photosensitive resist coating (process) Ultraviolet exposure (8) Development (etching the light irradiated areas or non-light irradiated areas with a solvent (4) Metal etching regime) Peeling If the above steps are used, Vacuum equipment is expensive,
It is unethical to fully metal coat an insulator substrate with a large amount or large surface area.
また、絶縁体基板上に無電解メッキを行う場合、目的と
する金属メッキ被膜の密着性向上、及び均一なメッキ膜
を得るために、絶縁体基板面を機械的研摩、化学的研摩
、及びその両方を用いて表面な粗していた。それにもか
かわらず均一で密着性のよいメッキ膜を得ることが困難
であり作業性の問題も大きい。In addition, when performing electroless plating on an insulator substrate, in order to improve the adhesion of the intended metal plating film and to obtain a uniform plating film, the insulator substrate surface is subjected to mechanical polishing, chemical polishing, and other polishing techniques. Both were used to roughen the surface. Nevertheless, it is difficult to obtain a uniform plating film with good adhesion, and there are also serious problems in workability.
一方1!1no1又はX mg o、等酸化物被膜に密
着よく無電解メッキ被膜が形成されることを利用して次
の工程で行うことができδ。On the other hand, 1!1no1 or XmgO can be carried out in the next step by taking advantage of the fact that an electroless plating film is formed in close contact with the oxide film.
(1)絶縁体上にl1nO1又はXn@O8等の酸化物
被膜を形成し、
(R) B * o 4 P dL a 4混合前処
理液又は811 o L霊前処理(センシタイジング)
した後p a c 4前処理に遷した後
(1)無電解メッキを行い金属被覆し
く6)光感光性レジスジを塗布して
俤)紫外露光により目的の形状にノくターニングを行い
(荀不必要部のレジスFをエツチングし、(7)金属エ
ツチングしたのち
(@i1mo1又は工!l B O1等酸化物膜エツチ
ングをして(−)レジストをエツチング(剥II)をす
る。(1) Form an oxide film such as l1nO1 or
After that, it is transferred to 4 pre-treatments, (1) electroless plating is applied to metallize, 6) photosensitive resist is applied, and 2) ultraviolet exposure is applied to turn the desired shape. After etching the resist F in the necessary part, (7) etching the metal (@i1mo1 or etching!1BO1, etc.), etching the resist (-) and etching the resist (removal II).
この方法の場合、エツチング工程が増えてしまい作業短
縮化の意に反する。またレジストにわずかのピンホール
が存在していた場合、金属被膜に直接影響を及ぼすこと
となり、形成されたパターンのピンホール、サイドエツ
ジの切れにつながる可能性がある。In the case of this method, the number of etching steps increases, which is contrary to the intention of shortening the work. Furthermore, if there are even a few pinholes in the resist, this will directly affect the metal film, potentially leading to pinholes and side edge cuts in the formed pattern.
又、(Y′)の8!lot又は工n80.膜のエツチン
グ工程を除いてもかまわない場合(透明導電膜としてで
“なく、フォトマスクなどに使用)、注意する点
は、酸化被膜の変色である。透明基板を用いた場合、時
に透過率Ow1題となるものは、変色による透過率O低
下吸収波長の長波長側移行も考慮に入れて、処理しなけ
ればならない。Also, (Y') 8! lot or engineering n80. If the film etching process can be omitted (used for photomasks, etc., rather than as a transparent conductive film), be careful of discoloration of the oxide film.When using a transparent substrate, sometimes the transmittance is Ow1. The problem must be dealt with by taking into account the decrease in transmittance O due to discoloration and the shift of the absorption wavelength to longer wavelengths.
本発明はかかる欠点を除央したものでその目的は、真空
設備な用いることなく、作業工程短縮も含めて低コスト
で大量及び大表面積の基板も使え、ピンホール等のパタ
ーン不良も少ない、無電解メッキによる絶縁体上へのパ
ターンメッキ製造方法を提供するものである。The present invention eliminates these drawbacks, and its purpose is to shorten the work process without using vacuum equipment, to use a large number of substrates with large surface areas at low cost, to reduce pattern defects such as pinholes, and to eliminate pattern defects such as pinholes. The present invention provides a method for manufacturing pattern plating on an insulator by electrolytic plating.
以下実施例に基づいて本発明の詳細な説明する・
ljlは本発明のバターニング、工程であり、αは未処
理、bは酸化被膜形成後、Cは光感光性レジスジ塗布、
dは紫外線露光、−は現像後、fは酸化被膜エツチング
後、!はレジストハクリ後、轟は無電解メツ午後、1は
絶縁基板、2は酸化物被膜、5は光感光性レジスト被膜
、4は金属被膜、5はフォトマスクである。The present invention will be described in detail based on Examples below. ljl is the buttering process of the present invention, α is untreated, b is after oxide film formation, C is photosensitive resist coating,
d is after UV exposure, - is after development, f is after oxide film etching,! 1 is an insulating substrate, 2 is an oxide film, 5 is a photosensitive resist film, 4 is a metal film, and 5 is a photomask.
絶縁基板1をよく洗浄し、OVD法又は金属アルコキサ
イドの加水分解により金属酸化物被膜を得る方法を採用
した。Ch)ガラス、セラミック結晶体のように比較的
高温に耐えられるものは0マ1でもかまわないが特にプ
ラスチック基板等は、加熱温度が80℃〜100℃が限
界であるためアルコキサイドの型で処理した方がよい。The insulating substrate 1 was thoroughly cleaned, and a metal oxide film was obtained by OVD method or hydrolysis of metal alkoxide. Ch) Materials that can withstand relatively high temperatures, such as glass and ceramic crystals, can be heated to 0x1, but plastic substrates in particular have a heating temperature limit of 80°C to 100°C, so they are treated with an alkoxide mold. It's better.
金属アルコキサイドは一般弐M (OR)n で表わさ
れ、Vはこれらの金属、Rはアルキル基、ルはMO原子
価を表わしている。前記混合酸化被膜はこれらのアルコ
シサイドな適当に混合酸化被膜はこれらのアルコキサイ
ドを適当に混合することにより得られる。これらのアル
コキサイドを適当に混合することにより得られる。これ
らのアルコキサイドをα01%〜10優に適当な有機溶
媒(アルコールIII#ハロゲン化炭素類、エステル類
、ケシン類、芳香族類等)に溶解し、絶縁体基板にコー
チ鳥ングするのだが、それにはスプレー法、ロールツー
ター法、エアロゾル法、ディッピング法がある・コーテ
イング後、常温〜500℃の温度範凹で加水分解を行う
。先に述べたように各基板の耐熱限界内で加熱すること
である。Metal alkoxides are generally represented by 2M (OR)n, where V represents these metals, R represents an alkyl group, and R represents an MO valence. The mixed oxide film can be obtained by appropriately mixing these alkoxides.The mixed oxide film can be obtained by appropriately mixing these alkoxides. It can be obtained by appropriately mixing these alkoxides. These alkoxides are dissolved in an appropriate organic solvent (alcohol III #halogenated carbons, esters, carbonaceous compounds, aromatics, etc.) and coated onto an insulating substrate. There are spray methods, roll-to-toe methods, aerosol methods, and dipping methods. After coating, hydrolysis is carried out at a temperature ranging from room temperature to 500°C. As mentioned above, heating is performed within the heat resistance limit of each substrate.
m(on)s+m、o nMOsl−)−ILo
ll↑の属地で酸化物被膜が形成される。次に光感光性
レジストを塗布し、被膜を作り(C工程)、紫外線露光
を行った基板(シ工程)を現像液(t2%[01を使用
した。)に入れ、不必要部のレジストをエツチングなし
、(一工程)さらに、8nO1,1m101 などの
酸化被膜をZn粉末Mob法又グし、10%KOHにて
レジストエツチングをする。酸化物被膜パターンが得ら
れた基板に無電解メッキを行う、無電解メッキするため
に使用される前処理液は、!1no4−paot1
混合コロイド溶液又は8 n o 1!溶液、X’6a
1重溶液の分離製溶液を用い、そして、密着促進剤(酸
あるいはアルカリ溶液に211.Mu、Zn、04.ム
s、8b、liから選ばれた一種又は一種以上の金属を
溶解した液)を用いることを特徴としている。ここで密
着促進剤を用いない場合、処理部(酸化被膜形成部)以
外0曽所にもメッキされてしまい、目的の意に添わない
。本研究の前処理液として、l yx a 4溶液浸漬
(1f/l)(センシタイジング)後アクティペティン
グとして日本カニゼン社−のレッドシー−マーの5倍希
釈液を用いた。又は8not1−PdO2混合前処理液
には日立化成増感剤11B−10111を用い所定の手
段にて希釈して溶液に3分間浸漬した。水洗後日重化製
密着促進剤ムDP−201を所定の手段によって希釈し
た溶液に5分間浸漬し、充分水洗した後日本カニイン(
株)製シェーマ−8680を純水にて8倍希釈した無電
解ニッケル浴(45℃)に基板を5分間浸漬し水洗後乾
燥した。メッキ厚は35001で、密着性試験のため得
られたメッキ面で20神の圧力をかけて6@こすっても
変化がなかりた以上の例に見られるような工程で絶縁体
上にパターンメッキなされ、品質向上、工程短縮、低コ
スF化が可能になる。応用例としてはフォトマスク、エ
ンコーダースリット板1回路パターン形成、透明導電膜
端子の金属化、などがあげられる。m(on)s+m,onMOsl−)−ILo
An oxide film is formed in the region ll↑. Next, a photosensitive resist was applied to form a film (C process), and the substrate exposed to ultraviolet light (C process) was placed in a developer (T2% [01 was used) to remove unnecessary parts of the resist. No etching (one step) Furthermore, an oxide film of 8nO1, 1m101, etc. is etched using the Zn powder mob method, and resist etching is performed with 10% KOH. The pretreatment liquid used for electroless plating, which performs electroless plating on the substrate on which the oxide film pattern has been obtained, is! 1no4-paot1
Mixed colloid solution or 8 no 1! Solution, X'6a
A single-layer solution is used, and an adhesion promoter (a solution in which one or more metals selected from 211.Mu, Zn, 04.Mus, 8b, and li is dissolved in an acid or alkaline solution) It is characterized by the use of If no adhesion promoter is used here, the plating will occur in areas other than the treated area (the oxide film forming area), which does not meet the intended purpose. As a pretreatment solution in this study, a 5-fold dilution of Red Seamer from Nippon Kanigen Co., Ltd. was used as an active petting solution after immersion in a LYXA4 solution (1 f/l) (sensitizing). Alternatively, Hitachi Chemical sensitizer 11B-10111 was used as the 8not1-PdO2 mixed pretreatment solution, diluted by a predetermined method, and immersed in the solution for 3 minutes. After washing with water, soak for 5 minutes in a solution prepared by diluting the adhesion promoter Mu DP-201 manufactured by Nikkeika Co., Ltd. by a prescribed means, and after washing thoroughly with water, Nippon Kanin (
The substrate was immersed for 5 minutes in an electroless nickel bath (45° C.) in which Schemer 8680 (manufactured by Co., Ltd.) was diluted 8 times with pure water, washed with water, and then dried. The plating thickness was 35,001 mm, and there was no change even after applying 20 degrees of pressure to the plating surface obtained for the adhesion test and rubbing it for 6 times. Pattern plating was performed on the insulator using the process shown in the example above. This makes it possible to improve quality, shorten processes, and lower cost. Application examples include photomasks, encoder slit plate single circuit pattern formation, and metallization of transparent conductive film terminals.
種々の絶縁基板に最適のパターニング方法を提供するこ
とができる。An optimal patterning method can be provided for various insulating substrates.
図1は本発−のパターニング工程を説明した基板O側面
図であ−7る。
a・・・・・・未処理
b・・・・・・酸化被膜形成後
c−・・・・・光感光性レジス)1m布後d・・・・・
・紫外線露光
−・・・・・・現像後
f・・・・・・酸化被膜エツチング後
!・・・・・・レジスジエツチング後
み・・・・・・無電解メッキ後を示し
1・・・・・・絶縁基板
2・・・・・・酸化曽被膜
3・・・・・・光感光性レジスF被膜
4・・・・・・金属被膜
5・・・…7オトマスク
図−1
手続補正書(自発)
昭和58年2月 3日
特許庁長官殿
1、事件の表示
昭和56年特許願第183480号
3、補正をする者
6、補正の対象
手続補正書(自発)
1、 明細書 4頁1行目
「溶液(アクティペイティング) vcl’%47?し
て増感剤」とめるを
[ail[K浸漬して(アクティペイティング)増感剤
」に補正する。
l 明細書 6真9行目〜61f−12行目「アルコシ
サイドを適肯に混合酸「上被層はこれらのアルコキサイ
ドを適当に混合することにより得られる。・これらのア
ルコキサイドf適当に混合することにより4られる。こ
れらのアルコキサイド」とめるを
「アルコキサイドを適当に混合することにより得られる
。これらのアルコキサイド」に鞠正する。
ム 明細書 7頁1行目
[M(OR)n−17H20−+MOn4 RRO)i
↑」とある會
r M(0R)ln−1−nH20−+MOn+2n
ftO1i Jに補正する。
4 明細書 8頁16行目
「ターンメッキなされ、」とあるを
「ターンメッキがされ、JKm正する。
以上FIG. 1 is a side view of a substrate O illustrating the patterning process of the present invention. a...Untreated b...After oxide film formation c-...Photosensitive resist) After 1m cloth d...
・Ultraviolet exposure -... After development f... After oxide film etching! ...After resist etching... Shows after electroless plating 1 ... Insulating substrate 2 ... Oxidized film 3 ... Light Photosensitive resist F coating 4...Metal coating 5...7 Otomask diagram-1 Procedural amendment (voluntary) February 3, 1980 To the Commissioner of the Japan Patent Office 1, Indication of the case 1988 patent Application No. 183480 3. Person making the amendment 6. Written amendment to the procedure to be amended (voluntary) 1. Specification, page 4, line 1, stop "Solution (actipating) vcl'%47? and sensitizer" Correct to [ail [K immersion (actipating) sensitizer]. l Specification Lines 6, 9th to 61f-12 ``The upper coating layer can be obtained by appropriately mixing these alkoxides.・These alkoxides are mixed appropriately.'' 4.These alkoxides" should be changed to "obtained by appropriately mixing alkoxides.These alkoxides." Specification Page 7, line 1 [M(OR)n-17H20-+MOn4 RRO)i
↑” A certain meeting r M(0R)ln-1-nH20-+MOn+2n
Correct to ftO1i J. 4. In the specification, page 8, line 16, change the phrase "Turn plated," to "Turn plated, JKm."
Claims (1)
1等の酸化物被膜をy#成し、 (荀 光感光性レジストを塗布して、 (1) 紫外線露光により、目的の形状にパターニン
グを行い、 0) 不必要部O酸化物被膜をエツチングした後、(6
) レジスジを剥離し、 (Is)8nO1諺−paoz鵞混合前混合前処理液処
理あルイは、a!Lal、@溶液浸漬後PdOtm榛波
で浸漬処理し、 (至)酸あるいはアルカリ溶液にPb、Mn、Zn、
a a 、 A@ 、 mb I ) tカラIHfレ
タ一種又1ri二種以上の金属を溶解し、その溶液中に
上記基板を浸し、 −) 無電解メッキ液に入れて金属被覆する工程を有す
る絶縁体上へのパターンメッキ製造方法。(1) II on the insulator! l O@ or In, 0
A 1st grade oxide film was formed, (1) a photosensitive resist was applied, (1) it was patterned into the desired shape by UV exposure, and (0) the unnecessary part O oxide film was etched. After (6
) Peel off the resist line, (Is) 8nO1 proverb-paozuren mixing pre-mixing pre-treatment liquid treatment, a! Lal, @ After immersion in solution, immersion treatment in PdOtm Shinnami, (to) acid or alkaline solution with Pb, Mn, Zn,
aa, A@, mb I) Insulation that has the process of dissolving one or more metals, immersing the substrate in the solution, -) placing it in an electroless plating solution and coating it with metal. A method for manufacturing pattern plating on the body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56183480A JPS5884964A (en) | 1981-11-16 | 1981-11-16 | Production of pattern plating on insulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56183480A JPS5884964A (en) | 1981-11-16 | 1981-11-16 | Production of pattern plating on insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5884964A true JPS5884964A (en) | 1983-05-21 |
JPH026833B2 JPH026833B2 (en) | 1990-02-14 |
Family
ID=16136540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56183480A Granted JPS5884964A (en) | 1981-11-16 | 1981-11-16 | Production of pattern plating on insulator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5884964A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119111A (en) * | 1981-12-31 | 1983-07-15 | エヌ ベー フイリップス フルーイランペンフアブリケン | Method of metallizing partly electrically conductive nonmetallic pattern |
JPS59147430A (en) * | 1983-02-10 | 1984-08-23 | Oki Electric Ind Co Ltd | Formation of fine pattern |
JPH02104671A (en) * | 1988-10-11 | 1990-04-17 | C Uyemura & Co Ltd | Palladium activator and method for electroless-plating ceramic substrate |
JPH02240271A (en) * | 1989-03-14 | 1990-09-25 | C Uyemura & Co Ltd | Palladium activator and electroless plating method |
JPH05239660A (en) * | 1991-10-15 | 1993-09-17 | Enthone Omi Inc | Method for electrodepositing metal plating directly on plastic substrate |
JPH05241721A (en) * | 1992-02-27 | 1993-09-21 | Totoku Electric Co Ltd | Transparent digitizer sensor plate |
-
1981
- 1981-11-16 JP JP56183480A patent/JPS5884964A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119111A (en) * | 1981-12-31 | 1983-07-15 | エヌ ベー フイリップス フルーイランペンフアブリケン | Method of metallizing partly electrically conductive nonmetallic pattern |
JPH0340452B2 (en) * | 1981-12-31 | 1991-06-19 | ||
JPS59147430A (en) * | 1983-02-10 | 1984-08-23 | Oki Electric Ind Co Ltd | Formation of fine pattern |
JPH02104671A (en) * | 1988-10-11 | 1990-04-17 | C Uyemura & Co Ltd | Palladium activator and method for electroless-plating ceramic substrate |
JPH02240271A (en) * | 1989-03-14 | 1990-09-25 | C Uyemura & Co Ltd | Palladium activator and electroless plating method |
JPH05239660A (en) * | 1991-10-15 | 1993-09-17 | Enthone Omi Inc | Method for electrodepositing metal plating directly on plastic substrate |
JPH05241721A (en) * | 1992-02-27 | 1993-09-21 | Totoku Electric Co Ltd | Transparent digitizer sensor plate |
Also Published As
Publication number | Publication date |
---|---|
JPH026833B2 (en) | 1990-02-14 |
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