JPS5879794A - Hybrid integrated circuit board - Google Patents

Hybrid integrated circuit board

Info

Publication number
JPS5879794A
JPS5879794A JP17781181A JP17781181A JPS5879794A JP S5879794 A JPS5879794 A JP S5879794A JP 17781181 A JP17781181 A JP 17781181A JP 17781181 A JP17781181 A JP 17781181A JP S5879794 A JPS5879794 A JP S5879794A
Authority
JP
Japan
Prior art keywords
hybrid integrated
circuit board
integrated circuit
film
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17781181A
Other languages
Japanese (ja)
Inventor
準市 岡元
和之 嶋田
石田 富雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17781181A priority Critical patent/JPS5879794A/en
Publication of JPS5879794A publication Critical patent/JPS5879794A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は混成集積回路、特に放熱効果を必要とする混成
集積回路板に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to hybrid integrated circuits, and particularly to hybrid integrated circuit boards that require heat dissipation effects.

従来の混成集積回路は、セラミック板あるいはガラス板
などの絶縁基板上に、抵抗器、コンデンサー等の受動回
路素子やトランジスター等の能動回路素子を適宜付着し
て形成されていた。
Conventional hybrid integrated circuits are formed by appropriately attaching passive circuit elements such as resistors and capacitors and active circuit elements such as transistors to an insulating substrate such as a ceramic plate or a glass plate.

しかし上記構成においては基板がセラミック、ガラス等
の絶縁物であるため熱放散が悪く、特に大電力用として
設計された抵抗器やトランジスターを組み込んだ場合、
これらの抵抗、トランジスターの発熱が著るしいため、
その熱によってコンデンサーなどの周辺部品のみならず
前記の抵抗器やトランジスター自体も破壊されてしまう
危険性があり、また破壊に至らないまでもそれらの電気
的特性を大きく変化させてしまうことが多い。
However, in the above configuration, since the substrate is an insulating material such as ceramic or glass, heat dissipation is poor, especially when incorporating resistors or transistors designed for high power use.
These resistors and transistors generate significant heat, so
There is a risk that the heat will destroy not only peripheral parts such as capacitors, but also the resistors and transistors themselves, and even if it does not result in destruction, it often significantly changes their electrical characteristics.

また、熱放散を効果的にするため、アルミニウムの金層
板を用い、アルミニウム板の全面に陽極酸化処理を施し
、酸化アルミニウム皮膜を形成させ、絶縁基板として用
いられたものもある。しかしこの場合、酸化アルミニウ
ム皮膜が熱に対して非常に弱く120℃程度で皮膜割れ
を起こし、110℃の温度差においても皮膜割れが生ず
るために、その電気絶縁性の如何が大きな問題となる。
In addition, in order to make heat dissipation more effective, there is a method in which a gold layered aluminum plate is used, and the entire surface of the aluminum plate is anodized to form an aluminum oxide film, which is used as an insulating substrate. However, in this case, the aluminum oxide film is very sensitive to heat and cracks at about 120°C, and cracks occur even at a temperature difference of 110°C, so the electrical insulation properties are a major problem.

この電気絶縁性を向上させる対策として、酸化アルミニ
ウム皮膜上に樹脂をコーティングしたものもあるが樹脂
層によって熱放散が悪化するという欠点がある。またア
ルミニウム板の一生面に直接的に樹脂層を設けた絶縁基
板も用いられているが、樹脂層のピンホールの問題と電
気絶縁性の問題とから、その樹脂層は厚くなシ熱放散が
非常に悪くなる結果となっている。このように大電力を
消費して発熱の大きい回路素子を組み込まなければなら
ない混成集積回路の回路板としては不適当であシ欠点が
多いものである。
As a measure to improve this electrical insulation, some have coated the aluminum oxide film with a resin, but this has the disadvantage that the resin layer deteriorates heat dissipation. Insulating substrates are also used in which a resin layer is directly provided on the whole surface of an aluminum plate, but due to problems with pinholes in the resin layer and electrical insulation, the resin layer is thick and difficult to dissipate heat. The result is very bad. As described above, it is unsuitable for use as a circuit board for a hybrid integrated circuit in which circuit elements that consume large amounts of power and generate large amounts of heat must be incorporated, and they have many drawbacks.

本発明は上述した欠点に対して抵抗器やトランジスター
から発生する熱を効果的に放熱し、電気絶縁性の良好な
、かつ構造が簡単で量産性のある混成集積回路板を提供
するものである。
The present invention solves the above-mentioned drawbacks by providing a hybrid integrated circuit board that effectively dissipates heat generated from resistors and transistors, has good electrical insulation, has a simple structure, and can be mass-produced. .

本発明の混成集積回路板の構成は、アルミニウム板1の
少なくとも一生面に酸化アルミニウム水利物2の皮膜を
形成させ(いわゆるベーマイト処理)、さらにシリコン
樹脂と溶剤からなるフェノに酸化けい素を安定に分散さ
せた処理剤を酸化アルミニウム水利物2の皮膜上に形成
させる(いわゆるダウコーニング社方式のペスタ処理剤
におけるベスタ処理)。次に導電体物質を選択的に付着
形成して導電体4,5および抵抗器6,7などの回路素
子を複数個形成してなるものである。
The structure of the hybrid integrated circuit board of the present invention is to form a film of aluminum oxide aqueduct 2 on at least the entire surface of an aluminum plate 1 (so-called boehmite treatment), and to stably apply silicon oxide to a phenol made of silicone resin and a solvent. The dispersed treatment agent is formed on the film of the aluminum oxide aquarium 2 (so-called Vesta treatment in the Dow Corning type Pesta treatment agent). Next, a conductive material is selectively deposited to form a plurality of circuit elements such as conductors 4 and 5 and resistors 6 and 7.

このように構成した本発明の混成集積回路板はアルミニ
ウム板1の表面に酸化アルミニウム水和。
The hybrid integrated circuit board of the present invention constructed in this manner has aluminum oxide hydrated on the surface of the aluminum plate 1.

物2の皮膜を形成させているため耐久性、耐食性、耐薬
品性が優れ、かつ電気絶縁性も良好で、陽極酸化法の酸
化アルミニウムに比べ、薬品や多量の電気を必要としな
いため省資源、省エネルギー化を図ることができ公害の
問題がなく経済性も良好であり処理時間も短く生産性向
上となる(陽極酸化法20〜40分の時間を要するのに
対して5〜10分で充分である)。また塗装下地として
強い密着性が得られるもので、ペスタ処理をアルミニウ
ム表面へ直接的に行なった場合に比べて、酸化アルミニ
ウム水和物皮膜2を介して行なった場合の方が、よシ強
固であり信頼性のものが得られる。
Because it forms a film of substance 2, it has excellent durability, corrosion resistance, and chemical resistance, and also has good electrical insulation properties. Compared to aluminum oxide produced by anodizing, it does not require chemicals or large amounts of electricity, so it is resource-saving. , it can save energy, has no pollution problems, is economical, and has a short processing time, improving productivity (5 to 10 minutes is enough compared to the 20 to 40 minutes required for anodizing). ). It also provides strong adhesion as a paint base, and compared to when PESTA treatment is applied directly to the aluminum surface, it is much stronger when applied through the aluminum oxide hydrate film 2. Yes, you can get something reliable.

さらに、酸化アルミニウム水和物皮膜上に、シリコン樹
脂と溶剤からなる〜ワニスに酸化けい素を安定に分散さ
せたペスタ処理剤を塗布形成させているため、耐熱性が
非常に良好で、従来用いられている酸化アルミニウム皮
膜のみのものが、約120℃の加熱によって皮膜割れを
生じるのに対し、350℃で10分間加熱しても皮膜割
れの発生がない。耐熱衝撃性も極めて大きく、酸化アル
ミニウム皮膜のみの場合では約110℃の温度差で皮膜
割れを生じるが、300℃で10分間加熱した後、ただ
ちに20℃の水に浸漬しても皮膜割れの発生がない。ま
たアルミニウム表面にベーマイト皮膜を形成させた後ペ
スタ処理しているのでピンホールもほとんど認められず
、極めて大きな耐食性を示す。また沸騰水中に約500
時間浸漬しても黒変化等の発生がない。
Furthermore, because a PESTA treatment agent consisting of a silicone resin and a solvent, in which silicon oxide is stably dispersed in a varnish, is applied onto the aluminum oxide hydrate film, it has very good heat resistance. Whereas the aluminum oxide film shown above cracks when heated to about 120°C, no cracking occurs even after heating at 350°C for 10 minutes. Thermal shock resistance is also extremely high; in the case of an aluminum oxide film alone, a temperature difference of approximately 110°C will cause the film to crack, but even after heating at 300°C for 10 minutes, the film will crack immediately after being immersed in water at 20°C. There is no. Furthermore, since a boehmite film is formed on the aluminum surface and then PESTA treated, there are almost no pinholes and it exhibits extremely high corrosion resistance. Approximately 500% in boiling water
No blackening occurs even after long immersion.

また、ペスタ処理による皮膜はディップ法で塗布した場
合、1回の処理で4〜6μmの皮膜厚を得ることができ
る。このように皮膜厚を薄く形成でき、ピンホールの発
生もないことと、酸化アルミニウム水和物皮膜そのもの
も沸騰水中処理時間を自由に制御することができるため
、極く薄い皮膜として、たとえば1μmとして得られる
ので抵抗器やトランジスター自体からの発熱は、各皮膜
を介してすみやかにアルミニウム板に伝わシ、外気に放
散することができる。
Further, when a coating formed by Pesta treatment is applied by a dip method, a coating thickness of 4 to 6 μm can be obtained in one treatment. In this way, the film can be formed thinly, without the occurrence of pinholes, and the aluminum oxide hydrate film itself can be treated in boiling water by freely controlling its treatment time. As a result, heat generated from the resistor or transistor itself can be quickly transmitted to the aluminum plate through each film and dissipated to the outside air.

このように本発明の混成集積回路板はアルミニウム板の
一生面に、ベーマイト処理さらにペスタ処理を行ない皮
膜を得た後皮膜上に回路素子を付着形成したものであり
、この構造は極めて簡単であり、しかも均一な厚みで容
易に、かつ薄く形成することができる。また二重皮膜の
ため電気絶縁性も非常に良好となシ、抵抗器、トランジ
スターからの発熱は迅速にアルミニウム板に伝わり、ア
ルミニウム板から外気に放散することができ、大電力用
として設計された混成集積回路の回路板として使用する
ことができる。
In this way, the hybrid integrated circuit board of the present invention is made by subjecting the entire surface of an aluminum plate to boehmite treatment and Pesta treatment to obtain a film, and then forming circuit elements on the film, and this structure is extremely simple. Moreover, it can be easily and thinly formed with a uniform thickness. In addition, due to the double film, the electrical insulation properties are very good.The heat generated from the resistor and transistor is quickly transmitted to the aluminum plate, and can be dissipated from the aluminum plate to the outside air.It is designed for high power use. It can be used as a circuit board for hybrid integrated circuits.

以下本発明の実施例について説明する。Examples of the present invention will be described below.

(実施例) アルミニウム板lは厚さ2.Omm長さ6.Ocm、幅
40儒の板を用い、脱脂−エツチング−中和の処理を施
した。脱脂は3%アルカリ脱脂剤溶液にて温度70±5
℃で5±1分間行なった。その後水洗し、エツチングし
た。エツチングは6チカセイソーダを使用し温度50〜
55℃で6分間行なった。その後十分に水洗し中和した
。中和はI Oチ硝酸を用い室温にて1〜2分間行なっ
た後水洗した。このようにしてアルミニウムの素材を得
たのち、純水(脱イオン水)にて十分に水洗し、沸騰水
(脱イオン水、1060m以上、温度90℃以上時間3
分間)中に放置し、アルミニウム板両面に酸化アルミニ
ウム水和物皮膜2(約1μm厚さ)を形成した。次に、
ダウコーニング社のベスタ処理剤を用い、ディアゾ法に
て塗布、150℃、30分間で硬化させ、ベスタ処理に
よる皮膜(厚さ約5μm)3を形成した。
(Example) The aluminum plate l has a thickness of 2. Omm length 6. A board with a width of 40 mm and a width of 40 mm was used and subjected to degreasing, etching, and neutralization. Degreasing is done with a 3% alkaline degreaser solution at a temperature of 70±5.
It was carried out for 5±1 minutes at ℃. After that, it was washed with water and etched. For etching, use 6-thick soda at a temperature of 50~
The test was carried out at 55°C for 6 minutes. Thereafter, it was thoroughly washed with water and neutralized. Neutralization was carried out using IO nitric acid at room temperature for 1 to 2 minutes, followed by washing with water. After obtaining the aluminum material in this way, it is thoroughly washed with pure water (deionized water) and boiled water (deionized water, over 1060 m, at a temperature of over 90°C for 3 hours.
The aluminum oxide hydrate film 2 (about 1 μm thick) was formed on both surfaces of the aluminum plate. next,
Using Dow Corning's Vesta treatment agent, it was applied by the Diazo method and cured at 150° C. for 30 minutes to form a Vesta treatment film (about 5 μm thick) 3.

その後、導電体4,5を所定の・母ターンに蒸着法で形
成(導電体材料はニッケル系を使用)し、導電体のトラ
ンジスター固着部に銅ヒートシンク8を固定し、トラン
ジスターを取シ付け、またコンデンサーや抵抗器6,7
等の周辺部品を取り付けて混成集積回路板を得ることが
できた。なお、導電体形成方法として、ペスタ処理剤を
塗布し、硬化させる前に、銅箔等をラミネートしてから
硬化させ、次いで銅箔を所定のパターンにエツチングし
、そしてニッケルメッキ等を施しても本発明の混成集積
回路板は得られるものである。
After that, conductors 4 and 5 are formed on predetermined main turns by vapor deposition (nickel-based conductor material is used), a copper heat sink 8 is fixed to the transistor fixing part of the conductor, and the transistor is mounted. Also, capacitors and resistors 6, 7
By attaching peripheral parts such as, a hybrid integrated circuit board could be obtained. In addition, as a method of forming a conductor, before applying the PESTA treatment agent and curing it, it is also possible to laminate a copper foil, etc., and then harden it, then etch the copper foil into a predetermined pattern, and then apply nickel plating, etc. A hybrid integrated circuit board of the present invention is obtained.

第3図に、本発明による混成集積回路板の放熱特性を示
した。
FIG. 3 shows the heat dissipation characteristics of the hybrid integrated circuit board according to the present invention.

Aは紙フエノール板、Bはガラスエポキシ板、Cはセラ
ミック板、Dは従来のアルミニウム板、Eは本発明の混
成集積回路板である。
A is a paper phenol board, B is a glass epoxy board, C is a ceramic board, D is a conventional aluminum board, and E is a hybrid integrated circuit board of the present invention.

以上のように本発明の混成集積回路板は、抵抗器やトラ
ンジスターから発生する熱を効果的に放熱し、電気絶縁
性の良好な、かつ構造が簡単で、量産性にも優れ、実用
的価値のあるものである。
As described above, the hybrid integrated circuit board of the present invention effectively radiates heat generated from resistors and transistors, has good electrical insulation, has a simple structure, is easy to mass produce, and has practical value. It is something that has.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図は本発明実施例に用いた混成集積回路板
を示す図で第1図は平面図、第2図は断面図である。第
3図は各種基板の放熱特性を示した図である。 1・・・アルミニウム板、2・・・酸化アルミニウム水
和物、3・・・ベスタ処理による皮膜、4,5・・・導
電体、6.7・・・抵抗器、8・・・ヒートシンク。 
 1第1図 へ 第2図 第3図 0.5    1.0    1.5    2.0痛
棄電力 (W)
1 and 2 are diagrams showing a hybrid integrated circuit board used in an embodiment of the present invention, with FIG. 1 being a plan view and FIG. 2 being a sectional view. FIG. 3 is a diagram showing the heat dissipation characteristics of various substrates. DESCRIPTION OF SYMBOLS 1... Aluminum plate, 2... Aluminum oxide hydrate, 3... Film by Besta treatment, 4, 5... Conductor, 6.7... Resistor, 8... Heat sink.
1 To Figure 1 Figure 2 Figure 3 0.5 1.0 1.5 2.0 Discharge power (W)

Claims (1)

【特許請求の範囲】[Claims] シリコン樹脂と溶剤からなるフェスに酸化けい素を安定
に分散させた処理剤を、アルミニウム板の少なくとも一
生面を沸騰水中に放置して酸化アルミニウム水和物を形
成させた皮膜上に塗布硬化せしめて絶縁皮膜を形成し、
該絶縁皮膜上に導電体物質を選択的に付着形成したのち
複数個の回路素子を実装させることを特徴とする混成集
積回路板0
A treatment agent in which silicon oxide is stably dispersed in a face made of silicone resin and a solvent is applied and cured on the film formed by leaving aluminum oxide hydrate on the surface of the aluminum plate by leaving it in boiling water for at least a lifetime. Forms an insulating film,
A hybrid integrated circuit board 0 characterized in that a plurality of circuit elements are mounted after selectively depositing a conductive material on the insulating film.
JP17781181A 1981-11-07 1981-11-07 Hybrid integrated circuit board Pending JPS5879794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17781181A JPS5879794A (en) 1981-11-07 1981-11-07 Hybrid integrated circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17781181A JPS5879794A (en) 1981-11-07 1981-11-07 Hybrid integrated circuit board

Publications (1)

Publication Number Publication Date
JPS5879794A true JPS5879794A (en) 1983-05-13

Family

ID=16037497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17781181A Pending JPS5879794A (en) 1981-11-07 1981-11-07 Hybrid integrated circuit board

Country Status (1)

Country Link
JP (1) JPS5879794A (en)

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