JPS587832A - Device for electrochemical treatment - Google Patents

Device for electrochemical treatment

Info

Publication number
JPS587832A
JPS587832A JP10440981A JP10440981A JPS587832A JP S587832 A JPS587832 A JP S587832A JP 10440981 A JP10440981 A JP 10440981A JP 10440981 A JP10440981 A JP 10440981A JP S587832 A JPS587832 A JP S587832A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor wafer
wafers
electrochemical treatment
electrochemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10440981A
Other languages
Japanese (ja)
Inventor
Hiroshi Kamidoi
上土居　博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10440981A priority Critical patent/JPS587832A/en
Publication of JPS587832A publication Critical patent/JPS587832A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a device to so perform an electrochemical treatment that the treatment is not spread onto the back surfaces of wafers, by retaining wafers on both sides of an electrode in the same shape as the semiconductor wafer. CONSTITUTION:One piece of wafers 9 is respectively retained on the both sides of the electrode 7 in the same shape as the semiconductor wafer 9 and soaked in the electrochemical treatment solution 6a. This retention is preformed with a clip 10. The electrode 7 is formed with a protecting film on a part in no contact with the wafer and on a part in contact with the treatment solution, thus preventing the runaway with electrodeposits. The electrode 8 is reverse to the electrode 7 in the polarity and provided in two pieces so as to be opposed to the main surfaces 9a of the wafers. Thus, the inhomogeneity of electrodeposit amounts due to the difference of element structures and protecting films and the spreading into the back surfaces can be prevented.

Description

【発明の詳細な説明】 本発明は半導体製造装置に関し、特に電気化学処理装置
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and more particularly to electrochemical processing equipment.

従来より、半導体ウェハ上に保護膜または絶縁膜を形成
する場合の電気化学処理として電着法が広く採用されて
いる。そして、この電着法では、第１図に示すように半
導体ウェハ１を電極クリップ２で把持させ、該電極クリ
ップ２を電気化学処理液即ち電着液３中に浸漬し、該半
導体ウニノ・１と他に設けた電極４との間に電界を生起
せしめることにより半導体ウニノ・１上に保護膜または
ｅ’を膜を形成させている。しかしながら、該方法では
電極クリップ２が素子側の面までを把持するため、素子
構造または素子側の保護膜等の違いにより半導体ウェハ
と電極クリップとの接触抵抗が変化し、電着量にバラツ
キが生じる。また、該方法では半導体ウェハの裏面への
回込みが問題となる。Conventionally, electrodeposition has been widely employed as an electrochemical treatment for forming a protective film or an insulating film on a semiconductor wafer. In this electrodeposition method, as shown in FIG. A protective film or film e' is formed on the semiconductor unit 1 by generating an electric field between the electrode 4 and the electrode 4 provided elsewhere. However, in this method, since the electrode clip 2 grips the surface on the element side, the contact resistance between the semiconductor wafer and the electrode clip changes due to differences in the element structure or the protective film on the element side, resulting in variations in the amount of electrodeposition. arise. Further, in this method, there is a problem in that the particles run around to the back surface of the semiconductor wafer.

一方、他の電着法として、第２図に示すように、半導体
ウニ・パ１を保持具５に真空吸引にてｅ、着させ半導体
ウニノ・１上に保護膜または絶縁膜を形成することも行
なわれているが、この方法では、半導体ウニノ・の保持
にバキュームを使用するためノ（キューム配管系が必要
となり装置がコスト高となる。On the other hand, as another electrodeposition method, as shown in FIG. 2, a protective film or an insulating film is formed on the semiconductor film 1 by depositing the semiconductor film 1 on the holder 5 by vacuum suction. However, this method uses a vacuum to hold the semiconductor, requiring a vacuum piping system, which increases the cost of the device.

本発明はかかる点に鑑みてなされたものであり、電気化
学処理液に−の電極により保持される半導体ウェハを浸
漬し、該半導体ウニノ・と他の電極との間に電界を生起
せしめ前記半導体ウニノ・上に電気化学処理を施すよう
にした電気化学処理装置において、前記−の電極を前記
半導体ウェハと同一形状のものとすると共に該電極の両
面それぞれに前記半導体ウェハな保持させるようにした
ことを特徴とする電気化学処理装置を提供するものであ
る。The present invention has been made in view of this point, and involves immersing a semiconductor wafer held by a negative electrode in an electrochemical treatment solution, and generating an electric field between the semiconductor wafer and the other electrode. In an electrochemical processing apparatus for performing electrochemical treatment on a surface of a sea urchin, the minus electrode has the same shape as the semiconductor wafer, and the semiconductor wafer is held on each of both sides of the electrode. The present invention provides an electrochemical processing device characterized by:

以下、本発明の詳細を図面に示す実施例に基づいて説明
する。Hereinafter, details of the present invention will be explained based on embodiments shown in the drawings.

本発明に係る電気化学処理装置は、電気化学処理液槽６
、−の電極７および他の電極８を備えて成る（第３図（
ａ））。The electrochemical processing device according to the present invention includes an electrochemical processing liquid tank 6
, - electrode 7 and another electrode 8 (Fig. 3(
a)).

電気化学処理液槽６は、半導体ウェハ９の電気化学処理
液（電着処理液）６ａ、例えばガラス粉末を含むイソプ
ロピルアルコール（微少の電界質を含有）等を貯留して
いる。電極７は半導体ウェハ９と同一形状に形成され（
第３図（ｂ）　）　、その両面それぞれに各々１枚ずつ
の半導体ウェハ９を保持している。この保持は、クリッ
プ１０に、て行なわれる。また、電極７は、半導体ウェ
ハ９に接しない部分で且つ電着処理液６ａに浸漬される
部分が保護膜で核種され、該電極Ｔによる！着物の持ち
逃げを防いでいる。電極８は上記電極７と反対の極性（
通常はプラス）を有するもので、ここでは半導体ウェハ
９．９の主表面９ａ、９ａに対峙するよう２個設けであ
る。The electrochemical processing liquid tank 6 stores an electrochemical processing liquid (electrodeposition processing liquid) 6a for the semiconductor wafer 9, such as isopropyl alcohol containing glass powder (containing a small amount of electrolyte). The electrode 7 is formed in the same shape as the semiconductor wafer 9 (
(FIG. 3(b)), one semiconductor wafer 9 is held on each of its both sides. This holding is performed by the clip 10. Further, the portion of the electrode 7 that is not in contact with the semiconductor wafer 9 and that is immersed in the electrodeposition treatment liquid 6a is covered with a protective film, and the portion of the electrode 7 that is not in contact with the semiconductor wafer 9 is covered with a protective film. This prevents kimonos from being stolen. The electrode 8 has a polarity opposite to that of the electrode 7 (
Here, two are provided so as to face main surfaces 9a, 9a of semiconductor wafer 9.9.

而して、上記電気化学処理装置では、電極Ｔに保持され
た半導体ウニノ・９と電極８とに電界を生起せしめるこ
とにより半導体ウニノ・９に保護膜または絶縁膜を形成
する。In the electrochemical processing apparatus described above, an electric field is generated between the semiconductor unit 9 held by the electrode T and the electrode 8, thereby forming a protective film or an insulating film on the semiconductor unit 9.

第４図は上記電気化学装置の応用例を示したもので、電
極Ｔおよび電極８を交互に並設せしめたものである。こ
こで、１１はクリップである。FIG. 4 shows an application example of the electrochemical device described above, in which electrodes T and electrodes 8 are arranged alternately in parallel. Here, 11 is a clip.

以上のように・・本発明によれば、−の電極の両面それ
ぞれに半導体ウニノ・を保持させ、該半導体ウェハと他
の電極との間に電界を生起せしめることにより前記半導
体ウニノ・上に電気化学処理を施すので、素子構造また
は菓子側の保護膜等の違いによる電着量のバラツキが解
消される。また、半導体ウェハの保持にバキュームを必
要としないので、　　　□特別なバキューム配管系を必
要とせず装置のコストも割安である。さらに半導体ウニ
ノ・の裏面が−の電極と密着されるので半導体ウェハ裏
面への回込みも解消される。As described above, according to the present invention, a semiconductor wafer is held on each of both sides of the negative electrode, and an electric field is generated between the semiconductor wafer and the other electrode, so that an electric field is generated on the semiconductor wafer. Since chemical treatment is performed, variations in the amount of electrodeposition due to differences in the element structure or the protective film on the confectionery side are eliminated. In addition, since no vacuum is required to hold the semiconductor wafer, □No special vacuum piping system is required and the cost of the device is low. Furthermore, since the back surface of the semiconductor wafer is in close contact with the negative electrode, the possibility of the semiconductor wafer running over to the back surface is eliminated.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図および第２図は従来の電気化学処理装置の説明図
、第３図（ａ）、（ｂ）は本発明に係る電気化学処理装
置の説明図、第４図は第３図の装置の応用例の説明図で
ある。 ６ａ・・・電気化学処理液 ７・・・・・・−の電極 ８・・・・・・他の電極 ９・・・・・・半導体ウェハ。 （７３１７）代理人　弁理士　　則　近　憲　佑（ほか
１名） 第　２　図1 and 2 are explanatory diagrams of a conventional electrochemical processing apparatus, FIGS. 3(a) and (b) are explanatory diagrams of an electrochemical processing apparatus according to the present invention, and FIG. 4 is an explanatory diagram of the apparatus shown in FIG. 3. FIG. 2 is an explanatory diagram of an application example. 6a... Electrochemical processing liquid 7... Electrode 8... Other electrode 9... Semiconductor wafer. (7317) Agent Patent attorney Noriyuki Chika (and 1 other person) Figure 2

Claims (1)

【特許請求の範囲】[Claims] 電気化学処理液に、−の電極により保持される半導体ウ
ェハを浸漬し、該半導体ウェハと他の電極との間に電界
を生起せしめ前記半導体ウニノ・上に電気化学処理を施
すようにした電気化学処理装置において、前記−の電極
を前記半導体ウニノ・と同一形状のものとすると共に該
電極の両面それぞれに前記半導体ウェハを保持させるよ
うにしたことを特徴とする電気化学処理装置。A semiconductor wafer held by a negative electrode is immersed in an electrochemical treatment solution, and an electric field is generated between the semiconductor wafer and another electrode to perform electrochemical treatment on the semiconductor. An electrochemical processing apparatus characterized in that the - electrode has the same shape as the semiconductor wafer, and the semiconductor wafer is held on each of both sides of the electrode.
JP10440981A 1981-07-06 1981-07-06 Device for electrochemical treatment Pending JPS587832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10440981A JPS587832A (en) 1981-07-06 1981-07-06 Device for electrochemical treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10440981A JPS587832A (en) 1981-07-06 1981-07-06 Device for electrochemical treatment

Publications (1)

Publication Number Publication Date
JPS587832A true JPS587832A (en) 1983-01-17

Family

ID=14379909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10440981A Pending JPS587832A (en) 1981-07-06 1981-07-06 Device for electrochemical treatment

Country Status (1)

Country Link
JP (1) JPS587832A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163483U (en) * 1984-09-30 1986-04-30
JPS6163484U (en) * 1984-09-30 1986-04-30
JPS6163485U (en) * 1984-09-30 1986-04-30
JPS61105770U (en) * 1984-12-17 1986-07-04

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163483U (en) * 1984-09-30 1986-04-30
JPS6163484U (en) * 1984-09-30 1986-04-30
JPS6163485U (en) * 1984-09-30 1986-04-30
JPS61105770U (en) * 1984-12-17 1986-07-04

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