JPS5875743A - Pickup tube electron gun - Google Patents

Pickup tube electron gun

Info

Publication number
JPS5875743A
JPS5875743A JP17300481A JP17300481A JPS5875743A JP S5875743 A JPS5875743 A JP S5875743A JP 17300481 A JP17300481 A JP 17300481A JP 17300481 A JP17300481 A JP 17300481A JP S5875743 A JPS5875743 A JP S5875743A
Authority
JP
Japan
Prior art keywords
grating
cathode
grid
electron gun
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17300481A
Other languages
Japanese (ja)
Other versions
JPH0418418B2 (en
Inventor
Masanori Maruyama
丸山 優徳
Masakazu Fukushima
正和 福島
Shinichi Kato
真一 加藤
Chihaya Ogusu
小楠 千早
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Broadcasting Corp
Original Assignee
Hitachi Ltd
Nippon Hoso Kyokai NHK
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Hoso Kyokai NHK, Japan Broadcasting Corp filed Critical Hitachi Ltd
Priority to JP17300481A priority Critical patent/JPS5875743A/en
Priority to US06/437,335 priority patent/US4540916A/en
Priority to EP82110023A priority patent/EP0078523B1/en
Priority to KR8204883A priority patent/KR860000816B1/en
Priority to DE8282110023T priority patent/DE3272757D1/en
Publication of JPS5875743A publication Critical patent/JPS5875743A/en
Publication of JPH0418418B2 publication Critical patent/JPH0418418B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/488Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes

Landscapes

  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

PURPOSE:To improve durability and reliability of cathode as well as resolution of a pickup tube by forming a crossover point in a position of high potential on an axis. CONSTITUTION:A plate electrode 31 making the first grid is thickened while the depth l1 of a recess to be formed in the center of said plate electrode 31 is made not less than d1/2 to the inside diameter d1 of said recess. The deepened recess produces and effect of shielding an electric field caused by the second grid 4, a divergent lens is formed near the first grid opening 13, an electron beam 12 passing through the opening 13 once diverges then forms a crossover point 15 at a point away from the first grid opening 13. The rising of the potential V(2) (full line) on the axis near the electrode is gentle and the peak value (crossover point) of the current intensity J(2) (dotted line) on the axis is formed in a position more distant from cathode, wherein the potential on the axis is high, causing stronger control of the expansion of width of speed distribution of an electron group.

Description

【発明の詳細な説明】 本発明は、撮像管電子銃に係り、特に電子ビームを形成
する電子群の連層分布の拡大を小さく抑えた電子銃の電
極構成に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image pickup tube electron gun, and more particularly to an electrode structure for an electron gun that suppresses expansion of the layered distribution of electron groups forming an electron beam.

ビジコン形撮像管では、4tL写体照度に対応した電荷
パターンを光導電膜上に発生させ、電子銃で発生させた
電子ビームで光導電膜上を走査することにより、を荷パ
ターンを順次放電し、この放電に対応した充電電流を信
号として外部に取り出している。被写体により1度発生
した電荷は1通常は1回のビーム走査でその全音が放電
されること−はなく、この為に被写体がなくなっても1
次回以舜の走査において残留電荷に対応した偽信号が残
像として発生し、動く被写体の画質を劣化させる。
In a vidicon type image pickup tube, a charge pattern corresponding to 4tL object illuminance is generated on a photoconductive film, and the charge pattern is sequentially discharged by scanning the photoconductive film with an electron beam generated by an electron gun. The charging current corresponding to this discharge is taken out as a signal. The electric charge once generated by the object is not normally discharged in its entirety in one beam scan, so even if the object disappears, the electric charge will remain at 1.
In subsequent scans, a false signal corresponding to the residual charge is generated as an afterimage, deteriorating the image quality of a moving subject.

特に、阻止形光導電膜な使用した撮像管においでは、光
導電膜の有する靜電容童と、走査電子ビームの有するビ
ーム抵抗との積で定まる時定数を持つ残像が主体であり
、これは通常容量性残像と呼ばれる。ビーム抵抗は電子
ビームを形成する電子群の速度分布と等価であり、低残
1象を実現する電子ビームは、電子群の速度分布が狭い
ことが必要条件となる。
In particular, in an image pickup tube using a blocking photoconductive film, the main component is an afterimage with a time constant determined by the product of the photoconductive film's electromagnetic resistance and the beam resistance of the scanning electron beam. This is called capacitive afterimage. The beam resistance is equivalent to the velocity distribution of the electron group forming the electron beam, and for an electron beam to achieve a low residual one-dimensional state, it is necessary that the velocity distribution of the electron group be narrow.

陰極から放出された電子#はマックスウェル分布をした
速度分布をしているが、細いビームを形成する過程にお
いてビームの電流密度が上昇し。
Electrons emitted from the cathode have a Maxwellian velocity distribution, but in the process of forming a narrow beam, the current density of the beam increases.

電子相互のクーロンタに与えるエネルギ緩和現象により
速度分布が拡大されることが知られている。
It is known that the velocity distribution is expanded due to the energy relaxation phenomenon that electrons give to each other's coulombas.

この現象はベージュ効果と呼けれ、速度分布の拡大率は
、@上電流密度J (z)と軸上電位V (z)に対し
J (z) ”3/ V(z)   VCはぼ比例する
事が知られてjh”It’ いる。
This phenomenon is called the beige effect, and the expansion rate of the velocity distribution is approximately proportional to J (z) 3/ V (z) VC for the upper current density J (z) and the axial potential V (z). This is known.

このような低残1績を目的する電子銃では、できる限り
ビームの電流密度上昇を抑える必要があり。
In an electron gun that aims to achieve such a low residual output, it is necessary to suppress the increase in beam current density as much as possible.

陽極に対向する第1格子を陰極に対し正電位で動作させ
る2極形電子銃が提案されている。
A bipolar electron gun has been proposed in which the first grid facing the anode is operated at a positive potential with respect to the cathode.

理想的な低残像電子銃は、陰極から軸に平行に電子を放
出させ、電流密度の高いクロスオーバを形成しない、い
わゆるノー流ビームを有するものである。しかしながら
従来の2&形電子絖では高照度の被写体に対してもビー
ム不足を生じないようす に、ビーム電流線のダイ不ミ、クレンジを広くする必要
性からクロスオーバ形の構成となっており。
An ideal low-afterimage electron gun would have a so-called no-flow beam, in which electrons are emitted from the cathode parallel to the axis and no crossovers of high current density are formed. However, the conventional 2& type electronic beam has a crossover type configuration due to the need to widen the die size and cleanliness of the beam current line so as not to cause insufficient beam even for subjects with high illuminance.

しかもクロスオーバ点が第1格子に近い軸上電位の低い
位置に形成されるために、速度分布幅拡大の抑制が十分
ではなかった。
Furthermore, since the crossover point is formed at a position near the first grid where the axial potential is low, the expansion of the velocity distribution width is not sufficiently suppressed.

本発明は、従来の2億形電子銃を改善し、より低残像で
、しかも低い陰極負荷(陰他放出電流密L)でより大き
なビーム電流を発生せしめることができる電子銃を提供
することを目的とする。
The present invention aims to improve the conventional 200 million-type electron gun and provide an electron gun that can generate a larger beam current with less afterimage and a lower cathode load (cathode emission current density L). purpose.

本発明に係る2極形電子gにおいては、陰極に、 l・
1 対向して配置され陰極に対し正の電圧を印加した第1格
子の徽小開′O部近傍゛に発散電子レンズを形成し、こ
の発散レンズによって第l格子開口を通過した電子ビー
ムを1度発散させ、クロスオーツ(点を第1格子開口か
ら1I11れた軸上電位の高い位置に形成させることに
より、電子群の速度分布幅拡大 へより小さく抑え、同時に第2格子に設けられた微小開
口を通過するビーム電流を増大せしめるととを基本II
K埋としている0 以下1本発明を実施例を参照して詳細に説明するO wJ1図はビジコン形撮1砿管の概略構成を示し。
In the dipole electron g according to the present invention, the cathode has l.
1. A diverging electron lens is formed in the vicinity of the small aperture O of the first grating, which is placed facing each other and a positive voltage is applied to the cathode. By forming cross oats (points) at high axial potential positions 1I11 from the first grid aperture, the velocity distribution width of the electron group can be further suppressed, and at the same time, the microscopic Basics II: Increasing the beam current passing through the aperture
The present invention will be described in detail with reference to embodiments below. Figure 1 shows the schematic structure of a vidicon type camera 1.

lは陰極、2はヒータ、3は第1格子、4は第2格子、
5は第3格子、6はメツシュ状電極な有する第4格子、
7は光導IIE験ターゲット、8は集束コイル、9は偏
向コイルであり、@極lから放出された電子ビーム10
はjR1格子3.第2格子4で構成される。電子銃で細
く成形され、集束コイル8で発生する磁界レンズにより
ターゲット抄上に結1家され、偏向コイル9で発生する
磁界により走査される。ここでは電磁集束・電両偏向形
熾I摩管を倒として示したが1本預明は隙他lから第2
格子4までの電子@部に係るものであり、以降のビーム
集束、偏向方式には関係なく、どのような方式の撮澹管
にでも適用、できる。
l is a cathode, 2 is a heater, 3 is a first grating, 4 is a second grating,
5 is a third lattice, 6 is a fourth lattice having mesh-like electrodes,
7 is a light guide IIE experimental target, 8 is a focusing coil, 9 is a deflection coil, and the electron beam 10 emitted from @ pole l
is jR1 lattice 3. It is composed of a second lattice 4. The electron beam is formed into a thin shape using an electron gun, is focused on the target by a magnetic field lens generated by a focusing coil 8, and is scanned by a magnetic field generated by a deflection coil 9. Here, the electromagnetic focusing/electrical deflection type laser tube is shown as upside down, but the first light is the second one from the gap and the other.
This relates to the electron section up to grating 4, and can be applied to any type of imaging tube, regardless of the subsequent beam focusing and deflection methods.

第2図は従来の2億形電子銃の1!部を示す拡大断面図
であり、 III′i陰極面、3は第1格子、13はM
l格子に設けられた微小開口、4は第2格子。
Figure 2 shows 1 of the conventional 200 million-type electron gun! 3 is an enlarged cross-sectional view showing the section III'i cathode surface, 3 is the first grating, and 13 is M
1 is a small aperture provided in the lattice; 4 is the second lattice;

14は第2格子4に設けられた微小開口、lOは陰極面
1の中心から放出された電子軌道を示す。
Reference numeral 14 indicates a minute opening provided in the second lattice 4, and lO indicates an electron trajectory emitted from the center of the cathode surface 1.

第1格子開口13を通過した電子ビームは開口を通過後
直ちに集束され、第1格子3に近い位置にクロスオーバ
15を形成する。
The electron beam passing through the first grating aperture 13 is focused immediately after passing through the aperture, and forms a crossover 15 at a position close to the first grating 3.

第3図及び第4図はそれぞれ不発明に係る2極形電子銃
の要部を示す拡大断面図である。第3図のメ施列では第
l格子3を構成する平板電極31の厚さを厚くシ、この
平板電極31の中心部に形成する凹部の内径d、に対し
その窪み深さtl を6172以上にする。錯みが深く
なることにより。
FIGS. 3 and 4 are enlarged sectional views showing essential parts of the bipolar electron gun according to the invention, respectively. In the mesh arrangement shown in FIG. 3, the thickness of the flat plate electrode 31 constituting the l-th lattice 3 is increased, and the depth tl of the concave portion formed at the center of the flat plate electrode 31 is set to 6172 or more with respect to the inner diameter d. Make it. By deepening the illusion.

第一2格子4により生じる電界を虜へいする効果が生じ
、第l格子開口1.3近傍に発散レンズが形成され、開
口13を通過する電子ビーム12は1度発散し、第1格
子−口13から離れた点にクロスオーバ15を形成する
The effect of confining the electric field generated by the first second grating 4 is generated, and a diverging lens is formed near the first grating aperture 1.3, so that the electron beam 12 passing through the aperture 13 diverges once, and A crossover 15 is formed at a point away from 13.

第4図に示した実施例では、第1格子3と第2格子4の
間に開口を有する中間格子20な設け、この中間格子2
0には第1格子3と等しいか、もしくはより低い電圧を
印加して、第l格子開口13近傍に発散レンズを形成し
ている。%に中間格子20の電位をls極lと同電位と
すれは、ステムリード巌を増すことがなく好適である。
In the embodiment shown in FIG. 4, an intermediate grating 20 having an opening is provided between the first grating 3 and the second grating 4, and
A voltage equal to or lower than that of the first grating 3 is applied to the first grating 3 to form a diverging lens in the vicinity of the first grating aperture 13 . It is preferable to set the potential of the intermediate grid 20 to the same potential as the ls pole 1 without increasing the stem lead width.

第5図と第6図は、陰極からの軸上距$2に対例の特性
は、軸上電位vtz)(実線で図示)の陰極近傍の立上
りがゆるやかであり、軸上電流密度J (Z) (点線
で図示)のピーク値(クロスオーバ点に相当する)は陰
極からより遠方の軸上電位が高い位置に形成されており
1、電子群の速度分布幅拡)□ 大の抑制がより強くなっている0 第7図は、第l格子3の電圧に!Jc1に対して、第2
格子開口14を通過するビーム電流iBと、@極中心点
の電流密度(陰極負荷> J’cとを第2図に示した従
来例と第4図に示した実施例とについて各々示したもの
である。
Figures 5 and 6 show that the axial potential vtz) (indicated by the solid line) rises slowly near the cathode, and the axial current density J ( The peak value (corresponding to the crossover point) of Z) (indicated by the dotted line) is formed at a position farther from the cathode where the axial potential is higher1, and the velocity distribution width of the electron group is expanded)□. 0 Figure 7 shows the voltage of the l-th grid 3 becoming stronger! For Jc1, the second
The beam current iB passing through the grating aperture 14 and the current density at the center point of the pole (cathode load >J'c) are shown for the conventional example shown in FIG. 2 and the embodiment shown in FIG. 4, respectively. It is.

ここで第4図に示した実施例の電極寸法について2つの
具体例を示す。具体例IFi第2格子開口14の直径が
30μm、具体例2は20μmであり、他の寸法は全く
同一である。第l格子3の板厚、第l格子開口13の直
径、陰極lと第1格子3の間隙は第2図の従来例と同一
であり、各々0.18mm、 200 tJm、0.1
5mmでおる。中容0.25mm、1.0mm、0.2
mm、0.2mmである。中間格子20の開口部の径と
、第1及び・第2格子3.4の凹部の内径はすべて0.
65mmである。
Here, two specific examples will be shown regarding the electrode dimensions of the embodiment shown in FIG. The diameter of the second grating opening 14 in the specific example IFi is 30 μm, and in the specific example 2, it is 20 μm, and the other dimensions are completely the same. The plate thickness of the l-th grating 3, the diameter of the l-th grating opening 13, and the gap between the cathode l and the first grating 3 are the same as in the conventional example shown in FIG. 2, and are respectively 0.18 mm, 200 tJm, and 0.1
It is 5mm. Contents: 0.25mm, 1.0mm, 0.2
mm, 0.2 mm. The diameter of the opening of the intermediate grating 20 and the inner diameter of the recess of the first and second gratings 3.4 are all 0.
It is 65mm.

各#L他への印加電圧は、陰極lはOv、第2格子4は
300合V、中間格子20は陰極と同一のOV、嘱1格
子3は第7図に示すごとく数v〜数10Vである。
The voltage applied to each #L and others is Ov for the cathode l, 300V for the second grid 4, the same OV as the cathode for the intermediate grid 20, and several volts to several tens of volts for the first grid 3 as shown in FIG. It is.

第7図において、実線で示される曲線71゜72及び7
3はそれぞれ1本発明に係る具体例1具体例2及び従来
例のビーム電流i、を示し1点線で示される曲4I74
及び75はそれぞれ本発明電子銃(具体例1及び具体例
2)及び従来例の陰極負荷ρ。を示すO第7図について
は1本発明に係る電子銃の特性を従来例と比較すると1
曲縁71.72と曲4173から明らかなように本発明
電子銃は、同一のE。1に対してビーム電流i、値が従
来例より大きく、シかもEc11c対するisの立上り
が従来例より急になっている0これは発散レンズ系を有
する本発明電子銃がより鋭いビーム集束をしていること
な示している〇一方陰極負荷ρについて比較すると(曲
@74及び75参照)。
In FIG. 7, curves 71, 72 and 7 are shown as solid lines.
3 indicates beam current i of specific example 1 specific example 2 according to the present invention and conventional example, respectively; music 4I74 indicated by a one-dot line;
and 75 are the cathode loads ρ of the electron guns of the present invention (concrete examples 1 and 2) and the conventional example, respectively. Regarding Figure 7, which shows the characteristics of the electron gun according to the present invention and the conventional example, 1
As is clear from the curved edges 71 and 72 and the curve 4173, the electron gun of the present invention has the same E. 1, the beam current i is larger than the conventional example, and the rise of is for Ec11c is steeper than the conventional example. On the other hand, if we compare the cathode load ρ (see songs @74 and 75).

本発明電子銃は同一のEcoに対しより低い値となって
おり、oh目d−Langmuirの式で与えられる理
論値にほぼ一致しており、ρC@cBC1の関係となっ
ている0これは1本発明電子銃でFi第1格子開口部の
近傍は電位変化がゆるやかであり。
The electron gun of the present invention has a lower value for the same Eco, which almost matches the theoretical value given by the ohth d-Langmuir equation, and the relationship is ρC@cBC10 This is 1 In the electron gun of the present invention, potential changes are gradual near the Fi first lattice opening.

第2格子の電位で形成される電界の効果が迩へいされて
いるためである。これに対し従来例では。
This is because the effect of the electric field formed by the potential of the second lattice is ignored. In contrast, in the conventional example.

41格子開口の近傍での電位変化が大きく、陰極中心部
には第2格子電位で形成される電界の効果により、より
強い電界が作用し負荷が上昇する〇待にE。1が小哨い
時にこの効果が顕著となり理論■直から大きくずれてし
まう。
41 The potential change near the lattice opening is large, and due to the effect of the electric field formed by the second lattice potential, a stronger electric field acts on the center of the cathode, increasing the load. This effect becomes noticeable when 1 is playing small guard, and it deviates greatly from the theory.

第1格子に正の電位を印加する2極形電子銃では、陰極
の寿命、信頼性が最も重要な点であるが。
In a bipolar electron gun that applies a positive potential to the first grid, the life and reliability of the cathode are the most important points.

本発明によれば、従来例に比べ、より低い陰極負荷でよ
り大きなビーム電流を発生することができ。
According to the present invention, a larger beam current can be generated with a lower cathode load than the conventional example.

上述した寿命信頼性の点から極めて有利となる〇又、上
記の具体例1.及び2から明らかなように1本発明電子
銃では第2格子開口14の径を小さくしてもビーム電流
iBの低下が少ないので。
It is extremely advantageous from the point of view of the above-mentioned life reliability. Also, the above-mentioned specific example 1. As is clear from 1 and 2, in the electron gun of the present invention, even if the diameter of the second grating aperture 14 is made small, the decrease in beam current iB is small.

従来例よりも小さな開口を使用することが可能となり、
!j&儂管の解1度向上に対しても有利となる。
It is now possible to use a smaller aperture than in conventional cases,
! It is also advantageous for improving the solution of j & me tube by 1 degree.

以上説明したごとく本発明によれば、クロスオーバ点を
軸上電位の高い位置に形成し電子群の連間分布拡大をよ
り抑えることができ、しかもより低い11j1極負荷で
大きなビーム電流を発生でき、陰極の寿命信頼性、撮像
管の解像度向上、残像の低減の点から極めて有利な電子
銃を実現できる。
As explained above, according to the present invention, it is possible to form the crossover point at a position where the axial potential is high, thereby further suppressing the expansion of the continuous distribution of electron groups, and furthermore, it is possible to generate a large beam current with a lower 11j single pole load. This makes it possible to realize an extremely advantageous electron gun in terms of cathode life reliability, improvement in image pickup tube resolution, and reduction in afterimages.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は撮像管の概略構成を示す図、第2′図は従来の
2極形電子銃の要部を示す拡大断面図、43図及び第4
図はそれぞれ本発明に係る2極形電子銃の要部を示す拡
大断面図、第5図、#46図。 及び第7図は1本発明と従来例のビーム特性を比較して
示す図である。 l・・・・・陰極、   2・・・・・・ヒータ3・・
・・・・III格子、4・・・・・・第2格子5・・・
・・・第3格子、6・・・・・・第4格子7・・・−・
光導電膜、8−・・・・集束コイル9・・・・・・−偏
向コイル、10,11..12・・・電子ビーム13・
・・・・・第1格子微小開口 14・・・・・・第2格子微小開口 15・・・・・・クロスオーバ 20・・・・・・中間格子 代理人 弁理士 薄 1)利−声 ロ===ヨ===コ 第2艶 埠4図 83図 lln5m2ftl ZCmm)
Figure 1 is a diagram showing a schematic configuration of an image pickup tube, Figure 2' is an enlarged sectional view showing the main parts of a conventional two-pole electron gun, Figures 43 and 4.
The figures are an enlarged sectional view, FIG. 5, and FIG. 46, respectively, showing the main parts of the bipolar electron gun according to the present invention. and FIG. 7 are diagrams showing a comparison of beam characteristics of the present invention and a conventional example. l...Cathode, 2...Heater 3...
...III lattice, 4... Second lattice 5...
...Third lattice, 6...Fourth lattice 7...-
Photoconductive film, 8--Focusing coil 9--Deflection coil, 10, 11. .. 12...electron beam 13.
...First grid micro-aperture 14...Second grid micro-aperture 15...Crossover 20...Intermediate grid agent Patent attorney Sui 1) Licensing ro===yo===ko No. 2 Yasubu 4 Figure 83 Figure lln5m2ftl ZCmm)

Claims (1)

【特許請求の範囲】 1、少なくとも、電子を放出する陰極と、その後段に配
置され陰極に対し正の電圧を印加した第lの微小開口を
有するfit格子と、その後段に配置され第1格子に対
し正の電圧を印加した第2の微小開口を有するlA2格
子とからなり、上記#11格子と上記第2格子の間で上
記第1−J)微小開口の近傍に発散電子レンズを形成し
たことを%黴とする撮像管電子銃。 2、上記第1格子は、上記#!lの微小開口を中心とし
た凹部な有する平板電極を含与、上記凹部の深さがその
内径の1/2以上であり、上記凹部によって上記第2格
子により生ずる電界を迩へいすることにより上記発散電
子レンズを形成することを特徴とする特許請求の範囲第
1項記載の撮像管電子銃。 配 3、上記第1格子と#!2格子との間に放置され。 第l格子の印加電圧に等しいかもしくは低い電圧を印加
した開口を有する中間格子を具備し、上記中間格子によ
り上記発散電子レンズを形成することを特徴とする特許
請求の範囲第1項記載の撮像管電子銃0 4、上記中間格子に印加する電圧を、上記陰極に印加す
る電圧と等しくしたことを特徴とする特許請求の範囲第
3項記載の撮像管電子銃。
[Claims] 1. At least a cathode that emits electrons, a fit grating disposed at its rear stage and having a first minute opening to which a positive voltage is applied to the cathode, and a first grating disposed at its rear stage. A diverging electron lens was formed between the #11 grating and the second grating in the vicinity of the 1-J) micro aperture. An image tube electron gun that uses % mold. 2. The above first lattice is the above #! The depth of the recess is at least 1/2 of the inner diameter of the plate electrode, and the electric field generated by the second lattice is passed through the recess. The image pickup tube electron gun according to claim 1, characterized in that it forms a diverging electron lens. Arrangement 3, the first grid above and #! It was left between the two grids. Imaging according to claim 1, further comprising an intermediate grating having an aperture to which a voltage equal to or lower than the voltage applied to the l-th grating is applied, and the diverging electron lens is formed by the intermediate grating. 4. The imaging tube electron gun according to claim 3, wherein the voltage applied to the intermediate grid is equal to the voltage applied to the cathode.
JP17300481A 1981-10-30 1981-10-30 Pickup tube electron gun Granted JPS5875743A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17300481A JPS5875743A (en) 1981-10-30 1981-10-30 Pickup tube electron gun
US06/437,335 US4540916A (en) 1981-10-30 1982-10-28 Electron gun for television camera tube
EP82110023A EP0078523B1 (en) 1981-10-30 1982-10-29 Electron gun for television camera tube
KR8204883A KR860000816B1 (en) 1981-10-30 1982-10-29 Electron gun for television camera tube
DE8282110023T DE3272757D1 (en) 1981-10-30 1982-10-29 Electron gun for television camera tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17300481A JPS5875743A (en) 1981-10-30 1981-10-30 Pickup tube electron gun

Publications (2)

Publication Number Publication Date
JPS5875743A true JPS5875743A (en) 1983-05-07
JPH0418418B2 JPH0418418B2 (en) 1992-03-27

Family

ID=15952401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17300481A Granted JPS5875743A (en) 1981-10-30 1981-10-30 Pickup tube electron gun

Country Status (1)

Country Link
JP (1) JPS5875743A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054142A (en) * 1983-08-04 1985-03-28 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Cathode ray tube

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154043A (en) * 1979-05-21 1980-12-01 Nippon Hoso Kyokai <Nhk> Image pickup tube
JPS5622030A (en) * 1979-07-12 1981-03-02 Philips Nv Device having image pickup tube
JPS5669755A (en) * 1979-11-08 1981-06-11 Sony Corp Electron gun

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154043A (en) * 1979-05-21 1980-12-01 Nippon Hoso Kyokai <Nhk> Image pickup tube
JPS5622030A (en) * 1979-07-12 1981-03-02 Philips Nv Device having image pickup tube
JPS5669755A (en) * 1979-11-08 1981-06-11 Sony Corp Electron gun

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054142A (en) * 1983-08-04 1985-03-28 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Cathode ray tube

Also Published As

Publication number Publication date
JPH0418418B2 (en) 1992-03-27

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