JPS5874054A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5874054A JPS5874054A JP4979682A JP4979682A JPS5874054A JP S5874054 A JPS5874054 A JP S5874054A JP 4979682 A JP4979682 A JP 4979682A JP 4979682 A JP4979682 A JP 4979682A JP S5874054 A JPS5874054 A JP S5874054A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- oxide film
- electrode
- junction area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 150000002739 metals Chemical class 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 3
- 241000218645 Cedrus Species 0.000 description 1
- 101000650578 Salmonella phage P22 Regulatory protein C3 Proteins 0.000 description 1
- 101001040920 Triticum aestivum Alpha-amylase inhibitor 0.28 Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4979682A JPS5874054A (ja) | 1982-03-27 | 1982-03-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4979682A JPS5874054A (ja) | 1982-03-27 | 1982-03-27 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8629072A Division JPS4943574A (enrdf_load_stackoverflow) | 1972-08-30 | 1972-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5874054A true JPS5874054A (ja) | 1983-05-04 |
| JPS6228581B2 JPS6228581B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=12841108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4979682A Granted JPS5874054A (ja) | 1982-03-27 | 1982-03-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5874054A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183143A (ja) * | 1986-02-06 | 1987-08-11 | Nec Corp | 半導体装置 |
-
1982
- 1982-03-27 JP JP4979682A patent/JPS5874054A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183143A (ja) * | 1986-02-06 | 1987-08-11 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6228581B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4113533A (en) | Method of making a mos device | |
| JPS5910275A (ja) | 竪型絶縁ゲート電界効果トランジスタ装置とその製造方法 | |
| US3629782A (en) | Resistor with means for decreasing current density | |
| EP0769808B1 (en) | Wet etching process with high selectivity between Cu and Cu3Ge | |
| JPH0818011A (ja) | 半導体装置及びその製造方法 | |
| JPS5874054A (ja) | 半導体装置 | |
| US4189826A (en) | Silicon charge-handling device employing SiC electrodes | |
| US3669732A (en) | Procedure for making semiconductor devices of small dimensions | |
| US3760492A (en) | Procedure for making semiconductor devices of small dimensions | |
| JP2719569B2 (ja) | 半導体装置 | |
| JPH0260167A (ja) | 半導体装置 | |
| JPS605068B2 (ja) | Ｍｏｓ形半導体装置 | |
| JPS597231B2 (ja) | 絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JPS59119740A (ja) | 半導体装置 | |
| JP2511023B2 (ja) | 双方向性サイリスタ | |
| KR960006339B1 (ko) | 반도체장치의 제조방법 | |
| JPS5811745B2 (ja) | 半導体装置の製造方法 | |
| JPS57124429A (en) | Manufacture of semiconductor device | |
| JPS627703B2 (enrdf_load_stackoverflow) | ||
| JPS60121769A (ja) | Ｍｉｓ半導体装置の製法 | |
| JPH03276763A (ja) | 半導体装置 | |
| JPS57199241A (en) | Semiconductor device | |
| JPS59186365A (ja) | 半導体装置およびその製造方法 | |
| JPH05343703A (ja) | 不揮発性メモリの製造方法 | |
| JPS5933984B2 (ja) | 絶縁ゲイト型電界効果半導体装置の作製方法 |