JPS587068B2 - thyristor - Google Patents
thyristorInfo
- Publication number
- JPS587068B2 JPS587068B2 JP49067002A JP6700274A JPS587068B2 JP S587068 B2 JPS587068 B2 JP S587068B2 JP 49067002 A JP49067002 A JP 49067002A JP 6700274 A JP6700274 A JP 6700274A JP S587068 B2 JPS587068 B2 JP S587068B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- emitter electrode
- auxiliary
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Description
【発明の詳細な説明】
本発明は、交互に異なる導電型の少なくとも４つの領域
を有する半導体片と、この半導体片内に形成された第一
領域としてのエミツタ領域と、このエミツク領域に設け
られたエミツタ電極と、半導体片内に形成された第二領
域としてのベース領域と、このベース領域に設けられた
制御電極と、補助エミツク領域と、この補助エミツク領
域に設けられ且つベース領域と接続された補助エミツタ
電極と、エミツタ領域とベース領域との間に形成された
少くとも１つのｐｎ接合と、ベース領域又はエミツク領
域内において半導体片の表面にあり短絡路として作用す
る分路とを備え、この分路はｐｎ接合によって遮断され
ておらず、エミツタ電極と補助エミツタ電極とを直接結
合しているサイリスタに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a semiconductor chip having at least four regions of alternately different conductivity types, an emitter region as a first region formed in the semiconductor chip, and a semiconductor chip provided in the emitter region. a base region as a second region formed in the semiconductor piece, a control electrode provided in this base region, an auxiliary emitter region, and a base region provided in this auxiliary emitter region and connected to the base region. an auxiliary emitter electrode, at least one pn junction formed between the emitter region and the base region, and a shunt on the surface of the semiconductor chip in the base region or in the emitter region, which acts as a short circuit; This shunt relates to a thyristor which is not interrupted by a pn junction and which directly couples the emitter electrode and the auxiliary emitter electrode.
このようなサイリスタは例えばアメリカ特許第３５８６
９２７号明細書に記載されている。Such a thyristor is disclosed in US Pat. No. 3,586, for example.
No. 927 specification.
そのサイリスタにおいては、複数の分路が存在している
。In the thyristor there are multiple shunts.
これらの分路はベース領域のある部分によって形成され
、この部分は、エミツタ電極のベース領域と結合された
部分と、補助エミツタ領域との間にある。These shunts are formed by a part of the base region, which part lies between the part of the emitter electrode connected to the base region and the auxiliary emitter region.
また公知のサイリスタのエミツタ電極は突起部を有し、
この突起部はエミツタ領域とベース領域との間のｐｎ接
合を橋絡し、そしてエミツタ電極と補助エミツタ電極と
の間のオーム結合を形成する。Furthermore, the emitter electrode of a known thyristor has a protrusion,
This protrusion bridges the pn junction between the emitter region and the base region and forms an ohmic coupling between the emitter electrode and the auxiliary emitter electrode.
また公知のサイリスタにあっては、エミツタ電極によっ
て橋絡されていないｐｎ接合の長さは、短絡されたｐｎ
接合の長さに比して小さい。Furthermore, in known thyristors, the length of the pn junction not bridged by the emitter electrode is the length of the shorted pn junction.
Small compared to the length of the joint.
従って主サイリスタを点弧させるのに必要な電流は非常
に大きくなる。The current required to fire the main thyristor is therefore very large.
本発明は、上述のようなサイリスタについて、主サイリ
スタのための点弧電流を小さく保持することができるよ
うに改善することを目的とするものである。The object of the present invention is to improve the thyristor as described above so that the ignition current for the main thyristor can be kept small.
この目的は本発明によれば、冒頭に述べたサイリスタに
おいて、一方においてエミツタ電極とエミツク領域とは
、また他方において補助エミツタ電極は、複数の平行に
延び互に導電接続された帯状体から成り、エミツク電極
とエミツタ領域との帯状体は補助エミツタ電極の帯状体
間にあり、エミツタ電極の帯状体の一自由端と補助エミ
ツタ電極との間に前記分路が存在するようにすることに
よって達成される。This object is achieved according to the invention in the thyristor mentioned at the outset, in which the emitter electrode and the emitter region on the one hand and the auxiliary emitter electrode on the other hand consist of a plurality of parallel strips electrically connected to one another, The strip of emitter electrode and emitter region is between the strips of the auxiliary emitter electrode, and this is achieved by ensuring that said shunt exists between one free end of the strip of the emitter electrode and the auxiliary emitter electrode. Ru.
本発明の有利な構成によれば、エミツク電極の少くとも
一つの帯状体がその自由端において補助エミツク電極の
下に延びている。According to an advantageous embodiment of the invention, at least one strip of the emitter electrode extends at its free end below the auxiliary emitter electrode.
本発明の利点は、分路の抵抗を、エミツク電極の自由端
の延長又は短縮によって極めて正確に調整できる点にあ
る。An advantage of the invention is that the resistance of the shunt can be adjusted very precisely by lengthening or shortening the free end of the emitter electrode.
次に本発明の実施例を図面について説明する。Next, embodiments of the present invention will be described with reference to the drawings.
図において、半導体基体１はベース領域２、補助エミツ
タ領域３およびエミツタ領域４を有する。In the figure, a semiconductor body 1 has a base region 2 , an auxiliary emitter region 3 and an emitter region 4 .
補助エミツタ領域３はリング状になっており、一方エミ
ツタ領域４は帯状の形になっている。The auxiliary emitter area 3 is ring-shaped, while the emitter area 4 is strip-shaped.
ベース領域２と補助エミツク領域３との間にはｐｎ接合
８，９がある。Between the base region 2 and the auxiliary emitter region 3 there is a pn junction 8,9.
エミツタ領域４とベース領域２との間にはｐｎ接合５が
ある。There is a pn junction 5 between the emitter region 4 and the base region 2.
ベース領域２は制御電極７と結ばれている。The base region 2 is connected to a control electrode 7 .
補助エミツク領域３は帯状の部分を有する補助エミツタ
電極１０と電気的に結ばれている。The auxiliary emitter region 3 is electrically connected to an auxiliary emitter electrode 10 having a band-shaped portion.
補助エミツク電極１０、エミツク領域４およびエミツク
電極６の帯状の部分は互にはいりこみ合っており、補助
エミツタ電極１０の帯状の部分は半導体基体１のベース
領域２と結ばれている。The strip-shaped portions of the auxiliary emitter electrode 10, the emitter region 4, and the emitter electrode 6 fit into each other, and the strip-shaped portion of the auxiliary emitter electrode 10 is connected to the base region 2 of the semiconductor substrate 1.
エミツク領域４は帯状の部分の−・端１１が補助エミツ
ク電極１０の下に存在し、その結果エミツク電極と補助
エミツタ電極との間に導電性ブリッジ１２が形成される
。The end 11 of the strip-shaped portion of the emitter region 4 is located below the auxiliary emitter electrode 10, so that a conductive bridge 12 is formed between the emitter electrode and the auxiliary emitter electrode.
この導電ブリッジは電気的短絡作用を有し、よく知られ
ているように、サイリスタのｄｕ／ｄｔ値を高めるため
に用いられる。This conductive bridge has an electrical shorting effect and is used, as is well known, to increase the du/dt value of the thyristor.
帯状の領域と電極とを図のように配置したときは、場合
によっては従来の分路用の穴を全くなくすことができる
。When the strips and electrodes are arranged as shown in the figure, conventional shunt holes can in some cases be completely eliminated.
この方法は、例えばエミツタ領域４の端１１を任意に拡
げられないときに有利である。This method is advantageous, for example, when the end 11 of the emitter region 4 cannot be widened arbitrarily.
図は本発明の実施例の平面図である。
１・・・・・・半導体基体、２・・・・・・ベース領域
、３・・・・・・補助エミツク領域、４・・・・・・エ
ミツタ領域、５・・・・・・ｐｎ接合、６・・・・・・
エミツタ電極、７・・・・・・制御電極、８，９・・・
・・・ｐｎ接合、１０・・・・・・補助エミツタ電極、
１１・・・・・・エミツタ領域の一端、１２・・・・・
・導電性ブリッジ。The figure is a plan view of an embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Base region, 3... Auxiliary emitter region, 4... Emitter region, 5... pn junction , 6...
Emitter electrode, 7... Control electrode, 8, 9...
... pn junction, 10 ... auxiliary emitter electrode,
11... One end of the emitter area, 12...
・Conductive bridge.
Claims (1)
る半導体片と、この半導体片内に形成された第一領域と
してのエミツタ領域と、このエミツク領域に設けられた
エミツタ電極と、半導体片内に形成された第二領域とし
てのベース領域と、このベース領域に設けられた制御電
極と、補助エミツタ領域と、この補助エミツタ領域に設
けられ且つベース領域と接続された補助エミツタ電極と
、エミツク領域とベース領域との間に形成された少くと
も１つのｐｎ接合と、ベース領域又はエミツタ領域内に
おいて半導体片の表面にあり短絡路として使用する分路
とを備え、この分路はＰｎ接合によって遮断されておら
ず、エミツク電極と補助エミツタ電極とを直接結合して
いるサイリスタにおいて、一方においてエミツタ電極と
エミツタ領域とは、又他方において補助エミツタ電極は
、複数の平行に延び互に導電接続された帯状体から成り
、エミツク電極とエミツタ領域との帯状体は補助エミツ
タ電極の帯状体間にあり、エミツタ電極の帯状体の一白
由端と補助エミツタ電極との間に前記分路が存在するこ
とを特徴とするサイリスタ。1. A semiconductor piece having at least four regions of alternating conductivity types, an emitter region as a first region formed in this semiconductor piece, an emitter electrode provided in this emitter region, and an emitter electrode formed in the semiconductor piece. a base region as a second region, a control electrode provided in this base region, an auxiliary emitter region, an auxiliary emitter electrode provided in this auxiliary emitter region and connected to the base region, an emitter region and a base region. at least one pn junction formed between the semiconductor chip and the base region and a shunt on the surface of the semiconductor chip in the base region or the emitter region for use as a short circuit, the shunt being interrupted by the pn junction. In a thyristor in which an emitter electrode and an auxiliary emitter electrode are directly coupled, the emitter electrode and the emitter region on the one hand, and the auxiliary emitter electrode on the other hand, are composed of a plurality of strips extending in parallel and electrically connected to each other. characterized in that the strip of the emitter electrode and the emitter region is between the strips of the auxiliary emitter electrode, and the shunt exists between one white end of the strip of the emitter electrode and the auxiliary emitter electrode. thyristor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2329872 | 1973-06-12 | ||
| DE2329872A DE2329872C3 (en) | 1973-06-12 | 1973-06-12 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5036084A JPS5036084A (en) | 1975-04-04 |
| JPS587068B2 true JPS587068B2 (en) | 1983-02-08 |
Family
ID=5883757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49067002A Expired JPS587068B2 (en) | 1973-06-12 | 1974-06-12 | thyristor |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS587068B2 (en) |
| AT (1) | AT330297B (en) |
| BE (1) | BE816223A (en) |
| CH (1) | CH572279A5 (en) |
| DE (1) | DE2329872C3 (en) |
| FR (1) | FR2233716B1 (en) |
| GB (1) | GB1477513A (en) |
| NL (1) | NL7404409A (en) |
| SE (1) | SE406841B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH598696A5 (en) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie | |
| IT1087185B (en) * | 1976-10-18 | 1985-05-31 | Gen Electric | CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT |
| JPH0161329U (en) * | 1987-10-09 | 1989-04-19 | ||
| US5345814A (en) * | 1990-12-28 | 1994-09-13 | Whirlpool Corporation | Method and apparatus for testing vacuum insulation panel quality |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48104477A (en) * | 1972-03-03 | 1973-12-27 |
-
1973
- 1973-06-12 DE DE2329872A patent/DE2329872C3/en not_active Expired
-
1974
- 1974-04-01 NL NL7404409A patent/NL7404409A/xx unknown
- 1974-05-03 AT AT368374A patent/AT330297B/en not_active IP Right Cessation
- 1974-05-20 CH CH691574A patent/CH572279A5/xx not_active IP Right Cessation
- 1974-06-10 GB GB2560274A patent/GB1477513A/en not_active Expired
- 1974-06-11 FR FR7420143A patent/FR2233716B1/fr not_active Expired
- 1974-06-12 BE BE145329A patent/BE816223A/en unknown
- 1974-06-12 JP JP49067002A patent/JPS587068B2/en not_active Expired
- 1974-06-12 SE SE7407777A patent/SE406841B/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48104477A (en) * | 1972-03-03 | 1973-12-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7404409A (en) | 1974-12-16 |
| BE816223A (en) | 1974-09-30 |
| CH572279A5 (en) | 1976-01-30 |
| DE2329872C3 (en) | 1979-04-26 |
| ATA368374A (en) | 1975-09-15 |
| DE2329872A1 (en) | 1975-01-09 |
| FR2233716B1 (en) | 1978-08-11 |
| FR2233716A1 (en) | 1975-01-10 |
| SE406841B (en) | 1979-02-26 |
| SE7407777L (en) | 1975-01-15 |
| JPS5036084A (en) | 1975-04-04 |
| DE2329872B2 (en) | 1978-08-24 |
| AT330297B (en) | 1976-06-25 |
| GB1477513A (en) | 1977-06-22 |
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