IT1087185B - CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT - Google Patents

CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT

Info

Publication number
IT1087185B
IT1087185B IT2859577A IT2859577A IT1087185B IT 1087185 B IT1087185 B IT 1087185B IT 2859577 A IT2859577 A IT 2859577A IT 2859577 A IT2859577 A IT 2859577A IT 1087185 B IT1087185 B IT 1087185B
Authority
IT
Italy
Prior art keywords
control electrode
controlled rectifier
high sensitivity
high capacity
capacity
Prior art date
Application number
IT2859577A
Other languages
Italian (it)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of IT1087185B publication Critical patent/IT1087185B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
IT2859577A 1976-10-18 1977-10-14 CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT IT1087185B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73320576A 1976-10-18 1976-10-18

Publications (1)

Publication Number Publication Date
IT1087185B true IT1087185B (en) 1985-05-31

Family

ID=24946651

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2859577A IT1087185B (en) 1976-10-18 1977-10-14 CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT

Country Status (6)

Country Link
JP (1) JPS584828B2 (en)
DE (1) DE2746406C2 (en)
FR (1) FR2368146A1 (en)
GB (1) GB1573234A (en)
IT (1) IT1087185B (en)
SE (1) SE431806B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS583283A (en) * 1981-06-30 1983-01-10 Toshiba Corp Thyristor
JPS5998556A (en) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp Phototrigger thyristor
GB2150347B (en) * 1983-11-21 1987-02-25 Westinghouse Brake & Signal Amplifying gate thyristor with zones of different cathode-gate resistance
JPS60192124A (en) * 1984-03-09 1985-09-30 Daikin Mfg Co Ltd Friction device for damper disc
JPS63201246U (en) * 1987-06-17 1988-12-26

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS5021346B1 (en) * 1970-08-14 1975-07-22
GB1346074A (en) * 1971-02-23 1974-02-06 Gen Electric Gate-controlled thyristors
GB1346604A (en) * 1971-02-26 1974-02-13 Gen Electric Gate controlled thyristor
JPS5229592B2 (en) * 1971-10-01 1977-08-03
JPS539516B2 (en) * 1971-12-29 1978-04-06
DE2329872C3 (en) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2356906A1 (en) * 1973-11-14 1975-05-22 Siemens Ag THYRISTOR
CH567803A5 (en) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2407696C3 (en) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor

Also Published As

Publication number Publication date
SE7711699L (en) 1978-04-19
SE431806B (en) 1984-02-27
GB1573234A (en) 1980-08-20
DE2746406A1 (en) 1978-04-20
FR2368146B1 (en) 1984-01-06
DE2746406C2 (en) 1983-08-25
FR2368146A1 (en) 1978-05-12
JPS5368083A (en) 1978-06-17
JPS584828B2 (en) 1983-01-27

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