Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
  • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
  • H01L29/0839—Cathode regions of thyristors

Applications Claiming Priority (2)

Publications (2)

Family

ID=5883757

Family Applications (1)

Country Status (9)

Cited By (2)

Families Citing this family (2)

Citations (1)

• 1973
  • 1973-06-12 DE DE2329872A patent/DE2329872C3/en not_active Expired
• 1974
  • 1974-04-01 NL NL7404409A patent/NL7404409A/xx unknown
  • 1974-05-03 AT AT368374A patent/AT330297B/en not_active IP Right Cessation
  • 1974-05-20 CH CH691574A patent/CH572279A5/xx not_active IP Right Cessation
  • 1974-06-10 GB GB2560274A patent/GB1477513A/en not_active Expired
  • 1974-06-11 FR FR7420143A patent/FR2233716B1/fr not_active Expired
  • 1974-06-12 JP JP49067002A patent/JPS587068B2/en not_active Expired
  • 1974-06-12 SE SE7407777A patent/SE406841B/en unknown
  • 1974-06-12 BE BE145329A patent/BE816223A/en unknown

Patent Citations (1)

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