JPS5868944A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5868944A
JPS5868944A JP56167219A JP16721981A JPS5868944A JP S5868944 A JPS5868944 A JP S5868944A JP 56167219 A JP56167219 A JP 56167219A JP 16721981 A JP16721981 A JP 16721981A JP S5868944 A JPS5868944 A JP S5868944A
Authority
JP
Japan
Prior art keywords
pellet
tab
solder
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56167219A
Other languages
Japanese (ja)
Inventor
Hiromichi Suzuki
博通 鈴木
Susumu Okikawa
進 沖川
Hajime Sato
佐藤　始
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56167219A priority Critical patent/JPS5868944A/en
Publication of JPS5868944A publication Critical patent/JPS5868944A/en
Pending legal-status Critical Current

Links

Classifications

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To reduce the cost of a semiconductor device by a method wherein Al parts of a pellet equipping part and an inner lead part of a lead frame, and an Al part on the back of the pellet are soldered, and an electrode part and the inner lead part are connected with Al wires. CONSTITUTION:Al layers are formed by plating, etc., on a tab 2 and inner leads 3 of a lead frame 1. While an Al layer 8 is formed by plating, etc., on the back of a semiconductor pellet 5. By heating the tab 2 on a heater up to the fusion temperature using a nitrogen atmosphere and moreover using solder 7 wettable favorably with Al, solder is fused in several seconds, the pellet 5 is fusion welded by swing and scrubbing, the Al layer 8 on the back of pellet and the Al layer 6 on the tab 2 are unified in one body by solder 7, and the pellet 5 is fixed to the tab 2 when solder is cooled and soldified again. After then, the pellet 5 and the inner leads 3 are connected with Al wires 9.

Description

【発明の詳細な説明】 本発明は金、銀材料の省略化、低コスト化を図りかつ信
頼性の高い半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly reliable semiconductor device that eliminates the use of gold and silver materials and reduces costs.

従来、半導体ペレットをリードフレームにペレット付ｆ
ｆする場合、リードフレームの半導体ペレット付は部及
びインナーリード部に金めつきを施こしておき、べＧン
トのシリコンとり゛−ドフレームの金、とを加熱（約４
００Ｃ）してスクラブすることによ゛り金−シリコン共
晶構造を作り、ペレ・ツト付けする方法を用い、ペルレ
ット付は後ペレットの電極部とインナーリード部を金線
によって接続する方式が一般的である。Conventionally, semiconductor pellets were attached to lead frames.
In the case of f, gold plating is applied to the semiconductor pellet attached part and the inner lead part of the lead frame, and the gold of the base silicon and lead frame is heated (approximately 4
00C) and scrubbing to create a gold-silicon eutectic structure, and attaching the pellet to the pellet.The general method for attaching the pellet is to connect the electrode part of the latter pellet to the inner lead part using a gold wire. It is true.

ところが、このような構造では、ペレットと金めっき層
との間に形成される共晶合金が、両者間での面圧の不均
一等が原因となって、ペレット全面に均一に形成されな
いと、所謂部れの悪い箇所が生じ、その境界部に応力集
中が生じてペレットクラックが起こり昌くなり、信頼性
の低いものにな〜てしまう。また、前述の構造では高価
な金属である金をペレット付は及びワイヤボンディング
部やワイヤに多量に用いているためコスト高になってい
る。However, in such a structure, if the eutectic alloy formed between the pellet and the gold plating layer is not formed uniformly over the entire surface of the pellet due to uneven surface pressure between the two, So-called areas with poor contact occur, stress concentration occurs at the boundaries, and pellet cracks occur and become unreliable. Further, in the above-mentioned structure, a large amount of gold, which is an expensive metal, is used for the pellet attachment, wire bonding parts, and wires, resulting in high costs.

したがって、本発明の目的は、信頼性が高く、しかも低
コストの半導体装置を提供することにある。　　　　　
　　　　　　　　　　　　　　°゛このような目的を達
成するために本発明による半導体装置は、リードフレー
ムのベレット付１部及びインナーリード部にＡＪをめっ
きあるいは蒸着によりもうけたものと、ペレット裏面に
同じようにＡ！なめっきあるいは蒸着によりもうけたも
のを、Ａ４が良く濡れるはんだで溶着しかつペレットの
電極部とインナーリード部をＡ！ワイヤで接続してなる
構造を特徴とするものである。Therefore, an object of the present invention is to provide a highly reliable and low-cost semiconductor device.
In order to achieve such an object, the semiconductor device according to the present invention has a lead frame in which AJ is formed on the pelleted part and the inner lead part by plating or vapor deposition, and AJ is formed on the back side of the pellet in the same way. The material obtained by plating or vapor deposition is welded with solder that wets A4 well, and the electrode part and inner lead part of the pellet are A! It is characterized by a structure connected by wires.

以下本発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described below based on the drawings.

第１図は本発明の半導体装置の縦断面図であり、銅系、
鉄系金属の板材を所定のパターンに打抜き成形成いはエ
ツチングして形成したリードフレーム１は牛導体ペレッ
ト５をボンディングするタブ２及びインナーリード３に
Ａ１をめっきあるいは蒸着で形成しており、さらにアウ
ターリード４からなっている。そして前記タブ２には、
シリコンからなる牛導体ベレット５の裏面にＡ１層８を
めっき又は蒸着でもうけたものをＡＪに対して濡れの良
いはんだ７により加熱溶融して溶着し、かつペレット５
とインナーリード３上にもうけたＡノ層６間をＡ！ワイ
ヤ９にて接続している。更に、これ等ペレット５やイン
ナーリード３はレジン１０にて封止され、レジンモール
ド製パッケージが完成されている。FIG. 1 is a longitudinal cross-sectional view of the semiconductor device of the present invention, in which copper-based,
The lead frame 1 is formed by punching or etching a ferrous metal plate into a predetermined pattern, and the tab 2 and inner lead 3 for bonding the conductor pellet 5 are plated or vapor-deposited with A1. It consists of 4 outer leads. And in the tab 2,
An A1 layer 8 is formed on the back side of a conductor pellet 5 made of silicon by plating or vapor deposition, and is welded to AJ by heating and melting it with a solder 7 that has good wettability, and the pellet 5 is
and A layer 6 formed on inner lead 3. It is connected with wire 9. Furthermore, these pellets 5 and inner leads 3 are sealed with resin 10 to complete a resin molded package.

次に上記構造の牛導体装置の製造方法を第２図乃至第５
図を用いて説明する。Next, the method for manufacturing the cow conductor device having the above structure is shown in FIGS. 2 to 5.
This will be explained using figures.

先ず、所定のパターンに形成した銅系、鉄系リードフレ
ームｌのタブ２及びインナーリード３にＡＪをめ、５ぎ
あるいは蒸着により形成する。６一方シリコンを主体と
した牛導体ベレット５はその裏面（ボンディング面）に
第３図に示すとと＜Ａ１層８をめっきあるいは蒸着によ
り形成してお（。First, an AJ is placed on the tabs 2 and inner leads 3 of a copper-based or iron-based lead frame 1 formed in a predetermined pattern, and formed by 5-gluing or vapor deposition. 6 On the other hand, the conductor pellet 5 mainly made of silicon has an A1 layer 8 formed by plating or vapor deposition on its back surface (bonding surface) as shown in FIG.

そしてリードフレーム１のタブ２をヒーター（図示せず
）上で窒素雰囲気を使用しかつＡ４とよく濡れるはんだ
７を用いて溶融温度迄加熱することにより数秒で溶融し
、前記ペレット５を揺動こすり（スクラブ）により溶着
し、ペレット裏面のＭ層８とタブ２のＡ１層６とはばん
だ７により一体化し、再び冷却固イｉしたときにペレッ
ト５をタブ２に固着する。その後、ペレット５とインナ
ーリード３をＡＪワイヤ９で接続し、レジン１０で封止
することにより第”１ｗＪに示した牛導体装置が完成さ
れるのである。従って、以上のようにして製造された牛
導体装置によれば、ボイドの少ない高信頼度のペレット
はんだ付け（低温ボンディング）が可能になり、しかも
金、銀等の高価な貴金属めっ墜の必要性もなくなり、大
巾な原価低減につながる。Then, the tab 2 of the lead frame 1 is melted in a few seconds by heating it to the melting temperature using a nitrogen atmosphere on a heater (not shown) and a solder 7 that is well wetted with A4, and the pellet 5 is oscillated and rubbed. (scrubbing), and the M layer 8 on the back surface of the pellet and the A1 layer 6 of the tab 2 are integrated with the solder 7, and when the pellet is cooled and hardened again, the pellet 5 is fixed to the tab 2. Thereafter, the pellet 5 and the inner lead 3 are connected with the AJ wire 9 and sealed with the resin 10, thereby completing the cow conductor device shown in No. 1 wJ. The cow conductor device enables highly reliable pellet soldering (low-temperature bonding) with few voids, and also eliminates the need for plating expensive precious metals such as gold and silver, resulting in significant cost reductions. Connect.

なお、本発明はレジンモールド型の半導体装置に限定さ
れるものではなく、他の型式の半導体装置も含むもので
ある。Note that the present invention is not limited to resin mold type semiconductor devices, but also includes other types of semiconductor devices.

以上説明したように、本発明によれば、信頼性が高く、
しかも極めて低コストの半導体装置を得ることができる
。As explained above, according to the present invention, reliability is high;
Moreover, an extremely low-cost semiconductor device can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の半導体装置の一実施例を示す断面図、
第２図はリードフレーム上の金属めっき層を示す部分断
面図、第３図は牛導体ペレットの裏面構造の一例を示す
断面図、第４図乃至第５図は本発明の半導体装置の製造
工程を順次示す図である。 １・・・リードフレーム、２・・・タブ、３・・・イン
ナーリード、４・・・アウターリード、５・・・半導体
ペレット、６・・・ＡＪ３層、７・・・はんだ、８・・
・Ａ１層、９・・・Ａ！線、１０・・・レジン。FIG. 1 is a sectional view showing an embodiment of the semiconductor device of the present invention;
FIG. 2 is a partial cross-sectional view showing the metal plating layer on the lead frame, FIG. 3 is a cross-sectional view showing an example of the back structure of the conductor pellet, and FIGS. 4 and 5 are the manufacturing steps of the semiconductor device of the present invention. FIG. DESCRIPTION OF SYMBOLS 1... Lead frame, 2... Tab, 3... Inner lead, 4... Outer lead, 5... Semiconductor pellet, 6... AJ3 layer, 7... Solder, 8...
・A1 layer, 9...A! Line, 10...resin.

Claims (1)

【特許請求の範囲】[Claims] ペレット付は部及びインナーリード部にアルミニウム層
を形成したリードフレームと、ペレット付は面にアルミ
ニウム層を形成した半導体ペレットと、前記両アルミニ
ウム層を結合するはんだ層と、前記半導体ペレットの電
極部と前記インナーリード部とを電気的に接続するアル
ミニウムワイヤとを具備してなる半導体装置。A lead frame with a pellet and an inner lead formed with an aluminum layer, a semiconductor pellet with an aluminum layer formed on the surface of the pellet, a solder layer that connects both the aluminum layers, and an electrode part of the semiconductor pellet. A semiconductor device comprising an aluminum wire electrically connected to the inner lead portion.
JP56167219A 1981-10-21 1981-10-21 Semiconductor device Pending JPS5868944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167219A JPS5868944A (en) 1981-10-21 1981-10-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167219A JPS5868944A (en) 1981-10-21 1981-10-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5868944A true JPS5868944A (en) 1983-04-25

Family

ID=15845638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167219A Pending JPS5868944A (en) 1981-10-21 1981-10-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5868944A (en)

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