JPS5867091A - Glazed ceramic board - Google Patents
Glazed ceramic boardInfo
- Publication number
- JPS5867091A JPS5867091A JP16678081A JP16678081A JPS5867091A JP S5867091 A JPS5867091 A JP S5867091A JP 16678081 A JP16678081 A JP 16678081A JP 16678081 A JP16678081 A JP 16678081A JP S5867091 A JPS5867091 A JP S5867091A
- Authority
- JP
- Japan
- Prior art keywords
- board
- composition
- substrate
- less
- glaze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Electronic Switches (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明社ダレーズ表面の平坦性および耐熱性が嵐好で、
pbo 、アルカリを貴賓しないにもかかわらず、熱伝
導率が低く改爽された電子部品層07アタシ電リダレー
ズド基I[および薄膜グレーズドailK関する40−
t’Ij&。[Detailed description of the invention] The surface flatness and heat resistance of the present invention's Daleze are excellent,
pbo, an electronic component layer that has low thermal conductivity and is refreshed even though it does not contain alkali.
t'Ij&.
最近、めざましい電子工業の発展に伴い舎種電子部品は
、高品質、高精密化されてきている。In recent years, with the remarkable development of the electronics industry, electronic components have become higher quality and more precise.
グレーズドセラ擢ツクス基板はアル建す中べ[アaI[
上にガラス層を形成させえものであp、薄Mtl、<は
厚II抵抗素子用、高精密膜回路を利用する集積回路用
や感熱記鎌装置のナー!ルヘツF用等に*jillれて
いる。The glazed ceramic substrate is used during construction.
A glass layer can be formed on top, and it is suitable for p, thin Mtl, and thick II resistance elements, for integrated circuits using high-precision film circuits, and for thermal recording devices. *Jill is used for Ruhetsu F etc.
とのナーマルヘッドとしてのグレーズド基板の利F[K
)l膜シよび薄膜方式があシ、そO厚膜方式では配曽が
1ドツト/簡以上が可能とな夛蓄熱ガラス層の挿入で印
加電圧は半減し、熱効率が高められている。1九薄膜方
式で社配瞭がtドツト/−以上が可能であ)、轟然ダレ
ーズ表wO平坦性、耐熱性およびアルカリ、 PbOy
リー〇1!京が高まっている。Benefits of glazed substrate as a thermal head with F[K
) Thick film and thin film methods are available, while thick film methods reduce the applied voltage by half and increase thermal efficiency by inserting a heat storage glass layer that allows the distribution to be more than 1 dot per layer. 19 Thin film method allows for better clarity than t dots), excellent flatness, heat resistance and alkali, PbOy
Lee〇1! Kyoto is rising.
更にグレーズに要求される項■として、熱伝導率が健い
ことであ)、そOII標値としてに−aooJαl/I
・S・C・℃の性質が必要である。この熱伝導率でiダ
ν−ズ層O厚みを薄く形成出来為ために、グレーズ0J
IJI上)中央局等が小さく表IIO千m*ダレーメト
七ツ電ツクス基板と愈る。In addition, the glaze is required to have good thermal conductivity), and the OII target value is -aooJαl/I
・S・C・℃ properties are required. With this thermal conductivity, the i-dase layer O can be formed thinly, so the glaze 0J
On IJI) The central station etc. are small and are reduced to Table IIO 1,000 m * Dale Met 7 electric circuit board.
本実−社以上Oよう1に要求されゐ品質と耐鶴肩伏点が
7−0C以上の高温グレーズの一発を1的として虞1れ
九%O′eあ)、そO要替はm0s14〜γ/Jlル嗟
* BaO/ 11− At峰ル参、ムl雪〜4〜/4
4ル*1必須成分として、とO金成分Q食組成物がte
ath@であ為グレーズ親戚物をセラミックス基板上に
Ik布し、焼成して形成したことt4I徴とするものと
、こOJj!P1[成分に副成分として8rO10篭ル
チ以下e Btus 1モル−以下、CaO/#Jlk
#−以下#Mgoz4#−以下O内、7種以下管内えて
全組成物が1004ルーであるグレーズ組成物をセ9イ
ツクス基板上に塗布し、焼成して形成し九ことをII#
徴とするものである。The quality and crane resistance required by the company above is 9% O'eA), and the need for replacement is as follows: m0s14~γ/JlRu* BaO/ 11- Atminerusan, Muryuki~4~/4
4 *1 As an essential component, and O gold component Q food composition.
This OJj! P1 [Ingredients and subcomponents: 8rO10 or less e Btus 1 mol or less, CaO/#Jlk
#-Hereinafter #Mgoz4#-Hereinafter O, a glaze composition with a total composition of 1004 lue, including 7 or less types, was applied on a sensor substrate and baked to form a glaze composition II#
It is a sign.
本発明で紘低い熱伝導率を得るためにBooを多量に加
え、また結晶化の防止と耐熱性を向上するためにAbo
lt多く含有することを特長とするものである。In the present invention, a large amount of Boo is added to obtain low thermal conductivity, and Abo is added to prevent crystallization and improve heat resistance.
It is characterized by containing a large amount of lt.
上記必須成分のみのものと、副成分を含有したグレーズ
とを比較したとき、諸善性において紘殆んど変シないが
、必須成分のみのものは若干、ガラス中に気泡が残存し
、やや失透し中すい性質を有する。When comparing a glaze containing only the above essential ingredients and a glaze containing sub-components, there is almost no change in the properties, but the glaze containing only the essential ingredients has some air bubbles remaining in the glass. It has devitrification and mesodia properties.
上記グレーズ組成において、その限定範at外れると、
810gが144ルー以下では高膨張係数とな夛セツセ
ックス基板えの密着性が低下し7/峰ルチ以上ではsi
mが悪くなる。 BaOが111%ルー以下では低い熱
伝導率が得られず。In the above glaze composition, if it falls outside the limited range,
If 810g is less than 144ru, the coefficient of expansion will be high, and the adhesion of the multi-layer substrate will be reduced, and if it is more than 7/100g, it will be si.
m gets worse. If BaO is less than 111% Roux, low thermal conductivity cannot be obtained.
ダレーズ表IfOPjle % O1tXm来1m <
、Jr 4ル一以上で社熱廖脹率が大も(なる、ムb
偽が44ルー以下では安定したガラスと成夛−く、/4
%ルー以上でFi溶融が開離となる。を九。Dale's table IfOPjle % O1tXm to 1m <
, Jr. The company's thermal expansion rate is large for 4 or more people.
If the false value is less than 44 ru, it becomes stable glass, /4
% Roux or more, Fi melting becomes open. Nine.
シへがt4ルー會ではガラス化を助長し、かつ溶融性を
促進させるが、それ以上では耐熱性が低下する* Sr
O* CaOa共K / 04 # 44 flではj
ラス化を助長するが、それ以上に&J*と失透し中すく
なゐ、 MgOFiガラスO清澄を促進し、泡を被は中
すくすゐ作用があ〕J4ルー★では効果があゐためであ
る。Sr increases vitrification and promotes meltability at T4 lubrication, but beyond this the heat resistance decreases *Sr
O* CaOa K / 04 # 44 fl j
This is because J4 Ru★ has the effect of promoting lath formation, but moreover, it promotes clarification of MgOFi glass O by devitrification with &J*, and reduces the thickness of the glass by reducing bubbles. be.
以下、本実−を実施例に基づ亀許細に説明する。The present invention will be explained in detail below based on examples.
実施例
下記i11/lI0%ルー調舎割舎の組成ガラスが得ら
れるように、Item *ム1 (OH)a * B*
■1HJOs * CaCO5* 8rOOs * I
k−を秤量し、ライカイ機にて拠金しアル々す質ルツI
にて/##℃O最適l1lll!で溶融した。その溶融
液を水中に投入して急冷し、それをアル々す展のl−ル
ンルで微粉砕してガラス7リフトを得た0以上の方法で
壱組成のそれぞれのガラス7リツFtap作した。Example: Item *Mu1 (OH)a*B*
■1HJOs * CaCO5 * 8rOOs * I
Weigh the k-, deposit it with the Raikai machine, and then give it to the user.
At/##℃O optimum l1llll! It melted. The molten liquid was poured into water and rapidly cooled, and then finely pulverized using a L-RUNLE manufactured by Arusu to obtain a glass 7 lift. Each glass 7 Lift Ftap with a composition of 1 was produced by the above method.
唆た別にア#ンナ會有量デフLsで!0XjOx/Jt
am寸v&Oアル々す基板を製作準備した。Even though I was incited to do so, I have a #anna meeting with a differential Ls! 0XjOx/Jt
I prepared an AM size V&O board.
ζO基板上に下記第1表の各組成のガラス7リフトをペ
ースト状にしたものを印刷法で塗布して、乾燥後lコJ
0℃にで焼成して、ダレーズ厚み10*コopamのグ
レーズ基板とした。A paste of Glass 7 Lift with each composition shown in Table 1 below was applied onto the ζO substrate using a printing method, and after drying, it was coated with a paste.
It was fired at 0° C. to obtain a glaze substrate with a Daleze thickness of 10*copam.
上記、製作した各組成のグレーズ基板を下記第2表に熱
膨張係数、熱伝導度1表面抵抗を測定して示した。Table 2 below shows the measured thermal expansion coefficient and thermal conductivity 1 surface resistance of the glazed substrates of each composition manufactured above.
熱膨張係数は各組成Oグレーズにて!−XJ)77mの
試料を製作して測定し、その1IlIilI線の頂点を
屈伏点として示した。Thermal expansion coefficient for each composition O glaze! -XJ) A 77m sample was manufactured and measured, and the peak of the 1IlIilI line was shown as the yield point.
表INO絶lk抵抗は各組成のダレーズ表面にコ個O銀
電極を設けて、エレクト誼メーターにてtoov印加し
JO秒経過後O電極間リーク電流を測定し、それより表
面絶縁抵抗を測定した。Table INO resistance was determined by installing O silver electrodes on the surface of the dale of each composition, applying TOOV with an electric meter, measuring the leakage current between the O electrodes after JO seconds, and then measuring the surface insulation resistance. .
上記第1表Ka記載していないが、請求範囲内o6組成
のグレーズド−にツ建ツクス基板の表両あらさ紘全試料
共動載でa01μm以下で従来比較品Oak!μmK比
べ優れた平滑性を示した。Although not listed in Table 1 above, the surface roughness of a glazed and double-sided substrate with an O6 composition within the claimed range was less than a01 μm when mounted on both surfaces, and the conventional comparison product Oak! It showed superior smoothness compared to μmK.
t*表表両ね)liJ5μm以下で比較品は30μmで
あ夛、tた基板のそjF17σpm/jOW以下で嵐好
な平坦性を有するもの−であった。The comparison product had a liJ of 5 μm or less, while the comparative product had a 30 μm, and the substrate had a good flatness of less than 17σpm/jOW.
グレーズの熱膨張係数はj/−’llx/f’で従来比
献品とあt)差社ないが、耐熱性は屈伏点が7#0〜7
10℃であり、従来比献品の410℃に対: して10
−110℃の高いものとなった。The thermal expansion coefficient of the glaze is j/-'llx/f', which is no different from the conventional product, but the heat resistance is as follows: the yield point is 7#0~7
10℃, compared to 410℃ of the conventional product: 10℃
The temperature was as high as -110°C.
熱伝導率においてはts−Joxiv’であ)、従来比
献品01JxlO’に比べで、アルカリ、 pb。In terms of thermal conductivity, it is ts-Joxiv'), and compared to the conventional comparison product 01JxlO', it is alkali, pb.
がツリーであるに%かかわらず大きく改嵐され前記した
所期OB標値であるg−aooJを達成することが出来
て上記し九表面の平滑性、平坦性O優れたもCとなった
。Although it was a tree, it was greatly modified and the desired OB standard value g-aooJ mentioned above was achieved, and the surface smoothness and flatness O were excellent.
表w#1抗は/4#X//’であ)従来比献品のコx
i /” K比べ絶縁性があり、電気的に安定度O高%
fh%oとなった。Table w#1 resistance is /4#X//') Conventional comparison product Kox
i/” Has better insulating properties than K, and has higher electrical stability O%
It became fh%o.
以上、記述した如く本発明の!レーズド七フィックス基
板は優れた品質のものであ)、7アタシ電す用グレーズ
ド基板、薄膜基板、プリンターヘッド基板等へ使用して
好適なものである。As described above, the present invention! The lased fixed substrate is of excellent quality and is suitable for use in glazed substrates, thin film substrates, printer head substrates, etc.
Claims (1)
/jj−1tモルー2AlsOs 4〜/44ルーを必
須酸分として、この全成分の全組成物が1004ル参で
あるグレーズ組成物をセラ建ツタス!!板上にIk*t
、、焼成して形成したことを特徴とするグレーズド上9
々ツクス基板。 −特許請求0IIH1/IEl屓記載〇七ツ々ツクス基
破は、アル電すまた紘ベリリア基板であることt特徴と
するグレーズドセラ擢ツクス基板。 u) 810m 14〜’l/ 4に−e BaO/
17−コl篭ルー。 ム1m’s 4〜/44ルーを必須酸分として、これに
副成分としてBr010*ルー以下* Bytes 1
層ルー以下、caote*h%以下、にθJ罎ルー以下
O内、1種以上を加えて、全組成物が100モル−であ
るグレーズ組成物t−にう々ックス!1[上に塗布し、
焼成して形成したととを轡愼とするダレーズド−に9セ
ツクス基板。 (ロ)特許請求の範N落J項li!載の竜ツ2ツタスI
II叡は、アル電すt光はぺWリア基板であることt特
徴とするダレーズドセI)1ツクス基板。[Claims] (') 810g 14~? 1 mole e jlgo
/jj-1tMoru2AlsOs 4~/44Ru is an essential acid, and a glaze composition in which the total composition of all components is 1004 Ru is made! ! Ik*t on the board
, Glazed top 9 characterized by being formed by firing
Tsukusu board. - Patent Claim 0IIH1/IEL Description: A glazed ceramic substrate, characterized in that the seven-layer substrate is an aluminum or beryllia substrate. u) 810m 14~'l/ 4-e BaO/
17-Color basket roux. Mu1m's 4~/44 ru as an essential acid, and as a subcomponent Br010*ru or less* Bytes 1
A glaze composition T- in which the total composition is 100 mol is added by adding one or more of the following θJ to the caote*h% or less! 1 [Apply on top,
A 9-sex board is made of a laminated plate formed by firing. (b) Scope of patent claims Ryutsu 2 Tutas I
II is a double-sided board that is characterized by the fact that it is a rear board.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16678081A JPS5867091A (en) | 1981-10-19 | 1981-10-19 | Glazed ceramic board |
US06/814,177 US4634634A (en) | 1981-10-19 | 1985-12-24 | Glaze ceramic base |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16678081A JPS5867091A (en) | 1981-10-19 | 1981-10-19 | Glazed ceramic board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5867091A true JPS5867091A (en) | 1983-04-21 |
JPS6159557B2 JPS6159557B2 (en) | 1986-12-17 |
Family
ID=15837539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16678081A Granted JPS5867091A (en) | 1981-10-19 | 1981-10-19 | Glazed ceramic board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5867091A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5988337A (en) * | 1982-11-13 | 1984-05-22 | Narumi Gijutsu Kenkyusho:Kk | Glaze composition for ceramic substrate |
JPS61114861A (en) * | 1984-11-12 | 1986-06-02 | Hitachi Ltd | Thermosensitive head |
JPS62104772A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Thick-film thermal head |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6453072U (en) * | 1987-09-25 | 1989-03-31 |
-
1981
- 1981-10-19 JP JP16678081A patent/JPS5867091A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5988337A (en) * | 1982-11-13 | 1984-05-22 | Narumi Gijutsu Kenkyusho:Kk | Glaze composition for ceramic substrate |
JPS6343330B2 (en) * | 1982-11-13 | 1988-08-30 | Narumi Gijutsu Kenkyusho Kk | |
JPS61114861A (en) * | 1984-11-12 | 1986-06-02 | Hitachi Ltd | Thermosensitive head |
JPH0582823B2 (en) * | 1984-11-12 | 1993-11-22 | Hitachi Ltd | |
JPS62104772A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Thick-film thermal head |
Also Published As
Publication number | Publication date |
---|---|
JPS6159557B2 (en) | 1986-12-17 |
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