JPS5866331A - 電子ビ−ム露光方法 - Google Patents

電子ビ−ム露光方法

Info

Publication number
JPS5866331A
JPS5866331A JP16523981A JP16523981A JPS5866331A JP S5866331 A JPS5866331 A JP S5866331A JP 16523981 A JP16523981 A JP 16523981A JP 16523981 A JP16523981 A JP 16523981A JP S5866331 A JPS5866331 A JP S5866331A
Authority
JP
Japan
Prior art keywords
electron beam
exposure
wafer
mask
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16523981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6231816B2 (enExample
Inventor
Tateaki Sasaki
佐々木 建昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP16523981A priority Critical patent/JPS5866331A/ja
Publication of JPS5866331A publication Critical patent/JPS5866331A/ja
Publication of JPS6231816B2 publication Critical patent/JPS6231816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP16523981A 1981-10-15 1981-10-15 電子ビ−ム露光方法 Granted JPS5866331A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16523981A JPS5866331A (ja) 1981-10-15 1981-10-15 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16523981A JPS5866331A (ja) 1981-10-15 1981-10-15 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS5866331A true JPS5866331A (ja) 1983-04-20
JPS6231816B2 JPS6231816B2 (enExample) 1987-07-10

Family

ID=15808505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16523981A Granted JPS5866331A (ja) 1981-10-15 1981-10-15 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS5866331A (enExample)

Also Published As

Publication number Publication date
JPS6231816B2 (enExample) 1987-07-10

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