JPS5864704A - Semiconductive mixture - Google Patents

Semiconductive mixture

Info

Publication number
JPS5864704A
JPS5864704A JP16106281A JP16106281A JPS5864704A JP S5864704 A JPS5864704 A JP S5864704A JP 16106281 A JP16106281 A JP 16106281A JP 16106281 A JP16106281 A JP 16106281A JP S5864704 A JPS5864704 A JP S5864704A
Authority
JP
Japan
Prior art keywords
mixture
crosslinking
weight
parts
semiconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16106281A
Other languages
Japanese (ja)
Other versions
JPS6356651B2 (en
Inventor
谷田 光隆
健二 永井
関口 安貞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP16106281A priority Critical patent/JPS5864704A/en
Publication of JPS5864704A publication Critical patent/JPS5864704A/en
Publication of JPS6356651B2 publication Critical patent/JPS6356651B2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、高電圧用の架橋ポリエチレ7 (XLPg)
絶縁ケーブルなどの半導電層として用いて有用な半導電
性混和物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides high voltage crosslinked polyethylene 7 (XLPg)
The present invention relates to semiconducting compounds useful as semiconducting layers in insulated cables and the like.

一般に、高電圧用架橋ポリエチレン絶縁クープルにおい
ては、耐電圧性能を向上させるため、押出などの半導電
層を設けることが普通に行なわれているが、高温時の変
形防止中脆化Il&の低減などの目的で、半導電層をも
架橋させることが望ましいとされている。
Generally, in cross-linked polyethylene insulating couples for high voltage use, it is common practice to provide a semiconducting layer such as extrusion in order to improve withstand voltage performance. For this purpose, it is considered desirable to also crosslink the semiconductive layer.

このような観点に立つて行なわれた従来の架橋半導電層
を南するケーブルの製造方法としては、(イ)半導電性
混和物に架橋剤(例えばocp)を相当量添加するか、
(ロ)めるいは半導電性温和物に架橋助剤(例えばトリ
アリルイソクアヌレート)を添加するか、(/→さらに
は絶縁体中に配合させた架橋剤を半導電層に移行させる
方法などが提案されている。
Conventional methods for manufacturing cables with cross-linked semiconducting layers based on this perspective include (a) adding a considerable amount of a crosslinking agent (for example, OCP) to a semiconducting mixture;
(b) A method of adding a crosslinking agent (for example, triallyl isocanurate) to a mild semiconducting material, or a method of transferring a crosslinking agent blended into an insulator to a semiconducting layer. etc. have been proposed.

しかしながら、前記(イ)の架橋剤添加の方法では半導
電性混和物に架橋剤を混練する工程からケーブルに押出
被覆する工程までの間、架橋剤が架橋反応を起さない温
度以下に保りて作業する必賛があるが、半導電性?11
和物は一般に溶融粘度が高く、混線、押出工程での発熱
が大きい丸め、安定して作業することが甚だ困離で、特
に長尺なケーブルを連続し−Cかつ安定して製造するこ
とは非常に難しかった。また前記(ロ)の架橋助剤添加
の方法では混練時に混和物が高温になると、溶融粘度が
次第に上昇rるため、混和物の溶融粘ばかパラつき、押
出工程で支障を舞たす膚れがありた。この丸め、混練作
業のうち、混和物が高温になり易いカーポン温練と、架
橋助剤混練を別工程とする必要が・Vじ、加工費が上昇
する上に、コンメミネーシ−J/の面からも不利になる
などの問題があった。さらに前記(ハ)の架橋剤移行の
方法では、十分な架橋間を得ることができなかつた。
However, in the method (a) of adding a crosslinking agent, the crosslinking agent must be kept at a temperature below which it does not cause a crosslinking reaction, from the step of kneading the crosslinking agent into the semiconductive mixture to the step of extrusion coating the cable. There is a need to work with it, but is it semiconductive? 11
Generally, cables have a high melt viscosity, and it is extremely difficult to work stably with wire crossing, rolling, which generates a lot of heat during the extrusion process, and it is especially difficult to manufacture long cables continuously and stably. It was very difficult. In addition, in the above method (b) of adding a crosslinking aid, when the temperature of the mixture increases during kneading, the melt viscosity gradually increases, causing the mixture's melt viscosity to become flaky and cause flaking, which can cause problems in the extrusion process. There was. Among these rounding and kneading operations, it is necessary to perform separate processes for carbon warming, where the mixture tends to reach high temperatures, and crosslinking aid kneading. There were also problems such as being at a disadvantage. Furthermore, with the method (c) of transferring the crosslinking agent, it was not possible to obtain sufficient crosslinking distance.

本発明は、上述のような実情に艦みて発明さr’またも
ので、その目的とするところは、特定の配合組成をとる
ことによシ、容易に混練、押出加工、つ:でき、かつ架
橋させた押出などの半導電層を有rル架橋ポリエチレン
絶縁ケーブルを得ることができる半導電性混和物を提供
することにある。
The present invention was invented in view of the above-mentioned circumstances, and its purpose is to facilitate kneading, extrusion processing, and The object of the present invention is to provide a semiconducting mixture that can be applied with a semiconductive layer such as a crosslinked extrusion to obtain a crosslinked polyethylene insulated cable.

かかる本発明の特徴は、ポリオレフィン100重量部に
対し、導電性カーボン10〜10011−を部、架橋助
剤0.05〜5重量部、フェノール系老化防止剤0.0
1〜1重量部を配合した混和物にある。
The characteristics of the present invention are as follows: per 100 parts by weight of polyolefin, 10 to 10011 parts of conductive carbon, 0.05 to 5 parts by weight of crosslinking aid, and 0.0 part of phenolic anti-aging agent.
It is in a mixture containing 1 to 1 part by weight.

ここで使用するポリオレフィンとしては、ポリエチレ/
、エチレン−プロピレン共重合体(EPM)、エチレン
−プロピレン−ジエン三元共電合体(gPDM)、エチ
レン−酢酸ビニル共重合体(gVA)、エチレン−エテ
ルアクリレート (IJAλエチレン−α−オレフィン
共重合体(例えば商品名、タフマー、エラストマーメー
75)およびこれらの混合物を挙げることができろうま
た導電性カーボンの配合部数は、10重量部未満である
と導電性が姶んど得られず、逆に100重量部を越えて
も導電性能は特に向上せず、経済性が悪くなるのみであ
った。すなわち、目的とtろ導電率と経済性のI!点か
ら前記範囲内で任章に定めればよい。また架橋助剤とし
ては有機過酸化物架橋の助剤として閘いられるもので、
マレイミド系化合物、例えばpi、 N−m−7エニレ
ンビスマレイミド、マレイミドなど、オキシム化合物と
してP−キノンジオキシム、PXPジベンゾイルキノン
ジオキシム、ア“リ−にメタアクリレート、ビニールベ
ンゼンなどがある。その他にはトリアリルノアヌレート
、トリアリルイソ7アヌレート、などが1!2用でき、
その配合部数は、o、o”s重電部未満であると目的と
する乗@餐が得られず、逆に5重量部を越えても架橋度
が特に上がらず、鮮済性が悪くなるのみでありた。フェ
ノール系老化防止剤とし゛〔は、4,4′−チオビス(
6−t−ブチル−3−メチルフェノール)、2.6−ジ
ーt−ブチル−4−メチルフェノールなどが使用できる
。そして、その配合型針部数は、0.01重量部未満で
あると配合効果が殆んどなく、逆に1重量部を越えると
所1プルームし、ケーブルとした後、ケーブル費面に浸
出してくる虞れがあった。
The polyolefin used here is polyethylene/
, ethylene-propylene copolymer (EPM), ethylene-propylene-diene ternary copolymer (gPDM), ethylene-vinyl acetate copolymer (gVA), ethylene-ethel acrylate (IJAλ ethylene-α-olefin copolymer) (For example, trade names: Tafmer, Elastomer Me 75) and mixtures thereof.If the amount of conductive carbon is less than 10 parts by weight, no conductivity will be obtained; Exceeding the weight part did not particularly improve the conductive performance and only worsened the economical efficiency.In other words, if it is specified within the above range from the purpose, conductivity, and economical points. Also, as a crosslinking aid, it can be used as an aid for organic peroxide crosslinking.
Maleimide compounds such as pi, N-m-7enylene bismaleimide, maleimide, etc., oxime compounds such as P-quinone dioxime, PXP dibenzoylquinone dioxime, aryl methacrylate, vinylbenzene and the like. In addition, triallyl noanurate, triallyl iso7 anurate, etc. can be used for 1 and 2,
If the number of parts is less than o, o''s parts by weight, the desired stability will not be obtained, and if it exceeds 5 parts by weight, the degree of crosslinking will not particularly increase and the freshness will deteriorate. As a phenolic anti-aging agent, 4,4'-thiobis(
6-t-butyl-3-methylphenol), 2,6-di-t-butyl-4-methylphenol, and the like can be used. If the number of compound needles is less than 0.01 part by weight, there will be almost no effect of the compounding, and if it exceeds 1 part by weight, a plume will occur in some places, and after making it into a cable, there will be a leaching effect on the cable cost. There was a risk that it would come.

以上の配合組成による本発明混和物シこおいて、混線、
押出加工が容易でかつ十分な架橋ばの半導電層を得るこ
とができるのは、次の理由によるものと推論される。
In the mixture of the present invention with the above blending composition, crosstalk,
The reason why extrusion processing is easy and a sufficiently crosslinked semiconductive layer can be obtained is presumed to be due to the following reasons.

ポリオレフィン、導電性カーボン、架橋助剤よりなる組
成では、上述したように混線時に混キロ吻が高温になる
と、粘度が上昇し、混線が困難に’xφ、また粘度のパ
ラつきなどにより押出しがスムーズにいかず、もちろん
架橋も十分航行し、シくなる。このように過酸化物など
の粂礪剤が船台されていない場合で、架橋助剤のみであ
る場合に、一般に架橋反応が起らないはずであるが、混
線工程では、機械的な力または熱などによりポリマー切
断が起り、ラジカルが生成され、この生成されたラジカ
ルを起因として架橋助剤が反応VC11#J与するよう
シこなるから粘痩が上昇するのである。そこでこの組成
の混和物に前記フェノール系の老化防止剤を添加すると
、老化防止剤が前記ラジカルと反応し、架橋助剤の反応
が抑制されることになる。
With a composition consisting of polyolefin, conductive carbon, and a crosslinking aid, as mentioned above, when the temperature of the mixture becomes high during cross-wiring, the viscosity increases, making cross-crossing difficult. Of course, the bridge will be able to travel sufficiently and become damaged. In this way, when there is no crosslinking agent such as peroxide and only a crosslinking agent, no crosslinking reaction should occur, but in the crosslinking process, mechanical force or heat Polymer cleavage occurs due to the above, and radicals are generated, and the generated radicals cause the crosslinking agent to react with VC11#J, resulting in an increase in viscosity. Therefore, when the phenolic anti-aging agent is added to a mixture having this composition, the anti-aging agent reacts with the radicals and the reaction of the crosslinking aid is suppressed.

この抑制効果により、粘度の上昇が抑えられ、スムーズ
な混峠および押出加工が可能とケリ、ま−七このスムー
ズな混練および押出加工により十分な架橋が得られるよ
うになるのである。
This suppressing effect suppresses the increase in viscosity and enables smooth kneading and extrusion processing, making it possible to obtain sufficient crosslinking through smooth kneading and extrusion processing.

次に、本発明の一実施例について述べるっ以Fの表は、
本発明温和物の組成と、比較例として老化防止剤を配合
しないものを示すと同時にいずれも200 C,グラペ
ングプラストグラフにより混線全行ない、その粘y>ロ
ーター回転トルクで測定した結果を示すものである。
Next, the table in F, which describes one embodiment of the present invention, is as follows:
The composition of the mild product of the present invention and a comparative example without anti-aging agent are shown, as well as the results measured at 200 C, grapheng plastograph, where the viscosity y > rotor rotation torque. It is.

上の表から、本発明の半導電性混和物の場合、混線を行
なっても粘ばが上昇せず、−宇であることがわかる。こ
れに対して比較例(・こおいては混練するにつれて粘質
が上昇することがわかる。
From the table above, it can be seen that in the case of the semiconducting mixture of the present invention, the viscosity does not increase even when crosstalk is performed, and the result is -U. On the other hand, it can be seen that in the comparative example (*), the viscosity increases as the mixture is kneaded.

以上の説明から明らかなように本発明の半導電性混和物
によれば、混線などKよっても粘瞳が上昇しないため、
従来のように混−1押出工程時の発熱がなく、また分別
混練などをする必要もなく、VCおいて、安定して作画
することができ、もちろん長尺なケーブルの連続製造も
可能で、かつ加工費も安価で、しかも十分な架橋lcを
有する半導電層會得ることができる。
As is clear from the above explanation, according to the semiconductive mixture of the present invention, the viscous pupil does not increase even when K such as crosstalk occurs.
Unlike conventional methods, there is no heat generation during the mixing-1 extrusion process, and there is no need for separate kneading, etc., and it is possible to stably create images using VC, and of course, continuous production of long cables is also possible. In addition, the processing cost is low, and a semiconducting layer having sufficient crosslinking lc can be obtained.

尚、本発明の半導電性混和物は、押出による半導電層の
他に、テープ状とし、Cvケーブルのジヨイント部の半
導電層に使用し、架橋させた半導電層とすることも可能
である。
In addition to the semiconductive layer produced by extrusion, the semiconductive mixture of the present invention can also be formed into a tape and used as a semiconductive layer at the joint part of a Cv cable to form a crosslinked semiconductive layer. be.

特許出願人 藤倉電線株式会社Patent applicant: Fujikura Electric Wire Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] ポリオレフィン100重量部に対し、導電性カーボン1
0〜100重量部、架橋助剤0.05〜5重量部、フェ
ノール系老化防止剤0.01−1重綾部を配合して表る
ことを特徴とする半導電性混和物。
1 part by weight of conductive carbon per 100 parts by weight of polyolefin
A semiconductive mixture comprising 0 to 100 parts by weight, 0.05 to 5 parts by weight of a crosslinking aid, and 0.01 to 1 parts by weight of a phenolic antioxidant.
JP16106281A 1981-10-12 1981-10-12 Semiconductive mixture Granted JPS5864704A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16106281A JPS5864704A (en) 1981-10-12 1981-10-12 Semiconductive mixture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16106281A JPS5864704A (en) 1981-10-12 1981-10-12 Semiconductive mixture

Publications (2)

Publication Number Publication Date
JPS5864704A true JPS5864704A (en) 1983-04-18
JPS6356651B2 JPS6356651B2 (en) 1988-11-09

Family

ID=15727882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16106281A Granted JPS5864704A (en) 1981-10-12 1981-10-12 Semiconductive mixture

Country Status (1)

Country Link
JP (1) JPS5864704A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956441A (en) * 1982-09-24 1984-03-31 Hitachi Cable Ltd Semiconductive composition
JPS6031539A (en) * 1983-07-29 1985-02-18 Toshiba Corp Electrically conductive organic composition having ptc characteristics
JPS61235444A (en) * 1985-04-10 1986-10-20 Furukawa Electric Co Ltd:The Semiconductive resin composition
JPH05319455A (en) * 1992-05-19 1993-12-03 Yoshiki Tawada Packaging cushion material and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956441A (en) * 1982-09-24 1984-03-31 Hitachi Cable Ltd Semiconductive composition
JPS6031539A (en) * 1983-07-29 1985-02-18 Toshiba Corp Electrically conductive organic composition having ptc characteristics
JPS61235444A (en) * 1985-04-10 1986-10-20 Furukawa Electric Co Ltd:The Semiconductive resin composition
JPH05319455A (en) * 1992-05-19 1993-12-03 Yoshiki Tawada Packaging cushion material and manufacture thereof

Also Published As

Publication number Publication date
JPS6356651B2 (en) 1988-11-09

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