JPS586164A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS586164A
JPS586164A JP56104885A JP10488581A JPS586164A JP S586164 A JPS586164 A JP S586164A JP 56104885 A JP56104885 A JP 56104885A JP 10488581 A JP10488581 A JP 10488581A JP S586164 A JPS586164 A JP S586164A
Authority
JP
Japan
Prior art keywords
type
solid
silicon
amorphous silicon
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56104885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038115B2 (enrdf_load_stackoverflow
Inventor
Zenko Hirose
広瀬　全孝
Kazuhiro Kawajiri
和廣 川尻
Yasusuke Nakajima
庸介 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP56104885A priority Critical patent/JPS586164A/ja
Priority to US06/394,499 priority patent/US4523214A/en
Publication of JPS586164A publication Critical patent/JPS586164A/ja
Publication of JPH038115B2 publication Critical patent/JPH038115B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP56104885A 1981-07-03 1981-07-03 固体撮像装置 Granted JPS586164A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56104885A JPS586164A (ja) 1981-07-03 1981-07-03 固体撮像装置
US06/394,499 US4523214A (en) 1981-07-03 1982-07-02 Solid state image pickup device utilizing microcrystalline and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56104885A JPS586164A (ja) 1981-07-03 1981-07-03 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS586164A true JPS586164A (ja) 1983-01-13
JPH038115B2 JPH038115B2 (enrdf_load_stackoverflow) 1991-02-05

Family

ID=14392631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56104885A Granted JPS586164A (ja) 1981-07-03 1981-07-03 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS586164A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188965A (ja) * 1983-04-11 1984-10-26 Fuji Xerox Co Ltd 原稿読取素子
JPH01194356A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 固体撮像装置
JP2009200104A (ja) * 2008-02-19 2009-09-03 Seiko Epson Corp 光電変換装置及び電気光学装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188965A (ja) * 1983-04-11 1984-10-26 Fuji Xerox Co Ltd 原稿読取素子
JPH01194356A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 固体撮像装置
JP2009200104A (ja) * 2008-02-19 2009-09-03 Seiko Epson Corp 光電変換装置及び電気光学装置

Also Published As

Publication number Publication date
JPH038115B2 (enrdf_load_stackoverflow) 1991-02-05

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