JPS5861637A - 絶縁モ−ルド型半導体装置 - Google Patents

絶縁モ−ルド型半導体装置

Info

Publication number
JPS5861637A
JPS5861637A JP56160209A JP16020981A JPS5861637A JP S5861637 A JPS5861637 A JP S5861637A JP 56160209 A JP56160209 A JP 56160209A JP 16020981 A JP16020981 A JP 16020981A JP S5861637 A JPS5861637 A JP S5861637A
Authority
JP
Japan
Prior art keywords
metal substrate
insulating plate
sub
alpha3
alpha1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56160209A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6326543B2 (enExample
Inventor
Tatsuo Yamazaki
山崎 龍雄
Noritoshi Kotsuji
小辻 宣俊
Toshiki Kurosu
黒須 俊樹
Yoichi Nakajima
中島 羊一
Isao Kojima
小島 勲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP56160209A priority Critical patent/JPS5861637A/ja
Publication of JPS5861637A publication Critical patent/JPS5861637A/ja
Publication of JPS6326543B2 publication Critical patent/JPS6326543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/073
    • H10W72/01308
    • H10W72/07311
    • H10W72/07337
    • H10W72/354
    • H10W72/381
    • H10W72/5363
    • H10W72/884
    • H10W90/734

Landscapes

  • Die Bonding (AREA)
JP56160209A 1981-10-09 1981-10-09 絶縁モ−ルド型半導体装置 Granted JPS5861637A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56160209A JPS5861637A (ja) 1981-10-09 1981-10-09 絶縁モ−ルド型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56160209A JPS5861637A (ja) 1981-10-09 1981-10-09 絶縁モ−ルド型半導体装置

Publications (2)

Publication Number Publication Date
JPS5861637A true JPS5861637A (ja) 1983-04-12
JPS6326543B2 JPS6326543B2 (enExample) 1988-05-30

Family

ID=15710109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56160209A Granted JPS5861637A (ja) 1981-10-09 1981-10-09 絶縁モ−ルド型半導体装置

Country Status (1)

Country Link
JP (1) JPS5861637A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1107310A3 (de) * 1999-12-08 2005-04-27 DaimlerChrysler Rail Systems GmbH Isolationsverbesserung bei Hochleistungs-Halbleitermodulen
EP0921565A3 (en) * 1997-12-08 2005-07-27 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0429945U (enExample) * 1990-07-04 1992-03-10

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0921565A3 (en) * 1997-12-08 2005-07-27 Kabushiki Kaisha Toshiba Package for semiconductor power device and method for assembling the same
EP1107310A3 (de) * 1999-12-08 2005-04-27 DaimlerChrysler Rail Systems GmbH Isolationsverbesserung bei Hochleistungs-Halbleitermodulen

Also Published As

Publication number Publication date
JPS6326543B2 (enExample) 1988-05-30

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