JPS586136B2 - コウデンソウチ - Google Patents

コウデンソウチ

Info

Publication number
JPS586136B2
JPS586136B2 JP47096288A JP9628872A JPS586136B2 JP S586136 B2 JPS586136 B2 JP S586136B2 JP 47096288 A JP47096288 A JP 47096288A JP 9628872 A JP9628872 A JP 9628872A JP S586136 B2 JPS586136 B2 JP S586136B2
Authority
JP
Japan
Prior art keywords
tubular member
inner tubular
wall
wire
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47096288A
Other languages
English (en)
Japanese (ja)
Other versions
JPS4850777A (enExample
Inventor
ジヨフレイ・ウイリアム・シヨーレス
ダビド・ジヨン・ブローレツト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS4850777A publication Critical patent/JPS4850777A/ja
Publication of JPS586136B2 publication Critical patent/JPS586136B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H10W90/753—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Defrosting Systems (AREA)
JP47096288A 1971-09-30 1972-09-27 コウデンソウチ Expired JPS586136B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4566771A GB1401434A (en) 1971-09-30 1971-09-30 Photo-electric devices

Publications (2)

Publication Number Publication Date
JPS4850777A JPS4850777A (enExample) 1973-07-17
JPS586136B2 true JPS586136B2 (ja) 1983-02-03

Family

ID=10438101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47096288A Expired JPS586136B2 (ja) 1971-09-30 1972-09-27 コウデンソウチ

Country Status (4)

Country Link
JP (1) JPS586136B2 (enExample)
DE (1) DE2247845C2 (enExample)
FR (1) FR2154693B1 (enExample)
GB (1) GB1401434A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730495C2 (de) * 1976-07-09 1986-12-04 Honeywell Inc., Minneapolis, Minn. Doppelwandiges Kühlgefäß zur Aufnahme und Kühlung einer strahlungsempfindlichen Detektoranordnung und Verfahren zu seiner Herstellung
US4062107A (en) 1976-07-14 1977-12-13 U.S. Philips Corporation Method of manufacturing infra-red detector
NL7804640A (nl) * 1978-04-28 1979-10-30 Optische Ind De Oude Delft Nv Vacuumdichte, elektrische aansluiting voor de fotoka- thode in een beeldversterkerbuis.
US4178528A (en) * 1978-07-05 1979-12-11 The United States Of America As Represented By The Secretary Of The Army Image intensifier unitube for intensified charge transfer device and method of manufacture
US4178529A (en) * 1978-07-05 1979-12-11 The United States Of America As Represented By The Secretary Of The Army Flip-header and tube base for CTD mounting within an image intensifier
DE3143658A1 (de) * 1981-11-04 1983-05-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Strahlungsempfaenger und verfahren zu seiner herstellung
DE3337194A1 (de) * 1983-10-13 1985-04-25 Telefunken electronic GmbH, 7100 Heilbronn Gehaeuse fuer ein optoelektronisches halbleiterbauelement
DE3823006C2 (de) * 1988-07-07 1994-09-08 Licentia Gmbh Gehäuse für infrarotempfindliche Bauelemente
DE4244480A1 (de) * 1992-12-30 1994-07-07 Bodenseewerk Geraetetech Sensoranordnung mit gekühltem Sensor
US5763885A (en) * 1995-12-19 1998-06-09 Loral Infrared & Imaging Systems, Inc. Method and apparatus for thermal gradient stabilization of microbolometer focal plane arrays
AU1416797A (en) * 1995-12-07 1997-06-27 Diasense, Inc. Array combining many photoconductive detectors in a compact package
CN111238659B (zh) * 2020-01-20 2021-09-07 武汉高芯科技有限公司 一种具有抑制杂散光功能的冷屏及制冷型红外探测器
JP7610666B1 (ja) * 2023-09-07 2025-01-08 浜松ホトニクス株式会社 光検出器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3005970A (en) * 1954-06-08 1961-10-24 Hupp Corp Infra-red sensitive photoconductive cell
US2987686A (en) * 1956-09-21 1961-06-06 Itt Photocells
US3079504A (en) * 1956-12-20 1963-02-26 Frederick L Hutchens Cooling device for infrared detector
US3080542A (en) * 1959-01-02 1963-03-05 Santa Barbara Res Ct Infrared detector and method of manufacture thereof
GB903549A (en) * 1959-12-22 1962-08-15 Hughes Aircraft Co Infrared radiation detector
US3423594A (en) * 1964-03-03 1969-01-21 Anthony G Galopin Photoelectric semiconductor device with optical fiber means coupling input signals to base
US3445659A (en) * 1967-01-09 1969-05-20 Philco Ford Corp Cryogenically cooled radiation detection apparatus
GB1196471A (en) * 1967-04-14 1970-06-24 Associated Semiconductor Mft Improvements in and relating to Photo-Electric Devices

Also Published As

Publication number Publication date
GB1401434A (en) 1975-07-16
JPS4850777A (enExample) 1973-07-17
FR2154693B1 (enExample) 1976-08-13
DE2247845C2 (de) 1983-04-14
DE2247845A1 (de) 1973-04-12
FR2154693A1 (enExample) 1973-05-11

Similar Documents

Publication Publication Date Title
JPS586136B2 (ja) コウデンソウチ
US6043982A (en) Integrated circuit package having a thermoelectric cooling element therein
CA2179052C (en) Integrated silicon vacuum micropackage for infrared devices
US4160308A (en) Optically coupled isolator device and method of making same
EP0089044B1 (en) A semiconductor device having a container sealed with a solder of low melting point
US3341649A (en) Modular package for semiconductor devices
US8748200B2 (en) Method for manufacturing LED package
GB2039144A (en) Semiconductor housing
US4044374A (en) Semiconductor device header suitable for vacuum tube applications
CA1142252A (en) Semiconductor optoelectronic device package
US3187240A (en) Semiconductor device encapsulation and method
US6586877B1 (en) Electron tube
EP0194946A2 (en) Pressurized contact type double gate static induction thyristor
US20210403317A1 (en) Full Symmetric Multi-Throw Switch Using Conformal Pinched Through Via
US6670538B2 (en) Thermal radiation sensor
JP2013186039A (ja) 赤外線検出装置
US6861719B2 (en) Device for detecting three-dimensional electromagnetic radiation and method for making same
JPS6137784B2 (enExample)
US4682021A (en) Header assembly for an intensified charge coupled image sensor
US4874910A (en) High lead density vacuum feedthrough
KR101529543B1 (ko) 멤즈 소자의 진공 패키징 방법
US2965818A (en) Manufacture of semiconductor rectifier devices
JP2010243365A (ja) 赤外線センサ装置の製造方法
JPS6223288B2 (enExample)
US8013453B2 (en) Leadless alignment of a semiconductor chip