JPS5860661A - Dielectric ceramic composition for high frequency - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use.

In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MIC, and the like.

Conventionally, as this type of dielectric porcelain, ZrO□-8n
Oz Ti Oz-based material, Ba, Ti, 0. . ,(
B a, 8 r ) (Z r % T r ) Os-based materials, 13a (7, n, 'ra > o, etc.) are known. These materials have a dielectric constant (εr ) is 20-40, Q is 4000-8000,
It is an excellent material with a temperature coefficient of resonance frequency (τf) of Oppm, 'Q, but recently the frequency range used has become even higher, and accordingly materials with a higher Q value are needed. is required.

Therefore, an object of the present invention is to provide a dielectric ceramic composition that has a higher Q than conventional compositions in a high frequency region.

That is, the gist of this invention is that the general formula Ba
(Zn Ni Ta Nbz) 0772 sv
In the composition represented by /z 3Kxy /2, 0.03≦V≦0.3
3.0.03≦X≦0.33.0≦y≦0.70.0≦
It is characterized by being in the range of 2≦0.70 (r: dashi, v+x+y+z=1).

Hereinafter, this invention will be explained in detail according to examples.

High purity BaC0, Ni01ZnO1Ta205, N
b.

0, and weighed so as to obtain porcelain having the composition shown in Table 1, and wet-mixed the weighed raw materials for 2 hours. Next, calcination was performed at 1200°C for 2 hours, a binder was added, wet mixing was carried out again for 2 hours, dehydrated, and fired at 1200°C for 4 hours to obtain a porcelain sample 7':.

The temperature coefficient (τf) of the dielectric waveform, Q, and resonant frequency at a frequency of 7 GHz was measured for the obtained porcelain sample, and the results are shown in Table 1. Items marked with * in Table 1 are outside the scope of this invention, and all others are within the scope of this invention.

Temperature coefficient (τf) of resonance frequency is +25°C to +85°
It was carried out in the temperature range of C and was determined based on the following formula: 1: value.

τf”−+τr−α Here, τE: Temperature change rate of dielectric constant (6) α: Linear expansion coefficient of ceramic sample v/IJ As is clear from the table, the material according to the present invention exhibits a high dielectric constant. At the same time, τf is also good, and in particular, a value of up to 11,000 has been obtained for Q, which is useful for dielectric resonators and MI
It is possible to provide a high frequency dielectric ceramic useful for applications such as C,1+1 dielectric substrates.

It should be noted that samples having compositions outside the range of this invention (sample numbers 1 to 17) had a large τf and could not be put to practical use.

Patent required - Murata Manufacturing Co., Ltd.

Claims (1)

[Claims] General formula Ba (ZnvNixTa, Nb2) o, /2
, v/. In the composition represented by Z X / 2, 0.03≦
V≦≦0.33.003≦X≦033.0≦y≦0,7
0.0≦2≦0.70 (however, % v+x+y+z=1
) A dielectric ceramic composition for high frequency use, characterized by being in the range of