JPH02164758A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPH02164758A JPH02164758A JP63319019A JP31901988A JPH02164758A JP H02164758 A JPH02164758 A JP H02164758A JP 63319019 A JP63319019 A JP 63319019A JP 31901988 A JP31901988 A JP 31901988A JP H02164758 A JPH02164758 A JP H02164758A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- ceramic
- dielectric constant
- ceramic composition
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 239000000919 ceramic Substances 0.000 title claims abstract description 21
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は誘電体磁器組成物、とくに酸化バリウム(Ba
O)、酸化亜鉛(ZnO)、酸化タンク/L/(Ta2
06)。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to dielectric ceramic compositions, particularly barium oxide (Ba
O), zinc oxide (ZnO), oxidation tank/L/(Ta2
06).
酸化ニッケ7v(NiO)および酸化ニオブ(Nb2o
5)の成分で構成される誘電体共振器用の誘電体磁器組
成物に関するものである。Nickel oxide 7v (NiO) and niobium oxide (Nb2o)
The present invention relates to a dielectric ceramic composition for a dielectric resonator comprising the component 5).
従来の技術
近年、波長が数センチメートル以下のマイクロ波やミリ
波(以下これらをマイクロ波と総称する)を取扱う高周
波回路の技術の進展にともないこの回路を小形化し、あ
わせて全体の価格を低減することが積極的に進められて
いる。これまではこの高周波回路には空胴共振器、アン
テナなどが使用されてきたが、これらの大きさはマイク
ロ波の波長と同程度になるため小形化に対する障害とな
っていた。これを解決するために誘電率の大きい誘′五
体磁器を使用することによって波長そのものを短縮する
方法がとられてきる。従来このような用途に適する誘電
体材料として、たとえばMgTiO3−CaTiO3系
、 MgT 103−Ca T i Oa −L a
203−2T 102系、 J3aO−TiO2系およ
びその一部を他の元素で置換した磁器を使用する場合が
多い。Conventional technology In recent years, with advances in technology for high-frequency circuits that handle microwaves and millimeter waves (hereinafter collectively referred to as microwaves) with wavelengths of several centimeters or less, these circuits have been made smaller and the overall price has been reduced. This is being actively pursued. Until now, cavity resonators, antennas, etc. have been used in these high-frequency circuits, but the size of these devices is comparable to the wavelength of microwaves, which poses an obstacle to miniaturization. In order to solve this problem, a method has been taken to shorten the wavelength itself by using dielectric five-body porcelain having a high dielectric constant. Conventionally, dielectric materials suitable for such uses include, for example, MgTiO3-CaTiO3 system, MgT103-CaTiOa-La
203-2T 102 series, J3aO-TiO2 series, and porcelains in which some of them are replaced with other elements are often used.
発明が解決しようとする課題
上述のこれらの材料は比誘電率が低いとか、誘電体損失
が大きいとか、比誘電率のばらつきが大きかったりある
いは共振周波数の温度安定性が悪いなどの欠点を持って
いる。そして共振周波数の温度係数を変えようとすると
、無負荷時のQが著しく低下するなど実用上問題が多い
。Problems to be Solved by the Invention These materials mentioned above have drawbacks such as low relative permittivity, large dielectric loss, large variation in relative permittivity, and poor temperature stability of resonance frequency. There is. If an attempt is made to change the temperature coefficient of the resonant frequency, there are many practical problems such as a significant drop in the Q under no load.
本発明はこれらの問題点を解決するためになされたもの
であり、比誘電率と無負荷時のQが大きくさらに共振周
波数の温度係数が安定した値をもち用途に応じてこの温
度係数を細かく変化させうる誘電体磁器組成物を提供す
ることを目的とするものである。The present invention has been made to solve these problems, and has a large relative dielectric constant and Q at no load, and a stable temperature coefficient of the resonant frequency, which can be adjusted finely according to the application. The object is to provide a dielectric ceramic composition that can be varied.
課題を解決するだめの手段
上記の目的を達成するため、本発明は
一般式(1−x)Ba(Zn、TaH)03−xB a
(N t、Nb、)03(その成分組成がモル分率で
0〈xく1の範囲にある)で示されることを特徴とする
。Means for Solving the Problems In order to achieve the above-mentioned objects, the present invention is based on the general formula (1-x)Ba(Zn,TaH)03-xB a
(Nt, Nb,)03 (its component composition is in the range of 0<x1) in terms of mole fraction.
作 用
本発明の特徴における組成範囲においては、比誘電率お
よび無負荷時のQが大きいとともに、共振周波数の温度
係数が安定し、しかも、その組成を変化させることによ
シ所望の値に細かく制御することができる。Function: In the composition range according to the characteristics of the present invention, the relative dielectric constant and Q at no load are large, and the temperature coefficient of the resonance frequency is stable, and furthermore, by changing the composition, the desired value can be finely adjusted. can be controlled.
実施例 以下に実施例を示す。Example Examples are shown below.
出発原料には化学的に高純度のB a Co3. Z
no2゜T a 20 a s N iOJ オヨD
Nb2 o5を所定tvm成ニするよう秤量し、めのう
ボールを備えたポリエチレン製のボールミルで純水とと
もに湿式混合した。The starting material is chemically highly purified B a Co3. Z
no2゜T a 20 a s N iOJ OyoD
Nb2o5 was weighed to a predetermined tvm and wet-mixed with pure water in a polyethylene ball mill equipped with an agate ball.
この混合物をボールミル
のち空気中において1 1 00℃の温度で2時間仮に
バインダーとして濃度6チのポリビニールアルコ−)V
溶液を8重量%添加して混合し均質としたのち、32メ
ツシユのふるいを通して整粒した。After ball milling, the mixture was heated in the air at a temperature of 1100°C for 2 hours, and a polyvinyl alcohol (V)V with a concentration of 6% was used as a binder.
After adding 8% by weight of the solution and mixing to make it homogeneous, the mixture was sized through a 32 mesh sieve.
整粒粉体は金型と油圧プレスを用いて成形圧力a o
o Kq/crlで直径13間厚さ約5醪の円板に成形
した。成形体を高純度のアルミナさや鉢の中に入れ、組
成に応じて空気中において1300〜1650℃の範囲
内の温度で2時間保持して焼成し誘電体磁器組成物を得
た。この磁器組成物から直径5IIIm厚さ21の円板
磁器素子を切り出し、誘電体共振器法による測定から共
振周波数と無負荷時のQ(Qu)と比誘電率(εr)を
求めた。共振周波数の温度係数は一30℃から70℃の
範囲で測定し温度係数τfを求めた。共接周波数は10
〜12G−の範囲であった。このようにして得られた結
果を表に示す。なお、表において*印をした試料は本発
明の範囲外の比較例であり、これ以外の試料が本発明の
範囲内の実施例である。The sized powder is molded using a mold and a hydraulic press under a pressure of a
o It was molded into a disk with a diameter of 13 mm and a thickness of about 5 mm using Kq/crl. The molded body was placed in a high-purity alumina sheath and fired in air at a temperature within the range of 1300 to 1650°C for 2 hours depending on the composition to obtain a dielectric ceramic composition. A disk ceramic element with a diameter of 5III m and a thickness of 21 mm was cut out from this ceramic composition, and the resonance frequency, Q (Qu) under no load, and relative dielectric constant (εr) were determined by measurement using the dielectric resonator method. The temperature coefficient of the resonance frequency was measured in the range of -30°C to 70°C, and the temperature coefficient τf was determined. The tangent frequency is 10
It was in the range of ~12G-. The results thus obtained are shown in the table. Note that the samples marked with * in the table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.
表
* 本発明範囲外の比較例
表に示す結果から明らかなように、本発明の範囲内の誘
電体磁器組成物はマイクロ波周波数帯にち・いて比誘電
率を比較的大きい値に保ちながら無11荷時のQが大き
い値を持ち、しかも共振周波数の温度係数が安定した特
性を示している。従って、本発明の誘電体磁器組成物は
発振器や共振器の温度依存性を安定化し共振周波数の温
度係数を細かく制御するのに有用であり、SHF帯での
使用に適した小形で高性能の電子回路部品を作ることが
できる。Table * Comparative examples outside the scope of the present invention As is clear from the results shown in the table, the dielectric ceramic composition within the scope of the present invention maintains a relatively large dielectric constant in the microwave frequency band. The Q when unloaded has a large value, and the temperature coefficient of the resonance frequency exhibits stable characteristics. Therefore, the dielectric ceramic composition of the present invention is useful for stabilizing the temperature dependence of oscillators and resonators and finely controlling the temperature coefficient of the resonant frequency, and is a compact and high-performance material suitable for use in the SHF band. Can make electronic circuit parts.
本発明の組成範囲を限定した理由は、
Ba(NibNb3A)o3量(x)が零のときは比誘
電率およびQuの向上に対する改善効果が認められなく
なるために本発明の範囲から除かれる。また、x =
1のセラミックスではε1とQuと共振周波数の温度係
数の改善効果が得られなくなるために本発明の範囲から
除かれる。The reason why the composition range of the present invention is limited is as follows: When the amount (x) of Ba(NibNb3A)o3 is zero, the improvement effect for improving the dielectric constant and Qu is not recognized, and therefore it is excluded from the scope of the present invention. Also, x =
Ceramics No. 1 cannot achieve the effect of improving the temperature coefficient of ε1, Qu, and resonance frequency, and are therefore excluded from the scope of the present invention.
発明の効果
本発明の誘電体磁器組成物はマイクロ波周波数帯におい
て無負荷時のQが大きく、比誘電率も大きく、さらに共
振周波数の温度係数を組成に応じて細かく変化させるこ
とができるとともに安定した値を持たせることができる
ので発振器や共振器などの温度依存性を安定化するのに
有用である。また、比誘電率が大きくて低損失であるの
でSHF帯での使用に適し、小形で高性能の電子回路部
品を作ることができる。さらに、回路に必要なτfを選
択できるので誘電体共振器を組立てたとき周囲の金属板
による温度特性に与える影響を無くする温度補償作用を
もたせることができる。また、本発明の誘電体磁器組成
物は誘電体共振器のみならずマイクロ波用の基板や誘電
体調整棒などの用途にも有用な素材を提供することがで
き工業的に利用価値の大きいものである。Effects of the Invention The dielectric ceramic composition of the present invention has a large no-load Q in the microwave frequency band, a large relative dielectric constant, and also allows the temperature coefficient of the resonant frequency to be finely changed depending on the composition and is stable. Since it can have a certain value, it is useful for stabilizing the temperature dependence of oscillators and resonators. In addition, since it has a large relative dielectric constant and low loss, it is suitable for use in the SHF band, and small, high-performance electronic circuit components can be made. Furthermore, since it is possible to select τf necessary for the circuit, when the dielectric resonator is assembled, it is possible to provide a temperature compensation effect that eliminates the influence of surrounding metal plates on the temperature characteristics. In addition, the dielectric ceramic composition of the present invention can provide a material useful not only for dielectric resonators but also for microwave substrates, dielectric adjustment rods, etc., and has great industrial utility value. It is.
Claims (1)
O_3−xBa(Ni_1_/_3Nb_2_/_3)
O_3(その成分組成がモル分率で0<x<1の範囲に
ある)で示されることを特徴とする誘電体磁器組成物。[Claims] General formula (1-x) Ba (Zn_1_/_3Ta_2_/_3)
O_3-xBa(Ni_1_/_3Nb_2_/_3)
A dielectric ceramic composition characterized in that it is represented by O_3 (its component composition is in the range of 0<x<1 in terms of mole fraction).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63319019A JPH02164758A (en) | 1988-12-16 | 1988-12-16 | Dielectric ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63319019A JPH02164758A (en) | 1988-12-16 | 1988-12-16 | Dielectric ceramic composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02164758A true JPH02164758A (en) | 1990-06-25 |
Family
ID=18105599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63319019A Pending JPH02164758A (en) | 1988-12-16 | 1988-12-16 | Dielectric ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02164758A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5860661A (en) * | 1981-10-07 | 1983-04-11 | 株式会社村田製作所 | Dielectric ceramic composition for high frequency |
JPS63222065A (en) * | 1987-03-11 | 1988-09-14 | 日揮株式会社 | Dielectric ceramic composition for high frequency |
-
1988
- 1988-12-16 JP JP63319019A patent/JPH02164758A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5860661A (en) * | 1981-10-07 | 1983-04-11 | 株式会社村田製作所 | Dielectric ceramic composition for high frequency |
JPS63222065A (en) * | 1987-03-11 | 1988-09-14 | 日揮株式会社 | Dielectric ceramic composition for high frequency |
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