JPS58181767A - High frequency dielectric ceramic composition - Google Patents
High frequency dielectric ceramic compositionInfo
- Publication number
- JPS58181767A JPS58181767A JP57064512A JP6451282A JPS58181767A JP S58181767 A JPS58181767 A JP S58181767A JP 57064512 A JP57064512 A JP 57064512A JP 6451282 A JP6451282 A JP 6451282A JP S58181767 A JPS58181767 A JP S58181767A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- dielectric ceramic
- ceramic composition
- frequency dielectric
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
この発明は高周波用の誘電体磁祷組成物に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric magnetic composition for high frequencies.
マイクロ波やミリ波などの高周波領域にお（へ゛Ｃ誘′
蝋体磁器は誘電体共損器やＭＩＣ用誘電体域板スミに広
く伺用され゛〔いる。In high frequency areas such as microwaves and millimeter waves (
Wax porcelain is widely used in dielectric loss devices and dielectric area plates for MICs.
従来、この種の誘電体磁器とし′〔Ｆｉ、ＺｒＯ２−１
３ｎｏ、−Ｔｉ０１系材料、Ｂａ１Ｔｉ、０１． 、
（Ｂａ、 ５ｒ）（Ｚｎ、Ｔ１）Ｏ，系材料、 Ｂａ（
Ｚｎ、 Ｔａ） 系材料などが知られてＩＱる。これ
らの材料はマイクロ波帯でＤＩ！１１１Ｅ寧（ｇ）が２
０〜４０．９が４０００〜８０００゜共振周波数の温度
係数（τ／）が０ｐｐＨ／ｌ：の特性を有する優秀な材
料であるが、最近では使用する同波数領域がさらに高く
なつ・【きており、これに対応し′（さらに高いＱｌｉ
を有する材料が要求されている。Conventionally, this type of dielectric porcelain' [Fi, ZrO2-1
3no, -Ti01-based material, Ba1Ti, 01. ,
(Ba, 5r) (Zn, T1) O, based material, Ba(
Zn, Ta) based materials are known and have high IQ properties. These materials are DI in the microwave band! 111E Ning (g) is 2
0 to 40.9 is an excellent material with a temperature coefficient (τ/) of 0 ppH/l at a resonance frequency of 4000 to 8000°, but recently the wave number range used has become even higher. and corresponds to this (higher Qli
There is a demand for materials with
し九がって、この発明は高周波ＷＡ城で従来にくらべて
高（へｑを有する誘電体磁５１１１成物を提供すること
を目的とする。Therefore, it is an object of the present invention to provide a dielectric magnetic 5111 product having a higher q than the conventional one in high frequency WA.
すなわち、この発明の要旨とするところは、一般式Ｂ”
” ”Ｘ Ｚｎ７ ” ’ＩＩ ）Ｏｌ ／＊ −Ｘ
／ｌ−＊ ７／ｍ で表ワサレル組成に＆ｍて、ａ０２
≦Ｘ≦ＣＬ１３．α２８≦ｙ≦１ｌＳＳ、 （Ｌ５９≦
１≦ＣＬ６５（ただし、ｘ＋１＋震＝１）の範囲にある
ものを主成分とし、これＫ ８１０゜をα１〜５．０モ
ル慢添加含有しＣいることを特徴とするものである。That is, the gist of this invention is that the general formula B''
” ”X Zn7 ” 'II)Ol /* -X
/l-* 7/m to the surface wasalel composition &m, a02
≦X≦CL13. α28≦y≦1lSS, (L59≦
It is characterized in that the main component is a substance in the range of 1≦CL65 (where x+1+earthquake=1), and K810° is added at a molar ratio of α1 to 5.0.
以下、この発明を実施例に従ってｎＭＪＫ説明する。Hereinafter, this invention will be explained according to examples.
高純度のＢａＣ０，、ＺｒＯ２，ＺｎＯ，Ｔｈ２０６．
Ｅｌｉｏ、を用−、＠１表に示す組成からなる磁器が
得られるように秤量し、秤量原料を２時間湿式混合し九
。次−八で１２０ＣＩで２時間仮焼を行−＾、さらにバ
インダを加え゛Ｃ２時間湿式温合し、脱水、整粒を行つ
九、得られ九粉末を２００ ＯＮｙ／ｃｐｈ”の圧力で
１２ｍφｘ６’ｕｔの寸法からなる円板に成形し。High purity BaC0, ZrO2, ZnO, Th206.
Elio, was weighed so as to obtain porcelain having the composition shown in Table 1, and the weighed raw materials were wet mixed for 2 hours. Next, perform calcination for 2 hours at 120 CI in step 8, add a binder, wet heat for 2 hours, dehydrate, and size the powder. Form into a disc with dimensions of 'ut.
１４５０υ、４時間の条件で焼成して磁器試料を得々。Porcelain samples were obtained by firing at 1450υ for 4 hours.
得られた磁器試料につ層て、周波数７ＧＨＩＩＶＣ′ｓ
？ける誘電率（ｔ）、 Ｑおよび共振周波数の温度係数
（τｆ）を測定し、その結果を第１表に示しな、第１表
中※印はこの発明範囲外のものであり、それ以外はすべ
てこの発明範囲内のものである。The obtained porcelain sample was layered with a frequency of 7GHIIVC's.
? The dielectric constant (t), Q, and temperature coefficient (τf) of the resonant frequency were measured, and the results are shown in Table 1. In Table 1, the * marks are outside the scope of this invention, and the others are All are within the scope of this invention.
第１図はこの発明にかかる組成のうち、ＺｒＯ，。FIG. 1 shows ZrO among the compositions according to the present invention.
ＺｎＯ，Ｔａｇ、／、 ｌＣつ１へて組成範囲を示した
ものであり１図中の番号は第１表の試料番号と一致する
。The composition ranges are shown for ZnO, Tag, /, and 1C, and the numbers in Figure 1 correspond to the sample numbers in Table 1.
第 １ 表
共振鴫波数の温度係数（τｌ）は＋２５ｔ−−＋ａｓｔ
のｉ！変範囲で行−へ、次式にもとづいて求め喪値であ
る。Table 1 The temperature coefficient (τl) of the resonant wave number is +25t--+ast
i! The mourning value is calculated based on the following formula in the variable range.
ｒｌ＝−イτ −ａ
ζ
ここで、 ｇ：誘電率（ε）の温度変化率α：磁器試料
の＠膨張率
１１表から明らかなように、この発明にかかるものは、
高覧へ誘電率を示すとともにτＩも良好であり、特ＫＱ
につ１へては最高１４４００もの値を示すものが得られ
ておに、高周波領域にお１＾て誘電体共振器やＭＩＣ用
誘電体基板などの用途に有用な高萄波用の誘電体磁器を
提供することができる。rl=−iτ −a ζ Here, g: Temperature change rate of dielectric constant (ε) α: @Expansion coefficient of porcelain sample As is clear from Table 11, the present invention is as follows:
In addition to showing a good dielectric constant, the τI is also good, and the special KQ
First, we obtained a dielectric material with a maximum value of 14,400, which makes it a dielectric material for high frequency waves that is useful for applications such as dielectric resonators and dielectric substrates for MIC in the high frequency region. Porcelain can be provided.
なお、この発明範囲外の組成（試料番号１，５゜６．１
０，１４，１８，２２，２６〜３１）のものはｑが小さ
いか、ある−へはτＩが太き（＾か、焼結が不可能なも
のであ）、実用に供し得な（＾ものである。In addition, the composition outside the scope of this invention (sample number 1,5゜6.1
0, 14, 18, 22, 26 to 31) have a small q or a large τI (or something that cannot be sintered) and cannot be put to practical use (^ It is something.
ま九、８１０．の添加効果はＱを高めることにあるが、
０．１モルチ未満では添加効果が現われず、５．０毫ル
ーを越えるとｑが低下する。Maku, 810. The effect of adding is to increase Q, but
If the amount is less than 0.1 mole, the addition effect will not appear, and if it exceeds 5.0 mole, the q will decrease.
第１図はこの発明にかかる組成のうち、 Ｚｒ０１゜Ｚ
ｎＯ，τａＯｉ／ｓＫつ一＾て組成範囲を示し九三元図
である。
特許出願人
株式会社村田製作所Figure 1 shows Zr01゜Z among the compositions according to this invention.
It is a nine-dimensional diagram showing the composition range of nO and τaOi/sK. Patent applicant Murata Manufacturing Co., Ltd.
Claims (1)
／！−Ｘ／１ ｍｙ／ｌで表わされる組成にお１＾て、
α０２≦Ｘ≦０．１３．０．２８≦ｙ≦０．３５． １
５９≦２≦α６５（九だし、Ｘ＋７十Ｍ＝１）の範囲に
あるものを主成分とし、これＫＳｌｏ、を０１〜５０モ
ル４添加含有し゛〔（＾ることを特徴とする高周波用誘
電体磁器組成物。[Claims] (〇 General formula “ ” zrXz” 7 T' H)Ot
/! -X/1 my/l composition 1^,
α02≦X≦0.13.0.28≦y≦0.35. 1
A dielectric material for high frequency, characterized in that the main component is a substance in the range of 59≦2≦α65 (9 dashi, Porcelain composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57064512A JPS58181767A (en) | 1982-04-16 | 1982-04-16 | High frequency dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57064512A JPS58181767A (en) | 1982-04-16 | 1982-04-16 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58181767A true JPS58181767A (en) | 1983-10-24 |
| JPS6236984B2 JPS6236984B2 (en) | 1987-08-10 |
Family
ID=13260326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57064512A Granted JPS58181767A (en) | 1982-04-16 | 1982-04-16 | High frequency dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58181767A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01123488A (en) * | 1987-11-07 | 1989-05-16 | Nikko Kk | Dielectric material |
-
1982
- 1982-04-16 JP JP57064512A patent/JPS58181767A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01123488A (en) * | 1987-11-07 | 1989-05-16 | Nikko Kk | Dielectric material |
| JPH054942B2 (en) * | 1987-11-07 | 1993-01-21 | Nikko Kk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236984B2 (en) | 1987-08-10 |
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