JPH0548563B2 - - Google Patents
Info
- Publication number
- JPH0548563B2 JPH0548563B2 JP60298378A JP29837885A JPH0548563B2 JP H0548563 B2 JPH0548563 B2 JP H0548563B2 JP 60298378 A JP60298378 A JP 60298378A JP 29837885 A JP29837885 A JP 29837885A JP H0548563 B2 JPH0548563 B2 JP H0548563B2
- Authority
- JP
- Japan
- Prior art keywords
- value
- frequency
- dielectric
- composition
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Description
＜産業上の利用分野＞
この発明は高周波用の誘電体磁器組成物に関す
るものである。
＜従来の技術＞
従来からマイクロ波やミリ波などの高周波領域
において、誘電体磁器は誘電体共振器やMIC用
誘電体基板などに広く利用されている。
この場合、Ｑ値が高くかつ共振周波数の温度係
数（τf）がほぼOppm／℃の特性をもつものが使
用されている。例えばＱが高いものとしては、特
開昭58−45155号に開示されている一般式、Ba
（ZrxZnyTaz）O7/2-x/2-3y/2で表わされる組成にお
いて、0.02≦ｘ≦0.13、0.28≦ｙ≦0.33、0.59≦ｚ
≦0.65、（但し、ｘ＋ｙ＋ｚ＝１）の範囲にある
ことを特徴とする誘電体磁器組成物や、特開昭58
−60661号に開示されている一般式Ba（ZnvNix
TayNbz）O7/2-3v/2-3x/2で表わされる組成におい
て、0.03≦ｖ≦0.33、0.03≦ｘ≦0.33、０≦ｙ≦
0.70、０≦ｚ≦0.70（但し、ｖ＋ｘ＋ｙ＋ｚ＝１）
の範囲にあることを特徴とする誘電体磁器組成物
が知られている。
そして、前者のBa（ZrZnTa）Ｏを材料とした
ものは、マイクロ波帯である7GHzでＱ値が9100
（但し、共振周波数の温度係数（τf）＝1ppm／℃）
であり、後者のBa（ZnNiTaNb）Ｏを材料とし
たものは、Ｑ値が10300（但し、共振周波数の温度
係数（τf）＝0ppm／℃）である。
＜発明が解決しようとする問題点＞
しかし、最近では使用する周波数領域がさらに
高くなつてきており、これに対応してさらに高い
Ｑ値をもつ材料が要求されている。
従つて、この発明の主たる目的は、高周波領域
で従来に比べて高いＱ値を有する誘電体磁器組成
物を提供することである。
＜問題点を解決するための手段＞
この発明は一般式Ba（ZrxZnyNizTauNbv）
O7/2-x/2-3y/2-3z/2で表わされる組成において、0.01
≦ｘ≦0.06、0.28≦ｙ≦0.33、0.01≦ｚ≦0.05、
0.52≦ｕ≦0.65、０≦ｖ≦0.13（但し、ｘ＋ｙ＋ｚ
＋ｕ＋ｖ＝１）の範囲にあり、かつ（Ni1-wCow）
と記したとき０≦ｗ≦1.0の範囲でNiがCoで置換
されるていることを特徴とする高周波用誘電体磁
器組成物である。
＜作用＞
この発明によれば、例えばマイクラ波帯でのＱ
値が従来より高く、１〜10GHz帯からさらに高い
10〜50GHz帯までの使用が可能であり、しかも共
振周波数の温度係数も良好で、高い誘電率を有す
る高周波用誘電体磁器組成物が得られるのであ
る。＜実施例＞
以下、実施例によりこの発明を詳細に説明す
る。
高純度のBaCO3、ZrO2、ZnO、NiO、Ta2O5、
Nb2O5、CO2O3を用い、第１表に示す組成からな
る磁器が得られるように秤量し、秤量原料を２時
間湿式混合した。
次いで、1200℃で２時間仮焼し、さらにバイン
ダを加えて再び２時間湿式混合し、脱水、整粒を
行なつた。このようにして得られた粉末を2000
Kg／cm2の圧力で直径12mm、厚さ６mmの寸法からな
る円板に成形し、1550℃で４時間焼成して磁器試
料を得た。
この磁器試料について、周波数7GHzにおける
誘電率（εr）、Ｑ値および共振周波数の温度係数
（τf）を測定した。その結果は第１表に示した。
第１表中の＊印のものはこの発明の範囲外のもの
であり、それ以外はすべてこの発明の範囲内のも
のである。
<Industrial Application Field> This invention relates to a dielectric ceramic composition for high frequency use. <Prior Art> Dielectric ceramics have been widely used in dielectric resonators, dielectric substrates for MICs, etc. in high frequency regions such as microwaves and millimeter waves. In this case, a material having a high Q value and a temperature coefficient (τf) of the resonance frequency of approximately Oppm/° C. is used. For example, the general formula disclosed in JP-A No. 58-45155, Ba
(Zr x Zn y Ta z ) O In the composition expressed as 7/2-x/2-3y/2 , 0.02≦x≦0.13, 0.28≦y≦0.33, 0.59≦z
≦0.65, (however, x+y+z=1), and JP-A-58
−60661, the general formula Ba(Zn v Ni x
Ta y Nb z ) O In the composition expressed as 7/2-3v/2-3x/2 , 0.03≦v≦0.33, 0.03≦x≦0.33, 0≦y≦
0.70, 0≦z≦0.70 (however, v+x+y+z=1)
Dielectric ceramic compositions are known that are characterized in that they are in the following range. The former material made of Ba(ZrZnTa)O has a Q value of 9100 at 7GHz, which is the microwave band.
(However, temperature coefficient of resonance frequency (τf) = 1ppm/℃)
The latter one made of Ba(ZnNiTaNb)O has a Q value of 10,300 (temperature coefficient of resonance frequency (τf)=0 ppm/° C.). <Problems to be Solved by the Invention> However, recently, the frequency range used has become even higher, and there is a corresponding demand for materials with even higher Q values. Therefore, the main object of the present invention is to provide a dielectric ceramic composition that has a higher Q value in a high frequency region than conventional ones. <Means for solving the problems> This invention uses the general formula Ba(Zr x Zn y Ni z Ta u Nb v )
In the composition expressed as O 7/2-x/2-3y/2-3z/2 , 0.01
≦x≦0.06, 0.28≦y≦0.33, 0.01≦z≦0.05,
0.52≦u≦0.65, 0≦v≦0.13 (however, x+y+z
+u+v=1) and (Ni 1-w Co w )
This is a dielectric ceramic composition for high frequency use, characterized in that Ni is replaced with Co in the range of 0≦w≦1.0. <Function> According to the present invention, for example, Q in the microwave band
The value is higher than before, and even higher from the 1 to 10 GHz band.
A high-frequency dielectric ceramic composition can be obtained that can be used in the 10 to 50 GHz band, has a good temperature coefficient of resonance frequency, and has a high dielectric constant. <Examples> The present invention will be described in detail below using examples. High purity BaCO3 , ZrO2 , ZnO, NiO, Ta2O5 ,
Nb 2 O 5 and CO 2 O 3 were weighed so as to obtain porcelain having the composition shown in Table 1, and the weighed raw materials were wet mixed for 2 hours. Next, the mixture was calcined at 1,200° C. for 2 hours, and a binder was added and wet mixed again for 2 hours, followed by dehydration and sizing. The powder thus obtained is 2000
It was molded into a disk with a diameter of 12 mm and a thickness of 6 mm under a pressure of Kg/cm 2 and fired at 1550° C. for 4 hours to obtain a porcelain sample. For this ceramic sample, the dielectric constant (ε r ), Q value, and temperature coefficient of resonance frequency (τf) at a frequency of 7 GHz were measured. The results are shown in Table 1.
Those marked with * in Table 1 are outside the scope of this invention, and all others are within the scope of this invention.
【表】
なお、共振周波数の温度係数（τf）と誘電率の
温度変化率（τ〓）および磁器試料の線膨脹率αと
の間には次式の関係がある。
τf＝−１／2τ〓−α
この発明の高周波用誘電体磁器における組成範
囲を限定した理由は次の通りである。
(1) ｘ＜0.01では焼結しない。またｘ＞0.06では
Ｑ値が下がり、好ましくない（試料番号16参
照）。
(2) ｙ＜0.28またはｙ＞0.33では焼結しない。
(3) ｚ＜0.01では焼結しない（試料番号15参照）。
また、ｚ＞0.05ではＱ値が下がり、好ましくな
い（試料番号13参照）。
(4) ｕ≦0.52またはｕ＞0.65では焼結しない。
(5) ｖ≧0.13ではＱ値が下がる（試料番号14参
照）。
＜発明の効果＞
上記のように、この発明では高い誘電体率を示
すとともに、Ｑ値については共振周波数の温度係
数τf＝1ppm／℃で17500もの値を示すので従来に
比べて1.7倍以上もＱ値の高い高周波用誘電体磁
器を得ることができるのである。[Table] Note that there is a relationship between the temperature coefficient of resonance frequency (τf), the temperature change rate of dielectric constant (τ〓), and the linear expansion coefficient α of the ceramic sample as shown in the following equation. τf=−1/2τ〓−α The reason for limiting the composition range of the high frequency dielectric ceramic of the present invention is as follows. (1) No sintering when x<0.01. Moreover, when x>0.06, the Q value decreases, which is not preferable (see sample number 16). (2) No sintering when y<0.28 or y>0.33. (3) No sintering when z<0.01 (see sample number 15).
Furthermore, when z>0.05, the Q value decreases, which is not preferable (see sample number 13). (4) No sintering when u≦0.52 or u>0.65. (5) When v≧0.13, the Q value decreases (see sample number 14). <Effects of the Invention> As mentioned above, the present invention exhibits a high dielectric constant, and the Q value exhibits a value of 17,500 at the temperature coefficient of resonance frequency τf = 1 ppm/°C, which is more than 1.7 times that of the conventional method. This makes it possible to obtain high-frequency dielectric ceramics with a high Q value.
Claims (1)
される組成において、0.01≦ｘ≦0.06、0.28≦ｙ
≦0.33、0.01≦ｚ≦0.05、0.52≦ｕ≦0.65、０≦ｖ
≦0.13（但し、ｘ＋ｙ＋ｚ＋ｕ＋ｖ＝１）の範囲
にあり、かつNiがCoによつて（Ni1-wCow）と表
現したとき、０≦ｗ≦1.0の範囲で置換されてい
ることを特徴とする高周波用誘電体磁器組成物。[Claims] 1 In the composition represented by the general formula Ba(Zr x Zn y Ni z Ta u Nb v )O 7/2-x/2-3y/2-3z/2 , 0.01≦x≦0.06, 0.28≦y
≦0.33, 0.01≦z≦0.05, 0.52≦u≦0.65, 0≦v
≦0.13 (however, x+y+z+u+v=1), and Ni is replaced by Co in the range of 0≦w≦1.0 when expressed as (Ni 1-w Co w ). A dielectric ceramic composition for high frequency use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60298378A JPS62157608A (en) | 1985-12-29 | 1985-12-29 | Radio frequency dielectric porcelain compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60298378A JPS62157608A (en) | 1985-12-29 | 1985-12-29 | Radio frequency dielectric porcelain compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62157608A JPS62157608A (en) | 1987-07-13 |
| JPH0548563B2 true JPH0548563B2 (en) | 1993-07-21 |
Family
ID=17858916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60298378A Granted JPS62157608A (en) | 1985-12-29 | 1985-12-29 | Radio frequency dielectric porcelain compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62157608A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4877069B2 (en) * | 2007-05-24 | 2012-02-15 | 株式会社デンソー | Boiling cooler |
-
1985
- 1985-12-29 JP JP60298378A patent/JPS62157608A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62157608A (en) | 1987-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |