JPS6054900B2 - Dielectric ceramic composition for high frequency - Google Patents

Dielectric ceramic composition for high frequency

Info

Publication number
JPS6054900B2
JPS6054900B2 JP56143295A JP14329581A JPS6054900B2 JP S6054900 B2 JPS6054900 B2 JP S6054900B2 JP 56143295 A JP56143295 A JP 56143295A JP 14329581 A JP14329581 A JP 14329581A JP S6054900 B2 JPS6054900 B2 JP S6054900B2
Authority
JP
Japan
Prior art keywords
high frequency
dielectric ceramic
ceramic composition
dielectric
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56143295A
Other languages
Japanese (ja)
Other versions
JPS5845156A (en
Inventor
健弘 鴻池
博 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP56143295A priority Critical patent/JPS6054900B2/en
Publication of JPS5845156A publication Critical patent/JPS5845156A/en
Publication of JPS6054900B2 publication Critical patent/JPS6054900B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 この発明は高周波用の誘電体磁器組成物に関するものて
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use.

マイクロ波やミリ波などの高周波領域において、誘電体
磁器は誘電体共振器やMIC用誘電体基板などに広く利
用されている。
In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MIC, and the like.

従来、この種の誘電体磁器としては、ZrO。Conventionally, ZrO has been used as this type of dielectric ceramic.

一SnO2−TiO2系材料、Ba2Ti9O2o、(
Ba、Br)(Zr、Ti)O。系材料、Ba(Zn、
Ta)O。系材料などが知られている。これらの材料は
マイクロ波帯での誘電率(Er)が20〜40、Qが4
000〜8000、共振周波数の温度係数(Tf)が0
pμm/℃の特性を有する優秀な材料であるが、最近て
は使用する周波数領域がさらに高くなつてきており、こ
れに対応してさらに高いQ値を有する材料が要求されて
いる。したがつて、この発明は高周波領域で従来にくら
べて高いQを有する誘電体磁器組成物を提供することを
目的とする。
-SnO2-TiO2-based material, Ba2Ti9O2o, (
Ba,Br)(Zr,Ti)O. based materials, Ba(Zn,
Ta)O. Materials such as these are known. These materials have a dielectric constant (Er) of 20 to 40 and a Q of 4 in the microwave band.
000 to 8000, temperature coefficient (Tf) of resonance frequency is 0
Although it is an excellent material with a characteristic of pμm/°C, recently, the frequency range in which it is used has become higher, and a material with an even higher Q value is required. Therefore, it is an object of the present invention to provide a dielectric ceramic composition that has a higher Q in the high frequency region than conventional compositions.

すなわち、この発明の要旨とするところは、一般式 B
a(Sn、Zn、Ta2)O、12−、10−、10で
表わされる組成において、0.02≦X≦0.13、0
.28≦y≦0.33、0.59≦z≦0.65(ただ
し、x+y+z=1)の範囲にあることを特徴とするも
のである。
That is, the gist of this invention is that the general formula B
In the composition represented by a(Sn, Zn, Ta2)O, 12-, 10-, 10, 0.02≦X≦0.13, 0
.. It is characterized by being in the range of 28≦y≦0.33, 0.59≦z≦0.65 (however, x+y+z=1).

以下、この発明を実施例に従つて詳細に説明する。高純
度のBaC0a9SnO、9ZnO9Ta2O5を用い
、第1表に示す組成からなる磁器が得られるように秤量
し、秤量原料を2時間湿式混合した。
Hereinafter, this invention will be explained in detail according to examples. High purity BaC0a9SnO and 9ZnO9Ta2O5 were weighed to obtain porcelain having the composition shown in Table 1, and the weighed raw materials were wet mixed for 2 hours.

次いで、1200℃で2時間仮焼を行い、さらにバイン
ダを加えて再び2時間湿式混合し、脱水、整粒を行つた
。得られた粉末を2000に9/a1の圧力で12wn
φ×6Tfgnをの寸法から円板に成形し、1450℃
、4時間の条件で焼成して磁器試料を得た。得られた磁
器試料について、周波数7GH2における誘電率E、Q
)および共振周波数の温度係数Tfを測定し、その結果
を第1表に示した。
Next, calcination was performed at 1200° C. for 2 hours, and a binder was added and wet-mixed again for 2 hours, followed by dehydration and sizing. The obtained powder was heated to 2000 to 12wn at a pressure of 9/a1.
φ×6Tfgn was formed into a disk from the dimensions and heated at 1450°C.
, 4 hours to obtain a porcelain sample. Regarding the obtained porcelain sample, the dielectric constants E and Q at a frequency of 7GH2
) and the temperature coefficient Tf of the resonance frequency were measured, and the results are shown in Table 1.

第1表中※印はこの発明範囲外のものであり、それ以外
はすべてこの発明範囲内のものである。また第1図はこ
の発明にかかる組成のうち、SnO2、ZnO、Ta0
5I2について組成範囲を示したものであり、図中の試
料番号は第1表の試料番号Iと一致する。
Items marked with * in Table 1 are outside the scope of this invention, and all others are within the scope of this invention. Furthermore, FIG. 1 shows SnO2, ZnO, Ta0 among the compositions according to the present invention.
The composition range of 5I2 is shown, and the sample number in the figure corresponds to sample number I in Table 1.

第1表 共振周波数の温度係数τfは+25℃〜+85℃の温度
範囲で行い、次式にもとづいて求めた値である。
The temperature coefficient τf of the resonance frequency in Table 1 is a value determined in the temperature range of +25°C to +85°C based on the following equation.

1J^1bdW艷!鳴 ここで、τε:誘電率εの温度変化率 α :磁器試料の線膨脹率 第1表から明らかなように、この発明にかかるものは、
高い誘電率を示すとともにτfも良好であり、特にQに
ついては最高13700もの値を示すものが得られてお
り、高周波領域において、誘電体共振器や■C用誘電体
基板などの用途に有用な高周波用の誘電体磁器を提供す
ることができる。
1J^1bdW艷! Here, τε: Temperature change rate of dielectric constant ε α: Linear expansion coefficient of porcelain sample As is clear from Table 1, the present invention is as follows:
In addition to exhibiting a high dielectric constant, it also has a good τf, and in particular, a maximum Q value of 13,700 has been obtained, making it useful for applications such as dielectric resonators and dielectric substrates for ■C in the high frequency region. Dielectric ceramics for high frequencies can be provided.

なお、この発明範囲外の組成(試料番号7〜9)のもの
は、焼結が不可能なものやτfが大きく、実用には供し
得ないものである。
It should be noted that samples having compositions outside the scope of the present invention (sample numbers 7 to 9) cannot be sintered or have a large τf, and cannot be put to practical use.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明にかかる組成のうち、 SnO2,ZrlO,TaO5l2についての組成範囲
を示した三元図である。
FIG. 1 is a ternary diagram showing the composition ranges of SnO2, ZrlO, and TaO5l2 among the compositions according to the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1 一般式Ba(Sn_xZn_yTa_z)O_7/
_2_−_x/_2_−_3_y/_2で表わされる組
成において、0.02≦x≦0.13、0.28≦y≦
0.33、0.59≦z≦0.65(ただし、x+y+
z=1)の範囲にあることを特徴とする高周波用誘電体
磁器組成物。
1 General formula Ba(Sn_xZn_yTa_z)O_7/
In the composition represented by _2_-_x/_2_-_3_y/_2, 0.02≦x≦0.13, 0.28≦y≦
0.33, 0.59≦z≦0.65 (however, x+y+
A dielectric ceramic composition for high frequency use, characterized in that z is in the range of 1).
JP56143295A 1981-09-10 1981-09-10 Dielectric ceramic composition for high frequency Expired JPS6054900B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56143295A JPS6054900B2 (en) 1981-09-10 1981-09-10 Dielectric ceramic composition for high frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56143295A JPS6054900B2 (en) 1981-09-10 1981-09-10 Dielectric ceramic composition for high frequency

Publications (2)

Publication Number Publication Date
JPS5845156A JPS5845156A (en) 1983-03-16
JPS6054900B2 true JPS6054900B2 (en) 1985-12-02

Family

ID=15335408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56143295A Expired JPS6054900B2 (en) 1981-09-10 1981-09-10 Dielectric ceramic composition for high frequency

Country Status (1)

Country Link
JP (1) JPS6054900B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444340A1 (en) * 1983-12-06 1985-06-13 Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto DIELECTRIC CERAMIC COMPOSITION FOR MICROWAVE FREQUENCIES
JPS60124305A (en) * 1983-12-06 1985-07-03 株式会社村田製作所 High frequency dielectric porcelain composition

Also Published As

Publication number Publication date
JPS5845156A (en) 1983-03-16

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