JPS5860662A - Dielectric ceramic composition for high frequency - Google Patents
Dielectric ceramic composition for high frequencyInfo
- Publication number
- JPS5860662A JPS5860662A JP56160745A JP16074581A JPS5860662A JP S5860662 A JPS5860662 A JP S5860662A JP 56160745 A JP56160745 A JP 56160745A JP 16074581 A JP16074581 A JP 16074581A JP S5860662 A JPS5860662 A JP S5860662A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- ceramic composition
- dielectric ceramic
- dielectric
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
この発明は高周波用の誘電体磁器組成物に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use.
マイクロ波やミリ波などの高周波領域において、誘電体
磁器は誘電体共振器やMIC用誘電体基板などに広く利
用されている。In high frequency regions such as microwaves and millimeter waves, dielectric ceramics are widely used for dielectric resonators, dielectric substrates for MIC, and the like.
従来、この種の誘電体磁83としては、ZrO2−8n
O2−TiO2系材料、Ba 2Ti 、O□。、(B
a%5r)(Z r −’I’ i ) Os糸材料、
Ba (Zn、 Ta) 03系材料などが知られてい
る。これらの材料はマイクロ波帯テノvj電率(ε、)
が20〜40、Qが4000〜8000゜共振周波数の
温度係数(τf)がOppm/−Cの特性を有する優秀
な材料であるが、最近では使用する周波数領域がさらに
高(なってきており、これに対応してさらに高いQ値を
有する材料が要求されている。Conventionally, as this type of dielectric magnet 83, ZrO2-8n
O2-TiO2-based material, Ba2Ti, O□. , (B
a%5r) (Zr-'I'i) Os yarn material,
Ba (Zn, Ta) 03-based materials are known. These materials have a microwave band tenoelectric constant (ε,)
It is an excellent material with the characteristics of 20 to 40, Q of 4000 to 8000 degrees, and a temperature coefficient (τf) of the resonance frequency of Oppm/-C, but recently the frequency range used has become even higher. Correspondingly, materials with even higher Q values are required.
したがって、この発明は高周波領域で従来に(らべて高
いQを有する誘電体磁器組成物を提供することを目的と
する。Therefore, an object of the present invention is to provide a dielectric ceramic composition having a higher Q than the conventional one in a high frequency region.
すなわち、この発明の要旨とするところは、−〇、02
≦夏≦0,13.0.28≦y≦0.33.0.59≦
2≦0.65Gただし、!+7+1=1)の範囲にある
ことを特徴とするものである。That is, the gist of this invention is -〇, 02
≦Summer≦0, 13.0.28≦y≦0.33.0.59≦
However, 2≦0.65G! +7+1=1).
以下、この発明を実施例に従って詳縦に説明する。Hereinafter, this invention will be described in detail according to examples.
高純度17)B、Ic01.8rCO,、ZrO2、N
iO,’l”a20s1に用い、第1表に示す組成から
なる磁器が得られるように秤量し、秤量原料を2時間湿
式混合しπ。次いで1200℃で2時間仮焼を行い、さ
らにバインダを加えて再び2時間湿式混合し、脱水、°
C14時間の条件で焼成して磁器試料を得た。High purity 17) B, Ic01.8rCO,, ZrO2, N
iO,'l''a20s1, weighed so as to obtain porcelain having the composition shown in Table 1, wet-mixed the weighed raw materials for 2 hours, then calcined at 1200°C for 2 hours, and further added a binder. Then wet mix again for 2 hours, dehydrate, °
A porcelain sample was obtained by firing under C14 hour conditions.
得られた磁器試料について、周波数7GHzIこおける
誘電率(ト)、Q、および共振周波数の温度係数(τf
)を測定し、その結果を第1表に示した。第1表中※印
はこの発明範囲外のものであり、それ以外はすべてこの
発明範囲内のものである。Regarding the obtained ceramic sample, the dielectric constant (T) at a frequency of 7 GHz, Q, and the temperature coefficient of the resonance frequency (τf
) was measured and the results are shown in Table 1. Items marked with * in Table 1 are outside the scope of this invention, and all others are within the scope of this invention.
また第1図にはこの発明にかかる組成のうち、ZrO,
、Ni01Ta057. ニラL’ テその組成範囲を
示した。図中の番号は第1表の試料番号と一致する。FIG. 1 also shows ZrO,
, Ni01Ta057. The composition range of Chive L'te is shown below. The numbers in the figure match the sample numbers in Table 1.
第 1 表
共振周波数の温度係数(τf)は+25℃〜+85°C
の温度範囲で行い、次式にもとづいて求めた値である。Table 1 Temperature coefficient (τf) of resonance frequency is +25°C to +85°C
This is the value obtained based on the following formula.
τf”−+τl−α
ここでrE:誘電率(至)の温度変化率α:磁器試料の
繰膨映率
第1表から明らかなように、仁の発明にかかるものは、
高い誘電率を示すとともにてfも良好であり、特にQに
ついては最高11000もの値を示すものが得られてお
り、高周波領域において誘電体共振器やMIC用誘電体
基板などの用途に有用な高周波用の誘電体磁器を提供す
ることができる。τf”−+τl−α where rE: Temperature change rate of permittivity (to) α: Expansion coefficient of porcelain sample As is clear from Table 1, the invention of Jin is as follows:
In addition to exhibiting a high dielectric constant, f is also good, and in particular, a value of up to 11,000 for Q has been obtained, making it a high-frequency product useful for applications such as dielectric resonators and dielectric substrates for MIC in the high-frequency region. It is possible to provide dielectric porcelain for.
また、Niの一部fco、Fe、Mg%Znなどの2価
イオンで置換しても同様の特性を有する高周波用誘電体
磁器組成物を得ることができる。Further, even if part of Ni is replaced with divalent ions such as fco, Fe, and Mg%Zn, a high frequency dielectric ceramic composition having similar characteristics can be obtained.
なお、この発明範囲外の組成(試料番号lO〜11)の
ものは、焼結が不可能なものであり、実用には供し得な
いものである。It should be noted that samples having compositions outside the scope of the present invention (sample numbers 10 to 11) cannot be sintered and cannot be put to practical use.
第1図はこの発明にかかる組成のうち、ZrO□、Ni
p、4Tag、 /、について組成範囲を示した三元図
である。
特許出願人
株式会社村田製作所
0.24
7′
2弓Figure 1 shows ZrO□, Ni among the compositions according to this invention.
It is a ternary diagram showing the composition range for p, 4Tag, /. Patent applicant Murata Manufacturing Co., Ltd. 0.24 7' 2 bows
Claims (1)
07/2X72 m)’/2で表わされる組成におい
て、0≦V≦0.13.0.02≦X≦013.0.2
8≦y≦033.0.59≦2≦0.65(たtごし、
x+y+z=1)の範囲蚤こあることを特徴とする高周
波用誘電体磁器組成物。General formula (Ba1.5rv) (ZrxNi, 'l'a2)
In the composition represented by 07/2X72 m)'/2, 0≦V≦0.13.0.02≦X≦013.0.2
8≦y≦033.0.59≦2≦0.65 (Tagoshi,
A dielectric porcelain composition for high frequency use, characterized in that it has flaws in the range x+y+z=1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56160745A JPS6054904B2 (en) | 1981-10-07 | 1981-10-07 | Dielectric ceramic composition for high frequency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56160745A JPS6054904B2 (en) | 1981-10-07 | 1981-10-07 | Dielectric ceramic composition for high frequency |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5860662A true JPS5860662A (en) | 1983-04-11 |
JPS6054904B2 JPS6054904B2 (en) | 1985-12-02 |
Family
ID=15721533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56160745A Expired JPS6054904B2 (en) | 1981-10-07 | 1981-10-07 | Dielectric ceramic composition for high frequency |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054904B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123488A (en) * | 1987-11-07 | 1989-05-16 | Nikko Kk | Dielectric material |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365502A (en) * | 1986-09-05 | 1988-03-24 | Hino Motors Ltd | Program controller for automobile |
-
1981
- 1981-10-07 JP JP56160745A patent/JPS6054904B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01123488A (en) * | 1987-11-07 | 1989-05-16 | Nikko Kk | Dielectric material |
JPH054942B2 (en) * | 1987-11-07 | 1993-01-21 | Nikko Kk |
Also Published As
Publication number | Publication date |
---|---|
JPS6054904B2 (en) | 1985-12-02 |
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