JPS5860544A - 結晶欠陥のゲツタリング法 - Google Patents

結晶欠陥のゲツタリング法

Info

Publication number
JPS5860544A
JPS5860544A JP56160642A JP16064281A JPS5860544A JP S5860544 A JPS5860544 A JP S5860544A JP 56160642 A JP56160642 A JP 56160642A JP 16064281 A JP16064281 A JP 16064281A JP S5860544 A JPS5860544 A JP S5860544A
Authority
JP
Japan
Prior art keywords
silicon film
single crystal
oxygen
crystal silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56160642A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026221B2 (enExample
Inventor
Hirozo Takano
高野　博三
Takayuki Matsukawa
隆行 松川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56160642A priority Critical patent/JPS5860544A/ja
Publication of JPS5860544A publication Critical patent/JPS5860544A/ja
Publication of JPH026221B2 publication Critical patent/JPH026221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03—
JP56160642A 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法 Granted JPS5860544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56160642A JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56160642A JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Publications (2)

Publication Number Publication Date
JPS5860544A true JPS5860544A (ja) 1983-04-11
JPH026221B2 JPH026221B2 (enExample) 1990-02-08

Family

ID=15719342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56160642A Granted JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Country Status (1)

Country Link
JP (1) JPS5860544A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置
US6001711A (en) * 1997-03-12 1999-12-14 Nec Corporation Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置
US6001711A (en) * 1997-03-12 1999-12-14 Nec Corporation Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer

Also Published As

Publication number Publication date
JPH026221B2 (enExample) 1990-02-08

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