JPS5860534A - 半導体結晶の製造方法 - Google Patents
半導体結晶の製造方法Info
- Publication number
- JPS5860534A JPS5860534A JP56159589A JP15958981A JPS5860534A JP S5860534 A JPS5860534 A JP S5860534A JP 56159589 A JP56159589 A JP 56159589A JP 15958981 A JP15958981 A JP 15958981A JP S5860534 A JPS5860534 A JP S5860534A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- growth
- substrate
- compound
- solute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159589A JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159589A JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860534A true JPS5860534A (ja) | 1983-04-11 |
| JPH0322052B2 JPH0322052B2 (enExample) | 1991-03-26 |
Family
ID=15697004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56159589A Granted JPS5860534A (ja) | 1981-10-06 | 1981-10-06 | 半導体結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860534A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825349A (zh) * | 2019-11-20 | 2021-05-21 | 郑州宇通集团有限公司 | 复合正极极片、锂二次电池 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4870473A (enExample) * | 1971-12-23 | 1973-09-25 |
-
1981
- 1981-10-06 JP JP56159589A patent/JPS5860534A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4870473A (enExample) * | 1971-12-23 | 1973-09-25 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825349A (zh) * | 2019-11-20 | 2021-05-21 | 郑州宇通集团有限公司 | 复合正极极片、锂二次电池 |
| CN112825349B (zh) * | 2019-11-20 | 2022-05-17 | 郑州宇通集团有限公司 | 复合正极极片、锂二次电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322052B2 (enExample) | 1991-03-26 |
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