JPS5858773A - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ

Info

Publication number
JPS5858773A
JPS5858773A JP56158445A JP15844581A JPS5858773A JP S5858773 A JPS5858773 A JP S5858773A JP 56158445 A JP56158445 A JP 56158445A JP 15844581 A JP15844581 A JP 15844581A JP S5858773 A JPS5858773 A JP S5858773A
Authority
JP
Japan
Prior art keywords
silicon nitride
film
nitride film
silicon
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56158445A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526353B2 (enrdf_load_stackoverflow
Inventor
Hidekazu Suzuki
英一 鈴木
Yutaka Hayashi
豊 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56158445A priority Critical patent/JPS5858773A/ja
Publication of JPS5858773A publication Critical patent/JPS5858773A/ja
Publication of JPH0526353B2 publication Critical patent/JPH0526353B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56158445A 1981-10-05 1981-10-05 不揮発性半導体メモリ Granted JPS5858773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56158445A JPS5858773A (ja) 1981-10-05 1981-10-05 不揮発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56158445A JPS5858773A (ja) 1981-10-05 1981-10-05 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS5858773A true JPS5858773A (ja) 1983-04-07
JPH0526353B2 JPH0526353B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=15671914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158445A Granted JPS5858773A (ja) 1981-10-05 1981-10-05 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS5858773A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JP2002043448A (ja) * 2000-07-14 2002-02-08 Lucent Technol Inc 集積回路とメモリセルのトラップチャージ層のチャージ方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116982A (enrdf_load_stackoverflow) * 1973-12-14 1974-11-08
JPS5231628U (enrdf_load_stackoverflow) * 1975-08-28 1977-03-05

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116982A (enrdf_load_stackoverflow) * 1973-12-14 1974-11-08
JPS5231628U (enrdf_load_stackoverflow) * 1975-08-28 1977-03-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079606A (en) * 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JP2002043448A (ja) * 2000-07-14 2002-02-08 Lucent Technol Inc 集積回路とメモリセルのトラップチャージ層のチャージ方法

Also Published As

Publication number Publication date
JPH0526353B2 (enrdf_load_stackoverflow) 1993-04-15

Similar Documents

Publication Publication Date Title
DE69936654T2 (de) Speicheranordnung
Tan et al. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
TWI373846B (en) Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
JP2965415B2 (ja) 半導体記憶装置
King et al. MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex
Govoreanu et al. Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities
EP0436156A1 (en) Nonvolatile semiconductor memory device having tunnel insulating film structure
JPH10256400A (ja) 不揮発性半導体記憶装置
CN102473682B (zh) 非易失性半导体存储器
US20070272916A1 (en) Flash memory with deep quantum well and high-K dielectric
CN101589461A (zh) 用于电子装置的电子阻断层
CN101685821A (zh) 一种电荷捕捉浮动栅极结构存储单元及其制作方法
US20050167734A1 (en) Flash memory devices using large electron affinity material for charge trapping
US9922833B2 (en) Charge trapping split gate embedded flash memory and associated methods
US11825652B2 (en) Methods of erasing semiconductor non-volatile memories
US20090001443A1 (en) Non-volatile memory cell with multi-layer blocking dielectric
US7358137B2 (en) Memory devices including barrier layers and methods of manufacturing the same
KR100620549B1 (ko) 나노선을 이용한 나노 부유 게이트 메모리 소자의 제조방법
US20070114572A1 (en) Gate structure including multi-tunneling layer and method of fabricating the same, non-volatile memory device and method of fabricating the same
JPS5858773A (ja) 不揮発性半導体メモリ
Huang et al. Silicon Nanowire Charge‐Trap Memory Incorporating Self‐Assembled Iron Oxide Quantum Dots
JPH0358188B2 (enrdf_load_stackoverflow)
JP2002368142A (ja) 不揮発性半導体記憶装置およびその製造方法
KR20090021974A (ko) 비휘발성 메모리 소자 및 이를 제조하는 방법
KR100868031B1 (ko) 비휘발성 메모리 소자 및 이를 제조하는 방법