JPS5855400A - 二酸化テルル単結晶の育成方法 - Google Patents
二酸化テルル単結晶の育成方法Info
- Publication number
- JPS5855400A JPS5855400A JP56154368A JP15436881A JPS5855400A JP S5855400 A JPS5855400 A JP S5855400A JP 56154368 A JP56154368 A JP 56154368A JP 15436881 A JP15436881 A JP 15436881A JP S5855400 A JPS5855400 A JP S5855400A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium dioxide
- single crystal
- gold
- crucible
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 30
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052697 platinum Inorganic materials 0.000 abstract description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 239000011733 molybdenum Substances 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154368A JPS5855400A (ja) | 1981-09-29 | 1981-09-29 | 二酸化テルル単結晶の育成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154368A JPS5855400A (ja) | 1981-09-29 | 1981-09-29 | 二酸化テルル単結晶の育成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5855400A true JPS5855400A (ja) | 1983-04-01 |
| JPH025718B2 JPH025718B2 (cg-RX-API-DMAC7.html) | 1990-02-05 |
Family
ID=15582627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56154368A Granted JPS5855400A (ja) | 1981-09-29 | 1981-09-29 | 二酸化テルル単結晶の育成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5855400A (cg-RX-API-DMAC7.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62233386A (ja) * | 1986-04-04 | 1987-10-13 | 株式会社 間組 | 免震システム用減衰装置 |
| JP2006342013A (ja) * | 2005-06-08 | 2006-12-21 | Tdk Corp | 単結晶育成用ルツボ |
| FR2887263A1 (fr) * | 2005-06-17 | 2006-12-22 | Centre Nat Rech Scient | Procede de preparation d'un monocristal de paratellurite |
| CN101851783B (zh) | 2009-04-03 | 2012-08-08 | 上海硅酸盐研究所中试基地 | 一种高纯二氧化碲单晶及制备方法 |
-
1981
- 1981-09-29 JP JP56154368A patent/JPS5855400A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62233386A (ja) * | 1986-04-04 | 1987-10-13 | 株式会社 間組 | 免震システム用減衰装置 |
| JP2006342013A (ja) * | 2005-06-08 | 2006-12-21 | Tdk Corp | 単結晶育成用ルツボ |
| FR2887263A1 (fr) * | 2005-06-17 | 2006-12-22 | Centre Nat Rech Scient | Procede de preparation d'un monocristal de paratellurite |
| CN101851783B (zh) | 2009-04-03 | 2012-08-08 | 上海硅酸盐研究所中试基地 | 一种高纯二氧化碲单晶及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025718B2 (cg-RX-API-DMAC7.html) | 1990-02-05 |
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