JPH025718B2 - - Google Patents

Info

Publication number
JPH025718B2
JPH025718B2 JP56154368A JP15436881A JPH025718B2 JP H025718 B2 JPH025718 B2 JP H025718B2 JP 56154368 A JP56154368 A JP 56154368A JP 15436881 A JP15436881 A JP 15436881A JP H025718 B2 JPH025718 B2 JP H025718B2
Authority
JP
Japan
Prior art keywords
tellurium dioxide
gold
single crystal
crucible
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56154368A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5855400A (ja
Inventor
Yoshio Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56154368A priority Critical patent/JPS5855400A/ja
Publication of JPS5855400A publication Critical patent/JPS5855400A/ja
Publication of JPH025718B2 publication Critical patent/JPH025718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56154368A 1981-09-29 1981-09-29 二酸化テルル単結晶の育成方法 Granted JPS5855400A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56154368A JPS5855400A (ja) 1981-09-29 1981-09-29 二酸化テルル単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154368A JPS5855400A (ja) 1981-09-29 1981-09-29 二酸化テルル単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS5855400A JPS5855400A (ja) 1983-04-01
JPH025718B2 true JPH025718B2 (cg-RX-API-DMAC7.html) 1990-02-05

Family

ID=15582627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154368A Granted JPS5855400A (ja) 1981-09-29 1981-09-29 二酸化テルル単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS5855400A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62233386A (ja) * 1986-04-04 1987-10-13 株式会社　間組 免震システム用減衰装置
JP4591219B2 (ja) * 2005-06-08 2010-12-01 Ｔｄｋ株式会社 単結晶育成用ルツボ
FR2887263B1 (fr) * 2005-06-17 2007-09-14 Centre Nat Rech Scient Procede de preparation d'un monocristal de paratellurite
CN101851783B (zh) 2009-04-03 2012-08-08 上海硅酸盐研究所中试基地 一种高纯二氧化碲单晶及制备方法

Also Published As

Publication number Publication date
JPS5855400A (ja) 1983-04-01

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