JPS5852685Y2 - Metal envelopes for electronic components - Google Patents

Metal envelopes for electronic components

Info

Publication number
JPS5852685Y2
JPS5852685Y2 JP12503778U JP12503778U JPS5852685Y2 JP S5852685 Y2 JPS5852685 Y2 JP S5852685Y2 JP 12503778 U JP12503778 U JP 12503778U JP 12503778 U JP12503778 U JP 12503778U JP S5852685 Y2 JPS5852685 Y2 JP S5852685Y2
Authority
JP
Japan
Prior art keywords
metal
stem
metal cap
convex portion
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12503778U
Other languages
Japanese (ja)
Other versions
JPS5542327U (en
Inventor
健三 藤井
Original Assignee
日本電気ホームエレクトロニクス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気ホームエレクトロニクス株式会社 filed Critical 日本電気ホームエレクトロニクス株式会社
Priority to JP12503778U priority Critical patent/JPS5852685Y2/en
Publication of JPS5542327U publication Critical patent/JPS5542327U/ja
Application granted granted Critical
Publication of JPS5852685Y2 publication Critical patent/JPS5852685Y2/en
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は半導体装置等の電子部品の金属製外囲器の改良
構造に関する。
[Detailed Description of the Invention] The present invention relates to an improved structure of a metal envelope for an electronic component such as a semiconductor device.

パワートランジスタ等のキャン封止型半導体装置は、例
えば第1図および第2図のような構造を有している。
A can-sealed semiconductor device such as a power transistor has a structure as shown in FIGS. 1 and 2, for example.

図において、1は金属ステムで、比較的厚肉の鉄板をほ
ぼ菱形状に打ち抜いたステム基板2の透孔3,3にガラ
ス4,4を介して鉄・ニッケル合金製のリード線5,5
を気密絶縁的に封着して形成されている。
In the figure, 1 is a metal stem, and lead wires 5, 5 made of iron-nickel alloy are passed through glass 4, 4 to through holes 3, 3 of a stem board 2, which is made by punching out a relatively thick iron plate into an approximately diamond shape.
are sealed in an airtight and insulating manner.

ステム基板1の上面中央部には半導体素子6が半田付け
され、前記リード線5,5と半導体素子6の電極との間
は接続細線7,7によって接続されている。
A semiconductor element 6 is soldered to the center of the upper surface of the stem substrate 1, and the lead wires 5, 5 and the electrodes of the semiconductor element 6 are connected by thin connecting wires 7, 7.

そして、上から鉄製の金属キャップ8を被せて、フラン
ジ部9をステム基板2の上面部に抵抗溶接して封止して
いる。
Then, a metal cap 8 made of iron is placed on top, and the flange portion 9 is resistance welded to the upper surface of the stem substrate 2 for sealing.

ところで、前記ステム基板2と金属キャップ8との抵抗
溶接を行なうには、一般に第3図に示すように、金属キ
ャップ8のフランジ部9の下面に環状の凸部(プロジェ
クション)10を形成して、電流の集中を図り、もって
少ない電流で確′実に抵抗溶接するようにしている。
By the way, in order to perform resistance welding between the stem substrate 2 and the metal cap 8, generally an annular projection 10 is formed on the lower surface of the flange portion 9 of the metal cap 8, as shown in FIG. By concentrating the current, we are able to reliably perform resistance welding with as little current as possible.

しかしながら、溶接治具(図示せず)の部品受孔の内径
と、金属キャップ8の外径との寸法差等によって、前記
凸部10の先端部が溶触した際に、金属キャップ8がス
テム基板2上を滑って、第4図に示すように、金属キャ
ップ8とステム基板2との位置関係がずれて、外観不良
になる場合があった。
However, due to a dimensional difference between the inner diameter of the component receiving hole of the welding jig (not shown) and the outer diameter of the metal cap 8, when the tip of the convex part 10 comes into contact with the stem board, the metal cap 8 may become attached to the stem board. 2, the positional relationship between the metal cap 8 and the stem substrate 2 may be shifted, resulting in poor appearance, as shown in FIG.

本考案はこのような点にかんがみ提案されたもので、ス
テム基板と金属キャップとの対向位置の一方に、高さが
hで先端角度がαの凸部を形成するとともに、他方に深
さdが前記りよりも小さくかつ角度βが前記αよりも大
きい凹部を形成し、前記凸部を凹部に嵌合させた状態で
抵抗溶接したことを特徴とする。
The present invention was proposed in consideration of these points, and includes forming a convex portion with a height h and a tip angle α on one side of the stem substrate and the metal cap facing each other, and a convex portion with a depth d on the other side. The present invention is characterized in that a recess is formed in which the angle β is smaller than the above and the angle β is larger than the α, and the protrusion is fitted into the recess and resistance welded.

以下、本考案の実施例を図面により説明する。Embodiments of the present invention will be described below with reference to the drawings.

第5図は抵抗溶接前の分解縦断面図を示し、第6図は要
部の拡大縦断面図を示す。
FIG. 5 shows an exploded longitudinal sectional view before resistance welding, and FIG. 6 shows an enlarged longitudinal sectional view of the main parts.

図において、第1図および第2図と同一部分には同一参
照符号を付したのでその説明を省略する。
In the figure, parts that are the same as those in FIGS. 1 and 2 are given the same reference numerals, and their explanations will be omitted.

本考案にあっては、金属キャップ8の凸部10に対向す
るステム基板2の上面に環状の凹部11を形成している
In the present invention, an annular recess 11 is formed on the upper surface of the stem substrate 2 facing the protrusion 10 of the metal cap 8.

前記凸部10の高さ寸法りと、凹部11の深さdとは第
6図に示すように、hadの関係に設定されている。
As shown in FIG. 6, the height of the convex portion 10 and the depth d of the concave portion 11 are set in a relationship of had.

また前記凸部10の先端角度αと、凹部11の角度βと
は、第6図から明らかなように、α〈βの関係に設定さ
れている。
Further, the tip angle α of the convex portion 10 and the angle β of the concave portion 11 are set in the relationship α<β, as is clear from FIG.

したがって、前記凸部10を凹部11に嵌合した際は、
図示するように、金属キャップ8のフランジ部9の下面
9aがステム基板2の上面2aから浮き上っている。
Therefore, when the convex portion 10 is fitted into the concave portion 11,
As shown in the figure, the lower surface 9a of the flange portion 9 of the metal cap 8 is raised from the upper surface 2a of the stem substrate 2.

また、前記凸部10の先端部分と凹部11の底部の接触
部分を除いては、凸部10と凹部11とは離れている。
Further, except for the contact portion between the tip of the protrusion 10 and the bottom of the recess 11, the protrusion 10 and the recess 11 are separated from each other.

このような構成であると、ステム基板2と金属キャップ
8とを抵抗溶接する場合に、凸部10によって電流の集
中が図れ、少ない電流でもって確実に溶接できるのみな
らず、凸部10の先端部が溶けた場合に、先端部のすぐ
上の未溶軸部分が凹部11に入り込んで来るため、金属
キャップ8がステム基板2の上面を滑るといったことが
なくなり、ステム基板2と金属キャップ8とが正しい関
係位置に溶接され、商品価値の高いキャン封止型半導体
装置が得られる。
With this configuration, when resistance welding the stem board 2 and the metal cap 8, the convex portion 10 can concentrate the current, and not only can welding be performed reliably with a small amount of current, but also the tip of the convex portion 10 can be welded reliably with a small amount of current. When the part melts, the unmelted shaft part just above the tip enters the recess 11, so the metal cap 8 will not slip on the top surface of the stem substrate 2, and the stem substrate 2 and the metal cap 8 will be separated. are welded in the correct relative positions, resulting in a can-sealed semiconductor device with high commercial value.

なお、上記実施例は金属ステム1の上面が平坦面である
場合について説明したが、例えばコイニングと称して、
上面中央部を周縁部より厚肉状とした金属ステムや、半
導体素子の半田付は位置に銅等の良熱伝導性放熱体を嵌
合固着した金属ステムを用いる場合にも適用できるし、
あるいは銅等の良熱伝導性ステム基板の金属キャップの
溶接個所に鉄製の溶接リングを固着した金属ステムを用
いる場合にも適用できる。
In addition, although the above-mentioned example explained the case where the upper surface of metal stem 1 was a flat surface, for example, it is called coining,
It can also be applied to metal stems in which the center part of the upper surface is thicker than the peripheral parts, or metal stems in which a heat dissipating material such as copper is fitted and fixed in place for soldering semiconductor elements.
Alternatively, the present invention can also be applied to a metal stem in which an iron welding ring is fixed to the welding location of a metal cap on a stem substrate with good thermal conductivity such as copper.

さらには、上記実施例では金属キャップ8に凸部10を
、また金属ステム1に凹部11を形成する場合について
説明したが、金属ステム1に凸部を、また金属キャップ
8に凹部を形成してもよい。
Furthermore, in the above embodiment, the case where the protrusion 10 is formed on the metal cap 8 and the recess 11 is formed on the metal stem 1 is explained, but it is also possible to form the protrusion on the metal stem 1 and the recess on the metal cap 8. Good too.

本考案は半導体装置のみならず他の電子部品に適用する
こともできる。
The present invention can be applied not only to semiconductor devices but also to other electronic components.

本考案は以上のように、金属ステムと金属キャップとの
対向位置の一方に、高さがhで先端角度がαの凸部を形
成するとともに、他方に深さdが前記りよりも小さくか
つ角度βが前記αよりも大きい凹部を形成し、前記凸部
を凹部に嵌合させた状態で抵抗溶接したものであるから
、前記凸部によって電流集中を図り、少ない電流で確実
に溶接できるのみならず、金属ステムと金属キャップと
が正しい関係位置に固着できるという効果を奏する。
As described above, the present invention forms a convex portion with a height h and a tip angle α on one side of the opposing position of the metal stem and the metal cap, and has a depth d smaller than the above and on the other side. Since a recess with an angle β larger than α is formed and resistance welding is performed with the protrusion fitted into the recess, the protrusion concentrates the current and ensures reliable welding with a small amount of current. This has the effect that the metal stem and the metal cap can be fixed in the correct relative position.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はキャン封止型半導体装置の金属キャップの一部
を切欠いた平面図、第2図は第1図のIIII線に沿う
縦断面図、第3図は従来装置の抵抗溶接前の分解縦断面
図、第4図は従来装置において発生した金属ステムと金
属キャップの位置ずれ状態を示す平面図、第5図は本考
案の一実施例のキャン封止型半導体装置の抵抗溶接前の
分解縦断面図、第6図は抵抗溶接前の組立状態における
要部拡大縦断面図である。 1・・・・・・金属ステム、2・・・・・・ステム基板
、3,3・・・・・・透孔、4,4・・・・・・ガラス
、5,5・・・・・・リード線、6・・・・・・半導体
素子、7,7・・・・・・接続細線、8・・・・・・金
属キャップ、9・・・・・・フランジ部、10・・・・
・・凸部、11・・・・・・凹部。
Figure 1 is a partially cutaway plan view of the metal cap of a can-sealed semiconductor device, Figure 2 is a vertical sectional view taken along line III in Figure 1, and Figure 3 is an exploded view of the conventional device before resistance welding. 4 is a plan view showing misalignment between the metal stem and metal cap that occurs in a conventional device; FIG. 5 is an exploded view of a can-sealed semiconductor device according to an embodiment of the present invention before resistance welding. FIG. 6 is an enlarged longitudinal sectional view of main parts in an assembled state before resistance welding. 1... Metal stem, 2... Stem substrate, 3, 3... Through hole, 4, 4... Glass, 5, 5... ... Lead wire, 6 ... Semiconductor element, 7, 7 ... Connection thin wire, 8 ... Metal cap, 9 ... Flange part, 10 ...・・・
... Convex portion, 11... Concave portion.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 金属ステムに金属キャップを抵抗溶接し内部に電子部品
素子を収納してなるものにおいて、前記金属ステムと金
属キャップとの対向位置の一方に、高さがhで先端角度
がαの凸部を形成するとともに、他方に深さdが前記り
よりも小さくかつ角度βが前記αよりも大きい凹部を形
成し、前記凸部を凹部に嵌合させた状態で抵抗溶接した
ことを特徴とする電子部品の金属製外囲器。
In a device in which a metal cap is resistance welded to a metal stem and an electronic component element is housed inside, a convex portion with a height h and a tip angle α is formed at one of the opposing positions of the metal stem and the metal cap. At the same time, a concave portion having a depth d smaller than the above and an angle β larger than the α is formed on the other side, and the convex portion is resistance welded with the convex portion fitted into the concave portion. metal envelope.
JP12503778U 1978-09-12 1978-09-12 Metal envelopes for electronic components Expired JPS5852685Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12503778U JPS5852685Y2 (en) 1978-09-12 1978-09-12 Metal envelopes for electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12503778U JPS5852685Y2 (en) 1978-09-12 1978-09-12 Metal envelopes for electronic components

Publications (2)

Publication Number Publication Date
JPS5542327U JPS5542327U (en) 1980-03-18
JPS5852685Y2 true JPS5852685Y2 (en) 1983-12-01

Family

ID=29085585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12503778U Expired JPS5852685Y2 (en) 1978-09-12 1978-09-12 Metal envelopes for electronic components

Country Status (1)

Country Link
JP (1) JPS5852685Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387721U (en) * 1986-09-17 1988-06-08

Also Published As

Publication number Publication date
JPS5542327U (en) 1980-03-18

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