JPS5852578A - Device for testing integrated circuit - Google Patents

Device for testing integrated circuit

Info

Publication number
JPS5852578A
JPS5852578A JP56150391A JP15039181A JPS5852578A JP S5852578 A JPS5852578 A JP S5852578A JP 56150391 A JP56150391 A JP 56150391A JP 15039181 A JP15039181 A JP 15039181A JP S5852578 A JPS5852578 A JP S5852578A
Authority
JP
Japan
Prior art keywords
address
signal
pattern
test
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56150391A
Other languages
Japanese (ja)
Inventor
Sadaaki Tanaka
田中 貞明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56150391A priority Critical patent/JPS5852578A/en
Publication of JPS5852578A publication Critical patent/JPS5852578A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits

Abstract

PURPOSE:To shorten the time required for checking the cause of failure, by generating a test pattern signal and an expected pattern signal from an address signal, and providing a storage register of a pattern address on a circuit for comparing the test data signal with the expected pattern signal. CONSTITUTION:A storage part 1 of a test pattern applied to an IC6 to be tested receives a signal 10 of an address control part 3, and outputs a test pattern signal 9 and an expected pattern signal 8. Test data information 16 of the IC6, and the signal 8 are applied to a deciding circuit 7. In this case, a pattern address which has executed an instruction of the control part 3 is stored in a storage register 13, and when the circuit 7 has decided its failure, a control signal 15 of a write control part 5, and an address of the register 13 are stored in a storage device 14 together with the signal 10 and good/failure information 12 of every pin of the circuit 7. Accordingly, it is possible to know an address of a call instruction of a subroutine by reading the contents of the device 14, and it is possible to shorten the time required for checking the cause of failure of the IC to be tested.

Description

【発明の詳細な説明】 本光明は集積回路試験装置に関し、特に試験装置内に具
備さ扛る不良解析装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an integrated circuit testing device, and more particularly to a failure analysis device provided within the testing device.

一般に、集積回路試験装!(以下IC試験装置という)
にて集積回路(以下ICという)を試験する場合、予め
被測定ICの種類毎に試験パターンを準備し、この試験
パターン=6IC試験装置に入力し、内蔵するパターン
完生部に一時的に蓄え。
In general, integrated circuit test equipment! (hereinafter referred to as IC test equipment)
When testing integrated circuits (hereinafter referred to as IC), prepare a test pattern for each type of IC to be measured in advance, input this test pattern = 6 IC test equipment, and temporarily store it in the built-in pattern generation section. .

こ′t1.全1.開始時に0番地から順に最終番地まで
被試験ICに印加し、被試験iCからの出方を試験パタ
ーンで期待する出力と比較することで、被試験ICを検
査する。試験パターンを被試験iCに印刀口した際、何
らかの原因で試験パターンの任意の位置で被試験ICか
らの出刃と試験パターンで期待する出力、即ち期待値と
が一致しない場合、この被試験ICは不良であるという
。この場合、この不良要因を調査する必要がある。この
為、この不良が生じた試験パターンの番地及び不良とな
った被試験ICの出力ピンを知る為、被試験ICのピン
毎のその番地での良/不良結果を記憶しておく様な不良
解析装置がit試験装置内Vこ具備されている。
This't1. All 1. The IC under test is tested by applying voltage to the IC under test from address 0 to the final address at the start and comparing the output from the IC under test with the output expected from the test pattern. When the test pattern is stamped on the IC under test, if for some reason the output from the IC under test does not match the output expected from the test pattern, that is, the expected value, at any position in the test pattern, this IC under test It is said to be defective. In this case, it is necessary to investigate the cause of this failure. Therefore, in order to know the address of the test pattern where this defect occurred and the output pin of the IC under test that became defective, it is necessary to memorize the pass/fail result for each pin of the IC under test at that address. An analysis device is provided within the IT test equipment.

近年、ICの集積度5機能は飛躍的に向上し、試験する
為に必要な試験パターンも膨大な量になりつつあり、試
験装置のパターン発生部においても試験パターンを格納
する為に膨大な記憶部fが要求さnる様になってきてい
る。しかも、試験パターン発生部は窩速の動作を要求さ
nているから、試験装置が非常に高価なものとなる。装
置の価格上昇會防ぐ為、試験パターンの発生方法に種々
の工夫を凝らし、試験パターンを短縮する様にしている
。この方法として、最もよく使わrしるのは試験パター
ン内にサブルーチンを設定可能にする方法である。
In recent years, the integration level5 functions of ICs have improved dramatically, and the number of test patterns required for testing has become enormous.The pattern generation section of the test equipment also requires a huge amount of memory to store the test patterns. Part f is becoming more and more demanding. Moreover, since the test pattern generator is required to operate at high speed, the test equipment becomes extremely expensive. In order to prevent the price of equipment from rising, we have devised various ways to generate test patterns to shorten the length of test patterns. The most commonly used method for this is to allow subroutines to be set within the test pattern.

従来、上記の様なパターン発生部をもつIC試験装置で
は、試験パターンを発生中に不良の発生した試験パター
ンの番地及びその時の各ビン毎の良/不良の情報を不良
解析装置で記憶しておき、試験終了時にこの内容を読み
出すことにより不良となった試験パターンの番地、ビン
番号の情報を得ることが可能となっている。
Conventionally, in an IC test device having a pattern generation section as described above, a defect analysis device stores the address of the test pattern where a defect occurred and the pass/fail information for each bin at that time while generating the test pattern. By reading this content at the end of the test, it is possible to obtain information on the address and bin number of the defective test pattern.

第1図は従来のIC試験装置の不良解析装置の一例のプ
ロ、り図である。
FIG. 1 is a schematic diagram of an example of a conventional failure analysis device for an IC testing device.

第1図にお込で、■は被試験1Cへ印加する試験パター
ンを記憶しておくパターン記憶”J、2は試験開始時に
発生するパターン記憶部工の発生番地順を制御する為の
マイクロ命令を記憶しておくマイクロ翁令記憶部、3は
マイクロ命令記憶部2に記憶さnているマイクロ命令を
解読し、パターン記憶部lの発生番地順を制御するアド
レス制御部、4は試験パターン発生中に不良が生じた時
パターン記憶部1の番地及びその時の各ビン毎の良/不
良情報を記憶する記憶装置、5は不良が発生した時ピン
毎の良/不良情報及びパターン記憶部1の不良番地を記
憶装置4に曹き込む曹込み制御部、6は被試験IC,7
は被試験■C6からの出力をパターン記憶部1からの期
待パターンと比較し一致しているかどうかをビン毎に判
定する判定回路、8はパターン記憶部lから判定回路7
へ被試験1cからの出力を中」定する為の期待パターン
を判定回路7へ印加する期待値信号、9はパターン記憶
部lから試験パターンを被試験115に印加する試験パ
ターン信号、10はアドレス制御部3でw4読さ扛パタ
ーンダ白生番地順を制御するアドレス信号、11は判定
回路7において期待パターンと被試験ICの出力とが一
致しない場合、即ち不良が発生したとき判定回路7から
出力さnる書込み4g号、12は判定回路7から出力さ
γしるビン毎の良/不良情報イぎ号である。
In Figure 1, ■ is a pattern memory "J" that stores the test pattern to be applied to the test object 1C, and 2 is a microinstruction for controlling the address order of pattern memory operations that occur at the start of the test. 3 is an address control unit that decodes the microinstructions stored in the microinstruction storage unit 2 and controls the order of generation addresses in the pattern storage unit 1. 4 is a test pattern generation unit. A storage device 5 stores the address of the pattern storage unit 1 and the pass/fail information for each pin at that time when a defect occurs in the pin; A storage control unit that stores the defective address into the storage device 4, 6 is the IC under test, 7
8 is a determination circuit that compares the output from the C6 under test with the expected pattern from the pattern storage unit 1 and determines whether or not they match for each bin; 8 is a determination circuit 7 from the pattern storage unit l;
9 is an expected value signal for applying an expected pattern to the judgment circuit 7 to determine the output from the test target 1c; 9 is a test pattern signal for applying a test pattern from the pattern storage unit l to the test target 115; 10 is an address An address signal 11 is an address signal that controls the address order of the pattern read by the control unit 3, and 11 is output from the judgment circuit 7 when the expected pattern and the output of the IC under test do not match, that is, when a defect occurs. The writing No. 4g and No. 12 are the good/bad information No. 12 for each bin outputted from the determination circuit 7.

被試験ICの試験開始時にマイクロ命令記憶部2からの
マイクロ命令をアドレス制御部3が解読しこの解読結果
に従ってアドレス信号10をパターン記憶部1に印加す
る。パターン記憶部lは被試験■C6へ試験パターン信
号9を印加すると共に、判定回路7へ期待パターン信号
8を出力する。
At the start of testing the IC under test, the address control section 3 decodes the microinstructions from the microinstruction storage section 2, and applies the address signal 10 to the pattern storage section 1 in accordance with the decoding result. The pattern storage section 1 applies a test pattern signal 9 to the test object 1C6, and outputs an expected pattern signal 8 to the determination circuit 7.

 5− 同時にここの番地のマイクロ命令がアドレス制御部3に
読みこま1し解読さし、次に発生さ扛る番地がパターン
記憶部1に与えらγしる。この様にして順にパターン記
憶部1に記憶さrしている試験パターンの最終番地1で
被試験IC5に印加さγしる。
5- At the same time, the microinstruction at this address is read and decoded by the address control unit 3, and the address to be generated next is given to the pattern storage unit 1. In this way, γ is applied to the IC under test 5 at the last address 1 of the test patterns stored in the pattern storage section 1 in order.

この時、試験パターンを発生中に判定回路7で不良が発
生ずると、判定回路7から書込み制御部5へ曹込み信号
11が出力さγL1判定回路7からのビン毎の艮/不良
情報信号12と、アドレス制御部3からのアドレス信号
10が記憶装置4に誉込まlしる。以上の様に不良が発
生する腿にビン毎の良/不良情報等が順次記憶装置4に
書込まれることが繰す返さnる。この結果、試験パター
ンが最終番地まで発生さした後、記憶装置4の内容を読
みとることにより不良情報を得ることができる。
At this time, if a defect occurs in the determination circuit 7 while the test pattern is being generated, the determination circuit 7 outputs a correction signal 11 to the write control unit 5. Then, the address signal 10 from the address control section 3 is input to the storage device 4. As described above, good/bad information for each bottle is repeatedly written to the storage device 4 for each bottle where a defect occurs. As a result, defect information can be obtained by reading the contents of the storage device 4 after the test pattern has been generated up to the final address.

試験パターン内にサブルーチンが設定された場合、試験
パターンの発生順序は以下の様になる。
When a subroutine is set within a test pattern, the test pattern generation order is as follows.

パターン記憶部1のO番地から順に試験パターンが発生
して行くのであるが、もし01番番地 C2番地のマイ
クロ命令にサブルーチン部の試験パタ 6一 −ンを発生する呼出しく CALL )命令が設定しで
あるとすると+(’1番地ケ発生後に指定さnたサブル
ーチンへ釦生番地が移り1このサブルーチンのA1から
A2番地を発生し、そILから01+1番地のパターン
を発生し、そ扛からC2番地まで順に実行し、C2番地
を発生すると再びサブルーチンへ移QA1〜人2番地を
発生じた後、C2+1番地を発生する。この様にして呼
出し命令がマイクロ命令に設定さEている度にサブルー
チン八〇からA2番地が発生さfることになる。この時
、不良がサブルーチンA1からA2番地ヲ兄発生ている
時に生じたとすると記憶装置4に曹き込ま扛る不良番地
はA、からA2の間の番地となる。しかし、この人1か
らA2番地は呼出し命令がある度にすなわちClIC2
番地の両方で実行さnる為、不良が発生したのがC□番
地で呼出さ扛たのかt C2番地で吐出さnfcかは、
記憶装置4の内容を試験パターン発生終了後に読んでも
不明である。この為どこで不良が発生したのかヲ調べる
必要が生じる。不良が生じた呼出し番地を調べる為には
、一度パターン記憶部1のO番地から01 番地とC2
番地の間の中はどまで試験パターンを発生させ不良が生
じるかどうかを調べ、さらにC2番地まで調べるという
様に呼出し番地を順々に実行し不良が生じるかどうかを
調べなけnばならない。すなわち、試験パターンを呼出
し命令が設定さnである毎に、分割して調べることにな
る。しかし、被試験ICの機能が非常に複雑になり、集
積度も向上すると試験パターン内にサブルーチンが@繁
に設定さnる様になり、サブルーチン内の試験パターン
で不良が生じるとその調査は非常に困難になり、かつ多
大の時間と労力を必要とする欠点がめった。
Test patterns are generated in order from address O in pattern storage section 1, but if a call (CALL) instruction that generates a test pattern in the subroutine section is set in the microinstruction at addresses 01 and C2. +('After the occurrence of address 1, the Kashio address moves to the specified n subroutine. 1 Generates address A2 from A1 of this subroutine, generates a pattern at address 01+1 from that IL, and then from C2 It executes sequentially up to the address, and when it generates the C2 address, it goes back to the subroutine and generates the QA1 to 2 addresses, and then generates the C2+1 address.In this way, each time the call instruction is set as a microinstruction, the subroutine is executed. Address A2 will be generated from 80.At this time, if the defect occurs while the address A2 is occurring from subroutine A1, the defective address written to the storage device 4 will be from A to A2. However, addresses from this person 1 to A2 are changed every time there is a call command, that is, ClIC2.
Since the execution is executed at both addresses, it is difficult to determine whether the fault occurred because the call was made at address C□ or whether the nfc was discharged at address C2.
Even if the contents of the storage device 4 are read after the test pattern generation ends, it is unclear. For this reason, it is necessary to investigate where the defect occurred. In order to check the call address where the defect occurred, first check the pattern storage unit 1 from address O to address 01 and C2.
The test pattern must be generated between addresses to see if a defect occurs, and then the call addresses must be executed in order to see if a defect occurs, checking up to address C2. That is, the test pattern is divided and examined every time n call instructions are set. However, as the functions of ICs under test become extremely complex and the degree of integration increases, subroutines are frequently set in test patterns, and if a defect occurs in a test pattern within a subroutine, it becomes very difficult to investigate. The disadvantages are that it is difficult and requires a lot of time and effort.

本発明は上記欠点を除き、呼出し命令を実行したパター
ン記憶の番地が曹込まnる記憶レジスタを追加し、サブ
ルーチン内で不良が生じた場合でも記憶装置の内容を読
めばサブルーチンの呼出し命令の番地を知ることができ
るようにして、被試験集積回路の不良の原因調査に要す
る時間を短縮できる集積回路試験装置tを提供するもの
である。
The present invention eliminates the above-mentioned drawbacks by adding a memory register that stores the address of the pattern memory where the calling instruction was executed, so that even if a defect occurs in the subroutine, reading the contents of the storage device will allow the address of the calling instruction of the subroutine to be stored. An object of the present invention is to provide an integrated circuit testing apparatus t that can shorten the time required to investigate the cause of a defect in an integrated circuit under test.

本発明の集積回路試験装置はマイクロ命令記憶部と、前
記マイクロ命令記憶部からのマイクロ命令を解読しアド
レス信号を出力するアドレス制御部と、前記アドレス信
号を受けて試験パターン信号と期待パターン信号とを発
生するパターン記憶部と、前記試験パターン信号により
被試験集積回路力・ら出力さn;6試験データ情報と前
記期待パターン信号とを比較し判定する判定回路と、前
記アドレス制御部から出力さnるアドレス信号のうち呼
出し命令全実行した前記パターン記憶部の番地を記憶す
る記憶レジスタと、前記判定回路が不良と判定したとき
に該判定回路から出力さnる誓込み信号を受ける書込み
制御部と、前記誓込みml]御部と前記アドレス制御部
とからの信号により前記記憶レジスタから出力ざするバ
クーン記憶部ノ番地と前記判定回路から出力さnるビン
毎の良/不良情報とを記憶する記憶装置とを含む不良解
析装置を内蔵して構成さrLる。
The integrated circuit testing device of the present invention includes a microinstruction storage section, an address control section that decodes microinstructions from the microinstruction storage section and outputs an address signal, and receives the address signal and outputs a test pattern signal and an expected pattern signal. a pattern storage unit that generates an output from the integrated circuit under test according to the test pattern signal; a determination circuit that compares and determines the test data information and the expected pattern signal; a storage register that stores the address of the pattern storage section where all the call commands have been executed among the address signals; and a write control section that receives the pledge signal output from the determination circuit when the determination circuit determines that the determination circuit is defective. and the address control section and the address control section store the address of the Bakun storage section to be outputted from the storage register and the good/bad information for each bin outputted from the judgment circuit. It is constructed by incorporating a failure analysis device including a storage device for storing data.

次に本発明の実施例について図面を用いて説明する。Next, embodiments of the present invention will be described using the drawings.

第2図は本発明の一実施例のブロック図である。FIG. 2 is a block diagram of one embodiment of the present invention.

9− この実施例の集積回路試験装置は、マイクロ命令記憶部
2と、このマイクロ命令記憶部2がらのマイクロ命令を
解読しアドレス信号1(l出力するアドレス制御部3と
、アドレス信号1oを受けて試験パターン信号9と期待
パターン信号8とを発生するパターン記憶部lと、試験
パターン信号9により被試験■C6から出力さnる試験
データ情報16と期待パターン信号8とを比較し判定す
る判定回路7と、アドレス制御部3がら出刃さnるアド
レス信号lOのうち叶出し命令を実行したパターン記憶
部3の番地を記憶する記憶レジスタ13と、判定回路7
が不良と判定したときに該判定回路7から出力さfLる
誓込み信号を11受は誓込み1lIIJ御信号15を出
力する書込み’+filJ御信号15とアドレス信号1
0により記憶レジスタ13から出力さnるパターン記憶
部の番地と判定回路7がら出力さrしるピン毎の良/不
良情報12とを記憶する記憶装置14とを含む不良解析
装置全内蔵して構成さγムる。
9- The integrated circuit testing apparatus of this embodiment includes a microinstruction storage section 2, an address control section 3 that decodes the microinstructions in the microinstruction storage section 2 and outputs an address signal 1 (l), and an address control section 3 that receives an address signal 1o. A pattern storage unit 1 that generates a test pattern signal 9 and an expected pattern signal 8, and a judgment that compares the test data information 16 outputted from the C6 under test with the test pattern signal 9 and the expected pattern signal 8. A circuit 7, a memory register 13 that stores the address of the pattern storage unit 3 at which the pattern storage instruction has been executed, out of the address signal lO received from the address control unit 3, and a determination circuit 7.
The judgment circuit 7 outputs a pledge signal fL when it is determined to be defective.
The failure analysis device is fully built-in, including a storage device 14 for storing the address of the pattern storage section outputted from the storage register 13 by 0 and the pass/fail information 12 for each pin outputted from the judgment circuit 7. It is configured.

この実施例の集積回路試験装置は、アドレス制10− 偏部3がマイクロ命令を解読し、呼出し命令を実行する
朋に、呼出し命令全実行したパターン記憶部10番地が
曹込−まrしる記憶レジスタ13を追加し、また判定回
路7で不良と論う判定をして誓込み信号11が出力さn
たとき1パタ一ン記憶部1の不良番地と判定回路7から
のピン毎の良/不良信号12と記憶レジスタ13の内容
をも一諸に書込み可能とした記憶装置14とした点にお
いて従来も異っている。
In the integrated circuit testing apparatus of this embodiment, when the address system 10-part 3 decodes the micro-instruction and executes the calling instruction, the address of the pattern storage part 10 where all the calling instructions have been executed is recorded. A memory register 13 is added, and the determination circuit 7 determines that it is defective, and the pledge signal 11 is output.
It is different from the conventional technology in that the memory device 14 is configured such that when one pattern is stored, the defective address in the memory section 1, the pass/fail signal 12 for each pin from the determination circuit 7, and the contents of the memory register 13 can be written all at once. It's different.

次に、この実施例の動作について説明する。Next, the operation of this embodiment will be explained.

試験パターン9の発生時に、パターン記憶部3のC1番
地の呼出し命令を実行すると記憶レジスタ13にC□が
入る。このときサブルーチン八〇からA2番地の間で不
良が生じると、その時のパターン記憶部lの番地と、判
定回路7からのピン毎の良/不良情報と共に記憶レジス
タ13の内容も記憶装置14に書きこまする。
When the test pattern 9 is generated, when a call instruction for address C1 of the pattern storage section 3 is executed, C□ is stored in the storage register 13. At this time, if a defect occurs between subroutine 80 and address A2, the contents of the memory register 13 are written to the memory device 14 along with the address of the pattern memory section l at that time and the pass/fail information for each pin from the determination circuit 7. Komaruru.

すなわち、サブルーチン内で不良が生じた場合に記憶装
置14にはそのサブルーチンの呼出し命令の番地も共に
記憶さ扛るので試験パターン発生終了後に記憶装置14
の内容tWみとることで、直ちにサブルーチンの呼出し
・−令の番地を知ることが可能となる。この為、従来の
様にサブルーチン内で不良が発生した場合の原因調査時
間の短縮が図1しる。
That is, if a defect occurs in a subroutine, the address of the calling instruction for that subroutine is also stored in the storage device 14, so that the address of the calling instruction for that subroutine is also stored in the storage device 14.
By reading the contents tW, it becomes possible to immediately know the address of the subroutine call/-instruction. For this reason, the time taken to investigate the cause when a defect occurs in a subroutine, as in the conventional method, is reduced, as shown in FIG.

以上詳細に説明したように、本発明にょ扛ば、サブルー
チン内で不良が生じた場合でも記憶装置の内容kdめげ
サブルーチンの叶出し命令の番地を知ることかでさ、被
試験乗積回路の不良の原因調査に安する時間全短縮でき
る集積回路試験装置が得ら扛るのでその効果は大きい。
As explained in detail above, according to the present invention, even if a defect occurs in a subroutine, it is possible to know the contents of the storage device and the address of the output instruction of the subroutine. This has a great effect because it provides an integrated circuit testing device that can completely shorten the time it takes to investigate the cause of a problem.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(は従来の集積回路試験装置の不良解析装置の一
例のブロック図、第2図は本発明の一実施例のブロック
図である。 l・・・・・・パターン記1急部、2・・・・・・マイ
クロ命令記憶部、3・・・・・・アドレスfilJA部
、4・・・・・・記憶装置、5・・・・・・薔込み制御
部、6・・・・・・被試験IC17・・・・・・判定回
路、8・・・・・・期待パターン信号、9・・・・・・
試験パターン信号、10・・・・・・アドレス信号、1
1・・・・・・誓き込み制御信号、12・・・・・・ピ
ン毎の良/不良情報信号、13・・・・・・記憶レジス
タ、14・・・・・・記憶装置、15・・・・・・曹込
み制御信号、16・旧・・試験パターン1g号。 13− 第 /配 /2     3    .3 ヂ Fl/Z’1!Q’   記4・恩 C2鍵i A/ 2 ダ2    記φ濁ジ、  )3 乙   レメヌタ d     ′ 官民、検1            
                /2−・ に   
               l/ナタ 定    
     −
FIG. 1 is a block diagram of an example of a conventional failure analysis device for integrated circuit testing equipment, and FIG. 2 is a block diagram of an embodiment of the present invention. 2...Microinstruction storage unit, 3...Address filJA unit, 4...Storage device, 5...Installation control unit, 6... ...IC17 under test...Judgment circuit, 8...Expected pattern signal, 9...
Test pattern signal, 10...Address signal, 1
1...Oath control signal, 12...Good/bad information signal for each pin, 13...Storage register, 14...Storage device, 15・・・・・・Sakomi control signal, 16・Old・・Test pattern No. 1g. 13- No./Part/2 3. 3 もFl/Z'1! Q' 4・Thanks C2 key i A/ 2 Da 2 Record φ turbidity, ) 3 O Remenuta d' Public and private, Ken 1
/2-・ to
l/nata sada

Claims (1)

【特許請求の範囲】[Claims] マイクロ命令記憶部と、前記マイクロ命令記憶部からの
マイクロ命令を解読しアドレス信号を出力するアドレス
制御部と、前記アドレス信号を受けて試験パターン信号
と期待パターン信号とを発生するパターン記憶部と、前
記試験パターン信号により被試験集積回路から出力さn
る試験データ情報と前記期待パターン信号とを比較し判
定する判定回路と、前記アドレス制御部から出力さt″
しるアドレス信号のうち呼出し命令を実行した前記パタ
ーン記憶部の番地を記憶する記憶レジスタと、前記判定
回路が不良と判定したときに該判定回路から出力さnる
曹込み信号を受ける書込み制御部と、前記簀込み制御部
と前記アドレス制御部とからの信号により前記記憶レジ
スタから出力さnるパターン記1.は部の番地と前記判
定回路から出刃さ扛るピン毎の良/不良情報とを記憶す
る記憶装置とを含む不良解析装置を内蔵したことを特徴
とする集積回路試験装置。
a microinstruction storage section, an address control section that decodes the microinstruction from the microinstruction storage section and outputs an address signal, and a pattern storage section that receives the address signal and generates a test pattern signal and an expected pattern signal; output from the integrated circuit under test according to the test pattern signal.
a determination circuit that compares and determines the test data information and the expected pattern signal; and a determination circuit that compares the test data information and the expected pattern signal, and
a memory register that stores an address of the pattern storage unit that executed the call command among the address signals to be executed; and a write control unit that receives a write-in signal output from the determination circuit when the determination circuit determines that the determination circuit is defective. and pattern description 1. output from the storage register according to signals from the storage control section and the address control section. 1. An integrated circuit testing device comprising a built-in failure analysis device including a storage device for storing the part address and pass/fail information for each pin extracted from the determination circuit.
JP56150391A 1981-09-22 1981-09-22 Device for testing integrated circuit Pending JPS5852578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150391A JPS5852578A (en) 1981-09-22 1981-09-22 Device for testing integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150391A JPS5852578A (en) 1981-09-22 1981-09-22 Device for testing integrated circuit

Publications (1)

Publication Number Publication Date
JPS5852578A true JPS5852578A (en) 1983-03-28

Family

ID=15495961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150391A Pending JPS5852578A (en) 1981-09-22 1981-09-22 Device for testing integrated circuit

Country Status (1)

Country Link
JP (1) JPS5852578A (en)

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