JPS5851228B2 - Ｍｉｓ構造体内の界面領域準位の電荷量を測定する装置 - Google Patents
Ｍｉｓ構造体内の界面領域準位の電荷量を測定する装置Info
- Publication number
- JPS5851228B2 JPS5851228B2 JP51038336A JP3833676A JPS5851228B2 JP S5851228 B2 JPS5851228 B2 JP S5851228B2 JP 51038336 A JP51038336 A JP 51038336A JP 3833676 A JP3833676 A JP 3833676A JP S5851228 B2 JPS5851228 B2 JP S5851228B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- measuring
- voltage
- insulator
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 59
- 230000008859 change Effects 0.000 claims description 41
- 239000012212 insulator Substances 0.000 claims description 36
- 238000005259 measurement Methods 0.000 claims description 36
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 230000002123 temporal effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 13
- 238000000691 measurement method Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/572,237 US3995216A (en) | 1975-04-28 | 1975-04-28 | Technique for measuring surface states in metal-insulator-semiconductor structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51131667A JPS51131667A (en) | 1976-11-16 |
| JPS5851228B2 true JPS5851228B2 (ja) | 1983-11-15 |
Family
ID=24286937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51038336A Expired JPS5851228B2 (ja) | 1975-04-28 | 1976-04-07 | Ｍｉｓ構造体内の界面領域準位の電荷量を測定する装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3995216A (enExample) |
| JP (1) | JPS5851228B2 (enExample) |
| DE (1) | DE2615757A1 (enExample) |
| FR (1) | FR2309878A1 (enExample) |
| GB (1) | GB1520961A (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168432A (en) * | 1978-01-16 | 1979-09-18 | Rca Corporation | Method of testing radiation hardness of a semiconductor device |
| US4218143A (en) * | 1979-01-22 | 1980-08-19 | The United States Of America As Represented By The Secretary Of The Navy | Lattice matching measurement device |
| US4325025A (en) * | 1980-05-22 | 1982-04-13 | International Business Machines Corporation | Automated channel doping measuring circuit |
| US4509012A (en) * | 1982-12-30 | 1985-04-02 | Lin Shi Tron | Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode |
| EP0196804B1 (en) * | 1985-03-11 | 1991-01-23 | Nippon Telegraph And Telephone Corporation | Method and apparatus for testing integrated electronic device |
| US4758786A (en) * | 1986-08-06 | 1988-07-19 | Molecular Devices Corporation | Method of analyzing semiconductor systems |
| US4812756A (en) * | 1987-08-26 | 1989-03-14 | International Business Machines Corporation | Contactless technique for semicondutor wafer testing |
| JP2886176B2 (ja) * | 1989-03-23 | 1999-04-26 | 三菱電機株式会社 | 埋め込みチャネルの物性特性測定法 |
| US4942357A (en) * | 1989-08-07 | 1990-07-17 | Eastman Kodak Company | Method of testing a charge-coupled device |
| US4978915A (en) * | 1989-11-07 | 1990-12-18 | At&T Bell Laboratories | Method of manufacturing semiconductor devices involving the detection of impurities |
| US5023561A (en) * | 1990-05-04 | 1991-06-11 | Solid State Measurements, Inc. | Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer |
| US5216362A (en) * | 1991-10-08 | 1993-06-01 | International Business Machines Corporation | Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers |
| JPH06349920A (ja) * | 1993-06-08 | 1994-12-22 | Dainippon Screen Mfg Co Ltd | 半導体ウェハの電荷量測定方法 |
| US5500607A (en) * | 1993-12-22 | 1996-03-19 | International Business Machines Corporation | Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer |
| KR960026519A (ko) * | 1994-12-31 | 1996-07-22 | 김주용 | 유전체에 대한 신뢰성 측정 방법 |
| JP3688467B2 (ja) * | 1997-08-20 | 2005-08-31 | 大日本スクリーン製造株式会社 | 不純物量測定方法および装置 |
| US5945832A (en) * | 1998-02-17 | 1999-08-31 | Motorola, Inc. | Structure and method of measuring electrical characteristics of a molecule |
| US6101519A (en) * | 1998-06-17 | 2000-08-08 | International Business Machines Corporation | Method for efficiently determining a fermi-dirac integrals |
| EP1256006B1 (en) | 1999-10-19 | 2006-07-19 | Solid State Measurements, Inc. | Non-invasive electrical measurement of semiconductor wafers |
| US6597193B2 (en) * | 2001-01-26 | 2003-07-22 | Semiconductor Diagnostics, Inc. | Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current |
| US6680621B2 (en) * | 2001-01-26 | 2004-01-20 | Semiconductor Diagnostics, Inc. | Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current |
| US7012438B1 (en) | 2002-07-10 | 2006-03-14 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of an insulating film |
| US7248062B1 (en) | 2002-11-04 | 2007-07-24 | Kla-Tencor Technologies Corp. | Contactless charge measurement of product wafers and control of corona generation and deposition |
| US7472322B1 (en) | 2005-05-31 | 2008-12-30 | Integrated Device Technology, Inc. | On-chip interface trap characterization and monitoring |
| US7893703B2 (en) * | 2005-08-19 | 2011-02-22 | Kla-Tencor Technologies Corp. | Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer |
| US7929349B2 (en) * | 2007-02-28 | 2011-04-19 | Samsung Electronics Co., Ltd. | Method of operating nonvolatile memory device |
| JP2008217971A (ja) * | 2007-02-28 | 2008-09-18 | Samsung Electronics Co Ltd | 不揮発性メモリ素子の作動方法 |
| US20080290889A1 (en) * | 2007-05-24 | 2008-11-27 | Solid State Measurements, Inc. | Method of destructive testing the dielectric layer of a semiconductor wafer or sample |
| KR20240050091A (ko) * | 2022-10-11 | 2024-04-18 | 에스케이하이닉스 주식회사 | 유효 일함수 판단용 테스트 소자 및 이의 제조 방법, 그리고 유효 일함수 판단 방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3840809A (en) * | 1972-12-04 | 1974-10-08 | Ibm | Non-destructive measurement of dielectric properties |
-
1975
- 1975-04-28 US US05/572,237 patent/US3995216A/en not_active Expired - Lifetime
-
1976
- 1976-03-02 FR FR7606745A patent/FR2309878A1/fr active Granted
- 1976-03-18 GB GB10950/76A patent/GB1520961A/en not_active Expired
- 1976-04-07 JP JP51038336A patent/JPS5851228B2/ja not_active Expired
- 1976-04-10 DE DE19762615757 patent/DE2615757A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2309878A1 (fr) | 1976-11-26 |
| JPS51131667A (en) | 1976-11-16 |
| US3995216A (en) | 1976-11-30 |
| DE2615757A1 (de) | 1976-11-11 |
| GB1520961A (en) | 1978-08-09 |
| FR2309878B1 (enExample) | 1979-02-02 |
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