FR2309878A1 - Procede de mesure des etats de surface dans des structures metal-isolation-semi-conducteur et dispositif en resultant - Google Patents

Procede de mesure des etats de surface dans des structures metal-isolation-semi-conducteur et dispositif en resultant

Info

Publication number
FR2309878A1
FR2309878A1 FR7606745A FR7606745A FR2309878A1 FR 2309878 A1 FR2309878 A1 FR 2309878A1 FR 7606745 A FR7606745 A FR 7606745A FR 7606745 A FR7606745 A FR 7606745A FR 2309878 A1 FR2309878 A1 FR 2309878A1
Authority
FR
France
Prior art keywords
insulation
semi
metal
conductive structures
measuring surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7606745A
Other languages
English (en)
Other versions
FR2309878B1 (fr
Inventor
Bob H Yun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2309878A1 publication Critical patent/FR2309878A1/fr
Application granted granted Critical
Publication of FR2309878B1 publication Critical patent/FR2309878B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7606745A 1975-04-28 1976-03-02 Procede de mesure des etats de surface dans des structures metal-isolation-semi-conducteur et dispositif en resultant Granted FR2309878A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/572,237 US3995216A (en) 1975-04-28 1975-04-28 Technique for measuring surface states in metal-insulator-semiconductor structures

Publications (2)

Publication Number Publication Date
FR2309878A1 true FR2309878A1 (fr) 1976-11-26
FR2309878B1 FR2309878B1 (fr) 1979-02-02

Family

ID=24286937

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606745A Granted FR2309878A1 (fr) 1975-04-28 1976-03-02 Procede de mesure des etats de surface dans des structures metal-isolation-semi-conducteur et dispositif en resultant

Country Status (5)

Country Link
US (1) US3995216A (fr)
JP (1) JPS5851228B2 (fr)
DE (1) DE2615757A1 (fr)
FR (1) FR2309878A1 (fr)
GB (1) GB1520961A (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168432A (en) * 1978-01-16 1979-09-18 Rca Corporation Method of testing radiation hardness of a semiconductor device
US4218143A (en) * 1979-01-22 1980-08-19 The United States Of America As Represented By The Secretary Of The Navy Lattice matching measurement device
US4325025A (en) * 1980-05-22 1982-04-13 International Business Machines Corporation Automated channel doping measuring circuit
US4509012A (en) * 1982-12-30 1985-04-02 Lin Shi Tron Method for determining the characteristic behavior of a metal-insulator-semiconductor device in a deep depletion mode
EP0196804B1 (fr) * 1985-03-11 1991-01-23 Nippon Telegraph And Telephone Corporation Méthode et appareil pour tester un dispositif électronique intégré
US4758786A (en) * 1986-08-06 1988-07-19 Molecular Devices Corporation Method of analyzing semiconductor systems
US4812756A (en) * 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
JP2886176B2 (ja) * 1989-03-23 1999-04-26 三菱電機株式会社 埋め込みチャネルの物性特性測定法
US4942357A (en) * 1989-08-07 1990-07-17 Eastman Kodak Company Method of testing a charge-coupled device
US4978915A (en) * 1989-11-07 1990-12-18 At&T Bell Laboratories Method of manufacturing semiconductor devices involving the detection of impurities
US5023561A (en) * 1990-05-04 1991-06-11 Solid State Measurements, Inc. Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer
US5216362A (en) * 1991-10-08 1993-06-01 International Business Machines Corporation Contactless technique for measuring epitaxial dopant concentration profiles in semiconductor wafers
JPH06349920A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 半導体ウェハの電荷量測定方法
US5500607A (en) * 1993-12-22 1996-03-19 International Business Machines Corporation Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer
KR960026519A (ko) * 1994-12-31 1996-07-22 김주용 유전체에 대한 신뢰성 측정 방법
JP3688467B2 (ja) * 1997-08-20 2005-08-31 大日本スクリーン製造株式会社 不純物量測定方法および装置
US5945832A (en) * 1998-02-17 1999-08-31 Motorola, Inc. Structure and method of measuring electrical characteristics of a molecule
US6101519A (en) * 1998-06-17 2000-08-08 International Business Machines Corporation Method for efficiently determining a fermi-dirac integrals
DE60029483T2 (de) 1999-10-19 2007-02-15 Solid State Measurements, Inc. Nicht-invasive elektrische messung von halbleiterscheiben
US6680621B2 (en) * 2001-01-26 2004-01-20 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US6597193B2 (en) * 2001-01-26 2003-07-22 Semiconductor Diagnostics, Inc. Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current
US7012438B1 (en) * 2002-07-10 2006-03-14 Kla-Tencor Technologies Corp. Methods and systems for determining a property of an insulating film
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
US7472322B1 (en) 2005-05-31 2008-12-30 Integrated Device Technology, Inc. On-chip interface trap characterization and monitoring
US20070109003A1 (en) * 2005-08-19 2007-05-17 Kla-Tencor Technologies Corp. Test Pads, Methods and Systems for Measuring Properties of a Wafer
US7929349B2 (en) * 2007-02-28 2011-04-19 Samsung Electronics Co., Ltd. Method of operating nonvolatile memory device
US8018781B2 (en) * 2007-02-28 2011-09-13 Samsung Electronics, Co., Ltd. Method of operating nonvolatile memory device
US20080290889A1 (en) * 2007-05-24 2008-11-27 Solid State Measurements, Inc. Method of destructive testing the dielectric layer of a semiconductor wafer or sample

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2209109A1 (fr) * 1972-12-04 1974-06-28 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2209109A1 (fr) * 1972-12-04 1974-06-28 Ibm

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARTICLE: "DIRECT DISPLAY OF ELECTRON BACK TUNNELING IN MNOS MEMORY CAPACITORS" DE YUN) *
REVUE US "APPLIED PHYSICS LETTERS", VOLUME 23, NO 3, 1-08-1973, PAGES 152-153 *

Also Published As

Publication number Publication date
DE2615757A1 (de) 1976-11-11
FR2309878B1 (fr) 1979-02-02
GB1520961A (en) 1978-08-09
US3995216A (en) 1976-11-30
JPS51131667A (en) 1976-11-16
JPS5851228B2 (ja) 1983-11-15

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Legal Events

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ST Notification of lapse