JPS584967A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS584967A
JPS584967A JP56102565A JP10256581A JPS584967A JP S584967 A JPS584967 A JP S584967A JP 56102565 A JP56102565 A JP 56102565A JP 10256581 A JP10256581 A JP 10256581A JP S584967 A JPS584967 A JP S584967A
Authority
JP
Japan
Prior art keywords
layer
well
charge
region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56102565A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140504B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
伸夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56102565A priority Critical patent/JPS584967A/ja
Publication of JPS584967A publication Critical patent/JPS584967A/ja
Publication of JPH0140504B2 publication Critical patent/JPH0140504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP56102565A 1981-06-30 1981-06-30 半導体記憶装置 Granted JPS584967A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56102565A JPS584967A (ja) 1981-06-30 1981-06-30 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56102565A JPS584967A (ja) 1981-06-30 1981-06-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS584967A true JPS584967A (ja) 1983-01-12
JPH0140504B2 JPH0140504B2 (enrdf_load_stackoverflow) 1989-08-29

Family

ID=14330737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56102565A Granted JPS584967A (ja) 1981-06-30 1981-06-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS584967A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988008617A1 (en) * 1987-04-20 1988-11-03 Research Corporation Technologies, Inc. Buried well dram
US5197336A (en) * 1990-01-29 1993-03-30 Fuji Electric Co., Ltd. Karman vortex flow meter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988008617A1 (en) * 1987-04-20 1988-11-03 Research Corporation Technologies, Inc. Buried well dram
US5197336A (en) * 1990-01-29 1993-03-30 Fuji Electric Co., Ltd. Karman vortex flow meter

Also Published As

Publication number Publication date
JPH0140504B2 (enrdf_load_stackoverflow) 1989-08-29

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