JPS5849036B2 - ハクマクトランジスタ - Google Patents

ハクマクトランジスタ

Info

Publication number
JPS5849036B2
JPS5849036B2 JP49096863A JP9686374A JPS5849036B2 JP S5849036 B2 JPS5849036 B2 JP S5849036B2 JP 49096863 A JP49096863 A JP 49096863A JP 9686374 A JP9686374 A JP 9686374A JP S5849036 B2 JPS5849036 B2 JP S5849036B2
Authority
JP
Japan
Prior art keywords
thin film
electrode
movable
gate electrode
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49096863A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5124884A (cg-RX-API-DMAC10.html
Inventor
育弘 鵜飼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HOSHIDENKI SEIZO KK
Original Assignee
HOSHIDENKI SEIZO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HOSHIDENKI SEIZO KK filed Critical HOSHIDENKI SEIZO KK
Priority to JP49096863A priority Critical patent/JPS5849036B2/ja
Publication of JPS5124884A publication Critical patent/JPS5124884A/ja
Publication of JPS5849036B2 publication Critical patent/JPS5849036B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP49096863A 1974-08-23 1974-08-23 ハクマクトランジスタ Expired JPS5849036B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49096863A JPS5849036B2 (ja) 1974-08-23 1974-08-23 ハクマクトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49096863A JPS5849036B2 (ja) 1974-08-23 1974-08-23 ハクマクトランジスタ

Publications (2)

Publication Number Publication Date
JPS5124884A JPS5124884A (cg-RX-API-DMAC10.html) 1976-02-28
JPS5849036B2 true JPS5849036B2 (ja) 1983-11-01

Family

ID=14176279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49096863A Expired JPS5849036B2 (ja) 1974-08-23 1974-08-23 ハクマクトランジスタ

Country Status (1)

Country Link
JP (1) JPS5849036B2 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10152152B2 (en) 2014-10-02 2018-12-11 National Institute Of Advanced Industrial Science And Technology Electret element and manufacturing method therefor, sensor, electronic circuit, and input device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE408194A (cg-RX-API-DMAC10.html) * 1934-03-02

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10152152B2 (en) 2014-10-02 2018-12-11 National Institute Of Advanced Industrial Science And Technology Electret element and manufacturing method therefor, sensor, electronic circuit, and input device

Also Published As

Publication number Publication date
JPS5124884A (cg-RX-API-DMAC10.html) 1976-02-28

Similar Documents

Publication Publication Date Title
JP2007318061A (ja) デュアルゲート有機トランジスタを用いたインバータ
US10585058B2 (en) FET based humidity sensor with barrier layer protecting gate dielectric
JP2013511139A (ja) 自己整列グラフェン・トランジスタ
JPS58178572A (ja) 移動度変調形電界効果トランジスタ
CN109282924B (zh) 一种压力传感器及其制备方法
KR102220445B1 (ko) 반도체 소자 및 그 제조 방법
JPH09181367A (ja) 薄膜トランジスタおよびその製造方法
JPH10284729A5 (ja) 絶縁ゲートトランジスタ素子
JP2737780B2 (ja) Ｍｏｓトランジスタ
WO2005064701A3 (en) Electronic device
JPS5849036B2 (ja) ハクマクトランジスタ
KR102772338B1 (ko) 절연체-금속 상 변화 재료를 사용하는 반도체 장치
NO116329B (cg-RX-API-DMAC10.html)
JPS5938747B2 (ja) 半導体装置及びその使用方法
WO2006006369A1 (ja) 半導体装置
KR20190067556A (ko) 산화물 반도체 박막 트랜지스터 및 그 제조 방법
CN111129150B (zh) 一种铁电薄膜晶体管及其制造方法
KR0148420B1 (ko) 금속 초박막을 이용한 압전소자
JPS61201470A (ja) 多端子素子
JP2000340788A5 (cg-RX-API-DMAC10.html)
KR0155302B1 (ko) 박막 전계효과 트랜지스터
JPS5635465A (en) Semiconductor device
JP3837078B2 (ja) 強磁性単電子素子
KR20220064814A (ko) 극성 분자 박막을 포함하는 이차원 나노물질 트랜지스터 및 극성 분자 박막을 이용한 이차원 나노물질 트랜지스터의 문턱 전압 제어 방법
CN116207161A (zh) 一种具有辅助栅结构的旁栅AlGaN/GaN异质结场效应晶体管及工作方法与应用