JPS5848380A - Lamp annealing device - Google Patents
Lamp annealing deviceInfo
- Publication number
- JPS5848380A JPS5848380A JP14725781A JP14725781A JPS5848380A JP S5848380 A JPS5848380 A JP S5848380A JP 14725781 A JP14725781 A JP 14725781A JP 14725781 A JP14725781 A JP 14725781A JP S5848380 A JPS5848380 A JP S5848380A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- temperature
- substrate
- sample
- lamp annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Control Of Resistance Heating (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 本発明はランプ・了ニール装置に関する。[Detailed description of the invention] TECHNICAL FIELD The present invention relates to a lamp/clearing device.
最近、：ｆｏｋｎａＣ，Ｃ１５”Ｌａｔａｒａｌｘｐ＝
ｔａｚｙ ｂｙ ｓｇａｔａｔｔＢｏｌｉｄｉｆｉ
ｃａｔｉｏ％ ｆｏｒＧｒｏｗｔｈ ｏｆ Ｓｉｎ
ｇｌｅ−Ｃｒｙａｔａｌ Ｂｉ Ｗｉｌｔｙｈａ
ｏｎ工５ａｓｔａｔｏｒｓ”＋ムラ９１゜
ＦＡｙａ、Ｌｓｔｔ、、３８．（５）、３６５（１９８
１）に示されている如く、被加熱物基体を一定１１１Ｍ
に加熱しながらその表面を基体温置工り瞬時昇温する熱
処理法が提案されて＾る。前記文献に於ては、基体加熱
をカーボン、ヒーターにぷり、その表面温１上昇もスト
ライプ状カーボン・ヒーターを基体表面で走査させるこ
とに１り基体表面を瞬時加熱昇温している。Recently: foknaC, C15”Lateralxp=
tazy by sgatattBolidifi
cation% for Growth of Sin
gle-Cryatal Bi Wiltyha
on engineering 5 astators” + unevenness 91° FAya, Lstt, 38. (5), 365 (198
As shown in 1), the substrate to be heated is kept at a constant 111M.
A heat treatment method has been proposed that instantaneously raises the temperature of the surface of the substrate while heating it. In the above-mentioned document, the substrate is heated using carbon and a heater, and the surface temperature of the substrate is instantaneously heated by scanning a striped carbon heater over the substrate surface.
しかし、前記従来技術では、ヒーターからの汚染物質の
発生と被子ニール物への付着、ヒータ一温度や被加工物
表面精Ｉの精密さ等が不足するという欠点かある。However, the above-mentioned conventional technology has drawbacks such as generation of contaminants from the heater and adhesion to the object being coated, and lack of precision in heater temperature and surface finish of the workpiece.
本−明はかかる欠点をなくシ、汚染のな匹清浄な加熱と
、温ｇの制御性の良好な熱処理装置を提供することを目
的とする。The object of the present invention is to eliminate such drawbacks and to provide a heat treatment apparatus that can perform clean heating without contamination and has good controllability of temperature g.
上記目的１！一連成するための本発明の基本的な構成祉
、鼓了ニール物基体を加熱しながら被加工物表面を瞬時
基体温度１り高温化する加熱処理装置において、基体温
度昇温おＬび基体表面温度昇温のいずれも水銀ランプ、
ハロゲンランプ等のランプおよびその光学系に工り行な
うことを％黴とする。Above purpose 1! The basic structure of the present invention for forming a series of coatings is as follows: In a heat treatment apparatus that instantaneously raises the surface of a workpiece to a temperature of 1 degree higher than the substrate temperature while heating a coated substrate, the temperature of the substrate increases and the substrate surface increases. Both temperature rises are done using mercury lamps,
Percent mold is applied to lamps such as halogen lamps and their optical systems.
以下、実施例にエリ具体的に本発明を説明する。Hereinafter, the present invention will be specifically explained with reference to Examples.
第１図は本発明の一実施例を示す。第１図では、石英管
１をノズル２から導入した窒素ガスで満たし、石英製試
料台３に試料４ｆ主面を下方に向けて設置し、石英棒５
で掃引で謙るようにしである。FIG. 1 shows an embodiment of the invention. In FIG. 1, a quartz tube 1 is filled with nitrogen gas introduced from a nozzle 2, and a sample 4f is placed on a quartz sample stand 3 with the main surface facing downward, and a quartz rod 5
It's like a sweep and a humility.
試料４にはハロゲンランプ６等と７からの光を反射鏡８
等を用論て照射し、ランプ６等は低パワーで試料のバッ
ク・了ツブ加熱を行な論、ランプ７は高パワーで試料表
面を試料基体温［より高める為に用りられ、瞬時加熱を
可能にするため、試料４は所定の速ｌでランプ７０表面
を通過する様に引出し棒５で帰引する。この場合、バッ
ク・アップ加熱用にランプ６、反射鏡８等を石英管ｌの
他の部分に配Ｉしても艮＾。Sample 4 has a mirror 8 that reflects light from halogen lamps 6 and 7.
Lamp 6 etc. are used to heat the sample back and forth at low power, while lamp 7 is used at high power to heat the sample surface to a higher temperature than the base temperature of the sample, providing instantaneous heating. In order to make this possible, the sample 4 is returned by the pull-out rod 5 so as to pass over the surface of the lamp 70 at a predetermined speed l. In this case, the lamp 6, reflector 8, etc. for back-up heating may be placed in other parts of the quartz tube.
上記の卯（、ランプ加熱による場合にはランプ自体から
の汚染の発生もなく、石英管内で試料が処理出来るため
清浄さが保たれると共に、ランプ出力の制御が容易であ
り、高精駆温度制御が実現できる効果がある。In the case of lamp heating, there is no contamination from the lamp itself, and the sample can be processed inside the quartz tube, which maintains cleanliness.The lamp output is easy to control, and the temperature is high. It has the effect of achieving control.
【図面の簡単な説明】
第１図は本発明の一実施例を示すランプ・了ニール装置
の断面構造を示す。
１・・石英管 ２・・ノズル ３ｅ・試料台４・・試料
５・・引出し棒 ６．７・・ラップ８・・反射鏡。
以 上
出願人 株式会社鰍訪精工舎BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a cross-sectional structure of a lamp/burner device showing one embodiment of the present invention. 1. Quartz tube 2. Nozzle 3e. Sample stage 4. Sample 5. Pull-out rod 6.7. Wrap 8. Reflector. Applicant: Iwa Seikosha Co., Ltd.
Claims (1)
時基体温Ｉｆ工り高温化する加熱処理装置において、基
体瀉匪昇湛および基体表面温度昇温のいずれも水銀ラン
プ、ハロゲンランプ等のランプおよびその光学系に工す
行なうことを特徴とするランプ・アニール装置。In a heat treatment device that instantaneously raises the surface of annealed object while heating the substrate of the object to be annealed, lamps such as mercury lamps, halogen lamps, etc. A lamp annealing device characterized by a modification to its optical system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14725781A JPS5848380A (en) | 1981-09-18 | 1981-09-18 | Lamp annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14725781A JPS5848380A (en) | 1981-09-18 | 1981-09-18 | Lamp annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5848380A true JPS5848380A (en) | 1983-03-22 |
Family
ID=15426135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14725781A Pending JPS5848380A (en) | 1981-09-18 | 1981-09-18 | Lamp annealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848380A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03294740A (en) * | 1990-04-10 | 1991-12-25 | Ebara Res Co Ltd | Heating method of pure or ultra-pure water |
| JPH06321692A (en) * | 1993-04-15 | 1994-11-22 | Sumitomo Sitix Corp | Production of silicon wafer |
-
1981
- 1981-09-18 JP JP14725781A patent/JPS5848380A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03294740A (en) * | 1990-04-10 | 1991-12-25 | Ebara Res Co Ltd | Heating method of pure or ultra-pure water |
| JPH06321692A (en) * | 1993-04-15 | 1994-11-22 | Sumitomo Sitix Corp | Production of silicon wafer |
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