JPS5846665A - アナログ集積回路装置 - Google Patents

アナログ集積回路装置

Info

Publication number
JPS5846665A
JPS5846665A JP56144297A JP14429781A JPS5846665A JP S5846665 A JPS5846665 A JP S5846665A JP 56144297 A JP56144297 A JP 56144297A JP 14429781 A JP14429781 A JP 14429781A JP S5846665 A JPS5846665 A JP S5846665A
Authority
JP
Japan
Prior art keywords
substrate
matching circuit
integrated circuit
circuit device
analog integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56144297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139219B2 (enrdf_load_stackoverflow
Inventor
Masaaki Nakatani
中谷 正昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56144297A priority Critical patent/JPS5846665A/ja
Publication of JPS5846665A publication Critical patent/JPS5846665A/ja
Publication of JPH0139219B2 publication Critical patent/JPH0139219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56144297A 1981-09-12 1981-09-12 アナログ集積回路装置 Granted JPS5846665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56144297A JPS5846665A (ja) 1981-09-12 1981-09-12 アナログ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56144297A JPS5846665A (ja) 1981-09-12 1981-09-12 アナログ集積回路装置

Publications (2)

Publication Number Publication Date
JPS5846665A true JPS5846665A (ja) 1983-03-18
JPH0139219B2 JPH0139219B2 (enrdf_load_stackoverflow) 1989-08-18

Family

ID=15358787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56144297A Granted JPS5846665A (ja) 1981-09-12 1981-09-12 アナログ集積回路装置

Country Status (1)

Country Link
JP (1) JPS5846665A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860575A (ja) * 1981-10-07 1983-04-11 Nec Corp トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518881A (en) * 1974-07-10 1976-01-24 Sanyo Electric Co Mos gatahandotaishusekikairo
JPS5541024A (en) * 1978-09-15 1980-03-22 Matsushita Electric Works Ltd Photo oscillation circuit
JPS5549007A (en) * 1978-10-04 1980-04-08 Nec Corp High-frequency transistor power amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518881A (en) * 1974-07-10 1976-01-24 Sanyo Electric Co Mos gatahandotaishusekikairo
JPS5541024A (en) * 1978-09-15 1980-03-22 Matsushita Electric Works Ltd Photo oscillation circuit
JPS5549007A (en) * 1978-10-04 1980-04-08 Nec Corp High-frequency transistor power amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860575A (ja) * 1981-10-07 1983-04-11 Nec Corp トランジスタ

Also Published As

Publication number Publication date
JPH0139219B2 (enrdf_load_stackoverflow) 1989-08-18

Similar Documents

Publication Publication Date Title
US4789645A (en) Method for fabrication of monolithic integrated circuits
US4959705A (en) Three metal personalization of application specific monolithic microwave integrated circuit
US5162258A (en) Three metal personalization of application specific monolithic microwave integrated circuit
US3969745A (en) Interconnection in multi element planar structures
US4409608A (en) Recessed interdigitated integrated capacitor
US4731696A (en) Three plate integrated circuit capacitor
US6023086A (en) Semiconductor transistor with stabilizing gate electrode
US4107720A (en) Overlay metallization multi-channel high frequency field effect transistor
US4921814A (en) Method of producing an MMIC
US4876176A (en) Method for fabricating quasi-monolithic integrated circuits
US3737743A (en) High power microwave field effect transistor
US5170235A (en) Semiconductor integrated circuit
US4016643A (en) Overlay metallization field effect transistor
JPH0640591B2 (ja) モノリシツク半導体構造とその製法
US6313512B1 (en) Low source inductance compact FET topology for power amplifiers
US5252843A (en) Semiconductor device having overlapping conductor layers
US5646450A (en) Semiconductor structures and method of manufacturing
US4857975A (en) GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation
JPS5846665A (ja) アナログ集積回路装置
US5031006A (en) Semiconductor device having a Schottky decoupling diode
KR940002769B1 (ko) 오버래핑하는 도전층을 갖는 반도체 장치와 그 제조방법
US4727404A (en) Field effect transistor of the MESFET type for high frequency applications and method of manufacturing such a transistor
JPS5844771A (ja) 接合形電界効果トランジスタおよびその製造方法
JP3455413B2 (ja) 半導体装置
JPH05335487A (ja) 伝送回路素子