JPS5845693B2 - ゾウケイセイホウホウ - Google Patents
ゾウケイセイホウホウInfo
- Publication number
- JPS5845693B2 JPS5845693B2 JP50132206A JP13220675A JPS5845693B2 JP S5845693 B2 JPS5845693 B2 JP S5845693B2 JP 50132206 A JP50132206 A JP 50132206A JP 13220675 A JP13220675 A JP 13220675A JP S5845693 B2 JPS5845693 B2 JP S5845693B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- resist
- radiation
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000000020 Nitrocellulose Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 229920001220 nitrocellulos Polymers 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 229920006254 polymer film Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- -1 poly(methyl methacrylate) Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical group CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical group CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical group CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
- Materials For Photolithography (AREA)
- Graft Or Block Polymers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/534,542 US3985915A (en) | 1974-12-20 | 1974-12-20 | Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5184640A JPS5184640A (oth) | 1976-07-24 |
| JPS5845693B2 true JPS5845693B2 (ja) | 1983-10-12 |
Family
ID=24130514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50132206A Expired JPS5845693B2 (ja) | 1974-12-20 | 1975-11-05 | ゾウケイセイホウホウ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3985915A (oth) |
| JP (1) | JPS5845693B2 (oth) |
| DE (1) | DE2553519A1 (oth) |
| FR (1) | FR2295466A1 (oth) |
| GB (1) | GB1476289A (oth) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55106453A (en) * | 1979-02-08 | 1980-08-15 | Inst Opusuchiei I Neoruganichi | Photograph material |
| DE3045519C2 (de) * | 1980-12-03 | 1983-07-28 | Franz Dr. 7317 Wendlingen Hasselbach | Verfahren zur Erzeugung von mikroskopischen Reliefmustern |
| US4582776A (en) * | 1981-10-09 | 1986-04-15 | Pioneer Electronic Corporation | Information recording disc having light absorbing cellulose nitrate coating |
| JPS61256348A (ja) * | 1985-05-10 | 1986-11-13 | Nec Corp | エネルギ−感応性樹脂 |
| US4837125A (en) * | 1986-03-25 | 1989-06-06 | Siemens Aktiengesellschaft | Electron-beam-sensitive resist material for microstructures in electronics |
| JP2001106785A (ja) * | 1999-08-05 | 2001-04-17 | Canon Inc | 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、該レジスト組成物を用いたパターン形成方法、該パターン形成方法により製造されるデバイス及び該感光性樹脂を有するレジストを用いた露光方法 |
| FR3034881B1 (fr) * | 2015-04-09 | 2017-05-05 | Univ Claude Bernard Lyon | Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
-
1974
- 1974-12-20 US US05/534,542 patent/US3985915A/en not_active Expired - Lifetime
-
1975
- 1975-10-22 FR FR7533276A patent/FR2295466A1/fr active Granted
- 1975-11-05 JP JP50132206A patent/JPS5845693B2/ja not_active Expired
- 1975-11-11 GB GB4648975A patent/GB1476289A/en not_active Expired
- 1975-11-28 DE DE19752553519 patent/DE2553519A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2295466B1 (oth) | 1981-08-21 |
| GB1476289A (en) | 1977-06-10 |
| US3985915A (en) | 1976-10-12 |
| JPS5184640A (oth) | 1976-07-24 |
| DE2553519A1 (de) | 1976-07-01 |
| FR2295466A1 (fr) | 1976-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3535137A (en) | Method of fabricating etch resistant masks | |
| US4087569A (en) | Prebaking treatment for resist mask composition and mask making process using same | |
| US3987215A (en) | Resist mask formation process | |
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| JPS5845693B2 (ja) | ゾウケイセイホウホウ | |
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| EP0015459B1 (en) | Article comprising a negative x-ray resist containing poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate) and method using this resist | |
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| US4233394A (en) | Method of patterning a substrate | |
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| JPH0330852B2 (oth) | ||
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