JPS5845167A - Dielectric ceramic composition for high frequence - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use.

For use in high frequency areas such as microwaves and millimeter waves, dielectric porcelain is widely used in dielectric common excavators and dielectric substrates for MIC.

Conventionally, this type of dielectric porcelain is Zr01-8
nO,-Tie, based materials, Ba, Ti, O,. ,
(Ba, 5r)(Zr, Ti)O, based material, B
A(Zn, Ta)O, etc. are known, and C(Heru,
These materials have a dielectric constant (εr) of 20 in the microwave band.
~40. Q is an excellent material with a temperature coefficient (1) of oppIn/l- at the resonance frequency of 4000 to 4000, but recently the frequency range in which it is used has become even higher. Therefore, a material with an even higher Q value is required.

Therefore, it is an object of the present invention to provide a dielectric ceramic composition which has a higher 1^Q in the high frequency region than the conventional one.

That is, the gist of this invention is that the general formula (B
al-, 5rv) (Zrxzn, Ta2) 0. /, -J
Composition odor expressed as C/s-my71 "c, α02
≦V≦0.13.0.02≦X≦α13. α28=y=
CL now! , C1,59≦2≦065 (Nadashi a z+y
+g=1).

Hereinafter, this invention will be explained in detail according to examples.

High 149 (DBLCOs* ElrCO,, ZrO,,
ZnO, Ta2O.

Weigh the ingredients so as to obtain porcelain having the composition shown in Table 1, wet mix the weighed raw materials for 2 hours, and then
Calcination was performed at 200t' for 2 hours (^, a binder was further added and wet-mixed again for 2 hours, dehydrated and sized.The obtained powder was heated to 12aφx at a pressure of 2Q001i1/4.
It was molded into a disk with a size of 6 Ut and fired at 1450c for 4 hours to obtain a porcelain sample.

Regarding the obtained ceramic sample, the dielectric constant (ε), Q, and the temperature coefficient/number of resonance frequency (τ
f) was measured and the results are shown in Table 1. In Table 1*
The marks are outside the scope of this invention, and everything else is within the scope of this invention.

Table 1: Temperature coefficient (1Pf)' for resonance frequency 1 is +25'c~
+ 85'C temperature range and based on the linear equation I/S"
r: The determined value.

i=−ifg=,,J where ζ: dielectric constant (temperature change rate α=linear expansion coefficient of porcelain sample) As is clear from Table 1, the present invention has the following properties:
It exhibits a high 1^ dielectric constant and a good τf, making it especially lC.
Q Tatsu Oni C has a maximum value of 14,200.
It is possible to provide a high frequency dielectric ceramic useful for applications such as dielectric substrates.

It should be noted that samples having compositions outside the scope of the present invention (sample numbers 6 and 7) cannot be sintered and cannot be put to practical use.

patent applicant Murata Manufacturing Co., Ltd. Procedural amendment February 1982)S['' Commissioner of the Patent Office (, ″” 1.Display of the incident 1981 Patent Application No. 143296 2. Name of the invention Dielectric ceramic composition for high frequency 3. Person who makes corrections January 26, 1982 As shown in the attached sheet.

Claims (1)

[Claims] General formula (B a 1-v 8 r v ) (Z r
x Z ny T az )Ot/s −ψ−1V
, α02≦V≦0.15 for the composition expressed by 1^
゜0.02≦X≦0.15.0.28≦y≦'0.33
．． α59≦2≦0.65 (however @X+71=1)
A dielectric ceramic composition for high frequency use, characterized in that the range ζ is within the range ζ.