JPS5844643A - Manufacturing method of impregnate type cathode - Google Patents
Manufacturing method of impregnate type cathodeInfo
- Publication number
- JPS5844643A JPS5844643A JP14173781A JP14173781A JPS5844643A JP S5844643 A JPS5844643 A JP S5844643A JP 14173781 A JP14173781 A JP 14173781A JP 14173781 A JP14173781 A JP 14173781A JP S5844643 A JPS5844643 A JP S5844643A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thin plate
- impregnated
- substrate
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は含浸形隙極に係り、特にその製造方法の改良に
曲する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to impregnated porous electrodes, and is particularly directed to improvements in the method of manufacturing the same.
従来の含浸形隘億の製造方法について第1図により駈明
すると、同図(a)は基体となる多孔質タングステンの
桿状焼結体11を示すものであり、この多孔−タングス
テン焼結体は陰極完成後におけルエミツシdン効率およ
びエンツタの蒸帖の防止などの点から一般ζ二七の見か
け比重が16程度のものが使用され、次の切削工程電二
おける加工性をよくするために空孔部に銅が含浸される
。+シて切削工程で同図tb) * lc) * (d
)に示すように所定の径に外径切削、真面切削された後
、所定の厚さに突切り切削、裏面切削されて例えば外径
1.5鵡、厚さ0.4mの基体(一般題;ペレットと称
される)が形成される9次にこの基体は同図(6)の検
量工程を経て、同図(f)で水素雰囲気中において加熱
して鋼を蒸発せしめるかあるいは強酸液中に浸漬して鏑
を溶解せしめるなどして銅が除去される。The conventional manufacturing method for impregnated tungsten fibers can be explained in detail with reference to FIG. 1. FIG. After the cathode is completed, a general ζ27 material with an apparent specific gravity of about 16 is used in order to improve the emitter efficiency and prevent the formation of steam, and to improve the workability in the next cutting process. The holes are impregnated with copper. In the cutting process, the same figure tb) * lc) * (d
), the outer diameter is cut to a predetermined diameter, the face is cut to a predetermined diameter, and then the back surface is cut to a predetermined thickness. Next, this substrate undergoes the calibration process shown in (6) in the same figure, and in (f) in the same figure, it is heated in a hydrogen atmosphere to evaporate the steel or heated in a strong acid solution. Copper is removed by immersing the iron in the iron and dissolving it.
然る後同図(glで基体の裏面部にモリブデンルテニク
ム(Mo−Ru)合金を塗布して水素または不活性ガス
雰囲気中で200Ofに加熱し、孔部に溶融せしめる。Thereafter, a molybdenum ruthenium (Mo--Ru) alloy is applied to the back surface of the substrate as shown in FIG.
この工程の1的は陰極完成時a=基体の裏面よ11ツタ
が′rA発することを防止すると共に、裏面から電子が
放出することをψ止しヒータカソード間の漏洩電fIL
(Iwx )を可及的に抑制しようとすることである。One purpose of this process is to prevent the 11 ivy from emitting 'rA from the back surface of the substrate when the cathode is completed, as well as to prevent ψ from emitting electrons from the back surface, thereby reducing the leakage current fIL between the heater cathode.
(Iwx) is to be suppressed as much as possible.
そして同図(h7の工程において基体の表面側にエセツ
タ(電子放射物質)となるバリウム カルシウム アル
ミネート(一般的には4BaO: I A40s :
I CaOの配合比で用いられることが多いが、必要(
二応じて適宜変更される。) 13を乗せ水素気流中で
溶融含浸させて陰極基体14を形成する。この工程は具
体的にはBaCO5e Altos +C1CO5の混
合物を基板の表面上に乗せ、先ずBa Cos + C
a COlを分解させた彼h12o、に化臼、溶融させ
るようにして孔部に含浸させるものである。In the same figure (step h7), barium calcium aluminate (generally 4BaO: IA40s:
It is often used at the blending ratio of I CaO, but it is necessary (
2. Changes will be made as appropriate. ) 13 is placed thereon and melted and impregnated in a hydrogen stream to form a cathode substrate 14. Specifically, this process involves placing a mixture of BaCO5e Altos +C1CO5 on the surface of the substrate, and first adding BaCos + C1CO5 to the surface of the substrate.
a. COl is decomposed and then melted and impregnated into the holes.
次に同図(11の工程で陰極基体14の衣・面に付着す
る余剰のエミッタを除去するために面腑きが施され、同
図(j) 、 (k)の検査工程および表裏弁別工程を
経た後、同図(1)の第1の組立工程でTaなどからな
るド極支持筒15の7塙に電子放射面側を上側にして俗
接叫により取、η保持され、同図(m)の第2の組立工
機で陰極支持板18に取着され支持筒15を保持するた
めに設けられた外筒19の端部を切開した接続片加に支
持筒15を溶接する。陰極榊体巧を形成するために支持
筒15の内部にヒータ17が押着される。含浸形陰極と
して完成され、同図(n)の検査工程を経て電子管等の
組立てに回されるものである。Next, in the step 11 in the same figure, the surface of the cathode substrate 14 is smoothed to remove excess emitter adhering to the coating/surface, and the inspection step and front/back discrimination step shown in FIGS. After that, in the first assembly process shown in FIG. 1 (1), the electrode support tube 15 made of Ta or the like is placed on the 7th wall with the electron emitting surface facing up, and η is held. The support tube 15 is welded to the connecting piece, which is attached to the cathode support plate 18 and provided for holding the support tube 15 by cutting out the end of the outer tube 19, using the second assembly machine in step m). A heater 17 is pressed into the support tube 15 to form the Sakaki body.The cathode is completed as an impregnated cathode, and after passing through the inspection process shown in FIG. .
しかしながらかかる含浸形陰極の製造方法は各工程が煩
雑であるため、工程を合理化して省力化することが要望
されている。However, each process in the manufacturing method for such an impregnated cathode is complicated, so there is a demand for streamlining the process and saving labor.
そこで不発明は上記の要望に応えた極めて良好な含浸形
陰極の製造方法を提供することを目的とする。Therefore, an object of the present invention is to provide an extremely good method for manufacturing an impregnated cathode that meets the above-mentioned needs.
以下図面を参照して本発明の一実施例につき詳細に説明
する。An embodiment of the present invention will be described in detail below with reference to the drawings.
すなわち第2図(a)は基体となる棒状の多孔質タング
ステンの棒状焼結体21を示すものであり、この多孔質
タングステン焼結体は可及的に太くして(現状では外径
5011φ位迄の焼結棒な得ることが可能である。)形
成される。そしてこの多孔質タングステン焼結体は機椋
的な加工性を増すために空孔内に銅を含浸させた後、同
図tb)に示すようにスライシング加工されて薄板状に
切削される。In other words, FIG. 2(a) shows a rod-shaped porous tungsten sintered body 21 that serves as a base, and this porous tungsten sintered body is made as thick as possible (at present, the outer diameter is about 5011φ). It is possible to obtain a sintered rod of up to 100% of the total amount formed. After this porous tungsten sintered body is impregnated with copper into the pores to increase machinability, it is sliced into a thin plate as shown in tb) of the same figure.
この際外径切Nは省略できる。このスライシング加工は
旋盤加工によってもよいが、大門生産の場合バーv A
/チヮイヤンーと称されるスライシングマシンを用いれ
ばより工程短縮を計ることができ、あるいは他の例えば
ダイヤモンドカッター等を用いる方法によってもよい。At this time, the outer diameter cutting N can be omitted. This slicing process may be performed using a lathe process, but in the case of Daimon production, bar v A
The process can be further shortened by using a slicing machine called a slicing machine, or another method using a diamond cutter or the like may be used.
次にこの薄板nは同図telの工程で酸処理あるいは水
素処理で孔t51sI=含浸している銅を除去した後、
同図telの工程でエミッタを含浸させ薄板状の基体必
を形成する。すなわちこのエミッタ含浸工程はMU記薄
板ηを水素炉に入れ、この薄板の上にBaC0a *
All Os + CaCO5の混合物るを乗せて先ず
BaCO5およびCaCO5を熱分解せしめBaOCa
Oに変化させた後、さらに炉を昇温しBa0A403C
aOの固溶体(バリウムカルシウムアルミネート)にし
て耐融させ多孔質タングステン薄板の空孔部に含浸させ
るようにして行なわれる。然る後、同図(f)の工程で
薄板状の基体冴の表面に残存する余剰エミッタをタング
ステンウール(タングステンコイル屑をまるめたもの)
等で研磨して除去する。瀝おエミッタ含量工程に先立っ
て、最終的(二得る含浸形陰極が従来の如く直接陰極支
持筒の端部に取着するのであれば、同図(dlに示すよ
う題二基体の電子放射面となる反対側のW遡ニモリブデ
ンルテニウム鎌を塗布して不活性ガスまたは真窒中で焼
付ける工程を行なうようにすればよい。Next, this thin plate n is subjected to acid treatment or hydrogen treatment to remove the copper impregnated in the hole t51sI in the step tel in the same figure.
In the process shown in FIG. 1, the emitter is impregnated to form a thin plate-like substrate. That is, in this emitter impregnation step, the MU thin plate η is placed in a hydrogen furnace, and BaC0a* is deposited on top of this thin plate.
A mixture of All Os + CaCO5 was added to first thermally decompose BaCO5 and CaCO5 to form BaOCa.
After changing to O, the temperature of the furnace is further raised to change Ba0A403C.
This is carried out by making a solid solution of aO (barium calcium aluminate) resistant to melting and impregnating it into the pores of a porous thin tungsten plate. After that, in the process shown in the same figure (f), the excess emitter remaining on the surface of the thin plate-like substrate is removed with tungsten wool (rounded tungsten coil waste).
Remove by polishing. Prior to the emitter content step, if the final impregnated cathode is attached directly to the end of the cathode support tube as in the conventional case, the electron emitting surface of the substrate is What is necessary is to perform a step of coating the opposite side of the W retouched molybdenum ruthenium sickle and baking it in an inert gas or pure nitrogen.
次にこのようにしてエミッタが含浸された多孔質タング
ステン薄板即ち陰極基体集合体列な同図(g)の工程で
レーザ光線加工により、一つ一つが陰極基体5として所
要の外径寸法が得られるように抜き取り加工される。す
なわちかかる陰極基体の加工工程によれば7秋の薄板か
ら多数(例えば外径寸法30絽φの薄板、の場合、外径
1.5鰭φの基体ならば100個とることができる)の
同一性質を有する基体が得られ品質管理上の利点がある
と共に、従来のように一つ一つの基体に形成した後にエ
ミッタを含浸させるような方法に比して、中間工程の手
作束中材料の出し入れの手間を大幅に短縮することが可
能となる。そして上記のレーザー加工は具体的には大気
中、或は窒素、アルコン、水素等の含浸型陰極に対し悪
書とならない気流中で行われ被加工部は蒸発させて行う
がこの際被蒸発物のスプラッシュはレーザ光線のノ(ル
ス幅及び繰返し周波数でその浅漬を認めない程度までに
除去が可能でおる。Next, the porous tungsten thin plates impregnated with emitters, that is, the array of cathode substrate aggregates, are then processed with a laser beam in the process shown in FIG. It is extracted and processed to make it look like this. In other words, according to the manufacturing process of such a cathode substrate, a large number of identical pieces (for example, in the case of a thin plate with an outer diameter of 30 mm and a substrate with an outer diameter of 1.5 fins) can be obtained from a thin plate of 7 pieces. In addition to being advantageous in terms of quality control by providing a substrate with specific properties, it is also possible to reduce the amount of material in the handmade bundle in the intermediate process, compared to the conventional method of forming each substrate one by one and then impregnating the emitter. It is possible to significantly reduce the time and effort required for loading and unloading. The above laser processing is specifically carried out in the atmosphere or in an airflow that does not harm the cathode impregnated with nitrogen, alkone, hydrogen, etc., and the part to be processed is evaporated. Splash can be removed to the extent that shallow splashing is not recognized by changing the pulse width and repetition frequency of the laser beam.
従来例ではこの加工を放電加工で行っていたが含9.型
陰極の多孔質タングステン体の厚さは陰極の寿命等から
割り出されその厚さは0.41111を最底としている
。従って0.4!IIの多孔質タングステン薄板を放電
加工で抜くとなると最底1.0時間を要する。しかも多
数個取りとすれば一時にか\る放′セ加工の電力は同じ
となるので個数X時間の核は必ずしも多数個取りは浚利
とは云えず加工速度には難点があった。In the conventional example, this machining was performed by electric discharge machining, but it includes 9. The thickness of the porous tungsten body of the type cathode is determined from the life of the cathode, etc., and the thickness is set at the bottom at 0.41111. Therefore 0.4! It takes at least 1.0 hours to punch out the porous tungsten thin plate II by electrical discharge machining. Furthermore, if a large number of pieces are to be removed, the power required for free machining at one time is the same, so the number of pieces x time cannot necessarily be said to be dredging, and there is a problem with the machining speed.
本案はこの加工なレーザによるものであり、ノくルス幅
soo na + m返し15 KCのレーザで切削部
を回転毎秒15[glさせながら行うことでQ、4 m
1mの多孔質タングステン薄板を約2分間で切削加工す
ることができ従来例(二比しく至)倍の加工速度が得ら
れる。The present project is based on this laser processing, and the cutting part is rotated at 15 [gl] per second using a laser with a cutting width of soo na + m and a return of 15 KC.
A 1 m thick porous tungsten thin plate can be cut in about 2 minutes, which is twice as fast as the conventional method.
不工程に於て(第2図に於て)(a)〜(f)工程は多
数、 個取り (約100ケ)又は無人化(スライシン
グ)であり加工費についておまり問題はないが放電加工
は1個(二対する所要時間、及び設備費とこれζ二伴う
償却費、運転費、で事実上採算割れとなる。In the non-processing process (in Figure 2), there are many processes (a) to (f), which involve individual cutting (approximately 100 pieces) or unmanned processing (slicing), and there is no problem with machining costs, but electrical discharge machining In fact, it becomes unprofitable due to the time required for 1 piece (2), equipment cost, depreciation cost, and operating cost associated with this ζ2.
この点レーザ装置の設備費は放電加工の2倍であるが加
工速度が間借となり充分の採算性を有する。In this respect, although the equipment cost of the laser device is twice that of electric discharge machining, the machining speed is reduced, making it sufficiently profitable.
レーザ光による多孔質タングステン薄板の切断面は切断
表面にわずか(切断した単一粒の表面のみ)の溶融状態
が見られるのみで(この点放電加工も同様)切断面に対
して良好であり含浸されたバリクム、カルシウム、アル
ミネートも切断表面層で蒸発散失するが内部的6二は異
状はなく、充分エンツタとしての機能を有する。(この
場合も放電加工と同程度)
レーザ加工は大気中の加工で殆んど差支えないなぜなら
ば極めて短かいパルス幅を繰返すことにより被加工物体
(多孔質タングステンにアルミネートな含浸させたもの
)の全体の温度を上昇させることは鬼<、局部的瞬間的
加熱で蒸発させるために周辺は冷却されて温度が酸化領
域まで達しないためである。更に窒累、アルゴン、水素
等、不活性又は還元性のガス中では全く安全である。When cutting a porous tungsten thin plate using a laser beam, only a slight molten state (only on the surface of a single cut grain) can be seen on the cut surface (the same applies to this point discharge machining), and the cut surface is in good condition, indicating impregnation. Varicum, calcium, and aluminate also evaporate and evaporate in the cut surface layer, but there is no abnormality inside the cut surface, and it functions well as an entuter. (Also in this case, the same level as electric discharge machining) Laser machining has almost no problem in machining in the atmosphere, because the workpiece (porous tungsten impregnated with aluminate) is processed by repeating extremely short pulse widths. This is because the temperature of the surrounding area is cooled and the temperature does not reach the oxidation region because the evaporation is caused by localized instantaneous heating. Furthermore, it is completely safe in inert or reducing gases such as nitrogen, argon, and hydrogen.
この点放電加工の如く石油を使用し且つ加工時の遊離炭
素になやまされることは全くない。又、遊離炭素の除去
に水素処理を行うような後処理の必蒙もない。Unlike point discharge machining, petroleum is used and there is no problem with free carbon during machining. Further, there is no necessity for post-treatment such as hydrogen treatment to remove free carbon.
又、電子放出面については全く無接触であり加工歪を受
けないので安全である。Furthermore, the electron emitting surface is completely non-contact and is not subjected to processing distortion, so it is safe.
然る後、同図(h)の上段に示すようMoまたはTaな
とから形成されるキャップ%を介在させて陰極支持尚の
端部に取着する。このキャップIを使用すれば第2図t
dlのモリブデンルテニウム鑞付工程が省略できると共
(二表裏弁別工程が省略できるため組立工程の愼緘化が
可能となる。あるいは同図ldl工程を経た陰極基体を
同図(h)の下段に示すように基体の工きツタ含浸面を
表面として陰極支持筒の端部に直接取着する如くして第
1の組立工程を行なう。Thereafter, as shown in the upper part of the figure (h), a cap made of Mo or Ta is interposed and attached to the end of the cathode support. If you use this cap I, see Figure 2.
The molybdenum ruthenium brazing process of DL can be omitted (the process of distinguishing between the two front and back sides can be omitted, making it possible to simplify the assembly process. Alternatively, the cathode substrate that has gone through the ldl process in the same figure can be placed in the lower row of the same figure (h). As shown, the first assembly step is carried out by directly attaching the substrate to the end of the cathode support cylinder with the ivy-impregnated surface of the substrate as the surface.
以Fの工程は繭記した従来の第1図と略同様な工程を経
て含浸形kmが完成される。The subsequent steps F are substantially the same as those shown in FIG. 1, and the impregnated mold km is completed.
従って以上詳述したような本発明によれば、特に陰極基
体の形成工程を、能率的に合理化して中間工程の手間を
著しく省くことができ従来に比して10分の1の労力と
することができる極めて良好な含浸形隘極の製造方法を
提供し得る。Therefore, according to the present invention as described in detail above, the process of forming the cathode substrate in particular can be efficiently streamlined and the labor of intermediate processes can be significantly reduced, reducing the labor to one-tenth of the conventional process. It is possible to provide an extremely good method for manufacturing an impregnated pole.
なお本発明は要旨を変更しない範囲で釉々の変形を実施
し得ることはビうまでもない。It goes without saying that the glaze of the present invention can be modified without changing the gist of the invention.
第1図は従来の含浸形陰極の製造方法を示す工程図、第
2図は本発明に係る含浸形陰極の製造方法の一実施例を
示す要部の工程図である。
冴・・・・・・薄板状基体
5・・・・・・陰極基体
が・・・・・・キャップ
n・・・・・・陰極支持筒FIG. 1 is a process diagram showing a conventional method for manufacturing an impregnated cathode, and FIG. 2 is a process diagram showing essential parts of an embodiment of the method for manufacturing an impregnated cathode according to the present invention. Sae... Thin plate-like substrate 5... Cathode substrate... Cap n... Cathode support cylinder
Claims (1)
グステン焼績°体を形成する第1の工程と、この第1の
工程により形成された薄板状の多孔質タングステン焼結
体に工きツタを含浸させるに2の工程と、この第2の工
程でエンツタが含浸された薄板状の陰極基体集合体から
レーザ加工で表面から所定の形状加工し多数の陰極基体
を形成する第3の工程とを具備することを特徴とする含
浸形陰極の製造方法。A first step of forming a thin plate-shaped porous tungsten sintered body from a rod-shaped porous tungsten sintered body, and a step of engraving ivy on the thin plate-shaped porous tungsten sintered body formed by this first step. The second step is to impregnate the cathode substrate, and the third step is to process the thin plate-shaped cathode substrate assembly impregnated with entuta into a predetermined shape from the surface by laser processing to form a large number of cathode substrates. A method for manufacturing an impregnated cathode, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14173781A JPS5844643A (en) | 1981-09-10 | 1981-09-10 | Manufacturing method of impregnate type cathode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14173781A JPS5844643A (en) | 1981-09-10 | 1981-09-10 | Manufacturing method of impregnate type cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5844643A true JPS5844643A (en) | 1983-03-15 |
Family
ID=15299028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14173781A Pending JPS5844643A (en) | 1981-09-10 | 1981-09-10 | Manufacturing method of impregnate type cathode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5844643A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61142626A (en) * | 1984-12-14 | 1986-06-30 | Toshiba Corp | Impregnated cathode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436827A (en) * | 1977-08-25 | 1979-03-17 | Rahdener Maschf August | Method of covering jacket around book and its device |
-
1981
- 1981-09-10 JP JP14173781A patent/JPS5844643A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436827A (en) * | 1977-08-25 | 1979-03-17 | Rahdener Maschf August | Method of covering jacket around book and its device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61142626A (en) * | 1984-12-14 | 1986-06-30 | Toshiba Corp | Impregnated cathode |
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