JPS5843631A - Current injection type logical gate circuit using josephson effect - Google Patents

Abstract

PURPOSE:To make a logical gate circuit of the product of a wide operation margin small-sized, by connecting 2 input lines to a resistance and a Josephson junction, connecting an output line to the Josephson junction and the resistance, and connecting each resistance in common, CONSTITUTION:Input lines 38, 39 for injecting input current Ia, Ib are connected to Josephson JS junctions 30, 32 whose one terminal is grounded, respectively, and resistances 33, 35. An output line 36 terminated by a resistance 37 is connected to a JS junction 31 whose one terminal has been grounded 40, and a resistance 34, and the other terminal of the resistances 33-35 are connected in common. A critical current values of the JS 30-32 and resistance values of the resistances 33-35 are denoted as I01-I03 and r1-r3, respectively, and set to I01=I03=I02/2=I0, and r1=r3=r2/2, respectively. When only one current in the currents Ia, Ib flows, the logical gate is not transferred to a voltage state unless a current exceeding 3I0 flows. When 2 input currents exceeding a current Ia= Ib=I0 flow, the logical gate circuit is transferred to the voltage state, and since the inductance is not used, an AND gate having a wide operation margin, which has been made small-sized is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a logic gate circuit using the Di1-Cefson effect, and more specifically to a current injection logic dart circuit that performs product logic.

Logic gate circuits using the G77non effect are described, for example, in the literature Applied Physics Letters (Appli@d
Physies Iatt@rm) Vol, 3
3. N18. pp. 7111-70, it is widely known in the field of technology. In their logic gate circuit, several values of Sefson metallization and
The interference fine logic gate circuit, which is composed of a loop path made of inductance that connects these electrically, is created by directly injecting current into the interference logic decay gate circuit.
Or, it is switched by electromagnetic coupling with the input current in the control line of the interference layer logic gate circuit.The first theory is a conventional example of a logic gate circuit that produces products by current injection.
The -) figure is a circuit diagram, and the (a) figure is the control characteristic of the logic gate circuit, p, and the horizontal and vertical axes are the two input currents Ia%Ibt injected into the logic gate circuit, respectively. show. -) In the figure, 10.11 tj are respectively the G-Sefson junctions where the critical value of the fault current is Io1%Ion, 12.13 are the inductance values, respectively, the inductance containing %L2, and 14S Is are the input currents Ia, respectively. Input current path where %Ib is injected, 1
6 company output button 117 is load resistance, 18 is *m.

The relationship between the above inductance value L1, Ias G-Sefson critical current value Io1, and Ion is LIIIoim l4Io snow...
・・・・・・・・・・・・・・・-〇）I6 (Ll
+Lx)-φ.・・・・－１・・・・・・・・・・・・
・・・・・・・・・・・・(2) Choose as many people as possible.

In the above formula, φ. is a natural constant called magnetic flux quantum, which is 2.0
0(b) m with a gD value of 7 pH-m & m1ll
In the 4D m control mode, when the λ power lines 111a and lb are in the shaded area in the diagram, they are in the G-Sefnon junction to, ii trip zero voltage state, and therefore the output-path 1
No output current flows through 6, and the logic gate circuit has a logic ovMIIK. In the figure, the shaded area is 1, where the diagonal voltage is 10% and 11 is 1! The output current flows through the output path 16, and the circuit is in the logic 3110 state iIc. In order for the logic gate circuit to transition to the voltage state when only the input voltage @1aSt and Ib is flowing, the input voltage 11 is required.
16% Stronger value O input current Ia than IbO value
In the state where %Ib is starved to 4, it is necessary for the starved logic dart circuit to transition to the voltage state.
If the value of Ib) is small 1, the operating margin is large, and the logic gate circuit is 05m4 large, it is optimal.
In this paper, in the waterfall gate circuit, the critical current value O ratio of the two circuits, 10 and 11, Ica/I
When on is 30 and 1KIa-IbO state 1, the logic game)
It is necessary for lll to transition to the voltage state! The minimum input current value Ia & To is (Io1+IM)/3
M1ll and 1 glue provide the most optimal & controlled mating properties. Therefore, input voltage @Ia, ll5O value is 2(I・1+Ios)/
I II If you design directly, the input current summer a%xb and %K
tIL is in a state of failure) -! 0'eI [wasa trivial 5, it can be seen that the logic of product is performed.

As stated above, this logic gate circuit works!゛°
'1 The advantage of the circuit is that it has a large gain of 1 (1 t) and can operate at high speed. At the same time, it also has the following disadvantages: )Formula (?*), it is not possible to reduce the current level Io and the inductance value L1s at the same time,
l! The key is to reduce the chip area in a single-direction OR structure. tf# - Other shortcomings, scissors, logic gate circuits include both inmetance and capacity, high-speed operation. Therefore, it has a resonance that must be damped. In addition, when such a ta path transitions to the superconducting state 111, it traps the floating 011 flux, causing a malfunction due to the ζO trapped magnetic flux.

The purpose of this invention is to eliminate the aforementioned drawbacks while maintaining the same wide operating margin and high gain as the conventional limbal gate circuit. According to the present invention, the first input line and one end of the jllD resistor are connected to the first jisocefnon junction, one of which is grounded, and one end of the jllD resistor is grounded.
I! L, the 20th dicarbonate junction with one side grounded, the output - and the irises! ! The input of %jI2 is connected to one end of the O resistor, and one end is grounded.
and one end of the third resistor, and each of the first, second sP and 3011th resistors is crossed at a single point El! I
! G-Sefno 341 meeting j 11% featuring Sareko
/% 9 current injection Taki logic gate-path is obtained・The following 1 present invention is used for aiii tube IA-(@clarified 0th 8i
g + a book 11i@t) - Example 1 Jijoryu Aso/-
11JIk*M-9 Current injection logic circuit 1 This is a large diagram to explain the circuit diagram.
She is 11 years old. Figure #csI-30%31, a2
#i Each has the critical current value Io1s Is or IoatJiso Shichifun/II Association, 33, $4 *
35 are the output rods, which are connected to the load resistor 37 having the resistance value r1, electric current, i, and the resistance value %86, respectively.
8, JIIJ is the input signal Is s 1bO#
In this embodiment, the input line 40 represents the ground.
s, resistance value 1, and resistance 5rJl are set so as to form the following relational expression.Ion #I@/! ! sl Io・”=
=・−・” I)r1 tate r1−n/!!・−・−１・・
- One axis - (4) Assume that only one of the 12 input currents jlIa and Ib, for example, only an input current of 1 m, is injected into the logic gate circuit, and IaOIl is (3
) is also largely selected, the dielectric junction 5oFi voltage state 1liI#c transitions, and after the injected input voltage FIL Iaa flows through the resistor 33, h according to the relationship of equation (4)・Ia passes through the resistor 34 and is injected into the junction 31#C%i through the resistor 35 and into the junction 32. Here, Ia ■≦1o ・・・・・・・・・・−・・・・・・−
・−・・・・・・・・・−・−・ (5) Ia > I
o −・・−・・・・・−・・−・−・−・・
. . . If the relational expression (6) is satisfied, the above-mentioned connection company 32 is in a zero voltage state IIK, and no output current flows through the output line 36.

Next, input current that satisfies the following relational expression! When b is injected into the wrinkled logic gate circuit, Ia/3 + Ib > Io =−−==−−=
(7) Ia + Ik > 2Io ==-”=
”=== (8) According to equation (7), the voltage level mK transition occurs at the junction junction 31, and the input voltages fiIa and Ib are injected into the junction 31. Therefore, the di-icefnon junction 31 is also in the voltage state 111111L, and the input current Iawlb passes through the output -36 and flows into the load resistor 37.If the input current 1b is injected into the logic gate circuit before Ia] 1 If Ia and Ib are swapped in the above e@Ming, a similar theory will come true.
This shows the control characteristics of the isthmus logic gate circuit obtained by exchanging a and Ibl (FlllO formula) ◇ As seen from this figure, when only one of the If an input current of magnitude 3I (1 or more) does not flow, it will not transition to the non-continuous circuit voltage state.On the other hand, if inputs tmIa-Ib of equal magnitude are flowing, an input of I #iIa -Ib -Is or more When a current flows, the logic gate 1 undergoes a voltage-like lIK transition ◎l!U!The logic gate circuit of the present invention has a wide operational margin, similar to the current injection layer logic gate circuit shown in No. 111 as a conventional example. It has a high gain as a single-channel gate, and is capable of high-blocking operation.Furthermore, in the injection logic gate circuit of this embodiment, the critical current value and resistance value are -) , ←) It is sufficient if the relative relational expression shown in 2 is satisfied.
Therefore, it is possible to make the Kuma*Oa path smaller as permitted by phosphorography technology. In a gate circuit using a superconducting loop circuit, there is no need to take measures to suppress resonance on the circuit, since no inductance is used. Therefore, even if a stray O magnetic field tube is trapped on the ground plane and becomes stuck, it will not affect the operation by 4%. It can also be used as

FIG. 3 shows a configuration in which the present embodiment can be used as an amplifier. In the embodiment of FIG. 2, a constant current Igt is applied to the input 939 through which the input voltage *xb flows. Considering the operating margin, input current value Ig @ Ia m
The critical current value of the logic gate path when O is 31・Om
Set K. Therefore, the operating point at that time can be expressed as 41 in the control characteristic of 112 m. The minimum human effort needed to transition this logic gate 1 to the voltage state in this O state is Oj% I.・Ignore the leakage current of the voltage state ll#IC case and connection. Then, the output current of this logic gate circuit is 3Io
O,75+ 0.25Io -2,,5Io becomes 1, and a current gain of 10 is obtained.As shown in Fig. A], as an amplifier e
lms, it can be seen that the original '@O current injection logic gate circuit is more stable. In actual operation, considering the operating margin, etc., the magnitude of the input current lm is selected to be a large value for OMI and JI. Therefore, the operating point of this logic gate circuit with a voltage level of 11KTh is 3wJ42K is set at a point corresponding to K. As stated above, the 9 current injection logic gate 1 circuit using the G-Sefson effect of the present invention is suitable for the OSS book in constructing the D-Cefson integrated circuit tube. The product 6 logic gate circuit, which is a gate-path, has a wide range of operation that is comparable to the conventional gsefnon interference logic gate circuit! - It can be realized with a logic gate circuit having a structure that does not use an 11° inductance while maintaining high gain characteristics. For this reason, the logic gate circuit described above is different from conventional interference-based logic gate circuits in that it can be made smaller in size, and it also has the advantage that it is not possible to make circuit improvements to avoid resonance phenomena. gate-road e

[Brief explanation of the drawing]

No. iml is a rounded diagram explaining a conventional example of a nine-current injection wrinkled logic gate circuit using the G-Cefnon effect, (a) is a circuit diagram, and (b) is a diagram showing the control characteristics of the wrinkled logic gate circuit. -), 10%ll is the di-cefnon effect, 1
2.13 is the inductance, 14% 15 is the input current path 1.6° 11.7o-:-0.1jF, *m?
a,. , the same ml (b), 20 indicates the operating point at which the scissor gate (c) circuit performs the product logic operation. To illustrate an example, in Oll (
B) is the circuit diagram, and C) is the control characteristic of the armpit logic dart circuit. 30.31.32t in Okall (transformation)! The error
7 non-wk building, 33% 34s 315 a resistance, 36c output line, 17#i load resistance, 38.39 is input line, 40tj grounding 〇oka 1iI (turn) 4
1.42 When one logic gate is used as a current amplifier, the O operating point is shown. GSSA is an embodiment of the present invention shown in FIG. 3. It is a circuit diagram showing an O configuration when a wire injection logic gate circuit is used as a current increase III. 1PJ1 figure ((2) lΔ tb) −,)bIo++Iog Akira 2 figure (Q) Cb)

Claims (1)

[Claims] $11 for the 1st Ji Se 7 Son meeting where one was placed II
Connect the input bell to the terminal of the resistor 01 of ll110, one end of which is grounded, and the non-junction of jI20 of ■ Connect the second input - and one end of the 30th resistor to the safe junction, and make sure that the other ends of the 1st, 2nd, and @SO resistors are #C connected to each other at one point. A current injection logic gate circuit using the characteristic Jiso-Nanfuson effect.